DE3525418A1 - Halbleiterspeichereinrichtung und verfahren zu ihrer herstellung - Google Patents

Halbleiterspeichereinrichtung und verfahren zu ihrer herstellung

Info

Publication number
DE3525418A1
DE3525418A1 DE19853525418 DE3525418A DE3525418A1 DE 3525418 A1 DE3525418 A1 DE 3525418A1 DE 19853525418 DE19853525418 DE 19853525418 DE 3525418 A DE3525418 A DE 3525418A DE 3525418 A1 DE3525418 A1 DE 3525418A1
Authority
DE
Germany
Prior art keywords
layer
conductivity type
zone
forming
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853525418
Other languages
German (de)
English (en)
Other versions
DE3525418C2 (https=
Inventor
Kazushige Atsugi Kanagawa Minegishi
Kenji Isehara Kanagawa Miura
Takashi Morie
Shigeru Chigasaki Kanagawa Nakajima
Toshifumi Zama Kanagawa Somatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59143230A external-priority patent/JPS6123360A/ja
Priority claimed from JP60110128A external-priority patent/JPH0793367B2/ja
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE3525418A1 publication Critical patent/DE3525418A1/de
Application granted granted Critical
Publication of DE3525418C2 publication Critical patent/DE3525418C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE19853525418 1984-07-12 1985-07-12 Halbleiterspeichereinrichtung und verfahren zu ihrer herstellung Granted DE3525418A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP59143230A JPS6123360A (ja) 1984-07-12 1984-07-12 半導体記憶装置およびその製造方法
JP60110128A JPH0793367B2 (ja) 1985-05-24 1985-05-24 半導体記憶装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE3525418A1 true DE3525418A1 (de) 1986-01-16
DE3525418C2 DE3525418C2 (https=) 1991-02-07

Family

ID=26449807

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853525418 Granted DE3525418A1 (de) 1984-07-12 1985-07-12 Halbleiterspeichereinrichtung und verfahren zu ihrer herstellung

Country Status (3)

Country Link
US (1) US4672410A (https=)
KR (1) KR900000207B1 (https=)
DE (1) DE3525418A1 (https=)

Cited By (24)

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DE3643635A1 (de) * 1985-12-25 1987-07-02 Mitsubishi Electric Corp Halbleiterspeichereinrichtung
EP0254046A1 (en) * 1986-07-15 1988-01-27 International Business Machines Corporation Semiconductor memory
US4737829A (en) * 1985-03-28 1988-04-12 Nec Corporation Dynamic random access memory device having a plurality of one-transistor type memory cells
DE3801525A1 (de) * 1987-02-27 1988-09-08 Mitsubishi Electric Corp Halbleitereinrichtung
DE3809653A1 (de) * 1987-03-23 1988-10-13 Mitsubishi Electric Corp Halbleitereinrichtung und verfahren zur herstellung einer halbleitereinrichtung
EP0293134A1 (en) * 1987-05-25 1988-11-30 Matsushita Electronics Corporation Method of fabricating trench cell capacitors on a semiconductor substrate
US4797373A (en) * 1984-10-31 1989-01-10 Texas Instruments Incorporated Method of making dRAM cell with trench capacitor
DE3821405A1 (de) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Halbleiterspeichereinrichtung
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
DE3835692A1 (de) * 1987-11-17 1989-06-01 Mitsubishi Electric Corp Halbleiterspeichereinrichtung und herstellungsverfahren
DE3832414A1 (de) * 1987-11-28 1989-06-08 Mitsubishi Electric Corp Halbleiterspeichereinrichtung
US4859615A (en) * 1985-09-19 1989-08-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory cell capacitor and method for making the same
USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
US5032882A (en) * 1987-12-28 1991-07-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having trench type structure
EP0333426A3 (en) * 1988-03-15 1992-01-29 Kabushiki Kaisha Toshiba Dynamic RAM
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US5183774A (en) * 1987-11-17 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US6715951B2 (en) 2001-04-20 2004-04-06 L'oreal S.A. Unit for applying at least one product

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US4658283A (en) * 1984-07-25 1987-04-14 Hitachi, Ltd. Semiconductor integrated circuit device having a carrier trapping trench arrangement
US5225697A (en) * 1984-09-27 1993-07-06 Texas Instruments, Incorporated dRAM cell and method
JPS61150366A (ja) * 1984-12-25 1986-07-09 Nec Corp Ｍｉｓ型メモリ−セル
JPH0682800B2 (ja) * 1985-04-16 1994-10-19 株式会社東芝 半導体記憶装置
KR900001836B1 (ko) * 1985-07-02 1990-03-24 마쯔시다덴기산교 가부시기가이샤 반도체기억장치 및 그 제조방법
JPS63500484A (ja) * 1985-07-25 1988-02-18 アメリカン テレフオン アンド テレグラフ カムパニ− 溝容量を含む高動作特性ｄｒａｍアレイ
US4751558A (en) * 1985-10-31 1988-06-14 International Business Machines Corporation High density memory with field shield
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPS62136069A (ja) * 1985-12-10 1987-06-19 Hitachi Ltd 半導体装置およびその製造方法
US4801989A (en) * 1986-02-20 1989-01-31 Fujitsu Limited Dynamic random access memory having trench capacitor with polysilicon lined lower electrode
US6028346A (en) * 1986-04-25 2000-02-22 Mitsubishi Denki Kabushiki Kaisha Isolated trench semiconductor device
US5182227A (en) * 1986-04-25 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing the same
USRE33972E (en) * 1986-07-15 1992-06-23 International Business Machines Corporation Two square memory cells
JPH0691212B2 (ja) * 1986-10-07 1994-11-14 日本電気株式会社 半導体メモリ
US4833094A (en) * 1986-10-17 1989-05-23 International Business Machines Corporation Method of making a dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
US4980747A (en) * 1986-12-22 1990-12-25 Texas Instruments Inc. Deep trench isolation with surface contact to substrate
US4819052A (en) * 1986-12-22 1989-04-04 Texas Instruments Incorporated Merged bipolar/CMOS technology using electrically active trench
US4763180A (en) * 1986-12-22 1988-08-09 International Business Machines Corporation Method and structure for a high density VMOS dynamic ram array
US4916524A (en) * 1987-03-16 1990-04-10 Texas Instruments Incorporated Dram cell and method
JPH0687500B2 (ja) * 1987-03-26 1994-11-02 日本電気株式会社 半導体記憶装置およびその製造方法
DE3886283T2 (de) * 1987-07-10 1994-05-11 Toshiba Kawasaki Kk Halbleiterbauelement mit Bereichen unterschiedlicher Störstellenkonzentration.
US5260226A (en) * 1987-07-10 1993-11-09 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
US5726475A (en) * 1987-07-10 1998-03-10 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
US5238860A (en) * 1987-07-10 1993-08-24 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
US4893160A (en) * 1987-11-13 1990-01-09 Siliconix Incorporated Method for increasing the performance of trenched devices and the resulting structure
JP2606857B2 (ja) * 1987-12-10 1997-05-07 株式会社日立製作所 半導体記憶装置の製造方法
US5100823A (en) * 1988-02-29 1992-03-31 Motorola, Inc. Method of making buried stacked transistor-capacitor
US4967245A (en) * 1988-03-14 1990-10-30 Siliconix Incorporated Trench power MOSFET device
US5248891A (en) * 1988-03-25 1993-09-28 Hiroshi Takato High integration semiconductor device
US5106776A (en) * 1988-06-01 1992-04-21 Texas Instruments Incorporated Method of making high performance composed pillar dRAM cell
US5103276A (en) * 1988-06-01 1992-04-07 Texas Instruments Incorporated High performance composed pillar dram cell
US4958206A (en) * 1988-06-28 1990-09-18 Texas Instruments Incorporated Diffused bit line trench capacitor dram cell
JPH0817224B2 (ja) * 1988-08-03 1996-02-21 株式会社東芝 半導体記憶装置の製造方法
US5258635A (en) * 1988-09-06 1993-11-02 Kabushiki Kaisha Toshiba MOS-type semiconductor integrated circuit device
US5181088A (en) * 1988-09-14 1993-01-19 Kabushiki Kaisha Toshiba Vertical field effect transistor with an extended polysilicon channel region
JP2517375B2 (ja) * 1988-12-19 1996-07-24 三菱電機株式会社 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法
WO1990011619A1 (en) * 1989-03-23 1990-10-04 Grumman Aerospace Corporation Single trench mosfet-capacitor cell for analog signal processing
US5053350A (en) * 1989-03-23 1991-10-01 Grumman Aerospace Corporation Method of making trench MOSFET capacitor cell for analog signal processing
US5183772A (en) * 1989-05-10 1993-02-02 Samsung Electronics Co., Ltd. Manufacturing method for a DRAM cell
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
US5021355A (en) * 1989-05-22 1991-06-04 International Business Machines Corporation Method of fabricating cross-point lightly-doped drain-source trench transistor
US5124766A (en) * 1989-06-30 1992-06-23 Texas Instruments Incorporated Filament channel transistor interconnected with a conductor
US5034787A (en) * 1990-06-28 1991-07-23 International Business Machines Corporation Structure and fabrication method for a double trench memory cell device
US5064777A (en) * 1990-06-28 1991-11-12 International Business Machines Corporation Fabrication method for a double trench memory cell device
JPH06163851A (ja) * 1991-06-07 1994-06-10 Texas Instr Japan Ltd 半導体装置及びその製造方法
US5156992A (en) * 1991-06-25 1992-10-20 Texas Instruments Incorporated Process for forming poly-sheet pillar transistor DRAM cell
KR940006679B1 (ko) * 1991-09-26 1994-07-25 현대전자산업 주식회사 수직형 트랜지스터를 갖는 dram셀 및 그 제조방법
US5471087A (en) * 1991-10-02 1995-11-28 Buerger, Jr.; Walter R. Semi-monolithic memory with high-density cell configurations
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US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
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KR100695487B1 (ko) * 2006-03-20 2007-03-16 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
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Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE33261E (en) * 1984-07-03 1990-07-10 Texas Instruments, Incorporated Trench capacitor for high density dynamic RAM
US5208657A (en) * 1984-08-31 1993-05-04 Texas Instruments Incorporated DRAM Cell with trench capacitor and vertical channel in substrate
US4824793A (en) * 1984-09-27 1989-04-25 Texas Instruments Incorporated Method of making DRAM cell with trench capacitor
US4797373A (en) * 1984-10-31 1989-01-10 Texas Instruments Incorporated Method of making dRAM cell with trench capacitor
US5102817A (en) * 1985-03-21 1992-04-07 Texas Instruments Incorporated Vertical DRAM cell and method
US4737829A (en) * 1985-03-28 1988-04-12 Nec Corporation Dynamic random access memory device having a plurality of one-transistor type memory cells
US5164917A (en) * 1985-06-26 1992-11-17 Texas Instruments Incorporated Vertical one-transistor DRAM with enhanced capacitance and process for fabricating
US4859615A (en) * 1985-09-19 1989-08-22 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory cell capacitor and method for making the same
DE3643635A1 (de) * 1985-12-25 1987-07-02 Mitsubishi Electric Corp Halbleiterspeichereinrichtung
US4961095A (en) * 1985-12-25 1990-10-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with word lines adjacent and non-intersecting with capacitor grooves
EP0254046A1 (en) * 1986-07-15 1988-01-27 International Business Machines Corporation Semiconductor memory
US4829017A (en) * 1986-09-25 1989-05-09 Texas Instruments Incorporated Method for lubricating a high capacity dram cell
DE3801525A1 (de) * 1987-02-27 1988-09-08 Mitsubishi Electric Corp Halbleitereinrichtung
DE3809653A1 (de) * 1987-03-23 1988-10-13 Mitsubishi Electric Corp Halbleitereinrichtung und verfahren zur herstellung einer halbleitereinrichtung
US4985368A (en) * 1987-03-23 1991-01-15 Mitsubishi Denki Kabushiki Kaisha Method for making semiconductor device with no stress generated at the trench corner portion
US4843025A (en) * 1987-05-25 1989-06-27 Matsushita Electronics Corporation Method of fabricating trench cell capacitors on a semocondcutor substrate
EP0293134A1 (en) * 1987-05-25 1988-11-30 Matsushita Electronics Corporation Method of fabricating trench cell capacitors on a semiconductor substrate
US4929990A (en) * 1987-07-01 1990-05-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
DE3821405A1 (de) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Halbleiterspeichereinrichtung
US5109259A (en) * 1987-09-22 1992-04-28 Texas Instruments Incorporated Multiple DRAM cells in a trench
US5027173A (en) * 1987-11-17 1991-06-25 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with two separate gates per block
DE3835692A1 (de) * 1987-11-17 1989-06-01 Mitsubishi Electric Corp Halbleiterspeichereinrichtung und herstellungsverfahren
US5183774A (en) * 1987-11-17 1993-02-02 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
US4970580A (en) * 1987-11-28 1990-11-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having protruding cell configuration
DE3832414A1 (de) * 1987-11-28 1989-06-08 Mitsubishi Electric Corp Halbleiterspeichereinrichtung
US5032882A (en) * 1987-12-28 1991-07-16 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having trench type structure
EP0333426A3 (en) * 1988-03-15 1992-01-29 Kabushiki Kaisha Toshiba Dynamic RAM
US5105245A (en) * 1988-06-28 1992-04-14 Texas Instruments Incorporated Trench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en) * 1988-06-28 1993-07-06 Texas Instruments Incorporated Trench capacitor DRAM cell and method of manufacture
US6715951B2 (en) 2001-04-20 2004-04-06 L'oreal S.A. Unit for applying at least one product

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KR900000207B1 (ko) 1990-01-23
DE3525418C2 (https=) 1991-02-07
KR860001469A (ko) 1986-02-26
US4672410A (en) 1987-06-09

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