FR2823900B1 - Memoire non volatile de type famos - Google Patents
Memoire non volatile de type famosInfo
- Publication number
- FR2823900B1 FR2823900B1 FR0105343A FR0105343A FR2823900B1 FR 2823900 B1 FR2823900 B1 FR 2823900B1 FR 0105343 A FR0105343 A FR 0105343A FR 0105343 A FR0105343 A FR 0105343A FR 2823900 B1 FR2823900 B1 FR 2823900B1
- Authority
- FR
- France
- Prior art keywords
- volatile
- famos memory
- famos
- memory
- volatile famos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUFQPHANEAPEMJ-UHFFFAOYSA-N famotidine Chemical compound NC(N)=NC1=NC(CSCCC(N)=NS(N)(=O)=O)=CS1 XUFQPHANEAPEMJ-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0105343A FR2823900B1 (fr) | 2001-04-20 | 2001-04-20 | Memoire non volatile de type famos |
US10/126,442 US6707697B2 (en) | 2001-04-20 | 2002-04-19 | FAMOS type non-volatile memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0105343A FR2823900B1 (fr) | 2001-04-20 | 2001-04-20 | Memoire non volatile de type famos |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2823900A1 FR2823900A1 (fr) | 2002-10-25 |
FR2823900B1 true FR2823900B1 (fr) | 2003-08-15 |
Family
ID=8862505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0105343A Expired - Lifetime FR2823900B1 (fr) | 2001-04-20 | 2001-04-20 | Memoire non volatile de type famos |
Country Status (2)
Country | Link |
---|---|
US (1) | US6707697B2 (fr) |
FR (1) | FR2823900B1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6861337B2 (en) * | 2002-05-10 | 2005-03-01 | General Semiconductor, Inc. | Method for using a surface geometry for a MOS-gated device in the manufacture of dice having different sizes |
GB0308758D0 (en) * | 2003-04-16 | 2003-05-21 | Koninkl Philips Electronics Nv | Protected power devices |
FR2880982A1 (fr) | 2005-01-19 | 2006-07-21 | St Microelectronics Sa | Memoire morte rom integree a haute densite d'acces reduit |
US7402874B2 (en) * | 2005-04-29 | 2008-07-22 | Texas Instruments Incorporated | One time programmable EPROM fabrication in STI CMOS technology |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US20090090913A1 (en) * | 2007-10-03 | 2009-04-09 | Walker Andrew J | Dual-gate memory device with channel crystallization for multiple levels per cell (mlc) |
US8243490B2 (en) | 2009-11-30 | 2012-08-14 | Infineon Technologies Ag | Memory with intervening transistor |
US8324663B2 (en) | 2011-04-01 | 2012-12-04 | Texas Instruments Incorporated | Area efficient high-speed dual one-time programmable differential bit cell |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3609710A (en) * | 1969-05-29 | 1971-09-28 | Bell Telephone Labor Inc | Associative memory cell with interrogation on normal digit circuits |
US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
KR0125113B1 (ko) * | 1993-02-02 | 1997-12-11 | 모리시타 요이찌 | 불휘발성 반도체 메모리 집적장치 및 그 제조방법 |
US5641989A (en) * | 1994-06-03 | 1997-06-24 | Nippon Steel Corporation | Semiconductor device having field-shield isolation structures and a method of making the same |
US5973354A (en) * | 1998-03-30 | 1999-10-26 | Worldwide Semiconductor Manufacturing Corporation | Single polycylindrical flash memory cell having high coupling ratio |
US6081451A (en) * | 1998-04-01 | 2000-06-27 | National Semiconductor Corporation | Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages |
IT1318137B1 (it) * | 2000-07-07 | 2003-07-23 | Cit Alcatel | Metodo ed apparato per controllare e supervisionare dispositivielettronici. |
-
2001
- 2001-04-20 FR FR0105343A patent/FR2823900B1/fr not_active Expired - Lifetime
-
2002
- 2002-04-19 US US10/126,442 patent/US6707697B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020175353A1 (en) | 2002-11-28 |
US6707697B2 (en) | 2004-03-16 |
FR2823900A1 (fr) | 2002-10-25 |
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