IT1199828B - Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit - Google Patents

Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit

Info

Publication number
IT1199828B
IT1199828B IT22800/86A IT2280086A IT1199828B IT 1199828 B IT1199828 B IT 1199828B IT 22800/86 A IT22800/86 A IT 22800/86A IT 2280086 A IT2280086 A IT 2280086A IT 1199828 B IT1199828 B IT 1199828B
Authority
IT
Italy
Prior art keywords
bit
polysilic
cancellable
writable
memory cell
Prior art date
Application number
IT22800/86A
Other languages
English (en)
Other versions
IT8622800A0 (it
Inventor
Giuseppe Cappelletti Paolo
Corda Giuseppe
Riva Carlo
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT22800/86A priority Critical patent/IT1199828B/it
Publication of IT8622800A0 publication Critical patent/IT8622800A0/it
Priority to EP87202392A priority patent/EP0272732B1/en
Priority to DE8787202392T priority patent/DE3780784T2/de
Priority to JP62317644A priority patent/JPS63166274A/ja
Priority to US07/136,652 priority patent/US4935790A/en
Application granted granted Critical
Publication of IT1199828B publication Critical patent/IT1199828B/it
Priority to US08/376,300 priority patent/USRE37308E1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
IT22800/86A 1986-12-22 1986-12-22 Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit IT1199828B (it)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT22800/86A IT1199828B (it) 1986-12-22 1986-12-22 Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit
EP87202392A EP0272732B1 (en) 1986-12-22 1987-12-02 Eeprom memory cell with a single level of polysilicon writable and cancellable bit by bit
DE8787202392T DE3780784T2 (de) 1986-12-22 1987-12-02 Eeprom-speicherzelle mit einer einzigen polysiliziumschicht, bitweise schreibbar und loeschbar.
JP62317644A JPS63166274A (ja) 1986-12-22 1987-12-17 ビット毎に書込みおよび消去可能な単層ポリシリコン層を有するｅｅｐｒｏｍメモリセル
US07/136,652 US4935790A (en) 1986-12-22 1987-12-22 EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit
US08/376,300 USRE37308E1 (en) 1986-12-22 1995-01-23 EEPROM memory cell with a single level of polysilicon programmable and erasable bit by bit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT22800/86A IT1199828B (it) 1986-12-22 1986-12-22 Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit

Publications (2)

Publication Number Publication Date
IT8622800A0 IT8622800A0 (it) 1986-12-22
IT1199828B true IT1199828B (it) 1989-01-05

Family

ID=11200571

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22800/86A IT1199828B (it) 1986-12-22 1986-12-22 Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit

Country Status (5)

Country Link
US (1) US4935790A (it)
EP (1) EP0272732B1 (it)
JP (1) JPS63166274A (it)
DE (1) DE3780784T2 (it)
IT (1) IT1199828B (it)

Families Citing this family (32)

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JPH03206661A (ja) * 1990-01-09 1991-09-10 Fujitsu Ltd 半導体装置
JP2933090B2 (ja) * 1990-04-25 1999-08-09 富士通株式会社 不揮発性半導体記憶装置
JP3083547B2 (ja) * 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
US5355007A (en) * 1990-11-23 1994-10-11 Texas Instruments Incorporated Devices for non-volatile memory, systems and methods
US5282161A (en) * 1990-12-31 1994-01-25 Sgs-Thomson Microelectronics S.R.L. Eeprom cell having a read interface isolated from the write/erase interface
DE69018832T2 (de) * 1990-12-31 1995-11-23 Sgs Thomson Microelectronics EEPROM-Zelle mit einschichtigem Metallgate und mit einem Lese-Interface des externen Schaltkreises, welches isoliert ist vom Schreib/Lösch-Interface des Programmierungsschaltkreises.
US5217915A (en) * 1991-04-08 1993-06-08 Texas Instruments Incorporated Method of making gate array base cell
US5412599A (en) * 1991-09-26 1995-05-02 Sgs-Thomson Microelectronics, S.R.L. Null consumption, nonvolatile, programmable switch
JP3293893B2 (ja) * 1991-12-09 2002-06-17 株式会社東芝 半導体不揮発性記憶装置の製造方法
US5440159A (en) * 1993-09-20 1995-08-08 Atmel Corporation Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer
JP2663863B2 (ja) * 1994-04-19 1997-10-15 日本電気株式会社 不揮発性半導体記憶装置
US5753954A (en) * 1996-07-19 1998-05-19 National Semiconductor Corporation Single-poly neuron MOS transistor
US5719427A (en) * 1997-01-14 1998-02-17 Pericom Semiconductor Corp. Avalanche-enhanced CMOS transistor for EPROM/EEPROM and ESD-protection structures
US5885871A (en) * 1997-07-31 1999-03-23 Stmicrolelectronics, Inc. Method of making EEPROM cell structure
US6044018A (en) * 1998-06-17 2000-03-28 Mosel Vitelic, Inc. Single-poly flash memory cell for embedded application and related methods
JP3503538B2 (ja) * 1999-08-20 2004-03-08 セイコーエプソン株式会社 半導体記憶装置
EP1091408A1 (en) * 1999-10-07 2001-04-11 STMicroelectronics S.r.l. Non-volatile memory cell with a single level of polysilicon
EP1096575A1 (en) 1999-10-07 2001-05-02 STMicroelectronics S.r.l. Non-volatile memory cell with a single level of polysilicon and corresponding manufacturing process
US6747308B2 (en) * 2001-12-28 2004-06-08 Texas Instruments Incorporated Single poly EEPROM with reduced area
KR100505107B1 (ko) * 2003-01-08 2005-07-29 삼성전자주식회사 이이피롬 장치
JP2005353984A (ja) 2004-06-14 2005-12-22 Seiko Epson Corp 不揮発性記憶装置
JP4591691B2 (ja) * 2005-06-07 2010-12-01 セイコーエプソン株式会社 半導体装置
JP4548603B2 (ja) 2005-06-08 2010-09-22 セイコーエプソン株式会社 半導体装置
JP2006344735A (ja) * 2005-06-08 2006-12-21 Seiko Epson Corp 半導体装置
JP4613761B2 (ja) 2005-09-09 2011-01-19 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4665677B2 (ja) 2005-09-09 2011-04-06 セイコーエプソン株式会社 集積回路装置及び電子機器
JP4404032B2 (ja) * 2005-09-09 2010-01-27 セイコーエプソン株式会社 集積回路装置及び電子機器
KR100667909B1 (ko) * 2005-12-29 2007-01-11 매그나칩 반도체 유한회사 비휘발성 반도체 메모리 장치
US8040212B2 (en) * 2009-07-22 2011-10-18 Volterra Semiconductor Corporation Low profile inductors for high density circuit boards
JP5668905B2 (ja) * 2009-09-07 2015-02-12 セイコーＮｐｃ株式会社 不揮発性半導体メモリ
US11282844B2 (en) * 2018-06-27 2022-03-22 Ememory Technology Inc. Erasable programmable non-volatile memory including two floating gate transistors with the same floating gate
US10846458B2 (en) 2018-08-30 2020-11-24 Taiwan Semiconductor Manufacturing Company Ltd. Engineering change order cell structure having always-on transistor

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7500550A (nl) * 1975-01-17 1976-07-20 Philips Nv Halfgeleider-geheugeninrichting.
US4037242A (en) * 1975-12-29 1977-07-19 Texas Instruments Incorporated Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device
DE3007892C2 (de) * 1980-03-01 1982-06-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Floating-Gate-Speicherzelle
US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
DE3029539A1 (de) * 1980-08-04 1982-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle
JPS6034198B2 (ja) * 1980-11-26 1985-08-07 富士通株式会社 不揮発性メモリ
DE3174417D1 (en) * 1980-12-08 1986-05-22 Toshiba Kk Semiconductor memory device
US4531203A (en) * 1980-12-20 1985-07-23 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor memory device and method for manufacturing the same
DE3334296T1 (de) * 1982-03-09 1984-05-03 Rca Corp., New York, N.Y. Schwebe-Gate-Speicher
US4558339A (en) * 1982-03-09 1985-12-10 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
JPS5960797A (ja) * 1982-09-30 1984-04-06 Toshiba Corp 不揮発性半導体メモリ装置
JPS59155968A (ja) * 1983-02-25 1984-09-05 Toshiba Corp 半導体記憶装置
JPS6074577A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 不揮発性半導体メモリ装置
JPS60260147A (ja) * 1984-06-06 1985-12-23 Fujitsu Ltd 半導体装置
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
US4649520A (en) * 1984-11-07 1987-03-10 Waferscale Integration Inc. Single layer polycrystalline floating gate
JPH06101548B2 (ja) * 1985-03-30 1994-12-12 株式会社東芝 半導体記憶装置

Also Published As

Publication number Publication date
DE3780784D1 (de) 1992-09-03
DE3780784T2 (de) 1993-03-18
IT8622800A0 (it) 1986-12-22
EP0272732A2 (en) 1988-06-29
EP0272732A3 (en) 1989-03-15
US4935790A (en) 1990-06-19
EP0272732B1 (en) 1992-07-29
JPS63166274A (ja) 1988-07-09

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19961227