DE3482847D1 - Halbleiterspeichervorrichtung mit einem schwebenden gate. - Google Patents
Halbleiterspeichervorrichtung mit einem schwebenden gate.Info
- Publication number
- DE3482847D1 DE3482847D1 DE8484104278T DE3482847T DE3482847D1 DE 3482847 D1 DE3482847 D1 DE 3482847D1 DE 8484104278 T DE8484104278 T DE 8484104278T DE 3482847 T DE3482847 T DE 3482847T DE 3482847 D1 DE3482847 D1 DE 3482847D1
- Authority
- DE
- Germany
- Prior art keywords
- storage device
- floating gate
- semiconductor storage
- semiconductor
- floating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58068080A JPS59194474A (ja) | 1983-04-18 | 1983-04-18 | 半導体記憶装置 |
JP58138855A JPS6031267A (ja) | 1983-07-29 | 1983-07-29 | 半導体記憶装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3482847D1 true DE3482847D1 (de) | 1990-09-06 |
Family
ID=26409320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484104278T Expired - Lifetime DE3482847D1 (de) | 1983-04-18 | 1984-04-16 | Halbleiterspeichervorrichtung mit einem schwebenden gate. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5084745A (de) |
EP (1) | EP0123249B1 (de) |
DE (1) | DE3482847D1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0204498A3 (de) * | 1985-05-29 | 1988-09-21 | Advanced Micro Devices, Inc. | EEPROM-Zelle und Verfahren zur HerstellUng |
US4947221A (en) * | 1985-11-29 | 1990-08-07 | General Electric Company | Memory cell for a dense EPROM |
JPH088316B2 (ja) * | 1990-01-31 | 1996-01-29 | 株式会社東芝 | 紫外線消去型不揮発性半導体メモリ装置 |
US5317179A (en) * | 1991-09-23 | 1994-05-31 | Integrated Silicon Solution, Inc. | Non-volatile semiconductor memory cell |
DE19626089C2 (de) * | 1996-06-28 | 2002-01-31 | Siemens Ag | Speicherzelle und Verfahren zu ihrer Herstellung |
KR100205309B1 (ko) | 1996-07-23 | 1999-07-01 | 구본준 | 비휘발성 메모리셀 및 이 비휘발성 메모리셀을 프로그래밍하는 방법 |
US5761120A (en) * | 1996-08-27 | 1998-06-02 | Peng; Jack Zezhong | Floating gate FPGA cell with select device on drain |
TW327701B (en) * | 1997-07-21 | 1998-03-01 | United Semiconductor Corp | The flash memory cell |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3919711A (en) * | 1973-02-26 | 1975-11-11 | Intel Corp | Erasable floating gate device |
US4004159A (en) * | 1973-05-18 | 1977-01-18 | Sanyo Electric Co., Ltd. | Electrically reprogrammable nonvolatile floating gate semi-conductor memory device and method of operation |
US4087795A (en) * | 1974-09-20 | 1978-05-02 | Siemens Aktiengesellschaft | Memory field effect storage device |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
JPS5440043A (en) * | 1977-09-05 | 1979-03-28 | Toshiba Corp | Semiconductor memory |
DE2743422A1 (de) * | 1977-09-27 | 1979-03-29 | Siemens Ag | Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik |
JPS6046554B2 (ja) * | 1978-12-14 | 1985-10-16 | 株式会社東芝 | 半導体記憶素子及び記憶回路 |
US4314265A (en) * | 1979-01-24 | 1982-02-02 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory devices with four layer electrodes |
JPS55153375A (en) * | 1979-05-18 | 1980-11-29 | Nec Corp | Non-volatile semiconductor memory device |
US4297719A (en) * | 1979-08-10 | 1981-10-27 | Rca Corporation | Electrically programmable control gate injected floating gate solid state memory transistor and method of making same |
US4399523A (en) * | 1979-08-24 | 1983-08-16 | Centre Electronique Horloger Sa | Non-volatile, electrically erasable and reprogrammable memory element |
IT1209227B (it) * | 1980-06-04 | 1989-07-16 | Sgs Microelettronica Spa | Cella di memoria non volatile a 'gate' flottante elettricamente alterabile. |
US4404577A (en) * | 1980-06-30 | 1983-09-13 | International Business Machines Corp. | Electrically alterable read only memory cell |
JPS5728364A (en) * | 1980-07-28 | 1982-02-16 | Fujitsu Ltd | Semiconductor memory device |
JPS5780779A (en) * | 1980-11-07 | 1982-05-20 | Fujitsu Ltd | Semiconductor non-volatile memory |
JPS57157573A (en) * | 1981-03-25 | 1982-09-29 | Fujitsu Ltd | Semiconductor non-volatile memory cell |
JPS5812367A (ja) * | 1981-07-16 | 1983-01-24 | Matsushita Electronics Corp | 半導体記憶装置 |
JPS5839067A (ja) * | 1981-09-01 | 1983-03-07 | Seiko Instr & Electronics Ltd | 不揮発性半導体メモリ |
JPS5864068A (ja) * | 1981-10-14 | 1983-04-16 | Agency Of Ind Science & Technol | 不揮発性半導体メモリの書き込み方法 |
JPS58121678A (ja) * | 1982-01-12 | 1983-07-20 | Mitsubishi Electric Corp | 半導体不揮発性記憶装置 |
US4577215A (en) * | 1983-02-18 | 1986-03-18 | Rca Corporation | Dual word line, electrically alterable, nonvolatile floating gate memory device |
WO1983003167A1 (en) * | 1982-03-09 | 1983-09-15 | Rca Corp | An electrically alterable, nonvolatile floating gate memory device |
JPS5961062A (ja) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | 半導体記憶装置 |
-
1984
- 1984-04-16 DE DE8484104278T patent/DE3482847D1/de not_active Expired - Lifetime
- 1984-04-16 EP EP84104278A patent/EP0123249B1/de not_active Expired
-
1990
- 1990-04-27 US US07/517,543 patent/US5084745A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0123249A2 (de) | 1984-10-31 |
EP0123249B1 (de) | 1990-08-01 |
US5084745A (en) | 1992-01-28 |
EP0123249A3 (en) | 1986-07-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |