DE3783569T2 - Halbleiterspeicher zur ausfuehrung einer selbstauffrischungsoperation. - Google Patents

Halbleiterspeicher zur ausfuehrung einer selbstauffrischungsoperation.

Info

Publication number
DE3783569T2
DE3783569T2 DE8787309863T DE3783569T DE3783569T2 DE 3783569 T2 DE3783569 T2 DE 3783569T2 DE 8787309863 T DE8787309863 T DE 8787309863T DE 3783569 T DE3783569 T DE 3783569T DE 3783569 T2 DE3783569 T2 DE 3783569T2
Authority
DE
Germany
Prior art keywords
self
carrying
semiconductor memory
refreshing operation
refreshing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787309863T
Other languages
English (en)
Other versions
DE3783569D1 (de
Inventor
Takeo Esuperansa Dai Tatematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3783569D1 publication Critical patent/DE3783569D1/de
Application granted granted Critical
Publication of DE3783569T2 publication Critical patent/DE3783569T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE8787309863T 1986-11-07 1987-11-06 Halbleiterspeicher zur ausfuehrung einer selbstauffrischungsoperation. Expired - Fee Related DE3783569T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61265372A JPS63121197A (ja) 1986-11-07 1986-11-07 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3783569D1 DE3783569D1 (de) 1993-02-25
DE3783569T2 true DE3783569T2 (de) 1993-05-13

Family

ID=17416264

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787309863T Expired - Fee Related DE3783569T2 (de) 1986-11-07 1987-11-06 Halbleiterspeicher zur ausfuehrung einer selbstauffrischungsoperation.

Country Status (4)

Country Link
US (1) US4982369A (de)
EP (1) EP0267052B1 (de)
JP (1) JPS63121197A (de)
DE (1) DE3783569T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2239539B (en) * 1989-11-18 1994-05-18 Active Book Co Ltd Method of refreshing memory devices
JP2827361B2 (ja) * 1989-12-04 1998-11-25 日本電気株式会社 半導体メモリ装置
KR920022293A (ko) * 1991-05-16 1992-12-19 김광호 비정기적인 리프레쉬 동작을 실행하는 반도체 메모리 장치
US5335202A (en) * 1993-06-29 1994-08-02 Micron Semiconductor, Inc. Verifying dynamic memory refresh
US5392251A (en) * 1993-07-13 1995-02-21 Micron Semiconductor, Inc. Controlling dynamic memory refresh cycle time
JPH07182857A (ja) * 1993-12-24 1995-07-21 Toshiba Corp マイコンシステム
KR0129197B1 (ko) * 1994-04-21 1998-10-01 문정환 메모리셀어레이의 리플레쉬 제어회로
US5455801A (en) * 1994-07-15 1995-10-03 Micron Semiconductor, Inc. Circuit having a control array of memory cells and a current source and a method for generating a self-refresh timing signal
US5890198A (en) * 1996-10-22 1999-03-30 Micron Technology, Inc. Intelligent refresh controller for dynamic memory devices
JPH10178108A (ja) * 1996-12-19 1998-06-30 Mitsubishi Electric Corp 半導体記憶装置
KR100363103B1 (ko) * 1998-10-20 2003-02-19 주식회사 하이닉스반도체 셀프 리프레쉬 발진기
US6366516B1 (en) * 2000-12-29 2002-04-02 Intel Corporation Memory subsystem employing pool of refresh candidates
US6483764B2 (en) * 2001-01-16 2002-11-19 International Business Machines Corporation Dynamic DRAM refresh rate adjustment based on cell leakage monitoring
KR100413484B1 (ko) * 2001-06-28 2003-12-31 주식회사 하이닉스반도체 반도체 메모리 장치의 리프레쉬 회로
US6714473B1 (en) * 2001-11-30 2004-03-30 Cypress Semiconductor Corp. Method and architecture for refreshing a 1T memory proportional to temperature
US7975170B2 (en) * 2007-06-15 2011-07-05 Qimonda Ag Memory refresh system and method
US9159396B2 (en) * 2011-06-30 2015-10-13 Lattice Semiconductor Corporation Mechanism for facilitating fine-grained self-refresh control for dynamic memory devices
KR102373544B1 (ko) 2015-11-06 2022-03-11 삼성전자주식회사 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법
KR20210004611A (ko) * 2019-07-05 2021-01-13 에스케이하이닉스 주식회사 메모리 인터페이스, 이를 포함하는 데이터 저장 장치 및 그 동작 방법
TWI731783B (zh) * 2020-09-03 2021-06-21 華邦電子股份有限公司 半導體記憶裝置
US11682444B2 (en) * 2021-09-29 2023-06-20 Lenovo Golbal Technology (United States) Inc. Dynamic random-access memory array including sensor cells

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125662A (en) * 1979-03-22 1980-09-27 Fujitsu Ltd Semiconductor integrated circuit
JPS55150191A (en) * 1979-05-08 1980-11-21 Nec Corp Information refreshing method of semiconductor integrated circuit
US4360903A (en) * 1980-09-10 1982-11-23 Mostek Corporation Clocking system for a self-refreshed dynamic memory
IE55327B1 (en) * 1981-12-29 1990-08-15 Fujitsu Ltd Nonvolatile semiconductor memory circuit
JPS5956291A (ja) * 1982-09-24 1984-03-31 Hitachi Ltd Ｍｏｓ記憶装置
JPS6061990A (ja) * 1983-09-14 1985-04-09 Nec Corp タイマ−回路
JPS6083293A (ja) * 1983-10-14 1985-05-11 Hitachi Micro Comput Eng Ltd ダイナミツク型ｒａｍ
JPS60191499A (ja) * 1984-03-09 1985-09-28 Toshiba Corp ダイナミツク型ランダムアクセスメモリ
JPS60212896A (ja) * 1984-04-06 1985-10-25 Hitachi Micro Comput Eng Ltd ダイナミツク型ｒａｍ
JPS6150287A (ja) * 1984-08-20 1986-03-12 Toshiba Corp ダイナミツクメモリの自動リフレツシユ制御回路
JPS62129997A (ja) * 1985-11-13 1987-06-12 Mitsubishi Electric Corp ダイナミツクｒａｍ
JPS63155494A (ja) * 1986-12-19 1988-06-28 Fujitsu Ltd 擬似スタテイツクメモリ装置

Also Published As

Publication number Publication date
DE3783569D1 (de) 1993-02-25
EP0267052A2 (de) 1988-05-11
JPS63121197A (ja) 1988-05-25
US4982369A (en) 1991-01-01
EP0267052A3 (en) 1989-10-18
EP0267052B1 (de) 1993-01-13

Similar Documents

Publication Publication Date Title
DE3783569T2 (de) Halbleiterspeicher zur ausfuehrung einer selbstauffrischungsoperation.
DE3751002T2 (de) Halbleiterspeicher.
DE3778439D1 (de) Halbleiterspeicheranordnung.
DE3778067D1 (de) Zweitor-halbleiterspeicheranordnung.
DE3788747D1 (de) Halbleiterspeicher.
DE3686994T2 (de) Halbleiterspeicher.
DE3785509T2 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3770953D1 (de) Halbleiterspeichervorrichtungen.
DE3786819D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3767579D1 (de) Nichtfluechtige halbleiter-speichereinrichtung.
DE3772137D1 (de) Halbleiter-speicheranordnung.
DE3771238D1 (de) Halbleiterspeicher.
DE3778408D1 (de) Halbleiterspeicheranordnung.
DE3787616D1 (de) Halbleiterspeicheranordnung.
DE3783666D1 (de) Halbleiterspeicheranordnung.
DE3575225D1 (de) Halbleiterspeicheranordnung.
DE3887823D1 (de) Halbleiterspeicher.
DE3783493T2 (de) Halbleiterspeicheranordnung.
DE3789783D1 (de) Halbleiterspeicheranordnung.
DE3586736T2 (de) Halbleiterspeicher.
DE3587457D1 (de) Halbleiterspeichereinrichtung.
DE3774369D1 (de) Halbleiter-speicheranordnung.
DE3771243D1 (de) Halbleiterspeicheranordnung.
DE3778601D1 (de) Nichtfluechtige halbleiterspeicheranordnung.
DE3780492T2 (de) Halbleiterspeicheranordnung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee