DE3886284D1 - Halbleiterspeicheranordnung mit nichtflüchtigen Speichertransistoren. - Google Patents
Halbleiterspeicheranordnung mit nichtflüchtigen Speichertransistoren.Info
- Publication number
- DE3886284D1 DE3886284D1 DE88110893T DE3886284T DE3886284D1 DE 3886284 D1 DE3886284 D1 DE 3886284D1 DE 88110893 T DE88110893 T DE 88110893T DE 3886284 T DE3886284 T DE 3886284T DE 3886284 D1 DE3886284 D1 DE 3886284D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- volatile memory
- semiconductor memory
- transistors
- memory transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62171511A JPH061840B2 (ja) | 1987-07-08 | 1987-07-08 | 光遮へい型uprom |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3886284D1 true DE3886284D1 (de) | 1994-01-27 |
DE3886284T2 DE3886284T2 (de) | 1994-06-30 |
Family
ID=15924473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3886284T Expired - Fee Related DE3886284T2 (de) | 1987-07-08 | 1988-07-07 | Halbleiterspeicheranordnung mit nichtflüchtigen Speichertransistoren. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4942450A (de) |
EP (1) | EP0298489B1 (de) |
JP (1) | JPH061840B2 (de) |
DE (1) | DE3886284T2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5680353A (en) * | 1988-09-14 | 1997-10-21 | Sgs-Thomson Microelectronics, S.A. | EPROM memory with internal signature concerning, in particular, the programming mode |
JPH0777239B2 (ja) * | 1988-09-22 | 1995-08-16 | 日本電気株式会社 | 浮遊ゲート型不揮発性半導体記憶装置 |
JP2598328B2 (ja) * | 1989-10-17 | 1997-04-09 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3083547B2 (ja) * | 1990-07-12 | 2000-09-04 | 株式会社日立製作所 | 半導体集積回路装置 |
US5151769A (en) * | 1991-04-04 | 1992-09-29 | General Electric Company | Optically patterned RF shield for an integrated circuit chip for analog and/or digital operation at microwave frequencies |
JP3202280B2 (ja) * | 1991-11-21 | 2001-08-27 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5298796A (en) * | 1992-07-08 | 1994-03-29 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Nonvolatile programmable neural network synaptic array |
US5525827A (en) * | 1993-11-05 | 1996-06-11 | Norman; Kevin A. | Unerasable electronic programmable read only memory (UPROM™) |
US5815433A (en) * | 1994-12-27 | 1998-09-29 | Nkk Corporation | Mask ROM device with gate insulation film based in pad oxide film and/or nitride film |
US5867429A (en) * | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
US6489952B1 (en) * | 1998-11-17 | 2002-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix type semiconductor display device |
FR2812753B1 (fr) * | 2000-08-03 | 2003-01-03 | St Microelectronics Sa | Point memoire non volatile |
JP4639650B2 (ja) * | 2004-06-09 | 2011-02-23 | セイコーエプソン株式会社 | 半導体装置 |
US8928113B2 (en) * | 2011-04-08 | 2015-01-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Layout scheme and method for forming device cells in semiconductor devices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4281398A (en) * | 1980-02-12 | 1981-07-28 | Mostek Corporation | Block redundancy for memory array |
JPS58197777A (ja) * | 1982-05-12 | 1983-11-17 | Mitsubishi Electric Corp | 半導体不揮発性記憶装置 |
US4519050A (en) * | 1982-06-17 | 1985-05-21 | Intel Corporation | Radiation shield for an integrated circuit memory with redundant elements |
JPS5935477A (ja) * | 1982-08-23 | 1984-02-27 | Seiko Epson Corp | 半導体装置 |
US4805138A (en) * | 1985-08-23 | 1989-02-14 | Texas Instruments Incorporated | An unerasable eprom cell |
JPS62143476A (ja) * | 1985-12-18 | 1987-06-26 | Fujitsu Ltd | 半導体記憶装置 |
JPH0766947B2 (ja) * | 1986-08-26 | 1995-07-19 | 日本電気株式会社 | 浮遊ゲ−ト型不揮発性半導体記憶装置 |
-
1987
- 1987-07-08 JP JP62171511A patent/JPH061840B2/ja not_active Expired - Lifetime
-
1988
- 1988-07-07 DE DE3886284T patent/DE3886284T2/de not_active Expired - Fee Related
- 1988-07-07 EP EP88110893A patent/EP0298489B1/de not_active Expired - Lifetime
- 1988-07-08 US US07/216,588 patent/US4942450A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3886284T2 (de) | 1994-06-30 |
EP0298489A2 (de) | 1989-01-11 |
EP0298489A3 (en) | 1990-01-17 |
JPH061840B2 (ja) | 1994-01-05 |
US4942450A (en) | 1990-07-17 |
JPS6414969A (en) | 1989-01-19 |
EP0298489B1 (de) | 1993-12-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |