FR2514200B1 - - Google Patents

Info

Publication number
FR2514200B1
FR2514200B1 FR8215875A FR8215875A FR2514200B1 FR 2514200 B1 FR2514200 B1 FR 2514200B1 FR 8215875 A FR8215875 A FR 8215875A FR 8215875 A FR8215875 A FR 8215875A FR 2514200 B1 FR2514200 B1 FR 2514200B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8215875A
Other languages
French (fr)
Other versions
FR2514200A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2514200A1 publication Critical patent/FR2514200A1/en
Application granted granted Critical
Publication of FR2514200B1 publication Critical patent/FR2514200B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H01L21/8249—Bipolar and MOS technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8248—Combination of bipolar and field-effect technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806—Interface arrangements
    • H03K19/01818—Interface arrangements for integrated injection logic (I2L)
FR8215875A 1981-09-24 1982-09-21 DEVICE HAVING COMPLEMENTARY INSULATED GRID FIELD-EFFECT TRANSISTOR CIRCUIT AND INJECTION-INTEGRATED LOGIC CIRCUIT ON THE SAME SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME Granted FR2514200A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149433A JPS5851561A (en) 1981-09-24 1981-09-24 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
FR2514200A1 FR2514200A1 (en) 1983-04-08
FR2514200B1 true FR2514200B1 (en) 1984-07-27

Family

ID=15474999

Family Applications (2)

Application Number Title Priority Date Filing Date
FR8215875A Granted FR2514200A1 (en) 1981-09-24 1982-09-21 DEVICE HAVING COMPLEMENTARY INSULATED GRID FIELD-EFFECT TRANSISTOR CIRCUIT AND INJECTION-INTEGRATED LOGIC CIRCUIT ON THE SAME SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING THE SAME
FR8318617A Expired FR2533367B1 (en) 1981-09-24 1983-11-23 METHOD FOR MANUFACTURING A DEVICE HAVING A COMPLEMENTARY ISOLATED GRID FIELD-EFFECT TRANSISTOR CIRCUIT AND AN INTEGRATED INJECTION LOGIC CIRCUIT ON THE SAME SEMICONDUCTOR SUBSTRATE

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR8318617A Expired FR2533367B1 (en) 1981-09-24 1983-11-23 METHOD FOR MANUFACTURING A DEVICE HAVING A COMPLEMENTARY ISOLATED GRID FIELD-EFFECT TRANSISTOR CIRCUIT AND AN INTEGRATED INJECTION LOGIC CIRCUIT ON THE SAME SEMICONDUCTOR SUBSTRATE

Country Status (8)

Country Link
JP (1) JPS5851561A (en)
DE (1) DE3235409A1 (en)
FR (2) FR2514200A1 (en)
GB (3) GB2107117B (en)
HK (2) HK69187A (en)
IT (1) IT1153730B (en)
MY (1) MY8700644A (en)
SG (1) SG40887G (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955052A (en) * 1982-09-24 1984-03-29 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS60253261A (en) * 1984-05-29 1985-12-13 Clarion Co Ltd Integrated circuit containing iil element
JPH0387403A (en) * 1989-08-31 1991-04-12 Mitsubishi Electric Corp Snow melting device
JP2550736B2 (en) * 1990-02-14 1996-11-06 三菱電機株式会社 Snow melting equipment
KR920015363A (en) * 1991-01-22 1992-08-26 김광호 TTL input buffer circuit

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594241A (en) * 1968-01-11 1971-07-20 Tektronix Inc Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making
IT947674B (en) * 1971-04-28 1973-05-30 Ibm EPITAXIAL DIFFUSION TECHNIQUE FOR THE MANUFACTURE OF TRANSISTIC BIPOLAR RI AND FET TRANSISTORS
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4429326A (en) * 1978-11-29 1984-01-31 Hitachi, Ltd. I2 L Memory with nonvolatile storage
JPS5611661A (en) * 1979-07-09 1981-02-05 Sankyo Seiki Mfg Co Ltd Magnetic card reader of normal card containing type
JPS56116661A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Also Published As

Publication number Publication date
IT1153730B (en) 1987-01-14
JPS5851561A (en) 1983-03-26
GB2154060B (en) 1986-05-14
GB2107117B (en) 1986-04-09
GB2154060A (en) 1985-08-29
GB8502454D0 (en) 1985-03-06
GB2154061A (en) 1985-08-29
HK69887A (en) 1987-10-02
DE3235409A1 (en) 1983-04-14
GB2154061B (en) 1986-04-09
MY8700644A (en) 1987-12-31
FR2514200A1 (en) 1983-04-08
GB8502453D0 (en) 1985-03-06
HK69187A (en) 1987-10-02
GB2107117A (en) 1983-04-20
FR2533367B1 (en) 1986-01-24
FR2533367A1 (en) 1984-03-23
IT8223326A0 (en) 1982-09-17
SG40887G (en) 1987-07-17

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Legal Events

Date Code Title Description
ST Notification of lapse