JPS5391638A - Semiconductor temporal memory unit - Google Patents

Semiconductor temporal memory unit

Info

Publication number
JPS5391638A
JPS5391638A JP657077A JP657077A JPS5391638A JP S5391638 A JPS5391638 A JP S5391638A JP 657077 A JP657077 A JP 657077A JP 657077 A JP657077 A JP 657077A JP S5391638 A JPS5391638 A JP S5391638A
Authority
JP
Japan
Prior art keywords
semiconductor
memory unit
temporal memory
temporal
refreshes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP657077A
Other languages
Japanese (ja)
Other versions
JPS608555B2 (en
Inventor
Isamu Miyagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP52006570A priority Critical patent/JPS608555B2/en
Publication of JPS5391638A publication Critical patent/JPS5391638A/en
Publication of JPS608555B2 publication Critical patent/JPS608555B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To decrease the number of refreshes and to reduce the power consumption, by making the refresh period approximately equal to the temporal memory hold time of the capacitor memory element.
JP52006570A 1977-01-24 1977-01-24 semiconductor temporary storage device Expired JPS608555B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52006570A JPS608555B2 (en) 1977-01-24 1977-01-24 semiconductor temporary storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52006570A JPS608555B2 (en) 1977-01-24 1977-01-24 semiconductor temporary storage device

Publications (2)

Publication Number Publication Date
JPS5391638A true JPS5391638A (en) 1978-08-11
JPS608555B2 JPS608555B2 (en) 1985-03-04

Family

ID=11641985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52006570A Expired JPS608555B2 (en) 1977-01-24 1977-01-24 semiconductor temporary storage device

Country Status (1)

Country Link
JP (1) JPS608555B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5597090A (en) * 1978-12-27 1980-07-23 Cii Method of and device for writing control character in memory having charge storing cells
JPS55150191A (en) * 1979-05-08 1980-11-21 Nec Corp Information refreshing method of semiconductor integrated circuit
JPS6083293A (en) * 1983-10-14 1985-05-11 Hitachi Micro Comput Eng Ltd Dynamic ram
JPS60234298A (en) * 1984-05-07 1985-11-20 Hitachi Ltd Semiconductor integrated circuit
JPS62125594A (en) * 1985-11-26 1987-06-06 Toshiba Corp Refresh control circuit

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5597090A (en) * 1978-12-27 1980-07-23 Cii Method of and device for writing control character in memory having charge storing cells
JPH0338679B2 (en) * 1978-12-27 1991-06-11 Bull Sa
JPS55150191A (en) * 1979-05-08 1980-11-21 Nec Corp Information refreshing method of semiconductor integrated circuit
JPS6083293A (en) * 1983-10-14 1985-05-11 Hitachi Micro Comput Eng Ltd Dynamic ram
JPH0459714B2 (en) * 1983-10-14 1992-09-24 Hitachi Maikon Shisutemu Kk
JPS60234298A (en) * 1984-05-07 1985-11-20 Hitachi Ltd Semiconductor integrated circuit
JPS62125594A (en) * 1985-11-26 1987-06-06 Toshiba Corp Refresh control circuit
JPH0520836B2 (en) * 1985-11-26 1993-03-22 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS608555B2 (en) 1985-03-04

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