DE4324855C1 - Ladungspumpe - Google Patents

Ladungspumpe

Info

Publication number
DE4324855C1
DE4324855C1 DE4324855A DE4324855A DE4324855C1 DE 4324855 C1 DE4324855 C1 DE 4324855C1 DE 4324855 A DE4324855 A DE 4324855A DE 4324855 A DE4324855 A DE 4324855A DE 4324855 C1 DE4324855 C1 DE 4324855C1
Authority
DE
Germany
Prior art keywords
mos transistor
charge pump
channel mos
signal
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4324855A
Other languages
German (de)
English (en)
Inventor
Dieter Dr Ing Gleis
Manfred Menke
Dominique Dr Savignac
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE4324855A priority Critical patent/DE4324855C1/de
Priority to TW083102047A priority patent/TW250585B/zh
Priority to EP94109984A priority patent/EP0635837B1/de
Priority to DE59408267T priority patent/DE59408267D1/de
Priority to AT94109984T priority patent/ATE180355T1/de
Priority to JP18664194A priority patent/JP3920362B2/ja
Priority to KR1019940017747A priority patent/KR100298159B1/ko
Priority to US08/279,919 priority patent/US5546296A/en
Application granted granted Critical
Publication of DE4324855C1 publication Critical patent/DE4324855C1/de
Priority to HK98102835A priority patent/HK1003738A1/xx
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Dram (AREA)
  • Control Of The Air-Fuel Ratio Of Carburetors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
DE4324855A 1993-07-23 1993-07-23 Ladungspumpe Expired - Fee Related DE4324855C1 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE4324855A DE4324855C1 (de) 1993-07-23 1993-07-23 Ladungspumpe
TW083102047A TW250585B (zh) 1993-07-23 1994-03-09
DE59408267T DE59408267D1 (de) 1993-07-23 1994-06-28 Ladungspumpe
AT94109984T ATE180355T1 (de) 1993-07-23 1994-06-28 Ladungspumpe
EP94109984A EP0635837B1 (de) 1993-07-23 1994-06-28 Ladungspumpe
JP18664194A JP3920362B2 (ja) 1993-07-23 1994-07-15 電荷ポンプ
KR1019940017747A KR100298159B1 (ko) 1993-07-23 1994-07-22 충전펌프
US08/279,919 US5546296A (en) 1993-07-23 1994-07-25 Charge pump
HK98102835A HK1003738A1 (en) 1993-07-23 1998-04-03 Charge pump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4324855A DE4324855C1 (de) 1993-07-23 1993-07-23 Ladungspumpe

Publications (1)

Publication Number Publication Date
DE4324855C1 true DE4324855C1 (de) 1994-09-22

Family

ID=6493604

Family Applications (2)

Application Number Title Priority Date Filing Date
DE4324855A Expired - Fee Related DE4324855C1 (de) 1993-07-23 1993-07-23 Ladungspumpe
DE59408267T Expired - Lifetime DE59408267D1 (de) 1993-07-23 1994-06-28 Ladungspumpe

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59408267T Expired - Lifetime DE59408267D1 (de) 1993-07-23 1994-06-28 Ladungspumpe

Country Status (8)

Country Link
US (1) US5546296A (zh)
EP (1) EP0635837B1 (zh)
JP (1) JP3920362B2 (zh)
KR (1) KR100298159B1 (zh)
AT (1) ATE180355T1 (zh)
DE (2) DE4324855C1 (zh)
HK (1) HK1003738A1 (zh)
TW (1) TW250585B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2758021A1 (fr) * 1996-12-31 1998-07-03 Sgs Thomson Microelectronics Circuit elevateur de tension
DE19748577C1 (de) * 1997-11-04 1999-01-21 Bosch Gmbh Robert Ladungspumpe

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69518826T2 (de) * 1995-04-14 2001-02-22 St Microelectronics Srl Spannungserhöhungsschaltung zur Erzeugung eines annähernd konstanten Spannungspegels
JP3173327B2 (ja) * 1995-06-16 2001-06-04 富士通株式会社 半導体装置
KR0179852B1 (ko) * 1995-10-25 1999-04-15 문정환 차지 펌프 회로
EP0784373B1 (en) * 1996-01-15 2001-05-16 Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe High-efficiency voltage booster circuit operating at very low supply voltage
US5668710A (en) * 1996-07-03 1997-09-16 Telcom Semiconductor, Inc. Charge pump circuit having independent inverted and non-inverted terminals
US6064250A (en) 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit
DE19651768C1 (de) * 1996-12-12 1998-02-19 Siemens Ag Schaltungsanordnung zur Erzeugung einer erhöhten Ausgangsspannung
US5818766A (en) * 1997-03-05 1998-10-06 Integrated Silicon Solution Inc. Drain voltage pump circuit for nonvolatile memory device
DE19924568B4 (de) * 1999-05-28 2014-05-22 Qimonda Ag Ladungspumpe
US6965219B2 (en) * 2002-06-28 2005-11-15 Microsemi Corporation Method and apparatus for auto-interleaving synchronization in a multiphase switching power converter
JP2004166820A (ja) 2002-11-18 2004-06-17 Aruze Corp 遊技機
US7207883B2 (en) * 2002-11-19 2007-04-24 Aruze Corporation Gaming machine
ZA200308997B (en) 2002-11-20 2005-08-31 Universal Entertainment Corp Gaming machine and display device therefor
US8096867B2 (en) 2002-11-20 2012-01-17 Universal Entertainment Corporation Gaming machine and display device with fail-tolerant image displaying
JP2004166964A (ja) * 2002-11-20 2004-06-17 Aruze Corp 遊技機
JP2004166961A (ja) * 2002-11-20 2004-06-17 Aruze Corp 遊技機
JP2004166962A (ja) 2002-11-20 2004-06-17 Aruze Corp 遊技機
JP2004166959A (ja) 2002-11-20 2004-06-17 Aruze Corp 遊技機
JP2004166963A (ja) 2002-11-20 2004-06-17 Aruze Corp 遊技機
US7892094B2 (en) 2003-05-14 2011-02-22 Universal Entertainment Corporation Gaming machine with a light guiding plate subjected to a light scattering process and having a light deflection pattern
US20050077950A1 (en) * 2003-10-14 2005-04-14 Robinson Curtis B. Negative charge pump
FR2864271B1 (fr) * 2003-12-19 2006-03-03 Atmel Corp Circuit de pompe a charge a rendement eleve, a faible cout
US8231464B2 (en) 2005-12-19 2012-07-31 Wms Gaming Inc. Multigame gaming machine with transmissive display
US7855591B2 (en) * 2006-06-07 2010-12-21 Atmel Corporation Method and system for providing a charge pump very low voltage applications
JP2008017945A (ja) 2006-07-11 2008-01-31 Aruze Corp 遊技機、及び、遊技制御方法
US7652522B2 (en) * 2006-09-05 2010-01-26 Atmel Corporation High efficiency low cost bi-directional charge pump circuit for very low voltage applications
CN101689801A (zh) * 2007-06-13 2010-03-31 半导体元件工业有限责任公司 电荷泵控制器及其方法
US8172666B2 (en) 2008-04-01 2012-05-08 Aruze Gaming America, Inc. Slot machine
KR20100138146A (ko) * 2009-06-24 2010-12-31 삼성전자주식회사 고효율의 차지 펌프
US9300283B1 (en) 2015-02-18 2016-03-29 Freescale Semiconductor,Inc. Single capacitor, low leakage charge pump
CN106849646B (zh) * 2017-03-30 2019-09-10 中国人民解放军国防科学技术大学 一种具有抗辐照特性的低抖动电荷泵

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500799A (en) * 1980-07-28 1985-02-19 Inmos Corporation Bootstrap driver circuits for an MOS memory
EP0126788B1 (de) * 1983-05-27 1987-06-03 Deutsche ITT Industries GmbH MOS-Bootstrap-Gegentaktstufe
JP2752640B2 (ja) * 1988-08-07 1998-05-18 日本電気アイシーマイコンシステム株式会社 中間レベル発生回路
DE3904910A1 (de) * 1989-02-17 1990-08-23 Texas Instruments Deutschland Integrierte gegentakt-ausgangsstufe
US5264743A (en) * 1989-12-08 1993-11-23 Hitachi, Ltd. Semiconductor memory operating with low supply voltage
JPH0812754B2 (ja) * 1990-08-20 1996-02-07 富士通株式会社 昇圧回路
DE4128290C1 (zh) * 1991-08-27 1992-12-03 Samsung Electronics Co., Ltd., Suwon, Kr

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NAKAGOME, Y. et al: "An Experimental 1.SV 64 116 DRAM". In: IEEE Journal of Solid State Circuits, Vol. 26, No. 4, April 1991 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2758021A1 (fr) * 1996-12-31 1998-07-03 Sgs Thomson Microelectronics Circuit elevateur de tension
DE19748577C1 (de) * 1997-11-04 1999-01-21 Bosch Gmbh Robert Ladungspumpe
FR2770698A1 (fr) * 1997-11-04 1999-05-07 Bosch Gmbh Robert Pompe de charge pour generer une surtension

Also Published As

Publication number Publication date
JPH0757462A (ja) 1995-03-03
KR100298159B1 (ko) 2001-10-24
US5546296A (en) 1996-08-13
KR950004265A (ko) 1995-02-17
EP0635837B1 (de) 1999-05-19
DE59408267D1 (de) 1999-06-24
EP0635837A2 (de) 1995-01-25
ATE180355T1 (de) 1999-06-15
HK1003738A1 (en) 1998-11-06
EP0635837A3 (de) 1996-10-30
TW250585B (zh) 1995-07-01
JP3920362B2 (ja) 2007-05-30

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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee