JPS55150191A - Information refreshing method of semiconductor integrated circuit - Google Patents

Information refreshing method of semiconductor integrated circuit

Info

Publication number
JPS55150191A
JPS55150191A JP5614779A JP5614779A JPS55150191A JP S55150191 A JPS55150191 A JP S55150191A JP 5614779 A JP5614779 A JP 5614779A JP 5614779 A JP5614779 A JP 5614779A JP S55150191 A JPS55150191 A JP S55150191A
Authority
JP
Japan
Prior art keywords
refreshing
potential
refresh
signal
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5614779A
Other languages
Japanese (ja)
Inventor
Yuji Okuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5614779A priority Critical patent/JPS55150191A/en
Publication of JPS55150191A publication Critical patent/JPS55150191A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To lessen an unusable time of a dynamic memory, etc., by constantly monitoring a reference cell formed on the same semiconductor substrate and by refreshing when its refresh signal and a refresh enable signal from a semiconductor integrated circuit are both generated at a time. CONSTITUTION:A reference element is represented by capacitor C and its information holding state is decided by a potential at node 1. A potential at node 2 is a refresh request signal. After refreshing, transistors T1 and T2 are OFF and ON respectively and potentials at nodes 1 and 2 are Vs and low respectively. Even when a semiconductor integrated circuit is placed in a refresh enable state, transistor T6 is OFF and terminal R is held at a high potential. When node 1 decreases in potential as time passes, T2 turns OFF to turn T6 ON and once a refresh signal holding terminal T arrives at a high potential, refreshing comes into effect. Simultaneously, a signal is sent to terminal G and the reference element is also refreshed. Therefore, the unusable time due to refreshing is lessened.
JP5614779A 1979-05-08 1979-05-08 Information refreshing method of semiconductor integrated circuit Pending JPS55150191A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5614779A JPS55150191A (en) 1979-05-08 1979-05-08 Information refreshing method of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5614779A JPS55150191A (en) 1979-05-08 1979-05-08 Information refreshing method of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS55150191A true JPS55150191A (en) 1980-11-21

Family

ID=13018964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5614779A Pending JPS55150191A (en) 1979-05-08 1979-05-08 Information refreshing method of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS55150191A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132299A (en) * 1984-07-24 1986-02-14 Seiko Epson Corp Semiconductor memory
US4982369A (en) * 1986-11-07 1991-01-01 Fujitsu Limited Self-refresh semiconductor memory device responsive to a refresh request signal
US5392251A (en) * 1993-07-13 1995-02-21 Micron Semiconductor, Inc. Controlling dynamic memory refresh cycle time
US5394373A (en) * 1990-11-16 1995-02-28 Fujitsu Limited Semiconductor memory having a high-speed address decoder

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365631A (en) * 1976-11-24 1978-06-12 Fujitsu Ltd Data processor
JPS5391638A (en) * 1977-01-24 1978-08-11 Nec Corp Semiconductor temporal memory unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5365631A (en) * 1976-11-24 1978-06-12 Fujitsu Ltd Data processor
JPS5391638A (en) * 1977-01-24 1978-08-11 Nec Corp Semiconductor temporal memory unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6132299A (en) * 1984-07-24 1986-02-14 Seiko Epson Corp Semiconductor memory
US4982369A (en) * 1986-11-07 1991-01-01 Fujitsu Limited Self-refresh semiconductor memory device responsive to a refresh request signal
US5394373A (en) * 1990-11-16 1995-02-28 Fujitsu Limited Semiconductor memory having a high-speed address decoder
US5392251A (en) * 1993-07-13 1995-02-21 Micron Semiconductor, Inc. Controlling dynamic memory refresh cycle time
US5539703A (en) * 1993-07-13 1996-07-23 Micron Technology, Inc. Dynamic memory device including apparatus for controlling refresh cycle time

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