FR2514200A1 - Dispositif possedant un circuit a transistors a effet de champs a grille isolee complementaire et un circuit logique integre a injection sur le meme substrat semi-conducteur, ainsi que son procede de fabrication - Google Patents
Dispositif possedant un circuit a transistors a effet de champs a grille isolee complementaire et un circuit logique integre a injection sur le meme substrat semi-conducteur, ainsi que son procede de fabrication Download PDFInfo
- Publication number
- FR2514200A1 FR2514200A1 FR8215875A FR8215875A FR2514200A1 FR 2514200 A1 FR2514200 A1 FR 2514200A1 FR 8215875 A FR8215875 A FR 8215875A FR 8215875 A FR8215875 A FR 8215875A FR 2514200 A1 FR2514200 A1 FR 2514200A1
- Authority
- FR
- France
- Prior art keywords
- circuit
- semiconductor
- type
- region
- misfet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 239000000758 substrate Substances 0.000 title claims abstract description 33
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 230000000295 complement effect Effects 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 25
- 230000005669 field effect Effects 0.000 title claims description 5
- 239000012535 impurity Substances 0.000 claims abstract description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000012549 training Methods 0.000 claims description 3
- 239000000969 carrier Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000000717 retained effect Effects 0.000 claims 1
- 230000010354 integration Effects 0.000 abstract description 9
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- -1 phosphonium ions Chemical class 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 241000208202 Linaceae Species 0.000 description 1
- 235000004431 Linum usitatissimum Nutrition 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 244000309466 calf Species 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 244000045947 parasite Species 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
- H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
- H03K19/01806—Interface arrangements
- H03K19/01818—Interface arrangements for integrated injection logic (I2L)
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H10D84/658—Integrated injection logic integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56149433A JPS5851561A (ja) | 1981-09-24 | 1981-09-24 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2514200A1 true FR2514200A1 (fr) | 1983-04-08 |
| FR2514200B1 FR2514200B1 (enExample) | 1984-07-27 |
Family
ID=15474999
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8215875A Granted FR2514200A1 (fr) | 1981-09-24 | 1982-09-21 | Dispositif possedant un circuit a transistors a effet de champs a grille isolee complementaire et un circuit logique integre a injection sur le meme substrat semi-conducteur, ainsi que son procede de fabrication |
| FR8318617A Expired FR2533367B1 (fr) | 1981-09-24 | 1983-11-23 | Procede de fabrication d'un dispositif possedant un circuit a transistors a effet de champs a grille isolee complementaire et un circuit logique integre a injection sur le meme substrat semiconducteur |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8318617A Expired FR2533367B1 (fr) | 1981-09-24 | 1983-11-23 | Procede de fabrication d'un dispositif possedant un circuit a transistors a effet de champs a grille isolee complementaire et un circuit logique integre a injection sur le meme substrat semiconducteur |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5851561A (enExample) |
| DE (1) | DE3235409A1 (enExample) |
| FR (2) | FR2514200A1 (enExample) |
| GB (3) | GB2107117B (enExample) |
| HK (2) | HK69887A (enExample) |
| IT (1) | IT1153730B (enExample) |
| MY (1) | MY8700644A (enExample) |
| SG (1) | SG40887G (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5955052A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| JPS60253261A (ja) * | 1984-05-29 | 1985-12-13 | Clarion Co Ltd | Ｉｉｌ素子を含む集積回路 |
| JPH0387403A (ja) * | 1989-08-31 | 1991-04-12 | Mitsubishi Electric Corp | 融雪装置 |
| JP2550736B2 (ja) * | 1990-02-14 | 1996-11-06 | 三菱電機株式会社 | 融雪装置 |
| KR920015363A (ko) * | 1991-01-22 | 1992-08-26 | 김광호 | Ttl 입력 버퍼회로 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4122481A (en) * | 1976-06-23 | 1978-10-24 | Hitachi, Ltd. | Semiconductor IC structure including isolated devices in a single substrate and method for fabricating same |
| JPS56116661A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3594241A (en) * | 1968-01-11 | 1971-07-20 | Tektronix Inc | Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making |
| IT947674B (it) * | 1971-04-28 | 1973-05-30 | Ibm | Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet |
| JPS52117086A (en) * | 1976-03-29 | 1977-10-01 | Sharp Corp | Semiconductor device for touch type switch |
| US4258379A (en) * | 1978-09-25 | 1981-03-24 | Hitachi, Ltd. | IIL With in and outdiffused emitter pocket |
| US4429326A (en) * | 1978-11-29 | 1984-01-31 | Hitachi, Ltd. | I2 L Memory with nonvolatile storage |
| JPS5611661A (en) * | 1979-07-09 | 1981-02-05 | Sankyo Seiki Mfg Co Ltd | Magnetic card reader of normal card containing type |
-
1981
- 1981-09-24 JP JP56149433A patent/JPS5851561A/ja active Pending
-
1982
- 1982-09-17 IT IT23326/82A patent/IT1153730B/it active
- 1982-09-21 FR FR8215875A patent/FR2514200A1/fr active Granted
- 1982-09-22 GB GB08227060A patent/GB2107117B/en not_active Expired
- 1982-09-24 DE DE19823235409 patent/DE3235409A1/de not_active Withdrawn
-
1983
- 1983-11-23 FR FR8318617A patent/FR2533367B1/fr not_active Expired
-
1985
- 1985-01-31 GB GB08502454A patent/GB2154061B/en not_active Expired
- 1985-01-31 GB GB08502453A patent/GB2154060B/en not_active Expired
-
1987
- 1987-05-06 SG SG40887A patent/SG40887G/en unknown
- 1987-09-24 HK HK698/87A patent/HK69887A/xx unknown
- 1987-09-24 HK HK691/87A patent/HK69187A/xx unknown
- 1987-12-30 MY MY644/87A patent/MY8700644A/xx unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4122481A (en) * | 1976-06-23 | 1978-10-24 | Hitachi, Ltd. | Semiconductor IC structure including isolated devices in a single substrate and method for fabricating same |
| JPS56116661A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
Non-Patent Citations (3)
| Title |
|---|
| IBM TECHNICAL DISCLOSURE BULLETIN, vol. 24, no 1B , Juin 1981, New York J.A. DORLER et al. "Complementary bipolar-FET integrated circuit", pages 466,470 * |
| JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 121, no 8, aout 1974, New York DARWISH et al. "C-MOS and complementary isolated bipolar transistor monolithic integration process", pages 1119-1122 * |
| Patent Abstracts of Japan vol. 5, no 197, 15 decembre 1981 & JP-56-116661 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5851561A (ja) | 1983-03-26 |
| IT1153730B (it) | 1987-01-14 |
| GB8502454D0 (en) | 1985-03-06 |
| SG40887G (en) | 1987-07-17 |
| GB2154061A (en) | 1985-08-29 |
| FR2514200B1 (enExample) | 1984-07-27 |
| FR2533367B1 (fr) | 1986-01-24 |
| DE3235409A1 (de) | 1983-04-14 |
| GB2107117A (en) | 1983-04-20 |
| GB8502453D0 (en) | 1985-03-06 |
| FR2533367A1 (fr) | 1984-03-23 |
| GB2154061B (en) | 1986-04-09 |
| MY8700644A (en) | 1987-12-31 |
| IT8223326A0 (it) | 1982-09-17 |
| GB2154060A (en) | 1985-08-29 |
| GB2107117B (en) | 1986-04-09 |
| HK69887A (en) | 1987-10-02 |
| HK69187A (en) | 1987-10-02 |
| GB2154060B (en) | 1986-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |