DE60109520D1 - Halbleiterphotodetektor und sein Herstellungsverfahren - Google Patents

Halbleiterphotodetektor und sein Herstellungsverfahren

Info

Publication number
DE60109520D1
DE60109520D1 DE60109520T DE60109520T DE60109520D1 DE 60109520 D1 DE60109520 D1 DE 60109520D1 DE 60109520 T DE60109520 T DE 60109520T DE 60109520 T DE60109520 T DE 60109520T DE 60109520 D1 DE60109520 D1 DE 60109520D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor photodetector
photodetector
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60109520T
Other languages
English (en)
Other versions
DE60109520T2 (de
Inventor
Toru Uchida
Chikashi Anayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Device Innovations Inc
Original Assignee
Fujitsu Quantum Devices Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Quantum Devices Ltd filed Critical Fujitsu Quantum Devices Ltd
Publication of DE60109520D1 publication Critical patent/DE60109520D1/de
Application granted granted Critical
Publication of DE60109520T2 publication Critical patent/DE60109520T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035263—Doping superlattices, e.g. nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Light Receiving Elements (AREA)
  • Chemical Vapour Deposition (AREA)
DE60109520T 2000-06-06 2001-06-06 Halbleiterphotodetektor und sein Herstellungsverfahren Expired - Fee Related DE60109520T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000169448 2000-06-06
JP2000169448 2000-06-06
JP2000301489 2000-09-29
JP2000301489A JP3652977B2 (ja) 2000-06-06 2000-09-29 半導体受光装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE60109520D1 true DE60109520D1 (de) 2005-04-28
DE60109520T2 DE60109520T2 (de) 2005-09-29

Family

ID=26593424

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60109520T Expired - Fee Related DE60109520T2 (de) 2000-06-06 2001-06-06 Halbleiterphotodetektor und sein Herstellungsverfahren

Country Status (4)

Country Link
US (1) US7081639B2 (de)
EP (1) EP1162667B1 (de)
JP (1) JP3652977B2 (de)
DE (1) DE60109520T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4030847B2 (ja) * 2002-09-20 2008-01-09 ユーディナデバイス株式会社 半導体受光装置
JP4625639B2 (ja) * 2003-01-17 2011-02-02 富士フイルム株式会社 光変調素子、光変調素子アレイ、画像形成装置、及び平面表示装置
US7233029B2 (en) * 2003-01-17 2007-06-19 Fujifilm Corporation Optical functional film, method of forming the same, and spatial light modulator, spatial light modulator array, image forming device and flat panel display using the same
WO2011008979A2 (en) * 2009-07-17 2011-01-20 Lockheed Martin Corporation Strain-balanced extended-wavelength barrier detector
JP2011035114A (ja) * 2009-07-31 2011-02-17 Renesas Electronics Corp メサ型フォトダイオード及びその製造方法
JP5414415B2 (ja) * 2009-08-06 2014-02-12 株式会社日立製作所 半導体受光素子及びその製造方法
JP2012174977A (ja) * 2011-02-23 2012-09-10 Sumitomo Electric Ind Ltd 受光素子およびその製造方法
GB201410317D0 (en) * 2014-06-10 2014-07-23 Spts Technologies Ltd Substrate
RU2660415C1 (ru) * 2017-07-25 2018-07-06 Федеральное государственное бюджетное учреждение науки Физико-технический институт им. А.Ф. Иоффе Российской академии наук СПОСОБ ИЗГОТОВЛЕНИЯ ГЕТЕРОСТРУКТУРЫ InGaAsP/InP ФОТОПРЕОБРАЗОВАТЕЛЯ
WO2022118643A1 (ja) * 2020-12-04 2022-06-09 浜松ホトニクス株式会社 半導体受光素子

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4607272A (en) 1983-10-06 1986-08-19 The United States Of America As Represented By The United States Department Of Energy Electro-optical SLS devices for operating at new wavelength ranges
JPS6235682A (ja) 1985-08-09 1987-02-16 Nec Corp 受光素子
JP2747299B2 (ja) * 1988-09-28 1998-05-06 株式会社日立製作所 半導体受光素子
US4952792A (en) 1989-10-13 1990-08-28 At&T Bell Laboratories Devices employing internally strained asymmetric quantum wells
US5093695A (en) 1990-05-18 1992-03-03 At&T Bell Laboratories Controllable semiconductor modulator having interleaved contacts
JP2911546B2 (ja) 1990-06-06 1999-06-23 富士通株式会社 光半導体装置及びその製造方法
JPH04212129A (ja) 1990-07-03 1992-08-03 Fujitsu Ltd 光半導体装置
DE69229369T2 (de) * 1991-03-28 2000-01-27 Nec Corp., Tokio/Tokyo Halbleiterphotodetektor mit Lawinenmultiplikation
JPH0521829A (ja) * 1991-07-12 1993-01-29 Hitachi Ltd 半導体装置
US5313073A (en) * 1992-08-06 1994-05-17 University Of Southern California Light detector using intersub-valence band transitions with strained barriers
JPH06140624A (ja) 1992-10-22 1994-05-20 Furukawa Electric Co Ltd:The ショットキー接合素子
JPH06188449A (ja) 1992-12-21 1994-07-08 Furukawa Electric Co Ltd:The Ｍｓｍ型受光素子
EP0627771B1 (de) 1992-12-21 1999-07-21 The Furukawa Electric Co., Ltd. Halbleiter-photodetektor mit verformter uebergitter und mit einer seitenkontaktstruktur
JPH06296037A (ja) 1993-04-07 1994-10-21 Furukawa Electric Co Ltd:The 半導体受光素子
JPH0774381A (ja) 1993-09-01 1995-03-17 Mitsubishi Electric Corp 半導体受光素子
US5412225A (en) * 1994-02-18 1995-05-02 The United States Of America As Represented By The Secretary Of The Army Tunable heavy and light hole coupled bands in variable-strain quantum well semi-conductor heterostructure for novel opto-electronic devices
DE69428187T2 (de) * 1994-05-06 2002-06-20 Commissariat A L'energie Atomique, Paris Optisch gesteuerte Lichtmodulator-Vorrichtung
JPH08316588A (ja) * 1995-05-23 1996-11-29 Furukawa Electric Co Ltd:The 歪量子井戸構造を有する半導体光素子
JPH09318918A (ja) * 1996-05-29 1997-12-12 Nec Corp 半導体光変調器
US6229152B1 (en) * 1999-02-18 2001-05-08 The Trustees Of Princeton University Strain compensated indium galium arsenide quantum well photoconductors with high indium content extended wavelength operation
US6222200B1 (en) * 1999-04-19 2001-04-24 Nortel Networks Limited Photodetector with spectrally extended responsivity

Also Published As

Publication number Publication date
JP3652977B2 (ja) 2005-05-25
EP1162667A1 (de) 2001-12-12
US7081639B2 (en) 2006-07-25
US20010048118A1 (en) 2001-12-06
JP2002064217A (ja) 2002-02-28
DE60109520T2 (de) 2005-09-29
EP1162667B1 (de) 2005-03-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: EUDYNA DEVICES INC., YAMANASHI, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE

8339 Ceased/non-payment of the annual fee