IT8683630A0 - Dispositivo di memoria non volatile a semiconduttore. - Google Patents

Dispositivo di memoria non volatile a semiconduttore.

Info

Publication number
IT8683630A0
IT8683630A0 IT8683630A IT8363086A IT8683630A0 IT 8683630 A0 IT8683630 A0 IT 8683630A0 IT 8683630 A IT8683630 A IT 8683630A IT 8363086 A IT8363086 A IT 8363086A IT 8683630 A0 IT8683630 A0 IT 8683630A0
Authority
IT
Italy
Prior art keywords
memory device
volatile memory
semiconductor non
semiconductor
volatile
Prior art date
Application number
IT8683630A
Other languages
English (en)
Other versions
IT1201834B (it
Inventor
Livio Baldi
Original Assignee
Sgs Microelettronica Spa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Microelettronica Spa filed Critical Sgs Microelettronica Spa
Priority to IT83630/86A priority Critical patent/IT1201834B/it
Publication of IT8683630A0 publication Critical patent/IT8683630A0/it
Priority to EP87830234A priority patent/EP0255489B1/en
Priority to DE8787830234T priority patent/DE3785509T2/de
Priority to US07/064,480 priority patent/US4816883A/en
Priority to JP62171373A priority patent/JPS6329980A/ja
Application granted granted Critical
Publication of IT1201834B publication Critical patent/IT1201834B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
IT83630/86A 1986-07-10 1986-07-10 Dispositivo di memoria non volatile a semiconduttore IT1201834B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT83630/86A IT1201834B (it) 1986-07-10 1986-07-10 Dispositivo di memoria non volatile a semiconduttore
EP87830234A EP0255489B1 (en) 1986-07-10 1987-06-22 Nonvolatile, semiconductor memory device
DE8787830234T DE3785509T2 (de) 1986-07-10 1987-06-22 Nichtfluechtige halbleiterspeicheranordnung.
US07/064,480 US4816883A (en) 1986-07-10 1987-06-22 Nonvolatile, semiconductor memory device
JP62171373A JPS6329980A (ja) 1986-07-10 1987-07-10 持久記憶型半導体メモリデバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT83630/86A IT1201834B (it) 1986-07-10 1986-07-10 Dispositivo di memoria non volatile a semiconduttore

Publications (2)

Publication Number Publication Date
IT8683630A0 true IT8683630A0 (it) 1986-07-10
IT1201834B IT1201834B (it) 1989-02-02

Family

ID=11323394

Family Applications (1)

Application Number Title Priority Date Filing Date
IT83630/86A IT1201834B (it) 1986-07-10 1986-07-10 Dispositivo di memoria non volatile a semiconduttore

Country Status (5)

Country Link
US (1) US4816883A (it)
EP (1) EP0255489B1 (it)
JP (1) JPS6329980A (it)
DE (1) DE3785509T2 (it)
IT (1) IT1201834B (it)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5060195A (en) * 1989-12-29 1991-10-22 Texas Instruments Incorporated Hot electron programmable, tunnel electron erasable contactless EEPROM
US5106772A (en) * 1990-01-09 1992-04-21 Intel Corporation Method for improving the electrical erase characteristics of floating gate memory cells by immediately depositing a protective polysilicon layer following growth of the tunnel or gate oxide
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction
US5444279A (en) * 1993-08-11 1995-08-22 Micron Semiconductor, Inc. Floating gate memory device having discontinuous gate oxide thickness over the channel region
US5519653A (en) * 1994-03-11 1996-05-21 Thomas; Mammen Channel accelerated carrier tunneling-(CACT) method for programming memories
US5471422A (en) * 1994-04-11 1995-11-28 Motorola, Inc. EEPROM cell with isolation transistor and methods for making and operating the same
JP3238576B2 (ja) * 1994-08-19 2001-12-17 株式会社東芝 不揮発性半導体記憶装置
US5552338A (en) * 1994-09-26 1996-09-03 Intel Corporation Method of using latchup current to blow a fuse in an integrated circuit
EP0730310B1 (en) * 1995-03-03 2001-10-17 STMicroelectronics S.r.l. Electrically programmable and erasable non-volatile memory cell and memory devices of FLASH and EEPROM type
US6965142B2 (en) * 1995-03-07 2005-11-15 Impinj, Inc. Floating-gate semiconductor structures
US5666307A (en) * 1995-11-14 1997-09-09 Programmable Microelectronics Corporation PMOS flash memory cell capable of multi-level threshold voltage storage
US5687118A (en) * 1995-11-14 1997-11-11 Programmable Microelectronics Corporation PMOS memory cell with hot electron injection programming and tunnelling erasing
US5706227A (en) * 1995-12-07 1998-01-06 Programmable Microelectronics Corporation Double poly split gate PMOS flash memory cell
US6060360A (en) * 1997-04-14 2000-05-09 Taiwan Semiconductor Manufacturing Company Method of manufacture of P-channel EEprom and flash EEprom devices
US5933732A (en) 1997-05-07 1999-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Nonvolatile devices with P-channel EEPROM devices as injector
US7154153B1 (en) * 1997-07-29 2006-12-26 Micron Technology, Inc. Memory device
US6031263A (en) * 1997-07-29 2000-02-29 Micron Technology, Inc. DEAPROM and transistor with gallium nitride or gallium aluminum nitride gate
US6794255B1 (en) 1997-07-29 2004-09-21 Micron Technology, Inc. Carburized silicon gate insulators for integrated circuits
US6965123B1 (en) 1997-07-29 2005-11-15 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US7196929B1 (en) 1997-07-29 2007-03-27 Micron Technology Inc Method for operating a memory device having an amorphous silicon carbide gate insulator
US6936849B1 (en) 1997-07-29 2005-08-30 Micron Technology, Inc. Silicon carbide gate transistor
US6746893B1 (en) 1997-07-29 2004-06-08 Micron Technology, Inc. Transistor with variable electron affinity gate and methods of fabrication and use
US6509603B2 (en) 2000-03-13 2003-01-21 Taiwan Semiconductor Manufacturing Company P-channel EEPROM and flash EEPROM devices
US6664909B1 (en) 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
DE10201303A1 (de) * 2002-01-15 2003-07-31 Infineon Technologies Ag Nichtflüchtige Zweitransistor-Halbleiterspeicherzelle sowie zugehöriges Herstellungsverfahren
US7180125B2 (en) * 2004-08-16 2007-02-20 Chih-Hsin Wang P-channel electrically alterable non-volatile memory cell
US7626864B2 (en) * 2006-04-26 2009-12-01 Chih-Hsin Wang Electrically alterable non-volatile memory cells and arrays
KR102597521B1 (ko) * 2023-03-28 2023-11-03 주식회사 이에스지케미칼 자외선 안정도를 향상시킨 탄산칼슘을 포함하는 친환경 바이오매스 tpu재질의 그레이팅 덮개

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
GB1517925A (en) * 1974-09-20 1978-07-19 Siemens Ag Storage field effect transistors
US4016588A (en) * 1974-12-27 1977-04-05 Nippon Electric Company, Ltd. Non-volatile semiconductor memory device
JPS5228229A (en) * 1975-08-28 1977-03-03 Mitsubishi Electric Corp Semiconductor memory
JPS5427778A (en) * 1977-08-04 1979-03-02 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory device
US4162504A (en) * 1977-12-27 1979-07-24 Rca Corp. Floating gate solid-state storage device
CH631287A5 (fr) * 1979-03-14 1982-07-30 Centre Electron Horloger Element de memoire non-volatile, electriquement reprogrammable.
US4608585A (en) * 1982-07-30 1986-08-26 Signetics Corporation Electrically erasable PROM cell
DE3275790D1 (en) * 1982-09-15 1987-04-23 Itt Ind Gmbh Deutsche Cmos memory cell with floating memory gate
JPS6197976A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd 半導体集積回路装置

Also Published As

Publication number Publication date
EP0255489A2 (en) 1988-02-03
EP0255489B1 (en) 1993-04-21
EP0255489A3 (en) 1988-07-06
DE3785509T2 (de) 1993-07-29
IT1201834B (it) 1989-02-02
US4816883A (en) 1989-03-28
JPS6329980A (ja) 1988-02-08
DE3785509D1 (de) 1993-05-27

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970730