GB2107117B - Semiconductor integrated circuit devices - Google Patents

Semiconductor integrated circuit devices

Info

Publication number
GB2107117B
GB2107117B GB08227060A GB8227060A GB2107117B GB 2107117 B GB2107117 B GB 2107117B GB 08227060 A GB08227060 A GB 08227060A GB 8227060 A GB8227060 A GB 8227060A GB 2107117 B GB2107117 B GB 2107117B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
semiconductor integrated
circuit devices
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08227060A
Other languages
English (en)
Other versions
GB2107117A (en
Inventor
Setsuo Ogura
Shizuo Kondo
Makoto Furihata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB2107117A publication Critical patent/GB2107117A/en
Application granted granted Critical
Publication of GB2107117B publication Critical patent/GB2107117B/en
Priority to SG40987A priority Critical patent/SG40987G/en
Priority to MY648/87A priority patent/MY8700648A/xx
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
    • H03K19/01806—Interface arrangements
    • H03K19/01818—Interface arrangements for integrated injection logic (I2L)
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB08227060A 1981-09-24 1982-09-22 Semiconductor integrated circuit devices Expired GB2107117B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
SG40987A SG40987G (en) 1981-09-24 1987-05-06 Methods of manufacturing semiconductor circuit devices
MY648/87A MY8700648A (en) 1981-09-24 1987-12-30 Methods of manufacturing semiconductor circuit devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149433A JPS5851561A (ja) 1981-09-24 1981-09-24 半導体集積回路装置

Publications (2)

Publication Number Publication Date
GB2107117A GB2107117A (en) 1983-04-20
GB2107117B true GB2107117B (en) 1986-04-09

Family

ID=15474999

Family Applications (3)

Application Number Title Priority Date Filing Date
GB08227060A Expired GB2107117B (en) 1981-09-24 1982-09-22 Semiconductor integrated circuit devices
GB08502454A Expired GB2154061B (en) 1981-09-24 1985-01-31 Methods of manufacturing semiconductor circuit devices
GB08502453A Expired GB2154060B (en) 1981-09-24 1985-01-31 Semiconductor integrated circuit devices

Family Applications After (2)

Application Number Title Priority Date Filing Date
GB08502454A Expired GB2154061B (en) 1981-09-24 1985-01-31 Methods of manufacturing semiconductor circuit devices
GB08502453A Expired GB2154060B (en) 1981-09-24 1985-01-31 Semiconductor integrated circuit devices

Country Status (8)

Country Link
JP (1) JPS5851561A (enExample)
DE (1) DE3235409A1 (enExample)
FR (2) FR2514200A1 (enExample)
GB (3) GB2107117B (enExample)
HK (2) HK69887A (enExample)
IT (1) IT1153730B (enExample)
MY (1) MY8700644A (enExample)
SG (1) SG40887G (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955052A (ja) * 1982-09-24 1984-03-29 Hitachi Ltd 半導体集積回路装置の製造方法
JPS60253261A (ja) * 1984-05-29 1985-12-13 Clarion Co Ltd Ｉｉｌ素子を含む集積回路
JPH0387403A (ja) * 1989-08-31 1991-04-12 Mitsubishi Electric Corp 融雪装置
JP2550736B2 (ja) * 1990-02-14 1996-11-06 三菱電機株式会社 融雪装置
KR920015363A (ko) * 1991-01-22 1992-08-26 김광호 Ttl 입력 버퍼회로

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594241A (en) * 1968-01-11 1971-07-20 Tektronix Inc Monolithic integrated circuit including field effect transistors and bipolar transistors,and method of making
IT947674B (it) * 1971-04-28 1973-05-30 Ibm Tecnica di diffusione epitassiale per la fabbricazione di transisto ri bipolari e transistori fet
JPS52117086A (en) * 1976-03-29 1977-10-01 Sharp Corp Semiconductor device for touch type switch
JPS52156580A (en) * 1976-06-23 1977-12-27 Hitachi Ltd Semiconductor integrated circuit device and its production
US4258379A (en) * 1978-09-25 1981-03-24 Hitachi, Ltd. IIL With in and outdiffused emitter pocket
US4429326A (en) * 1978-11-29 1984-01-31 Hitachi, Ltd. I2 L Memory with nonvolatile storage
JPS5611661A (en) * 1979-07-09 1981-02-05 Sankyo Seiki Mfg Co Ltd Magnetic card reader of normal card containing type
JPS56116661A (en) * 1980-02-20 1981-09-12 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof

Also Published As

Publication number Publication date
JPS5851561A (ja) 1983-03-26
IT1153730B (it) 1987-01-14
GB8502454D0 (en) 1985-03-06
SG40887G (en) 1987-07-17
GB2154061A (en) 1985-08-29
FR2514200B1 (enExample) 1984-07-27
FR2514200A1 (fr) 1983-04-08
FR2533367B1 (fr) 1986-01-24
DE3235409A1 (de) 1983-04-14
GB2107117A (en) 1983-04-20
GB8502453D0 (en) 1985-03-06
FR2533367A1 (fr) 1984-03-23
GB2154061B (en) 1986-04-09
MY8700644A (en) 1987-12-31
IT8223326A0 (it) 1982-09-17
GB2154060A (en) 1985-08-29
HK69887A (en) 1987-10-02
HK69187A (en) 1987-10-02
GB2154060B (en) 1986-05-14

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940922