IT8223344A0 - Dispositivo di memoria a semiconduttori. - Google Patents

Dispositivo di memoria a semiconduttori.

Info

Publication number
IT8223344A0
IT8223344A0 IT8223344A IT2334482A IT8223344A0 IT 8223344 A0 IT8223344 A0 IT 8223344A0 IT 8223344 A IT8223344 A IT 8223344A IT 2334482 A IT2334482 A IT 2334482A IT 8223344 A0 IT8223344 A0 IT 8223344A0
Authority
IT
Italy
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
IT8223344A
Other languages
English (en)
Other versions
IT1155067B (it
Inventor
Kazuhiro Komori
Satoru Ito
Satoshi Meguro
Toshimasa Kihara
Harumi Wakimoto
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8223344A0 publication Critical patent/IT8223344A0/it
Application granted granted Critical
Publication of IT1155067B publication Critical patent/IT1155067B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
IT23344/82A 1981-09-25 1982-09-20 Dispositivo di memoria a semiconduttori IT1155067B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150604A JPS5852871A (ja) 1981-09-25 1981-09-25 半導体記憶装置

Publications (2)

Publication Number Publication Date
IT8223344A0 true IT8223344A0 (it) 1982-09-20
IT1155067B IT1155067B (it) 1987-01-21

Family

ID=15500510

Family Applications (1)

Application Number Title Priority Date Filing Date
IT23344/82A IT1155067B (it) 1981-09-25 1982-09-20 Dispositivo di memoria a semiconduttori

Country Status (8)

Country Link
JP (1) JPS5852871A (it)
KR (1) KR900004730B1 (it)
DE (1) DE3235411A1 (it)
FR (1) FR2513793B1 (it)
GB (1) GB2109994B (it)
HK (1) HK70587A (it)
IT (1) IT1155067B (it)
SG (1) SG37387G (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516313A (en) * 1983-05-27 1985-05-14 Ncr Corporation Unified CMOS/SNOS semiconductor fabrication process
IT1213249B (it) * 1984-11-26 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione distrutture integrate includenti celle di memoria non volatili con strati di silicio autoallineati ed associati transistori.
FR2583920B1 (fr) * 1985-06-21 1987-07-31 Commissariat Energie Atomique Procede de fabrication d'un circuit integre et notamment d'une memoire eprom comportant deux composants distincts isoles electriquement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984822A (en) * 1974-12-30 1976-10-05 Intel Corporation Double polycrystalline silicon gate memory device

Also Published As

Publication number Publication date
FR2513793B1 (fr) 1989-02-17
GB2109994B (en) 1986-02-12
KR840001780A (ko) 1984-05-16
SG37387G (en) 1987-07-24
HK70587A (en) 1987-10-09
JPS5852871A (ja) 1983-03-29
FR2513793A1 (fr) 1983-04-01
KR900004730B1 (ko) 1990-07-05
IT1155067B (it) 1987-01-21
DE3235411A1 (de) 1983-04-14
GB2109994A (en) 1983-06-08

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950927