JPS5228229A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5228229A
JPS5228229A JP10430675A JP10430675A JPS5228229A JP S5228229 A JPS5228229 A JP S5228229A JP 10430675 A JP10430675 A JP 10430675A JP 10430675 A JP10430675 A JP 10430675A JP S5228229 A JPS5228229 A JP S5228229A
Authority
JP
Japan
Prior art keywords
semiconductor memory
type
channel
transistor
semiconductor district
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10430675A
Other languages
Japanese (ja)
Other versions
JPS572190B2 (en
Inventor
Kanichi Harima
Natsuo Tsubouchi
Yoshiharu Nakao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP10430675A priority Critical patent/JPS5228229A/en
Publication of JPS5228229A publication Critical patent/JPS5228229A/en
Publication of JPS572190B2 publication Critical patent/JPS572190B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:P-channel FAMOS memory transistor is formed at N-type first semiconductor district and transistor for controlling N-channel is formed at P-type second semiconductor district, to get nonvolatile memory enabled to perform high-speed motion.
JP10430675A 1975-08-28 1975-08-28 Semiconductor memory Granted JPS5228229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10430675A JPS5228229A (en) 1975-08-28 1975-08-28 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10430675A JPS5228229A (en) 1975-08-28 1975-08-28 Semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5228229A true JPS5228229A (en) 1977-03-03
JPS572190B2 JPS572190B2 (en) 1982-01-14

Family

ID=14377226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10430675A Granted JPS5228229A (en) 1975-08-28 1975-08-28 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5228229A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6329980A (en) * 1986-07-10 1988-02-08 エッセヂエッセ―トムソン　マイクロエレクトロニクス・エッセ・エッレ・エッレ Non-volatile semiconductor memory device
US5114870A (en) * 1979-05-25 1992-05-19 Hitachi, Ltd. Method for manufacturing field effect transistors
US5252505A (en) * 1979-05-25 1993-10-12 Hitachi, Ltd. Method for manufacturing a semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114870A (en) * 1979-05-25 1992-05-19 Hitachi, Ltd. Method for manufacturing field effect transistors
US5252505A (en) * 1979-05-25 1993-10-12 Hitachi, Ltd. Method for manufacturing a semiconductor device
JPS6329980A (en) * 1986-07-10 1988-02-08 エッセヂエッセ―トムソン　マイクロエレクトロニクス・エッセ・エッレ・エッレ Non-volatile semiconductor memory device

Also Published As

Publication number Publication date
JPS572190B2 (en) 1982-01-14

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