FR2812753B1 - Point memoire non volatile - Google Patents
Point memoire non volatileInfo
- Publication number
- FR2812753B1 FR2812753B1 FR0010287A FR0010287A FR2812753B1 FR 2812753 B1 FR2812753 B1 FR 2812753B1 FR 0010287 A FR0010287 A FR 0010287A FR 0010287 A FR0010287 A FR 0010287A FR 2812753 B1 FR2812753 B1 FR 2812753B1
- Authority
- FR
- France
- Prior art keywords
- volatile memory
- memory point
- point
- volatile
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0010287A FR2812753B1 (fr) | 2000-08-03 | 2000-08-03 | Point memoire non volatile |
| US09/921,280 US6639270B2 (en) | 2000-08-03 | 2001-08-02 | Non-volatile memory cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0010287A FR2812753B1 (fr) | 2000-08-03 | 2000-08-03 | Point memoire non volatile |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2812753A1 FR2812753A1 (fr) | 2002-02-08 |
| FR2812753B1 true FR2812753B1 (fr) | 2003-01-03 |
Family
ID=8853289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0010287A Expired - Fee Related FR2812753B1 (fr) | 2000-08-03 | 2000-08-03 | Point memoire non volatile |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6639270B2 (fr) |
| FR (1) | FR2812753B1 (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7402874B2 (en) * | 2005-04-29 | 2008-07-22 | Texas Instruments Incorporated | One time programmable EPROM fabrication in STI CMOS technology |
| US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
| EP2686882A4 (fr) * | 2011-03-15 | 2014-11-12 | Hewlett Packard Development Co | Cellule de mémoire ayant une structure courbe close |
| US8324663B2 (en) | 2011-04-01 | 2012-12-04 | Texas Instruments Incorporated | Area efficient high-speed dual one-time programmable differential bit cell |
| CN104600073B (zh) * | 2013-10-30 | 2017-06-06 | 上海华虹宏力半导体制造有限公司 | Otp器件及制造方法 |
| US9356105B1 (en) * | 2014-12-29 | 2016-05-31 | Macronix International Co., Ltd. | Ring gate transistor design for flash memory |
| US9953727B1 (en) | 2017-02-10 | 2018-04-24 | Globalfoundries Inc. | Circuit and method for detecting time dependent dielectric breakdown (TDDB) shorts and signal-margin testing |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH061840B2 (ja) * | 1987-07-08 | 1994-01-05 | 日本電気株式会社 | 光遮へい型ｕｐｒｏｍ |
| DE69204829T2 (de) * | 1992-06-30 | 1996-02-22 | Sgs Thomson Microelectronics | Integrierte Schaltung mit vollständigem Schutz gegen Ultraviolettstrahlen. |
| JPH06204468A (ja) * | 1992-12-28 | 1994-07-22 | Nippon Steel Corp | 電界効果トランジスタ |
| KR0125113B1 (ko) * | 1993-02-02 | 1997-12-11 | 모리시타 요이찌 | 불휘발성 반도체 메모리 집적장치 및 그 제조방법 |
| US6433382B1 (en) * | 1995-04-06 | 2002-08-13 | Motorola, Inc. | Split-gate vertically oriented EEPROM device and process |
| JP2001189439A (ja) * | 2000-01-05 | 2001-07-10 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置の製造方法及び不揮発性半導体記憶装置 |
-
2000
- 2000-08-03 FR FR0010287A patent/FR2812753B1/fr not_active Expired - Fee Related
-
2001
- 2001-08-02 US US09/921,280 patent/US6639270B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2812753A1 (fr) | 2002-02-08 |
| US20020050610A1 (en) | 2002-05-02 |
| US6639270B2 (en) | 2003-10-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20090430 |