JPS51147928A - Non-volatile semiconductor memory - Google Patents

Non-volatile semiconductor memory

Info

Publication number
JPS51147928A
JPS51147928A JP7176375A JP7176375A JPS51147928A JP S51147928 A JPS51147928 A JP S51147928A JP 7176375 A JP7176375 A JP 7176375A JP 7176375 A JP7176375 A JP 7176375A JP S51147928 A JPS51147928 A JP S51147928A
Authority
JP
Japan
Prior art keywords
semiconductor memory
volatile semiconductor
diffused region
type diffused
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7176375A
Other languages
Japanese (ja)
Other versions
JPS586237B2 (en
Inventor
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7176375A priority Critical patent/JPS586237B2/en
Publication of JPS51147928A publication Critical patent/JPS51147928A/en
Publication of JPS586237B2 publication Critical patent/JPS586237B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Abstract

PURPOSE:To provide a N-channel non-volatile semiconductor memory having a high write-in speed by adding a P-type diffused region of high impurity concentration to a drain N-type diffused region in a partial contact relationship.
JP7176375A 1975-06-13 1975-06-13 Fukihatsuseihandoutaikiokusouchi Expired JPS586237B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7176375A JPS586237B2 (en) 1975-06-13 1975-06-13 Fukihatsuseihandoutaikiokusouchi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7176375A JPS586237B2 (en) 1975-06-13 1975-06-13 Fukihatsuseihandoutaikiokusouchi

Publications (2)

Publication Number Publication Date
JPS51147928A true JPS51147928A (en) 1976-12-18
JPS586237B2 JPS586237B2 (en) 1983-02-03

Family

ID=13469896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7176375A Expired JPS586237B2 (en) 1975-06-13 1975-06-13 Fukihatsuseihandoutaikiokusouchi

Country Status (1)

Country Link
JP (1) JPS586237B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105374A (en) * 1979-02-07 1980-08-12 Nec Corp Nonvolatile semiconductor memory
JPS6325980A (en) * 1986-07-17 1988-02-03 Nec Corp Nonvolatile semiconductor memory device and manufacture thereof
JPS6345862A (en) * 1986-08-13 1988-02-26 Res Dev Corp Of Japan Semiconductor nonvolatile memory
JPH033273A (en) * 1989-05-30 1991-01-09 Seiko Instr Inc Nonvolatile memory of semiconductor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105374A (en) * 1979-02-07 1980-08-12 Nec Corp Nonvolatile semiconductor memory
JPS6343902B2 (en) * 1979-02-07 1988-09-01 Nippon Electric Co
JPS6325980A (en) * 1986-07-17 1988-02-03 Nec Corp Nonvolatile semiconductor memory device and manufacture thereof
JPS6345862A (en) * 1986-08-13 1988-02-26 Res Dev Corp Of Japan Semiconductor nonvolatile memory
JPH0451072B2 (en) * 1986-08-13 1992-08-18 Shingijutsu Jigyodan
JPH033273A (en) * 1989-05-30 1991-01-09 Seiko Instr Inc Nonvolatile memory of semiconductor

Also Published As

Publication number Publication date
JPS586237B2 (en) 1983-02-03

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