HK70587A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
HK70587A
HK70587A HK705/87A HK70587A HK70587A HK 70587 A HK70587 A HK 70587A HK 705/87 A HK705/87 A HK 705/87A HK 70587 A HK70587 A HK 70587A HK 70587 A HK70587 A HK 70587A
Authority
HK
Hong Kong
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
HK705/87A
Inventor
Kazuhiro Komori
Satoru Ito
Satoshi Meguro
Toshimasa Kihara
Harumi Wakimoto
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK70587A publication Critical patent/HK70587A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
HK705/87A 1981-09-25 1987-10-01 Semiconductor memory device HK70587A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150604A JPS5852871A (en) 1981-09-25 1981-09-25 Semiconductor memory storage

Publications (1)

Publication Number Publication Date
HK70587A true HK70587A (en) 1987-10-09

Family

ID=15500510

Family Applications (1)

Application Number Title Priority Date Filing Date
HK705/87A HK70587A (en) 1981-09-25 1987-10-01 Semiconductor memory device

Country Status (8)

Country Link
JP (1) JPS5852871A (en)
KR (1) KR900004730B1 (en)
DE (1) DE3235411A1 (en)
FR (1) FR2513793B1 (en)
GB (1) GB2109994B (en)
HK (1) HK70587A (en)
IT (1) IT1155067B (en)
SG (1) SG37387G (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516313A (en) * 1983-05-27 1985-05-14 Ncr Corporation Unified CMOS/SNOS semiconductor fabrication process
IT1213249B (en) * 1984-11-26 1989-12-14 Ates Componenti Elettron PROCESS FOR THE MANUFACTURE OF INTEGRATED STRUCTURES INCLUDING NON-VOLATILE MEMORY CELLS WITH SELF-ALIGNED SILICON LAYERS AND ASSOCIATED TRANSISTORS.
FR2583920B1 (en) * 1985-06-21 1987-07-31 Commissariat Energie Atomique METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT, ESPECIALLY AN EPROM MEMORY COMPRISING TWO DISTINCT ELECTRICALLY ISOLATED COMPONENTS

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3984822A (en) * 1974-12-30 1976-10-05 Intel Corporation Double polycrystalline silicon gate memory device

Also Published As

Publication number Publication date
JPS5852871A (en) 1983-03-29
GB2109994B (en) 1986-02-12
FR2513793A1 (en) 1983-04-01
KR840001780A (en) 1984-05-16
GB2109994A (en) 1983-06-08
IT8223344A0 (en) 1982-09-20
IT1155067B (en) 1987-01-21
SG37387G (en) 1987-07-24
KR900004730B1 (en) 1990-07-05
FR2513793B1 (en) 1989-02-17
DE3235411A1 (en) 1983-04-14

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Legal Events

Date Code Title Description
NR Patent deemed never to have been added to the register under section 13(7) of patents (transitional arrangements) rules