WO1997015866A1 - Masque a changement de phase et son procede de fabrication - Google Patents
Masque a changement de phase et son procede de fabrication Download PDFInfo
- Publication number
- WO1997015866A1 WO1997015866A1 PCT/JP1996/003076 JP9603076W WO9715866A1 WO 1997015866 A1 WO1997015866 A1 WO 1997015866A1 JP 9603076 W JP9603076 W JP 9603076W WO 9715866 A1 WO9715866 A1 WO 9715866A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- phase shift
- shift mask
- manufacturing
- same
- molybdenum silicide
- Prior art date
Links
- 230000010363 phase shift Effects 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 abstract 3
- -1 molybdenum silicide nitride Chemical class 0.000 abstract 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 abstract 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970704321A KR987001099A (ko) | 1995-10-24 | 1996-10-23 | 위상쉬프트마스크 및 그 제조방법(Phase Shift Mask and Method of Manufacturing the Same) |
DE19680976T DE19680976T1 (de) | 1995-10-24 | 1996-10-23 | Phasenverschiebungsmaske und Herstellungsverfahren dafür |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/547,520 US5674647A (en) | 1992-11-21 | 1995-10-24 | Phase shift mask and manufacturing method thereof and exposure method using phase shift mask |
US08/547,520 | 1995-10-24 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997015866A1 true WO1997015866A1 (fr) | 1997-05-01 |
Family
ID=24184973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP1996/003076 WO1997015866A1 (fr) | 1995-10-24 | 1996-10-23 | Masque a changement de phase et son procede de fabrication |
Country Status (6)
Country | Link |
---|---|
US (2) | US5674647A (ja) |
KR (1) | KR987001099A (ja) |
CN (1) | CN1174613A (ja) |
DE (1) | DE19680976T1 (ja) |
TW (1) | TW400462B (ja) |
WO (1) | WO1997015866A1 (ja) |
Cited By (5)
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---|---|---|---|---|
KR20040008473A (ko) * | 2002-07-18 | 2004-01-31 | 주식회사 하이닉스반도체 | 위상반전마스크 형성방법 |
US7579122B2 (en) | 2005-04-06 | 2009-08-25 | Kabushiki Kaisha Ekisho Sentan Gijutsu Kihatsu Center | Method of exposure and attenuated type phase shift mask |
JP2015102633A (ja) * | 2013-11-22 | 2015-06-04 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法 |
JP2017219865A (ja) * | 2017-09-07 | 2017-12-14 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク、及び表示装置の製造方法 |
JP2018124466A (ja) * | 2017-02-02 | 2018-08-09 | 株式会社エスケーエレクトロニクス | 位相シフトマスクの欠陥修正方法 |
Families Citing this family (38)
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US5952128A (en) * | 1995-08-15 | 1999-09-14 | Ulvac Coating Corporation | Phase-shifting photomask blank and method of manufacturing the same as well as phase-shifting photomask |
US5923566A (en) * | 1997-03-25 | 1999-07-13 | International Business Machines Corporation | Phase shifted design verification routine |
JP3417798B2 (ja) * | 1997-05-19 | 2003-06-16 | 株式会社東芝 | 露光用マスク |
US6074571A (en) * | 1997-09-30 | 2000-06-13 | International Business Machines Corporation | Cut and blast defect to avoid chrome roll over annealing |
TW378281B (en) * | 1997-11-28 | 2000-01-01 | United Microelectronics Corp | Phase shift mask and method for manufacturing the same |
JP4328922B2 (ja) | 1999-09-21 | 2009-09-09 | 信越化学工業株式会社 | 位相シフト型フォトマスク |
US6503668B2 (en) | 2000-01-12 | 2003-01-07 | Shin-Etsu Chemical Co., Ltd. | Phase shift mask blank, phase shift mask, and method of manufacture |
TW480367B (en) | 2000-02-16 | 2002-03-21 | Shinetsu Chemical Co | Photomask blank, photomask and method of manufacture |
KR100468735B1 (ko) * | 2002-06-12 | 2005-01-29 | 삼성전자주식회사 | 얼터네이팅 위상 반전 마스크의 제조방법 |
KR20050052471A (ko) * | 2002-08-19 | 2005-06-02 | 호야 가부시키가이샤 | 마스크 블랭크의 제조방법, 전사 마스크의 제조방법, 마스크 블랭크 제조용 스퍼터링 타깃 |
KR101042468B1 (ko) | 2003-03-31 | 2011-06-16 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 포토마스크 블랭크, 포토마스크, 및 이들의 제조 방법 |
US6972819B2 (en) * | 2003-04-17 | 2005-12-06 | Hannstar Display Corporation | Method of manufacturing IPS-LCD using 4-mask process |
US7521000B2 (en) * | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
JP4525893B2 (ja) * | 2003-10-24 | 2010-08-18 | 信越化学工業株式会社 | 位相シフトマスクブランク、位相シフトマスク及びパターン転写方法 |
CN100376016C (zh) * | 2003-12-16 | 2008-03-19 | 上海华虹(集团)有限公司 | 一种防止旁瓣被刻蚀转移到衬底的方法 |
CN100442475C (zh) * | 2003-12-30 | 2008-12-10 | 中芯国际集成电路制造(上海)有限公司 | 用于制造半导体晶片的半色调掩模的制造方法和结构 |
US7348106B2 (en) * | 2004-05-07 | 2008-03-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for repairing a phase shift mask |
JP4407815B2 (ja) * | 2004-09-10 | 2010-02-03 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスク |
US7879510B2 (en) * | 2005-01-08 | 2011-02-01 | Applied Materials, Inc. | Method for quartz photomask plasma etching |
US7829243B2 (en) * | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
US8293430B2 (en) * | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
US7790334B2 (en) * | 2005-01-27 | 2010-09-07 | Applied Materials, Inc. | Method for photomask plasma etching using a protected mask |
KR100617389B1 (ko) * | 2005-05-16 | 2006-08-31 | 주식회사 피케이엘 | 헤이즈 방지를 위한 위상편이 마스크 |
US7427458B2 (en) * | 2005-06-30 | 2008-09-23 | Lam Research Corporation | System and method for critical dimension reduction and pitch reduction |
JP4737426B2 (ja) * | 2006-04-21 | 2011-08-03 | 信越化学工業株式会社 | フォトマスクブランク |
US7786019B2 (en) * | 2006-12-18 | 2010-08-31 | Applied Materials, Inc. | Multi-step photomask etching with chlorine for uniformity control |
TWI457697B (zh) | 2009-01-15 | 2014-10-21 | Shinetsu Chemical Co | 光罩製造方法,空白光罩與乾式蝕刻法 |
JP4853685B2 (ja) * | 2009-03-31 | 2012-01-11 | 信越化学工業株式会社 | フォトマスクブランク又はその製造中間体の検査方法及び良否判定方法 |
JP4853686B2 (ja) * | 2009-03-31 | 2012-01-11 | 信越化学工業株式会社 | フォトマスクブランク又はその製造中間体の検査方法、高エネルギー線の照射エネルギー量の決定方法、及びフォトマスクブランクの製造方法 |
JP5588633B2 (ja) * | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク |
JP5464186B2 (ja) | 2011-09-07 | 2014-04-09 | 信越化学工業株式会社 | フォトマスクブランク、フォトマスク及びその製造方法 |
CN104737072B (zh) * | 2012-12-27 | 2020-01-07 | 爱发科成膜株式会社 | 相移掩膜及其制造方法 |
JP6767735B2 (ja) * | 2015-06-30 | 2020-10-14 | Hoya株式会社 | フォトマスク、フォトマスクの設計方法、フォトマスクブランク、および表示装置の製造方法 |
JP6558326B2 (ja) | 2016-08-23 | 2019-08-14 | 信越化学工業株式会社 | ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置 |
JP6900872B2 (ja) | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
JP6900873B2 (ja) | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
CN106653595B (zh) * | 2017-01-20 | 2019-05-21 | 无锡中微掩模电子有限公司 | 一种等离子刻蚀设备 |
JP7027895B2 (ja) | 2017-02-09 | 2022-03-02 | 信越化学工業株式会社 | フォトマスクブランクの製造方法、及びフォトマスクの製造方法 |
Citations (17)
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JPS6033557A (ja) * | 1983-08-05 | 1985-02-20 | Konishiroku Photo Ind Co Ltd | 電子線露光用マスク素材の製造方法 |
JPS623257A (ja) * | 1985-06-28 | 1987-01-09 | Toshiba Corp | マスクパタ−ンの形成方法およびこれに使用するマスク基板 |
JPS6232782B2 (ja) * | 1981-03-17 | 1987-07-16 | Hoya Corp | |
JPS6237384B2 (ja) * | 1983-10-25 | 1987-08-12 | Hoya Corp | |
JPS6384138A (ja) * | 1986-09-29 | 1988-04-14 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPH01244304A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | 外観欠陥検査方法 |
JPH0445446A (ja) * | 1990-06-13 | 1992-02-14 | Sony Corp | 位相シフトマスク及び位相シフトマスクの製造方法 |
JPH05127361A (ja) * | 1991-11-01 | 1993-05-25 | Dainippon Printing Co Ltd | ハーフトーン位相シフトフオトマスク |
JPH05257264A (ja) * | 1992-03-14 | 1993-10-08 | Toshiba Corp | 露光用マスク及びその製造方法 |
JPH06118627A (ja) * | 1992-08-21 | 1994-04-28 | Mitsubishi Electric Corp | 位相シフトマスクのパターン欠陥修正方法 |
JPH06175346A (ja) * | 1992-12-03 | 1994-06-24 | Hoya Corp | 位相シフトマスクの製造方法及び位相シフトマスクブランク |
JPH06308713A (ja) * | 1993-04-09 | 1994-11-04 | Dainippon Printing Co Ltd | 位相シフトフォトマスク及び位相シフトフォトマスク用ブランクス |
JPH06332152A (ja) * | 1993-03-26 | 1994-12-02 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク |
JPH06342205A (ja) * | 1993-04-09 | 1994-12-13 | Dainippon Printing Co Ltd | 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法 |
JPH07140635A (ja) * | 1992-11-21 | 1995-06-02 | Ulvac Seibaku Kk | 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法 |
JPH07168343A (ja) * | 1993-10-08 | 1995-07-04 | Dainippon Printing Co Ltd | 位相シフトマスクおよびその製造方法 |
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-
1995
- 1995-10-24 US US08/547,520 patent/US5674647A/en not_active Expired - Lifetime
-
1996
- 1996-10-23 WO PCT/JP1996/003076 patent/WO1997015866A1/ja not_active Application Discontinuation
- 1996-10-23 DE DE19680976T patent/DE19680976T1/de not_active Ceased
- 1996-10-23 CN CN96191933A patent/CN1174613A/zh active Pending
- 1996-10-23 KR KR1019970704321A patent/KR987001099A/ko not_active Application Discontinuation
- 1996-11-14 TW TW085113971A patent/TW400462B/zh not_active IP Right Cessation
-
1997
- 1997-05-27 US US08/864,005 patent/US5830607A/en not_active Expired - Lifetime
Patent Citations (17)
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JPS6232782B2 (ja) * | 1981-03-17 | 1987-07-16 | Hoya Corp | |
JPS6033557A (ja) * | 1983-08-05 | 1985-02-20 | Konishiroku Photo Ind Co Ltd | 電子線露光用マスク素材の製造方法 |
JPS6237384B2 (ja) * | 1983-10-25 | 1987-08-12 | Hoya Corp | |
JPS623257A (ja) * | 1985-06-28 | 1987-01-09 | Toshiba Corp | マスクパタ−ンの形成方法およびこれに使用するマスク基板 |
JPS6384138A (ja) * | 1986-09-29 | 1988-04-14 | Matsushita Electronics Corp | 半導体装置の製造方法 |
JPH01244304A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | 外観欠陥検査方法 |
JPH0445446A (ja) * | 1990-06-13 | 1992-02-14 | Sony Corp | 位相シフトマスク及び位相シフトマスクの製造方法 |
JPH05127361A (ja) * | 1991-11-01 | 1993-05-25 | Dainippon Printing Co Ltd | ハーフトーン位相シフトフオトマスク |
JPH05257264A (ja) * | 1992-03-14 | 1993-10-08 | Toshiba Corp | 露光用マスク及びその製造方法 |
JPH06118627A (ja) * | 1992-08-21 | 1994-04-28 | Mitsubishi Electric Corp | 位相シフトマスクのパターン欠陥修正方法 |
JPH07140635A (ja) * | 1992-11-21 | 1995-06-02 | Ulvac Seibaku Kk | 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法 |
JPH06175346A (ja) * | 1992-12-03 | 1994-06-24 | Hoya Corp | 位相シフトマスクの製造方法及び位相シフトマスクブランク |
JPH06332152A (ja) * | 1993-03-26 | 1994-12-02 | Hoya Corp | 位相シフトマスク及び位相シフトマスクブランク |
JPH06308713A (ja) * | 1993-04-09 | 1994-11-04 | Dainippon Printing Co Ltd | 位相シフトフォトマスク及び位相シフトフォトマスク用ブランクス |
JPH06342205A (ja) * | 1993-04-09 | 1994-12-13 | Dainippon Printing Co Ltd | 位相シフトフォトマスク、位相シフトフォトマスク用ブランクス及びそれらの製造方法 |
JPH07168343A (ja) * | 1993-10-08 | 1995-07-04 | Dainippon Printing Co Ltd | 位相シフトマスクおよびその製造方法 |
JPH07261370A (ja) * | 1994-02-22 | 1995-10-13 | Internatl Business Mach Corp <Ibm> | 減衰位相シフト・マスク作成用の薄膜材料及びその作成方法 |
Cited By (5)
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KR20040008473A (ko) * | 2002-07-18 | 2004-01-31 | 주식회사 하이닉스반도체 | 위상반전마스크 형성방법 |
US7579122B2 (en) | 2005-04-06 | 2009-08-25 | Kabushiki Kaisha Ekisho Sentan Gijutsu Kihatsu Center | Method of exposure and attenuated type phase shift mask |
JP2015102633A (ja) * | 2013-11-22 | 2015-06-04 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク及びその製造方法、並びに表示装置の製造方法 |
JP2018124466A (ja) * | 2017-02-02 | 2018-08-09 | 株式会社エスケーエレクトロニクス | 位相シフトマスクの欠陥修正方法 |
JP2017219865A (ja) * | 2017-09-07 | 2017-12-14 | Hoya株式会社 | 表示装置製造用の位相シフトマスクブランク、表示装置製造用の位相シフトマスク、及び表示装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US5674647A (en) | 1997-10-07 |
DE19680976T1 (de) | 1997-12-11 |
CN1174613A (zh) | 1998-02-25 |
KR987001099A (ko) | 1998-04-30 |
US5830607A (en) | 1998-11-03 |
TW400462B (en) | 2000-08-01 |
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