DE3584362D1 - Nichtfluechtige halbleiterspeicheranordnung mit schreibeschaltung. - Google Patents

Nichtfluechtige halbleiterspeicheranordnung mit schreibeschaltung.

Info

Publication number
DE3584362D1
DE3584362D1 DE8585116578T DE3584362T DE3584362D1 DE 3584362 D1 DE3584362 D1 DE 3584362D1 DE 8585116578 T DE8585116578 T DE 8585116578T DE 3584362 T DE3584362 T DE 3584362T DE 3584362 D1 DE3584362 D1 DE 3584362D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
nonvolatile semiconductor
write circuit
write
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585116578T
Other languages
English (en)
Inventor
Misao Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3584362D1 publication Critical patent/DE3584362D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
DE8585116578T 1984-12-28 1985-12-27 Nichtfluechtige halbleiterspeicheranordnung mit schreibeschaltung. Expired - Fee Related DE3584362D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27743484 1984-12-28

Publications (1)

Publication Number Publication Date
DE3584362D1 true DE3584362D1 (de) 1991-11-14

Family

ID=17583505

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585116578T Expired - Fee Related DE3584362D1 (de) 1984-12-28 1985-12-27 Nichtfluechtige halbleiterspeicheranordnung mit schreibeschaltung.

Country Status (4)

Country Link
US (1) US4710900A (de)
EP (1) EP0186907B1 (de)
JP (1) JPH0746515B2 (de)
DE (1) DE3584362D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1214607B (it) * 1985-05-14 1990-01-18 Ates Componenti Elettron Circuito di precarica per linee di riga di un sistema di memoria, in particolare a celle programmabili.
US5050124A (en) * 1986-09-30 1991-09-17 Kabushiki Kaisha Toshiba Semiconductor memory having load transistor circuit
FR2605447B1 (fr) * 1986-10-20 1988-12-09 Eurotechnique Sa Memoire non volatile programmable electriquement
FR2606199B1 (fr) * 1986-11-04 1988-12-09 Eurotechnique Sa Circuit integre du type circuit logique comportant une memoire non volatile programmable electriquement
JP2589076B2 (ja) * 1987-01-14 1997-03-12 日本テキサス・インスツルメンツ株式会社 記憶装置
FR2609831B1 (fr) * 1987-01-16 1989-03-31 Thomson Semiconducteurs Circuit de lecture pour memoire
JPH0777078B2 (ja) * 1987-01-31 1995-08-16 株式会社東芝 不揮発性半導体メモリ
JPH0772996B2 (ja) * 1987-01-31 1995-08-02 株式会社東芝 不揮発性半導体メモリ
JPS63251999A (ja) * 1987-04-08 1988-10-19 Mitsubishi Electric Corp 半導体記憶装置
US4885719A (en) * 1987-08-19 1989-12-05 Ict International Cmos Technology, Inc. Improved logic cell array using CMOS E2 PROM cells
JPH081759B2 (ja) * 1987-11-24 1996-01-10 株式会社東芝 不揮発性メモリ
US4858186A (en) * 1988-01-12 1989-08-15 Intle Corporation A circuit for providing a load for the charging of an EPROM cell
US4820941A (en) * 1988-02-01 1989-04-11 Texas Instruments Incorporated Decoder driver circuit for programming high-capacitance lines
IT1228166B (it) * 1988-10-06 1991-05-31 Sgs Thomson Microelectronics Circuito programmabile di selezione statica per dispositivi programmabili
JPH0821849B2 (ja) * 1988-10-25 1996-03-04 富士通株式会社 半導体記憶装置
US5027320A (en) * 1989-09-22 1991-06-25 Cypress Semiconductor Corp. EPROM circuit having enhanced programmability and improved speed and reliability
JPH03179780A (ja) * 1989-12-07 1991-08-05 Fujitsu Ltd 半導体装置
US5481492A (en) * 1994-12-14 1996-01-02 The United States Of America As Represented By The Secretary Of The Navy Floating gate injection voltage regulator
JP3159359B2 (ja) * 1995-06-22 2001-04-23 日本電気株式会社 半導体装置
US5673218A (en) 1996-03-05 1997-09-30 Shepard; Daniel R. Dual-addressed rectifier storage device
US6956757B2 (en) 2000-06-22 2005-10-18 Contour Semiconductor, Inc. Low cost high density rectifier matrix memory
US7512029B2 (en) * 2006-06-09 2009-03-31 Micron Technology, Inc. Method and apparatus for managing behavior of memory devices
DE602006011005D1 (de) 2006-08-24 2010-01-21 St Microelectronics Srl Speichervorrichtung mit einem Zeilenselektor mit in Serie geschalteten Mittelspannungstransistoren
US7813157B2 (en) * 2007-10-29 2010-10-12 Contour Semiconductor, Inc. Non-linear conductor memory
US8325556B2 (en) 2008-10-07 2012-12-04 Contour Semiconductor, Inc. Sequencing decoder circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
EP0088912A3 (de) * 1982-03-15 1985-11-06 Texas Instruments Incorporated Subschwellenwert-Lastelement für statische RAM-Zelle
US4446536A (en) * 1982-06-21 1984-05-01 Mcdonnell Douglas Corporation Complementary metal oxide semiconductors address drive circuit
JPS5952497A (ja) * 1982-09-17 1984-03-27 Nec Corp デコ−ダ回路
US4565932A (en) * 1983-12-29 1986-01-21 Motorola, Inc. High voltage circuit for use in programming memory circuits (EEPROMs)

Also Published As

Publication number Publication date
EP0186907B1 (de) 1991-10-09
US4710900A (en) 1987-12-01
JPH0746515B2 (ja) 1995-05-17
EP0186907A2 (de) 1986-07-09
JPS61267996A (ja) 1986-11-27
EP0186907A3 (en) 1988-04-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee