JPS5236483A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5236483A
JPS5236483A JP50112923A JP11292375A JPS5236483A JP S5236483 A JPS5236483 A JP S5236483A JP 50112923 A JP50112923 A JP 50112923A JP 11292375 A JP11292375 A JP 11292375A JP S5236483 A JPS5236483 A JP S5236483A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
type
enhancing
isolations
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50112923A
Other languages
Japanese (ja)
Other versions
JPS5416398B2 (en
Inventor
Masakatsu Yoshida
Atsutomo Toi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP50112923A priority Critical patent/JPS5236483A/en
Publication of JPS5236483A publication Critical patent/JPS5236483A/en
Publication of JPS5416398B2 publication Critical patent/JPS5416398B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To provide n-channel double gates and conjunction type FETs of cascode structure in N-type isolations, thereby enhancing gm and reducing input return capacity.
JP50112923A 1975-09-17 1975-09-17 Semiconductor integrated circuit Granted JPS5236483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50112923A JPS5236483A (en) 1975-09-17 1975-09-17 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50112923A JPS5236483A (en) 1975-09-17 1975-09-17 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS5236483A true JPS5236483A (en) 1977-03-19
JPS5416398B2 JPS5416398B2 (en) 1979-06-21

Family

ID=14598862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50112923A Granted JPS5236483A (en) 1975-09-17 1975-09-17 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5236483A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462509U (en) * 1977-10-11 1979-05-01
JPS59167050A (en) * 1984-03-05 1984-09-20 Hitachi Ltd Semiconductor device
US4985738A (en) * 1978-01-06 1991-01-15 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JPH04180249A (en) * 1990-11-14 1992-06-26 Mitsubishi Electric Corp Integrated circuit
US5175598A (en) * 1978-01-06 1992-12-29 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5227647A (en) * 1978-01-06 1993-07-13 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JP2007302299A (en) * 2006-05-11 2007-11-22 Yuyama Manufacturing Co Ltd Vial bottle feeding device
US20170257025A1 (en) * 2016-03-04 2017-09-07 Infineon Technologies Ag Switched-Mode Power Converter with Cascode Circuit
US9985126B2 (en) 2016-03-04 2018-05-29 Infineon Technologies Ag Semiconductor device comprising a first gate electrode and a second gate electrode

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462509U (en) * 1977-10-11 1979-05-01
US4985738A (en) * 1978-01-06 1991-01-15 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5175598A (en) * 1978-01-06 1992-12-29 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5227647A (en) * 1978-01-06 1993-07-13 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JPS59167050A (en) * 1984-03-05 1984-09-20 Hitachi Ltd Semiconductor device
JPH04180249A (en) * 1990-11-14 1992-06-26 Mitsubishi Electric Corp Integrated circuit
JP2007302299A (en) * 2006-05-11 2007-11-22 Yuyama Manufacturing Co Ltd Vial bottle feeding device
US8047352B2 (en) 2006-05-11 2011-11-01 Yuyama Mfg. Co., Ltd. Vial supply device
US20170257025A1 (en) * 2016-03-04 2017-09-07 Infineon Technologies Ag Switched-Mode Power Converter with Cascode Circuit
US9985126B2 (en) 2016-03-04 2018-05-29 Infineon Technologies Ag Semiconductor device comprising a first gate electrode and a second gate electrode
US10128750B2 (en) * 2016-03-04 2018-11-13 Infineon Technologies Ag Switched-mode power converter with an inductive storage element and a cascode circuit

Also Published As

Publication number Publication date
JPS5416398B2 (en) 1979-06-21

Similar Documents

Publication Publication Date Title
JPS5236483A (en) Semiconductor integrated circuit
JPS5239354A (en) Drive circuit
JPS5352386A (en) Semiconductor integrated circuit
JPS5542332A (en) Memory circuit
JPS5267556A (en) High voltage proof mis switching circuit
JPS5353281A (en) Semiconductor integrating circuit
JPS5313852A (en) Level conversion circuit
GB1259237A (en)
JPS52116129A (en) Logical circuit
JPS539457A (en) Complementary mos lsi circuit
JPS56140719A (en) Semiconductor circuit
JPS5413759A (en) Logic circuit using complementary mis transistor
JPS5429531A (en) Sense circuit for cmos static random access memory
JPS5441027A (en) Memory output circuit
JPS531412A (en) Mixer circuit
JPS56147236A (en) Adding circuit
JPS5233435A (en) Memory unit
JPS5220777A (en) Semi-conductor unit
JPS51113577A (en) Bipolar semi-conductor integrated circuit
JPS5368047A (en) Input signal buffer circuit
JPS5373961A (en) Logic circuit
JPS54968A (en) Logic circuit
JPS55101190A (en) Semiconductor memory device
JPS52119132A (en) Mos dynamic memory
JPS53102654A (en) Non-volatile flip flop circuit