DE69921974D1 - Nichtflüchtige Speicheranordnung, insbesondere vom Flash-Typ - Google Patents

Nichtflüchtige Speicheranordnung, insbesondere vom Flash-Typ

Info

Publication number
DE69921974D1
DE69921974D1 DE69921974T DE69921974T DE69921974D1 DE 69921974 D1 DE69921974 D1 DE 69921974D1 DE 69921974 T DE69921974 T DE 69921974T DE 69921974 T DE69921974 T DE 69921974T DE 69921974 D1 DE69921974 D1 DE 69921974D1
Authority
DE
Germany
Prior art keywords
memory device
volatile memory
flash type
flash
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69921974T
Other languages
English (en)
Inventor
Rino Micheloni
Matteo Zammattio
Giovanni Campardo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69921974D1 publication Critical patent/DE69921974D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE69921974T 1999-06-24 1999-06-24 Nichtflüchtige Speicheranordnung, insbesondere vom Flash-Typ Expired - Lifetime DE69921974D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99830396A EP1063653B1 (de) 1999-06-24 1999-06-24 Nichtflüchtige Speicheranordnung, insbesondere vom Flash-Typ

Publications (1)

Publication Number Publication Date
DE69921974D1 true DE69921974D1 (de) 2004-12-23

Family

ID=8243469

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69921974T Expired - Lifetime DE69921974D1 (de) 1999-06-24 1999-06-24 Nichtflüchtige Speicheranordnung, insbesondere vom Flash-Typ

Country Status (4)

Country Link
US (1) US6456530B1 (de)
EP (1) EP1063653B1 (de)
JP (1) JP2001028197A (de)
DE (1) DE69921974D1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1327992B1 (de) * 2002-01-11 2005-03-30 STMicroelectronics S.r.l. Architektur eines Flash-EEPROMs, der gleichzeitig während des Löschens oder Programmierens von einem oder mehreren anderen Sektoren, lesbar ist.
US6778437B1 (en) * 2003-08-07 2004-08-17 Advanced Micro Devices, Inc. Memory circuit for providing word line redundancy in a memory sector
JP4290618B2 (ja) 2004-07-27 2009-07-08 Ｎｅｃエレクトロニクス株式会社 不揮発性メモリ及びその動作方法
US7215573B2 (en) * 2005-08-25 2007-05-08 Silicon Storage Technology, Inc. Method and apparatus for reducing operation disturbance
EP1845532B1 (de) * 2006-04-12 2009-04-01 STMicroelectronics S.r.l. Spaltendekodierungssystem für mit Niederspannungstransistoren implementierte Halbleiterspeichervorrichtungen
JP5197704B2 (ja) * 2010-09-22 2013-05-15 株式会社東芝 半導体装置
KR20120122569A (ko) * 2011-04-29 2012-11-07 에스케이하이닉스 주식회사 반도체 메모리 시스템 및 그 구동 방법
ITUB20153235A1 (it) * 2015-08-26 2017-02-26 St Microelectronics Srl Decodificatore di riga per un dispositivo di memoria non volatile e relativo dispositivo di memoria non volatile

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270980A (en) * 1991-10-28 1993-12-14 Eastman Kodak Company Sector erasable flash EEPROM
EP0961290B1 (de) * 1991-12-09 2001-11-14 Fujitsu Limited Flash-Speicher mit besserer Löschbarkeit und dessen Schaltung
JP3099926B2 (ja) * 1993-04-30 2000-10-16 株式会社東芝 不揮発性半導体記憶装置
US5406517A (en) * 1993-08-23 1995-04-11 Advanced Micro Devices, Inc. Distributed negative gate power supply
KR0172532B1 (ko) * 1995-10-18 1999-03-30 김주용 플래쉬 메모리 장치
US5657268A (en) * 1995-11-20 1997-08-12 Texas Instruments Incorporated Array-source line, bitline and wordline sequence in flash operations
US5818764A (en) * 1997-02-06 1998-10-06 Macronix International Co., Ltd. Block-level wordline enablement to reduce negative wordline stress
US6055184A (en) * 1998-09-02 2000-04-25 Texas Instruments Incorporated Semiconductor memory device having programmable parallel erase operation
US6125058A (en) * 1999-10-19 2000-09-26 Advanced Micro Devices, Inc. System for optimizing the equalization pulse of a read sense amplifier for a simultaneous operation flash memory device
US6285588B1 (en) * 1999-12-01 2001-09-04 Advanced Micro Devices, Inc. Erase scheme to tighten the threshold voltage distribution of EEPROM flash memory cells

Also Published As

Publication number Publication date
EP1063653B1 (de) 2004-11-17
JP2001028197A (ja) 2001-01-30
US6456530B1 (en) 2002-09-24
EP1063653A1 (de) 2000-12-27

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Legal Events

Date Code Title Description
8332 No legal effect for de