WO2001030928A1 - Compositions et systemes de polissage chimiomecanique - Google Patents

Compositions et systemes de polissage chimiomecanique Download PDF

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Publication number
WO2001030928A1
WO2001030928A1 PCT/US2000/030260 US0030260W WO0130928A1 WO 2001030928 A1 WO2001030928 A1 WO 2001030928A1 US 0030260 W US0030260 W US 0030260W WO 0130928 A1 WO0130928 A1 WO 0130928A1
Authority
WO
WIPO (PCT)
Prior art keywords
acid
cyanuric
cmp
weight percent
substrate
Prior art date
Application number
PCT/US2000/030260
Other languages
English (en)
Inventor
Shumin Wang
Lisa M. LINDZY
Original Assignee
Cabot Microelectronics Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corporation filed Critical Cabot Microelectronics Corporation
Priority to AU14571/01A priority Critical patent/AU1457101A/en
Publication of WO2001030928A1 publication Critical patent/WO2001030928A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Abstract

L'invention concerne une composition de polissage renfermant un additif à base de cyanure. Elle concerne également un système de polissage chimiomécanique comprenant un abrasif, un agent oxydant, au moins un additif à base de cyanure et, éventuellement, des agents complexant, filmogène et dispersant.
PCT/US2000/030260 1999-10-28 2000-10-30 Compositions et systemes de polissage chimiomecanique WO2001030928A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU14571/01A AU1457101A (en) 1999-10-28 2000-10-30 Chemical mechanical polishing compositions and systems

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US42918899A 1999-10-28 1999-10-28
US09/429,188 1999-10-28

Publications (1)

Publication Number Publication Date
WO2001030928A1 true WO2001030928A1 (fr) 2001-05-03

Family

ID=23702178

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/030260 WO2001030928A1 (fr) 1999-10-28 2000-10-30 Compositions et systemes de polissage chimiomecanique

Country Status (3)

Country Link
AU (1) AU1457101A (fr)
TW (1) TW552299B (fr)
WO (1) WO2001030928A1 (fr)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7014669B2 (en) 2002-02-11 2006-03-21 Dupont Air Products Nanomaterials Llc Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
EP1717286A1 (fr) * 2005-04-26 2006-11-02 Sumitomo Electric Industries, Ltd. Procédé de traitement de surface d'un film cristallin de nitrure-groupe III, substrat cristallin de nitrure-groupe III avec une couche épitaxiale, et dispositif semiconducteur
US7513920B2 (en) 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US7731864B2 (en) 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
CN1860198B (zh) * 2003-07-09 2010-06-16 迪纳化学公司 用于化学机械抛光的非聚合有机颗粒
US7799688B2 (en) 2002-06-03 2010-09-21 Hitachi Chemical Co., Ltd. Polishing fluid and method of polishing
CN102337081A (zh) * 2010-06-24 2012-02-01 杜邦纳米材料气体产品有限公司 具有低腐蚀性的化学机械平面化组合物和方法
US10301508B2 (en) 2016-01-25 2019-05-28 Cabot Microelectronics Corporation Polishing composition comprising cationic polymer additive

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057939A (en) * 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
FR2363616A1 (fr) * 1976-09-07 1978-03-31 Procter & Gamble Compositions abrasives de nettoyage, contenant de la perlite expansee

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4057939A (en) * 1975-12-05 1977-11-15 International Business Machines Corporation Silicon wafer polishing
FR2363616A1 (fr) * 1976-09-07 1978-03-31 Procter & Gamble Compositions abrasives de nettoyage, contenant de la perlite expansee

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7429338B2 (en) 2001-10-15 2008-09-30 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US7513920B2 (en) 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US7427305B2 (en) 2002-02-11 2008-09-23 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US7014669B2 (en) 2002-02-11 2006-03-21 Dupont Air Products Nanomaterials Llc Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7799688B2 (en) 2002-06-03 2010-09-21 Hitachi Chemical Co., Ltd. Polishing fluid and method of polishing
CN1860198B (zh) * 2003-07-09 2010-06-16 迪纳化学公司 用于化学机械抛光的非聚合有机颗粒
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
EP1717286A1 (fr) * 2005-04-26 2006-11-02 Sumitomo Electric Industries, Ltd. Procédé de traitement de surface d'un film cristallin de nitrure-groupe III, substrat cristallin de nitrure-groupe III avec une couche épitaxiale, et dispositif semiconducteur
EP2039733A1 (fr) * 2005-04-26 2009-03-25 Sumitomo Electric Industries, Ltd. Procédé de traitement en surface du film de cristal de nitrure du groupe III, substrat de cristal de nitrure du groupe III, substrat de cristal de nitrure du groupe III avec couche épitaxiale, et dispositif de semi-conducteur
CN101792929B (zh) * 2005-04-26 2012-05-30 住友电气工业株式会社 Iii族氮化物晶体基材和半导体设备
US7731864B2 (en) 2005-06-29 2010-06-08 Intel Corporation Slurry for chemical mechanical polishing of aluminum
CN102337081A (zh) * 2010-06-24 2012-02-01 杜邦纳米材料气体产品有限公司 具有低腐蚀性的化学机械平面化组合物和方法
US10301508B2 (en) 2016-01-25 2019-05-28 Cabot Microelectronics Corporation Polishing composition comprising cationic polymer additive

Also Published As

Publication number Publication date
TW552299B (en) 2003-09-11
AU1457101A (en) 2001-05-08

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