DE19680976T1 - Phasenverschiebungsmaske und Herstellungsverfahren dafür - Google Patents

Phasenverschiebungsmaske und Herstellungsverfahren dafür

Info

Publication number
DE19680976T1
DE19680976T1 DE19680976T DE19680976T DE19680976T1 DE 19680976 T1 DE19680976 T1 DE 19680976T1 DE 19680976 T DE19680976 T DE 19680976T DE 19680976 T DE19680976 T DE 19680976T DE 19680976 T1 DE19680976 T1 DE 19680976T1
Authority
DE
Germany
Prior art keywords
manufacturing
phase shift
method therefor
shift mask
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19680976T
Other languages
English (en)
Inventor
Akihiko Isao
Ryoichi Kobayashi
Nobuyuki Yoshioka
Yaichiro Watakabe
Junji Miyazaki
Kouichiro Narimatsu
Shigenori Yamashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Coating Corp
Mitsubishi Electric Corp
Original Assignee
Ulvac Coating Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Coating Corp, Mitsubishi Electric Corp filed Critical Ulvac Coating Corp
Publication of DE19680976T1 publication Critical patent/DE19680976T1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE19680976T 1995-10-24 1996-10-23 Phasenverschiebungsmaske und Herstellungsverfahren dafür Ceased DE19680976T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/547,520 US5674647A (en) 1992-11-21 1995-10-24 Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
PCT/JP1996/003076 WO1997015866A1 (fr) 1995-10-24 1996-10-23 Masque a changement de phase et son procede de fabrication

Publications (1)

Publication Number Publication Date
DE19680976T1 true DE19680976T1 (de) 1997-12-11

Family

ID=24184973

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19680976T Ceased DE19680976T1 (de) 1995-10-24 1996-10-23 Phasenverschiebungsmaske und Herstellungsverfahren dafür

Country Status (6)

Country Link
US (2) US5674647A (de)
KR (1) KR987001099A (de)
CN (1) CN1174613A (de)
DE (1) DE19680976T1 (de)
TW (1) TW400462B (de)
WO (1) WO1997015866A1 (de)

Families Citing this family (43)

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Publication number Priority date Publication date Assignee Title
US5952128A (en) * 1995-08-15 1999-09-14 Ulvac Coating Corporation Phase-shifting photomask blank and method of manufacturing the same as well as phase-shifting photomask
US5923566A (en) * 1997-03-25 1999-07-13 International Business Machines Corporation Phase shifted design verification routine
JP3417798B2 (ja) * 1997-05-19 2003-06-16 株式会社東芝 露光用マスク
US6074571A (en) * 1997-09-30 2000-06-13 International Business Machines Corporation Cut and blast defect to avoid chrome roll over annealing
TW378281B (en) * 1997-11-28 2000-01-01 United Microelectronics Corp Phase shift mask and method for manufacturing the same
JP4328922B2 (ja) 1999-09-21 2009-09-09 信越化学工業株式会社 位相シフト型フォトマスク
KR100526737B1 (ko) 2000-01-12 2005-11-08 신에쓰 가가꾸 고교 가부시끼가이샤 위상 시프트 마스크 블랭크, 위상 시프트 마스크 및이들의 제조 방법
TW480367B (en) 2000-02-16 2002-03-21 Shinetsu Chemical Co Photomask blank, photomask and method of manufacture
KR100468735B1 (ko) * 2002-06-12 2005-01-29 삼성전자주식회사 얼터네이팅 위상 반전 마스크의 제조방법
KR20040008473A (ko) * 2002-07-18 2004-01-31 주식회사 하이닉스반도체 위상반전마스크 형성방법
US8652306B2 (en) * 2002-08-19 2014-02-18 Hoya Corporation Method for manufacturing mask blank, method for manufacturing transfer mask, sputtering target for manufacturing mask blank
US7329474B2 (en) 2003-03-31 2008-02-12 Shin-Estu Chemical Co., Ltd. Photomask blank, photomask, and method of manufacture
US6972819B2 (en) * 2003-04-17 2005-12-06 Hannstar Display Corporation Method of manufacturing IPS-LCD using 4-mask process
US7521000B2 (en) * 2003-08-28 2009-04-21 Applied Materials, Inc. Process for etching photomasks
JP4525893B2 (ja) * 2003-10-24 2010-08-18 信越化学工業株式会社 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法
CN100376016C (zh) * 2003-12-16 2008-03-19 上海华虹（集团）有限公司 一种防止旁瓣被刻蚀转移到衬底的方法
CN100442475C (zh) * 2003-12-30 2008-12-10 中芯国际集成电路制造(上海)有限公司 用于制造半导体晶片的半色调掩模的制造方法和结构
US7348106B2 (en) * 2004-05-07 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for repairing a phase shift mask
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
US7879510B2 (en) * 2005-01-08 2011-02-01 Applied Materials, Inc. Method for quartz photomask plasma etching
US7790334B2 (en) * 2005-01-27 2010-09-07 Applied Materials, Inc. Method for photomask plasma etching using a protected mask
US7829243B2 (en) * 2005-01-27 2010-11-09 Applied Materials, Inc. Method for plasma etching a chromium layer suitable for photomask fabrication
US8293430B2 (en) * 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
JP2006292840A (ja) 2005-04-06 2006-10-26 Advanced Lcd Technologies Development Center Co Ltd 露光方法及びハーフトーン型位相シフトマスク
KR100617389B1 (ko) * 2005-05-16 2006-08-31 주식회사 피케이엘 헤이즈 방지를 위한 위상편이 마스크
US7427458B2 (en) * 2005-06-30 2008-09-23 Lam Research Corporation System and method for critical dimension reduction and pitch reduction
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
US7786019B2 (en) * 2006-12-18 2010-08-31 Applied Materials, Inc. Multi-step photomask etching with chlorine for uniformity control
TWI457697B (zh) 2009-01-15 2014-10-21 Shinetsu Chemical Co 光罩製造方法，空白光罩與乾式蝕刻法
JP4853685B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク又はその製造中間体の検査方法及び良否判定方法
JP4853686B2 (ja) * 2009-03-31 2012-01-11 信越化学工業株式会社 フォトマスクブランク又はその製造中間体の検査方法、高エネルギー線の照射エネルギー量の決定方法、及びフォトマスクブランクの製造方法
JP5588633B2 (ja) * 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
JP5464186B2 (ja) 2011-09-07 2014-04-09 信越化学工業株式会社 フォトマスクブランク、フォトマスク及びその製造方法
JP5982013B2 (ja) * 2012-12-27 2016-08-31 アルバック成膜株式会社 位相シフトマスクおよびその製造方法
JP6266322B2 (ja) * 2013-11-22 2018-01-24 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法
JP6767735B2 (ja) * 2015-06-30 2020-10-14 Hoya株式会社 フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法
JP6558326B2 (ja) 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置
JP6900873B2 (ja) 2016-12-26 2021-07-07 信越化学工業株式会社 フォトマスクブランク及びその製造方法
JP6900872B2 (ja) 2016-12-26 2021-07-07 信越化学工業株式会社 フォトマスクブランク及びその製造方法
CN106653595B (zh) * 2017-01-20 2019-05-21 无锡中微掩模电子有限公司 一种等离子刻蚀设备
JP6960741B2 (ja) * 2017-02-02 2021-11-05 株式会社エスケーエレクトロニクス 位相シフトマスクの欠陥修正方法
JP7027895B2 (ja) 2017-02-09 2022-03-02 信越化学工業株式会社 フォトマスクブランクの製造方法、及びフォトマスクの製造方法
JP6532919B2 (ja) * 2017-09-07 2019-06-19 Hoya株式会社 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク、及び表示装置の製造方法

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Also Published As

Publication number Publication date
US5830607A (en) 1998-11-03
US5674647A (en) 1997-10-07
CN1174613A (zh) 1998-02-25
TW400462B (en) 2000-08-01
WO1997015866A1 (fr) 1997-05-01
KR987001099A (ko) 1998-04-30

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