JPS5220777A - Semi-conductor unit - Google Patents
Semi-conductor unitInfo
- Publication number
- JPS5220777A JPS5220777A JP50096784A JP9678475A JPS5220777A JP S5220777 A JPS5220777 A JP S5220777A JP 50096784 A JP50096784 A JP 50096784A JP 9678475 A JP9678475 A JP 9678475A JP S5220777 A JPS5220777 A JP S5220777A
- Authority
- JP
- Japan
- Prior art keywords
- semi
- conductor unit
- amplification rate
- current amplification
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003321 amplification Effects 0.000 abstract 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:Improvement of the current amplification rate of the power and load transistors to reduce the power consumption, and of the bi-directional transistor current amplification rate of the inverter element to prevent the current hogging for the realization of high speed high frequency elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50096784A JPS584824B2 (en) | 1975-08-09 | 1975-08-09 | Hand tie souchi |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50096784A JPS584824B2 (en) | 1975-08-09 | 1975-08-09 | Hand tie souchi |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5220777A true JPS5220777A (en) | 1977-02-16 |
JPS584824B2 JPS584824B2 (en) | 1983-01-27 |
Family
ID=14174248
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50096784A Expired JPS584824B2 (en) | 1975-08-09 | 1975-08-09 | Hand tie souchi |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS584824B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1060998C (en) * | 1994-09-28 | 2001-01-24 | 松下电器产业株式会社 | Hollow structural member and method for making same |
-
1975
- 1975-08-09 JP JP50096784A patent/JPS584824B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1060998C (en) * | 1994-09-28 | 2001-01-24 | 松下电器产业株式会社 | Hollow structural member and method for making same |
Also Published As
Publication number | Publication date |
---|---|
JPS584824B2 (en) | 1983-01-27 |
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