JPS5282141A - Refresh driving system - Google Patents

Refresh driving system

Info

Publication number
JPS5282141A
JPS5282141A JP15897775A JP15897775A JPS5282141A JP S5282141 A JPS5282141 A JP S5282141A JP 15897775 A JP15897775 A JP 15897775A JP 15897775 A JP15897775 A JP 15897775A JP S5282141 A JPS5282141 A JP S5282141A
Authority
JP
Japan
Prior art keywords
driving system
refresh driving
memory access
refresh
mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15897775A
Other languages
Japanese (ja)
Inventor
Haruyuki Yoshino
Fumio Tsuzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15897775A priority Critical patent/JPS5282141A/en
Publication of JPS5282141A publication Critical patent/JPS5282141A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To shorten the memory access wait time as well as to increase refresh security effect through refresh operation by switching burst mode and cycle still mode in accordance with memory access.
JP15897775A 1975-12-29 1975-12-29 Refresh driving system Pending JPS5282141A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15897775A JPS5282141A (en) 1975-12-29 1975-12-29 Refresh driving system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15897775A JPS5282141A (en) 1975-12-29 1975-12-29 Refresh driving system

Publications (1)

Publication Number Publication Date
JPS5282141A true JPS5282141A (en) 1977-07-09

Family

ID=15683501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15897775A Pending JPS5282141A (en) 1975-12-29 1975-12-29 Refresh driving system

Country Status (1)

Country Link
JP (1) JPS5282141A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0337891A (en) * 1989-07-03 1991-02-19 Mitsubishi Electric Corp Refresh circuit for dynamic semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0337891A (en) * 1989-07-03 1991-02-19 Mitsubishi Electric Corp Refresh circuit for dynamic semiconductor memory device

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