DE2653901C2 - Poliergemisch zum Polieren von Halbleitersubstratoberflächen - Google Patents
Poliergemisch zum Polieren von HalbleitersubstratoberflächenInfo
- Publication number
- DE2653901C2 DE2653901C2 DE2653901A DE2653901A DE2653901C2 DE 2653901 C2 DE2653901 C2 DE 2653901C2 DE 2653901 A DE2653901 A DE 2653901A DE 2653901 A DE2653901 A DE 2653901A DE 2653901 C2 DE2653901 C2 DE 2653901C2
- Authority
- DE
- Germany
- Prior art keywords
- polishing
- alkali metal
- oxidizing agent
- mixture
- polishing mixture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005498 polishing Methods 0.000 title claims description 52
- 239000000203 mixture Substances 0.000 title claims description 34
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 title claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 239000000377 silicon dioxide Substances 0.000 claims description 17
- 239000002245 particle Substances 0.000 claims description 13
- 239000007800 oxidant agent Substances 0.000 claims description 11
- 229910052783 alkali metal Inorganic materials 0.000 claims description 10
- 150000001340 alkali metals Chemical class 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000002585 base Substances 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 239000000499 gel Substances 0.000 claims description 4
- 229910000288 alkali metal carbonate Inorganic materials 0.000 claims description 2
- 150000008041 alkali metal carbonates Chemical class 0.000 claims description 2
- 150000007973 cyanuric acids Chemical class 0.000 claims description 2
- 159000000001 potassium salts Chemical class 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 7
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- CEJLBZWIKQJOAT-UHFFFAOYSA-N dichloroisocyanuric acid Chemical class ClN1C(=O)NC(=O)N(Cl)C1=O CEJLBZWIKQJOAT-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000010802 sludge Substances 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- YRIZYWQGELRKNT-UHFFFAOYSA-N 1,3,5-trichloro-1,3,5-triazinane-2,4,6-trione Chemical compound ClN1C(=O)N(Cl)C(=O)N(Cl)C1=O YRIZYWQGELRKNT-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- CZCHIEJNWPNBDE-UHFFFAOYSA-N benziodarone Chemical compound CCC=1OC2=CC=CC=C2C=1C(=O)C1=CC(I)=C(O)C(I)=C1 CZCHIEJNWPNBDE-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000002649 leather substitute Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229950009390 symclosene Drugs 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Weting (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/638,018 US4057939A (en) | 1975-12-05 | 1975-12-05 | Silicon wafer polishing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2653901A1 DE2653901A1 (de) | 1977-06-08 |
| DE2653901C2 true DE2653901C2 (de) | 1986-08-14 |
Family
ID=24558310
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2653901A Expired DE2653901C2 (de) | 1975-12-05 | 1976-11-27 | Poliergemisch zum Polieren von Halbleitersubstratoberflächen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4057939A (en, 2012) |
| JP (1) | JPS5269558A (en, 2012) |
| CA (1) | CA1071511A (en, 2012) |
| DE (1) | DE2653901C2 (en, 2012) |
| FR (1) | FR2333847A1 (en, 2012) |
| GB (1) | GB1537128A (en, 2012) |
| IT (1) | IT1124778B (en, 2012) |
Families Citing this family (50)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53119371U (en, 2012) * | 1977-03-01 | 1978-09-22 | ||
| US4260396A (en) * | 1978-01-16 | 1981-04-07 | W. R. Grace & Co. | Compositions for polishing silicon and germanium |
| JPS5935429A (ja) * | 1982-08-12 | 1984-02-27 | インタ−ナシヨナル ビジネス マシ−ンズ コ−ポレ−シヨン | 半導体ウエハの製造方法 |
| DE3237235C2 (de) * | 1982-10-07 | 1986-07-10 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum Polieren von III-V-Halbleiteroberflächen |
| US4435247A (en) | 1983-03-10 | 1984-03-06 | International Business Machines Corporation | Method for polishing titanium carbide |
| US4588421A (en) * | 1984-10-15 | 1986-05-13 | Nalco Chemical Company | Aqueous silica compositions for polishing silicon wafers |
| US4671851A (en) * | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
| US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US4735679A (en) * | 1987-03-30 | 1988-04-05 | International Business Machines Corporation | Method of improving silicon-on-insulator uniformity |
| JPH01187930A (ja) * | 1988-01-22 | 1989-07-27 | Nippon Telegr & Teleph Corp <Ntt> | 研磨剤及び研磨方法 |
| US5226930A (en) * | 1988-06-03 | 1993-07-13 | Monsanto Japan, Ltd. | Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same |
| EP0348757B1 (en) * | 1988-06-28 | 1995-01-04 | Mitsubishi Materials Silicon Corporation | Method for polishing a silicon wafer |
| JPH02209730A (ja) * | 1988-10-02 | 1990-08-21 | Canon Inc | 選択研磨法 |
| JP2577090B2 (ja) * | 1989-08-07 | 1997-01-29 | キヤノン株式会社 | 結晶半導体膜の形成方法 |
| US5139571A (en) * | 1991-04-24 | 1992-08-18 | Motorola, Inc. | Non-contaminating wafer polishing slurry |
| US5376222A (en) * | 1991-09-04 | 1994-12-27 | Fujitsu Limited | Polishing method for polycrystalline silicon |
| US5462568A (en) * | 1992-03-13 | 1995-10-31 | Ronald C. Wiand | Stone polishing composition |
| US5449313A (en) * | 1992-04-14 | 1995-09-12 | Byelocorp Scientific, Inc. | Magnetorheological polishing devices and methods |
| US6503414B1 (en) | 1992-04-14 | 2003-01-07 | Byelocorp Scientific, Inc. | Magnetorheological polishing devices and methods |
| US5264010A (en) * | 1992-04-27 | 1993-11-23 | Rodel, Inc. | Compositions and methods for polishing and planarizing surfaces |
| WO2004077537A1 (ja) * | 1993-01-18 | 2004-09-10 | Shinsuke Sakai | 半導体基板の製造方法 |
| US5318927A (en) * | 1993-04-29 | 1994-06-07 | Micron Semiconductor, Inc. | Methods of chemical-mechanical polishing insulating inorganic metal oxide materials |
| BE1007281A3 (nl) * | 1993-07-12 | 1995-05-09 | Philips Electronics Nv | Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze. |
| US5556323A (en) * | 1994-06-30 | 1996-09-17 | Siecor Corporation | Method of polishing optical connectors |
| US5536202A (en) * | 1994-07-27 | 1996-07-16 | Texas Instruments Incorporated | Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish |
| TW274625B (en, 2012) * | 1994-09-30 | 1996-04-21 | Hitachi Seisakusyo Kk | |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| US5860848A (en) * | 1995-06-01 | 1999-01-19 | Rodel, Inc. | Polishing silicon wafers with improved polishing slurries |
| US5795212A (en) * | 1995-10-16 | 1998-08-18 | Byelocorp Scientific, Inc. | Deterministic magnetorheological finishing |
| EP0786504A3 (en) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Polishing composition |
| US5743785A (en) * | 1996-04-04 | 1998-04-28 | Us Conec Ltd. | Polishing method and apparatus for preferentially etching a ferrule assembly and ferrule assembly produced thereby |
| US5769691A (en) * | 1996-06-14 | 1998-06-23 | Speedfam Corp | Methods and apparatus for the chemical mechanical planarization of electronic devices |
| KR100253083B1 (ko) * | 1997-03-15 | 2000-04-15 | 윤종용 | 반도체용웨이퍼의일렉트론왁스제거를위한왁스세정조성물및이를이용한일렉트론왁스제거방법 |
| US5891205A (en) * | 1997-08-14 | 1999-04-06 | Ekc Technology, Inc. | Chemical mechanical polishing composition |
| JP4163785B2 (ja) * | 1998-04-24 | 2008-10-08 | スピードファム株式会社 | 研磨用組成物及び研磨加工方法 |
| JPH11349925A (ja) * | 1998-06-05 | 1999-12-21 | Fujimi Inc | エッジポリッシング用組成物 |
| US6723143B2 (en) * | 1998-06-11 | 2004-04-20 | Honeywell International Inc. | Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials |
| JP2000080352A (ja) * | 1998-06-11 | 2000-03-21 | Allied Signal Inc | 低誘電率材料用研磨用スラリ―としての水系金属酸化物ゾル |
| JP3810588B2 (ja) * | 1998-06-22 | 2006-08-16 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| KR20000006595A (ko) * | 1998-09-22 | 2000-02-07 | 유현식 | 반도체소자 cmp용 금속산화물 슬러리의 제조방법 |
| US6270395B1 (en) * | 1998-09-24 | 2001-08-07 | Alliedsignal, Inc. | Oxidizing polishing slurries for low dielectric constant materials |
| US6106368A (en) * | 1998-11-18 | 2000-08-22 | Siecor Operations, Llc | Polishing method for preferentially etching a ferrule and ferrule assembly |
| KR20000055131A (ko) * | 1999-02-03 | 2000-09-05 | 유현식 | 반도체소자 ｃｍｐ용 금속산화물 슬러리의 제조방법 |
| JP2001118815A (ja) * | 1999-10-22 | 2001-04-27 | Speedfam Co Ltd | 半導体ウェーハエッジ研磨用研磨組成物及び研磨加工方法 |
| AU1457101A (en) * | 1999-10-28 | 2001-05-08 | Cabot Microelectronics Corporation | Chemical mechanical polishing compositions and systems |
| US6527817B1 (en) | 1999-11-15 | 2003-03-04 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US6293848B1 (en) | 1999-11-15 | 2001-09-25 | Cabot Microelectronics Corporation | Composition and method for planarizing surfaces |
| US6319096B1 (en) | 1999-11-15 | 2001-11-20 | Cabot Corporation | Composition and method for planarizing surfaces |
| JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Ｉｉｉ族窒化物結晶の表面処理方法 |
| DE102005045338B4 (de) * | 2005-09-22 | 2009-04-02 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2744001A (en) * | 1950-09-08 | 1956-05-01 | Rare Earths Inc | Polishing material and method of making same |
| US3029160A (en) * | 1957-10-21 | 1962-04-10 | Carborundum Co | Manufacture of abrasive coated products |
| US3071455A (en) * | 1959-04-22 | 1963-01-01 | Univis Lens Co | Polishing material |
| US3170273A (en) * | 1963-01-10 | 1965-02-23 | Monsanto Co | Process for polishing semiconductor materials |
| US3385682A (en) * | 1965-04-29 | 1968-05-28 | Sprague Electric Co | Method and reagent for surface polishing |
| US3328141A (en) * | 1966-02-28 | 1967-06-27 | Tizon Chemical Corp | Process for polishing crystalline silicon |
| US3429080A (en) * | 1966-05-02 | 1969-02-25 | Tizon Chem Corp | Composition for polishing crystalline silicon and germanium and process |
| US3552071A (en) * | 1967-10-30 | 1971-01-05 | Tizon Chemical Corp | Process for polishing crystalline silicon |
| US3485608A (en) * | 1968-01-02 | 1969-12-23 | Texas Instruments Inc | Slurry for polishing silicon slices |
| US3715842A (en) * | 1970-07-02 | 1973-02-13 | Tizon Chem Corp | Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces |
| US3841031A (en) * | 1970-10-21 | 1974-10-15 | Monsanto Co | Process for polishing thin elements |
| US3691694A (en) * | 1970-11-02 | 1972-09-19 | Ibm | Wafer polishing machine |
| BE789090A (fr) * | 1971-09-22 | 1973-01-15 | Western Electric Co | Procede et solution d'attaque de semi-conducteurs |
| US3807979A (en) * | 1972-05-08 | 1974-04-30 | Philadelphia Quartz Co | Quaternary ammonium silicate for polishing silicon metal |
| DE2247067C3 (de) * | 1972-09-26 | 1979-08-09 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen |
| JPS5084988A (en, 2012) * | 1973-11-26 | 1975-07-09 | ||
| US3922393A (en) * | 1974-07-02 | 1975-11-25 | Du Pont | Process for polishing silicon and germanium semiconductor materials |
-
1975
- 1975-12-05 US US05/638,018 patent/US4057939A/en not_active Expired - Lifetime
-
1976
- 1976-10-11 FR FR7631440A patent/FR2333847A1/fr active Granted
- 1976-10-26 GB GB44527/76A patent/GB1537128A/en not_active Expired
- 1976-11-11 JP JP51134743A patent/JPS5269558A/ja active Granted
- 1976-11-19 IT IT29528/76A patent/IT1124778B/it active
- 1976-11-27 DE DE2653901A patent/DE2653901C2/de not_active Expired
- 1976-12-03 CA CA267,072A patent/CA1071511A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1537128A (en) | 1978-12-29 |
| FR2333847B1 (en, 2012) | 1978-12-22 |
| JPS5269558A (en) | 1977-06-09 |
| IT1124778B (it) | 1986-05-14 |
| US4057939A (en) | 1977-11-15 |
| DE2653901A1 (de) | 1977-06-08 |
| FR2333847A1 (fr) | 1977-07-01 |
| JPS5320379B2 (en, 2012) | 1978-06-26 |
| CA1071511A (en) | 1980-02-12 |
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