FR2333847A1 - Composition de polissage de substrats notamment semi-conducteurs - Google Patents

Composition de polissage de substrats notamment semi-conducteurs

Info

Publication number
FR2333847A1
FR2333847A1 FR7631440A FR7631440A FR2333847A1 FR 2333847 A1 FR2333847 A1 FR 2333847A1 FR 7631440 A FR7631440 A FR 7631440A FR 7631440 A FR7631440 A FR 7631440A FR 2333847 A1 FR2333847 A1 FR 2333847A1
Authority
FR
France
Prior art keywords
polishing composition
substrates especially
especially semiconductors
semiconductors
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7631440A
Other languages
English (en)
Other versions
FR2333847B1 (fr
Inventor
Jagtar S Basi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2333847A1 publication Critical patent/FR2333847A1/fr
Application granted granted Critical
Publication of FR2333847B1 publication Critical patent/FR2333847B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Weting (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
FR7631440A 1975-12-05 1976-10-11 Composition de polissage de substrats notamment semi-conducteurs Granted FR2333847A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/638,018 US4057939A (en) 1975-12-05 1975-12-05 Silicon wafer polishing

Publications (2)

Publication Number Publication Date
FR2333847A1 true FR2333847A1 (fr) 1977-07-01
FR2333847B1 FR2333847B1 (fr) 1978-12-22

Family

ID=24558310

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7631440A Granted FR2333847A1 (fr) 1975-12-05 1976-10-11 Composition de polissage de substrats notamment semi-conducteurs

Country Status (7)

Country Link
US (1) US4057939A (fr)
JP (1) JPS5269558A (fr)
CA (1) CA1071511A (fr)
DE (1) DE2653901C2 (fr)
FR (1) FR2333847A1 (fr)
GB (1) GB1537128A (fr)
IT (1) IT1124778B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2414387A1 (fr) * 1978-01-16 1979-08-10 Grace W R Ltd Compositions pour le polissage du silicium et du germanium et leur procede d'utilisation

Families Citing this family (49)

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Publication number Priority date Publication date Assignee Title
JPS53119371U (fr) * 1977-03-01 1978-09-22
JPS5935429A (ja) * 1982-08-12 1984-02-27 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 半導体ウエハの製造方法
DE3237235C2 (de) * 1982-10-07 1986-07-10 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum Polieren von III-V-Halbleiteroberflächen
US4435247A (en) 1983-03-10 1984-03-06 International Business Machines Corporation Method for polishing titanium carbide
US4588421A (en) * 1984-10-15 1986-05-13 Nalco Chemical Company Aqueous silica compositions for polishing silicon wafers
US4944836A (en) * 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4671851A (en) * 1985-10-28 1987-06-09 International Business Machines Corporation Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique
US4735679A (en) * 1987-03-30 1988-04-05 International Business Machines Corporation Method of improving silicon-on-insulator uniformity
JPH01187930A (ja) * 1988-01-22 1989-07-27 Nippon Telegr & Teleph Corp <Ntt> 研磨剤及び研磨方法
US5226930A (en) * 1988-06-03 1993-07-13 Monsanto Japan, Ltd. Method for preventing agglomeration of colloidal silica and silicon wafer polishing composition using the same
EP0348757B1 (fr) * 1988-06-28 1995-01-04 Mitsubishi Materials Silicon Corporation Procédé de polissage d'une plaquette semi-conductrice
EP0363100A3 (fr) * 1988-10-02 1990-05-23 Canon Kabushiki Kaisha Méthode sélective de polissage
JP2577090B2 (ja) * 1989-08-07 1997-01-29 キヤノン株式会社 結晶半導体膜の形成方法
US5139571A (en) * 1991-04-24 1992-08-18 Motorola, Inc. Non-contaminating wafer polishing slurry
US5376222A (en) * 1991-09-04 1994-12-27 Fujitsu Limited Polishing method for polycrystalline silicon
US5462568A (en) * 1992-03-13 1995-10-31 Ronald C. Wiand Stone polishing composition
US6503414B1 (en) 1992-04-14 2003-01-07 Byelocorp Scientific, Inc. Magnetorheological polishing devices and methods
US5449313A (en) * 1992-04-14 1995-09-12 Byelocorp Scientific, Inc. Magnetorheological polishing devices and methods
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
WO2004077537A1 (fr) * 1993-01-18 2004-09-10 Shinsuke Sakai Procede de fabrication de substrats a semiconducteurs
US5318927A (en) * 1993-04-29 1994-06-07 Micron Semiconductor, Inc. Methods of chemical-mechanical polishing insulating inorganic metal oxide materials
BE1007281A3 (nl) * 1993-07-12 1995-05-09 Philips Electronics Nv Werkwijze voor het polijsten van een oppervlak van koper of een in hoofdzaak koper bevattende legering, magneetkop vervaardigbaar met gebruikmaking van de werkwijze, röntgenstralingcollimerend element en röntgenstralingreflecterend element, beide voorzien van een volgens de werkwijze gepolijst oppervlak en polijstmiddel geschikt voor toepassing in de werkwijze.
US5556323A (en) * 1994-06-30 1996-09-17 Siecor Corporation Method of polishing optical connectors
US5536202A (en) * 1994-07-27 1996-07-16 Texas Instruments Incorporated Semiconductor substrate conditioning head having a plurality of geometries formed in a surface thereof for pad conditioning during chemical-mechanical polish
TW274625B (fr) * 1994-09-30 1996-04-21 Hitachi Seisakusyo Kk
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5860848A (en) * 1995-06-01 1999-01-19 Rodel, Inc. Polishing silicon wafers with improved polishing slurries
US5795212A (en) * 1995-10-16 1998-08-18 Byelocorp Scientific, Inc. Deterministic magnetorheological finishing
EP0786504A3 (fr) * 1996-01-29 1998-05-20 Fujimi Incorporated Composition de polissage
US5743785A (en) * 1996-04-04 1998-04-28 Us Conec Ltd. Polishing method and apparatus for preferentially etching a ferrule assembly and ferrule assembly produced thereby
US5769691A (en) * 1996-06-14 1998-06-23 Speedfam Corp Methods and apparatus for the chemical mechanical planarization of electronic devices
KR100253083B1 (ko) * 1997-03-15 2000-04-15 윤종용 반도체용웨이퍼의일렉트론왁스제거를위한왁스세정조성물및이를이용한일렉트론왁스제거방법
US5891205A (en) * 1997-08-14 1999-04-06 Ekc Technology, Inc. Chemical mechanical polishing composition
JP4163785B2 (ja) * 1998-04-24 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
JPH11349925A (ja) * 1998-06-05 1999-12-21 Fujimi Inc エッジポリッシング用組成物
US6723143B2 (en) * 1998-06-11 2004-04-20 Honeywell International Inc. Reactive aqueous metal oxide sols as polishing slurries for low dielectric constant materials
JP2000080352A (ja) * 1998-06-11 2000-03-21 Allied Signal Inc 低誘電率材料用研磨用スラリ―としての水系金属酸化物ゾル
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
KR20000006595A (ko) * 1998-09-22 2000-02-07 유현식 반도체소자 cmp용 금속산화물 슬러리의 제조방법
US6270395B1 (en) * 1998-09-24 2001-08-07 Alliedsignal, Inc. Oxidizing polishing slurries for low dielectric constant materials
US6106368A (en) * 1998-11-18 2000-08-22 Siecor Operations, Llc Polishing method for preferentially etching a ferrule and ferrule assembly
KR20000055131A (ko) * 1999-02-03 2000-09-05 유현식 반도체소자 ｃｍｐ용 금속산화물 슬러리의 제조방법
JP2001118815A (ja) * 1999-10-22 2001-04-27 Speedfam Co Ltd 半導体ウェーハエッジ研磨用研磨組成物及び研磨加工方法
WO2001030928A1 (fr) * 1999-10-28 2001-05-03 Cabot Microelectronics Corporation Compositions et systemes de polissage chimiomecanique
US6293848B1 (en) 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6319096B1 (en) 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
US6527817B1 (en) 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
DE102005045338B4 (de) * 2005-09-22 2009-04-02 Siltronic Ag Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2744001A (en) * 1950-09-08 1956-05-01 Rare Earths Inc Polishing material and method of making same
US3029160A (en) * 1957-10-21 1962-04-10 Carborundum Co Manufacture of abrasive coated products
US3071455A (en) * 1959-04-22 1963-01-01 Univis Lens Co Polishing material
US3170273A (en) * 1963-01-10 1965-02-23 Monsanto Co Process for polishing semiconductor materials
US3385682A (en) * 1965-04-29 1968-05-28 Sprague Electric Co Method and reagent for surface polishing
US3328141A (en) * 1966-02-28 1967-06-27 Tizon Chemical Corp Process for polishing crystalline silicon
US3429080A (en) * 1966-05-02 1969-02-25 Tizon Chem Corp Composition for polishing crystalline silicon and germanium and process
US3552071A (en) * 1967-10-30 1971-01-05 Tizon Chemical Corp Process for polishing crystalline silicon
US3485608A (en) * 1968-01-02 1969-12-23 Texas Instruments Inc Slurry for polishing silicon slices
US3715842A (en) * 1970-07-02 1973-02-13 Tizon Chem Corp Silica polishing compositions having a reduced tendency to scratch silicon and germanium surfaces
US3841031A (en) * 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US3691694A (en) * 1970-11-02 1972-09-19 Ibm Wafer polishing machine
BE789090A (fr) * 1971-09-22 1973-01-15 Western Electric Co Procede et solution d'attaque de semi-conducteurs
US3807979A (en) * 1972-05-08 1974-04-30 Philadelphia Quartz Co Quaternary ammonium silicate for polishing silicon metal
DE2247067C3 (de) * 1972-09-26 1979-08-09 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Verwendung einer Poliersuspension zum schleierfreien Polieren von Halbleiteroberflächen
JPS5084988A (fr) * 1973-11-26 1975-07-09
US3922393A (en) * 1974-07-02 1975-11-25 Du Pont Process for polishing silicon and germanium semiconductor materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2414387A1 (fr) * 1978-01-16 1979-08-10 Grace W R Ltd Compositions pour le polissage du silicium et du germanium et leur procede d'utilisation

Also Published As

Publication number Publication date
CA1071511A (fr) 1980-02-12
DE2653901C2 (de) 1986-08-14
JPS5269558A (en) 1977-06-09
JPS5320379B2 (fr) 1978-06-26
FR2333847B1 (fr) 1978-12-22
US4057939A (en) 1977-11-15
DE2653901A1 (de) 1977-06-08
IT1124778B (it) 1986-05-14
GB1537128A (en) 1978-12-29

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Legal Events

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