DE3886284T2 - Halbleiterspeicheranordnung mit nichtflüchtigen Speichertransistoren. - Google Patents

Halbleiterspeicheranordnung mit nichtflüchtigen Speichertransistoren.

Info

Publication number
DE3886284T2
DE3886284T2 DE3886284T DE3886284T DE3886284T2 DE 3886284 T2 DE3886284 T2 DE 3886284T2 DE 3886284 T DE3886284 T DE 3886284T DE 3886284 T DE3886284 T DE 3886284T DE 3886284 T2 DE3886284 T2 DE 3886284T2
Authority
DE
Germany
Prior art keywords
memory device
volatile memory
semiconductor memory
transistors
memory transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3886284T
Other languages
English (en)
Other versions
DE3886284D1 (de
Inventor
Shinichi Iwashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3886284D1 publication Critical patent/DE3886284D1/de
Publication of DE3886284T2 publication Critical patent/DE3886284T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE3886284T 1987-07-08 1988-07-07 Halbleiterspeicheranordnung mit nichtflüchtigen Speichertransistoren. Expired - Fee Related DE3886284T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62171511A JPH061840B2 (ja) 1987-07-08 1987-07-08 光遮へい型ｕｐｒｏｍ

Publications (2)

Publication Number Publication Date
DE3886284D1 DE3886284D1 (de) 1994-01-27
DE3886284T2 true DE3886284T2 (de) 1994-06-30

Family

ID=15924473

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3886284T Expired - Fee Related DE3886284T2 (de) 1987-07-08 1988-07-07 Halbleiterspeicheranordnung mit nichtflüchtigen Speichertransistoren.

Country Status (4)

Country Link
US (1) US4942450A (de)
EP (1) EP0298489B1 (de)
JP (1) JPH061840B2 (de)
DE (1) DE3886284T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5680353A (en) * 1988-09-14 1997-10-21 Sgs-Thomson Microelectronics, S.A. EPROM memory with internal signature concerning, in particular, the programming mode
JPH0777239B2 (ja) * 1988-09-22 1995-08-16 日本電気株式会社 浮遊ゲート型不揮発性半導体記憶装置
JP2598328B2 (ja) * 1989-10-17 1997-04-09 三菱電機株式会社 半導体装置およびその製造方法
JP3083547B2 (ja) * 1990-07-12 2000-09-04 株式会社日立製作所 半導体集積回路装置
US5151769A (en) * 1991-04-04 1992-09-29 General Electric Company Optically patterned RF shield for an integrated circuit chip for analog and/or digital operation at microwave frequencies
JP3202280B2 (ja) * 1991-11-21 2001-08-27 株式会社東芝 不揮発性半導体記憶装置
US5298796A (en) * 1992-07-08 1994-03-29 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Nonvolatile programmable neural network synaptic array
US5525827A (en) * 1993-11-05 1996-06-11 Norman; Kevin A. Unerasable electronic programmable read only memory (UPROM™)
US5815433A (en) * 1994-12-27 1998-09-29 Nkk Corporation Mask ROM device with gate insulation film based in pad oxide film and/or nitride film
US5867429A (en) * 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US6489952B1 (en) * 1998-11-17 2002-12-03 Semiconductor Energy Laboratory Co., Ltd. Active matrix type semiconductor display device
FR2812753B1 (fr) * 2000-08-03 2003-01-03 St Microelectronics Sa Point memoire non volatile
JP4639650B2 (ja) * 2004-06-09 2011-02-23 セイコーエプソン株式会社 半導体装置
US8928113B2 (en) * 2011-04-08 2015-01-06 Taiwan Semiconductor Manufacturing Co., Ltd. Layout scheme and method for forming device cells in semiconductor devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4281398A (en) * 1980-02-12 1981-07-28 Mostek Corporation Block redundancy for memory array
JPS58197777A (ja) * 1982-05-12 1983-11-17 Mitsubishi Electric Corp 半導体不揮発性記憶装置
US4519050A (en) * 1982-06-17 1985-05-21 Intel Corporation Radiation shield for an integrated circuit memory with redundant elements
JPS5935477A (ja) * 1982-08-23 1984-02-27 Seiko Epson Corp 半導体装置
US4805138A (en) * 1985-08-23 1989-02-14 Texas Instruments Incorporated An unerasable eprom cell
JPS62143476A (ja) * 1985-12-18 1987-06-26 Fujitsu Ltd 半導体記憶装置
JPH0766947B2 (ja) * 1986-08-26 1995-07-19 日本電気株式会社 浮遊ゲ−ト型不揮発性半導体記憶装置

Also Published As

Publication number Publication date
US4942450A (en) 1990-07-17
EP0298489A3 (en) 1990-01-17
EP0298489B1 (de) 1993-12-15
JPS6414969A (en) 1989-01-19
DE3886284D1 (de) 1994-01-27
JPH061840B2 (ja) 1994-01-05
EP0298489A2 (de) 1989-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee