DE3485822D1 - Halbleiterspeichervorrichtung mit schwebender torelektrode. - Google Patents

Halbleiterspeichervorrichtung mit schwebender torelektrode.

Info

Publication number
DE3485822D1
DE3485822D1 DE8484101916T DE3485822T DE3485822D1 DE 3485822 D1 DE3485822 D1 DE 3485822D1 DE 8484101916 T DE8484101916 T DE 8484101916T DE 3485822 T DE3485822 T DE 3485822T DE 3485822 D1 DE3485822 D1 DE 3485822D1
Authority
DE
Germany
Prior art keywords
storage device
gate electrode
floating gate
semiconductor storage
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8484101916T
Other languages
English (en)
Other versions
DE3485822T2 (de
Inventor
Junichi Miyamoto
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3485822D1 publication Critical patent/DE3485822D1/de
Application granted granted Critical
Publication of DE3485822T2 publication Critical patent/DE3485822T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
DE8484101916T 1983-02-25 1984-02-23 Halbleiterspeichervorrichtung mit schwebender torelektrode. Expired - Lifetime DE3485822T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58030355A JPS59155968A (ja) 1983-02-25 1983-02-25 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3485822D1 true DE3485822D1 (de) 1992-08-27
DE3485822T2 DE3485822T2 (de) 1993-01-21

Family

ID=12301545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484101916T Expired - Lifetime DE3485822T2 (de) 1983-02-25 1984-02-23 Halbleiterspeichervorrichtung mit schwebender torelektrode.

Country Status (4)

Country Link
US (1) US4642673A (de)
EP (1) EP0120303B1 (de)
JP (1) JPS59155968A (de)
DE (1) DE3485822T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1198109B (it) * 1986-11-18 1988-12-21 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel
IT1199828B (it) * 1986-12-22 1989-01-05 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit
US5324677A (en) * 1988-06-15 1994-06-28 Seiko Instruments Inc. Method of making memory cell and a peripheral circuit
JPH02125470A (ja) * 1988-06-15 1990-05-14 Seiko Instr Inc 半導体不揮発性メモリ
US5089433A (en) * 1988-08-08 1992-02-18 National Semiconductor Corporation Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
US5153684A (en) * 1988-10-19 1992-10-06 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with offset transistor
JP2933090B2 (ja) * 1990-04-25 1999-08-09 富士通株式会社 不揮発性半導体記憶装置
JP3083547B2 (ja) 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
US5225700A (en) * 1991-06-28 1993-07-06 Texas Instruments Incorporated Circuit and method for forming a non-volatile memory cell
US5301150A (en) * 1992-06-22 1994-04-05 Intel Corporation Flash erasable single poly EPROM device
JP3333325B2 (ja) * 1993-08-26 2002-10-15 株式会社東芝 半導体装置、半導体装置のシミュレーション方法、及び半導体装置のシミュレータ
JP2663863B2 (ja) * 1994-04-19 1997-10-15 日本電気株式会社 不揮発性半導体記憶装置
JP3183326B2 (ja) * 1996-07-17 2001-07-09 日本電気株式会社 読出専用半導体記憶装置
DE69624107T2 (de) * 1996-07-18 2003-06-05 St Microelectronics Srl Flash-EEPROM-Zelle mit einziger Polysiliziumschicht und Verfahren zur Herstellung
US5753954A (en) * 1996-07-19 1998-05-19 National Semiconductor Corporation Single-poly neuron MOS transistor
JPH1187664A (ja) 1997-04-28 1999-03-30 Nippon Steel Corp 半導体装置及びその製造方法
US7602007B2 (en) 1997-04-28 2009-10-13 Yoshihiro Kumazaki Semiconductor device having controllable transistor threshold voltage
JP4659662B2 (ja) * 1997-04-28 2011-03-30 ペグレ・セミコンダクターズ・リミテッド・ライアビリティ・カンパニー 半導体装置及びその製造方法
TW327701B (en) * 1997-07-21 1998-03-01 United Semiconductor Corp The flash memory cell
JP2000311957A (ja) * 1999-04-27 2000-11-07 Seiko Instruments Inc 半導体装置
JP2011199124A (ja) * 2010-03-23 2011-10-06 Renesas Electronics Corp 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919711A (en) * 1973-02-26 1975-11-11 Intel Corp Erasable floating gate device
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
US4037242A (en) * 1975-12-29 1977-07-19 Texas Instruments Incorporated Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device
CH631287A5 (fr) * 1979-03-14 1982-07-30 Centre Electron Horloger Element de memoire non-volatile, electriquement reprogrammable.
DE2916884C3 (de) * 1979-04-26 1981-12-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Programmierbare Halbleiterspeicherzelle
US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
DE3029539A1 (de) * 1980-08-04 1982-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle
DE3037744A1 (de) * 1980-10-06 1982-05-19 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen einer monolithisch integrierten zwei-transistor-speicherzelle in mos-technik
JPS6034198B2 (ja) * 1980-11-26 1985-08-07 富士通株式会社 不揮発性メモリ
US4379343A (en) * 1980-11-28 1983-04-05 Hughes Aircraft Company Electrically erasable programmable read-only memory cell having a shared diffusion

Also Published As

Publication number Publication date
JPS59155968A (ja) 1984-09-05
EP0120303A2 (de) 1984-10-03
DE3485822T2 (de) 1993-01-21
US4642673A (en) 1987-02-10
EP0120303B1 (de) 1992-07-22
JPH0557745B2 (de) 1993-08-24
EP0120303A3 (en) 1986-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)