GB8502453D0 - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
GB8502453D0
GB8502453D0 GB858502453A GB8502453A GB8502453D0 GB 8502453 D0 GB8502453 D0 GB 8502453D0 GB 858502453 A GB858502453 A GB 858502453A GB 8502453 A GB8502453 A GB 8502453A GB 8502453 D0 GB8502453 D0 GB 8502453D0
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB858502453A
Other versions
GB2154060A (en
GB2154060B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8502453D0 publication Critical patent/GB8502453D0/en
Publication of GB2154060A publication Critical patent/GB2154060A/en
Application granted granted Critical
Publication of GB2154060B publication Critical patent/GB2154060B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248Combination of bipolar and field-effect technology
    • H01L21/8249Bipolar and MOS technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248Combination of bipolar and field-effect technology
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • H01L27/0244I2L structures integrated in combination with analog structures
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175Coupling arrangements; Interface arrangements
    • H03K19/018Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806Interface arrangements
    • H03K19/01818Interface arrangements for integrated injection logic (I2L)
GB08502453A 1981-09-24 1985-01-31 Semiconductor integrated circuit devices Expired GB2154060B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149433A JPS5851561A (en) 1981-09-24 1981-09-24 Semiconductor integrated circuit device

Publications (3)

Publication Number Publication Date
GB8502453D0 true GB8502453D0 (en) 1985-03-06
GB2154060A GB2154060A (en) 1985-08-29
GB2154060B GB2154060B (en) 1986-05-14

Family

ID=15474999

Family Applications (3)

Application Number Title Priority Date Filing Date
GB08227060A Expired GB2107117B (en) 1981-09-24 1982-09-22 Semiconductor integrated circuit devices
GB08502454A Expired GB2154061B (en) 1981-09-24 1985-01-31 Methods of manufacturing semiconductor circuit devices
GB08502453A Expired GB2154060B (en) 1981-09-24 1985-01-31 Semiconductor integrated circuit devices

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB08227060A Expired GB2107117B (en) 1981-09-24 1982-09-22 Semiconductor integrated circuit devices
GB08502454A Expired GB2154061B (en) 1981-09-24 1985-01-31 Methods of manufacturing semiconductor circuit devices

Country Status (8)

Country Link
JP (1) JPS5851561A (en)
DE (1) DE3235409A1 (en)
FR (2) FR2514200A1 (en)
GB (3) GB2107117B (en)
HK (2) HK69887A (en)
IT (1) IT1153730B (en)
MY (1) MY8700644A (en)
SG (1) SG40887G (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955052A (en) * 1982-09-24 1984-03-29 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS60253261A (en) * 1984-05-29 1985-12-13 Clarion Co Ltd Integrated circuit containing iil element
JPH0387403A (en) * 1989-08-31 1991-04-12 Mitsubishi Electric Corp Snow melting device
JP2550736B2 (en) * 1990-02-14 1996-11-06 三菱電機株式会社 Snow melting equipment
KR920015363A (en) * 1991-01-22 1992-08-26 김광호 TTL input buffer circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594241A (en) * 1968-01-11 1971-07-20 Tektronix Inc Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making
IT947674B (en) * 1971-04-28 1973-05-30 Ibm EPITAXIAL DIFFUSION TECHNIQUE FOR THE MANUFACTURE OF TRANSISTIC BIPOLAR RI AND FET TRANSISTORS
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4429326A (en) * 1978-11-29 1984-01-31 Hitachi, Ltd. I2 L Memory with nonvolatile storage
JPS5611661A (en) * 1979-07-09 1981-02-05 Sankyo Seiki Mfg Co Ltd Magnetic card reader of normal card containing type
JPS56116661A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Also Published As

Publication number Publication date
FR2533367B1 (en) 1986-01-24
MY8700644A (en) 1987-12-31
SG40887G (en) 1987-07-17
GB2154061A (en) 1985-08-29
IT8223326A0 (en) 1982-09-17
JPS5851561A (en) 1983-03-26
GB2154061B (en) 1986-04-09
GB2154060A (en) 1985-08-29
FR2533367A1 (en) 1984-03-23
FR2514200B1 (en) 1984-07-27
HK69187A (en) 1987-10-02
DE3235409A1 (en) 1983-04-14
GB2154060B (en) 1986-05-14
GB2107117A (en) 1983-04-20
GB2107117B (en) 1986-04-09
HK69887A (en) 1987-10-02
FR2514200A1 (en) 1983-04-08
IT1153730B (en) 1987-01-14
GB8502454D0 (en) 1985-03-06

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940922