DE3235409A1 - Integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung - Google Patents
Integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellungInfo
- Publication number
- DE3235409A1 DE3235409A1 DE19823235409 DE3235409A DE3235409A1 DE 3235409 A1 DE3235409 A1 DE 3235409A1 DE 19823235409 DE19823235409 DE 19823235409 DE 3235409 A DE3235409 A DE 3235409A DE 3235409 A1 DE3235409 A1 DE 3235409A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- circuit
- conductivity type
- integrated
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 86
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 35
- 239000002019 doping agent Substances 0.000 claims description 31
- 230000000295 complement effect Effects 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 239000012535 impurity Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 48
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000010354 integration Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- -1 phosphorus ions Chemical class 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000003340 mental effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
- H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
- H03K19/01806—Interface arrangements
- H03K19/01818—Interface arrangements for integrated injection logic (I2L)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H10D84/658—Integrated injection logic integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56149433A JPS5851561A (ja) | 1981-09-24 | 1981-09-24 | 半導体集積回路装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3235409A1 true DE3235409A1 (de) | 1983-04-14 |
Family
ID=15474999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823235409 Withdrawn DE3235409A1 (de) | 1981-09-24 | 1982-09-24 | Integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5851561A (enExample) |
| DE (1) | DE3235409A1 (enExample) |
| FR (2) | FR2514200A1 (enExample) |
| GB (3) | GB2107117B (enExample) |
| HK (2) | HK69887A (enExample) |
| IT (1) | IT1153730B (enExample) |
| MY (1) | MY8700644A (enExample) |
| SG (1) | SG40887G (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5955052A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JPS60253261A (ja) * | 1984-05-29 | 1985-12-13 | Clarion Co Ltd | Ｉｉｌ素子を含む集積回路 |
| JPH0387403A (ja) * | 1989-08-31 | 1991-04-12 | Mitsubishi Electric Corp | 融雪装置 |
| JP2550736B2 (ja) * | 1990-02-14 | 1996-11-06 | 三菱電機株式会社 | 融雪装置 |
| KR920015363A (ko) * | 1991-01-22 | 1992-08-26 | 김광호 | Ttl 입력 버퍼회로 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1901186A1 (de) * | 1968-01-11 | 1969-10-23 | Tektronix Inc | Integrierte Schaltung und Verfahren zu deren Herstellung |
| DE2219696B2 (de) * | 1971-04-28 | 1978-04-06 | International Business Machines Corp., Armonk, N.Y. (V.St.A.) | Verfahren zum Herstellen einer monolithisch integrierten Halbleiteranordnung |
| US4122481A (en) * | 1976-06-23 | 1978-10-24 | Hitachi, Ltd. | Semiconductor IC structure including isolated devices in a single substrate and method for fabricating same |
| GB2037076A (en) * | 1978-11-29 | 1980-07-02 | Hitachi Ltd | Nonvolatile semiconductor memory |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52117086A (en) * | 1976-03-29 | 1977-10-01 | Sharp Corp | Semiconductor device for touch type switch |
| US4258379A (en) * | 1978-09-25 | 1981-03-24 | Hitachi, Ltd. | IIL With in and outdiffused emitter pocket |
| JPS5611661A (en) * | 1979-07-09 | 1981-02-05 | Sankyo Seiki Mfg Co Ltd | Magnetic card reader of normal card containing type |
| JPS56116661A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
-
1981
- 1981-09-24 JP JP56149433A patent/JPS5851561A/ja active Pending
-
1982
- 1982-09-17 IT IT23326/82A patent/IT1153730B/it active
- 1982-09-21 FR FR8215875A patent/FR2514200A1/fr active Granted
- 1982-09-22 GB GB08227060A patent/GB2107117B/en not_active Expired
- 1982-09-24 DE DE19823235409 patent/DE3235409A1/de not_active Withdrawn
-
1983
- 1983-11-23 FR FR8318617A patent/FR2533367B1/fr not_active Expired
-
1985
- 1985-01-31 GB GB08502454A patent/GB2154061B/en not_active Expired
- 1985-01-31 GB GB08502453A patent/GB2154060B/en not_active Expired
-
1987
- 1987-05-06 SG SG40887A patent/SG40887G/en unknown
- 1987-09-24 HK HK698/87A patent/HK69887A/xx unknown
- 1987-09-24 HK HK691/87A patent/HK69187A/xx unknown
- 1987-12-30 MY MY644/87A patent/MY8700644A/xx unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1901186A1 (de) * | 1968-01-11 | 1969-10-23 | Tektronix Inc | Integrierte Schaltung und Verfahren zu deren Herstellung |
| DE2219696B2 (de) * | 1971-04-28 | 1978-04-06 | International Business Machines Corp., Armonk, N.Y. (V.St.A.) | Verfahren zum Herstellen einer monolithisch integrierten Halbleiteranordnung |
| US4122481A (en) * | 1976-06-23 | 1978-10-24 | Hitachi, Ltd. | Semiconductor IC structure including isolated devices in a single substrate and method for fabricating same |
| GB2037076A (en) * | 1978-11-29 | 1980-07-02 | Hitachi Ltd | Nonvolatile semiconductor memory |
Non-Patent Citations (2)
| Title |
|---|
| US-Z: IBM Technical Disclosure Bulletin, Bd.18, No.5, Okt. 1975, S.1401, 1402 * |
| US-Z: IBM Technical Disclosure Bulletin, Bd.24, No.1B, Juni 1981, S.466-470 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5851561A (ja) | 1983-03-26 |
| IT1153730B (it) | 1987-01-14 |
| GB8502454D0 (en) | 1985-03-06 |
| SG40887G (en) | 1987-07-17 |
| GB2154061A (en) | 1985-08-29 |
| FR2514200B1 (enExample) | 1984-07-27 |
| FR2514200A1 (fr) | 1983-04-08 |
| FR2533367B1 (fr) | 1986-01-24 |
| GB2107117A (en) | 1983-04-20 |
| GB8502453D0 (en) | 1985-03-06 |
| FR2533367A1 (fr) | 1984-03-23 |
| GB2154061B (en) | 1986-04-09 |
| MY8700644A (en) | 1987-12-31 |
| IT8223326A0 (it) | 1982-09-17 |
| GB2154060A (en) | 1985-08-29 |
| GB2107117B (en) | 1986-04-09 |
| HK69887A (en) | 1987-10-02 |
| HK69187A (en) | 1987-10-02 |
| GB2154060B (en) | 1986-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OM8 | Search report available as to paragraph 43 lit. 1 sentence 1 patent law | ||
| 8141 | Disposal/no request for examination |