DE112016005022T5 - Epitaxialsubstrat für halbleiterelemente, halbleiterelement und produktionsverfahren für epitaxialsubstrate für halbleiterelemente - Google Patents

Epitaxialsubstrat für halbleiterelemente, halbleiterelement und produktionsverfahren für epitaxialsubstrate für halbleiterelemente Download PDF

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Publication number
DE112016005022T5
DE112016005022T5 DE112016005022.4T DE112016005022T DE112016005022T5 DE 112016005022 T5 DE112016005022 T5 DE 112016005022T5 DE 112016005022 T DE112016005022 T DE 112016005022T DE 112016005022 T5 DE112016005022 T5 DE 112016005022T5
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layer
buffer layer
group
gan
substrate
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DE112016005022.4T
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German (de)
English (en)
Inventor
Mikiya Ichimura
Sota Maehara
Yoshitaka Kuraoka
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • H—ELECTRICITY
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE112016005022.4T 2015-11-02 2016-10-05 Epitaxialsubstrat für halbleiterelemente, halbleiterelement und produktionsverfahren für epitaxialsubstrate für halbleiterelemente Pending DE112016005022T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562249565P 2015-11-02 2015-11-02
US62/249,565 2015-11-02
JP2016005164 2016-01-14
JP2016-005164 2016-01-14
PCT/JP2016/079619 WO2017077806A1 (fr) 2015-11-02 2016-10-05 Substrat épitaxial pour éléments semi-conducteurs, élément semi-conducteur, et procédé de production de substrats épitaxiaux pour éléments semi-conducteurs

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DE112016005022T5 true DE112016005022T5 (de) 2018-08-02

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DE112016005022.4T Pending DE112016005022T5 (de) 2015-11-02 2016-10-05 Epitaxialsubstrat für halbleiterelemente, halbleiterelement und produktionsverfahren für epitaxialsubstrate für halbleiterelemente
DE112016005028.3T Pending DE112016005028T5 (de) 2015-11-02 2016-11-01 Epitaxialsubstrat für halbleiterelemente, halbleiterelement und produktionsverfahren für epitaxialsubstrate für halbleiterelemente
DE112016005017.8T Pending DE112016005017T5 (de) 2015-11-02 2016-11-01 Epitaxialsubstrat für halbleiterelemente, halbleiterelement und produktionsverfahren für epitaxialsubstrate für halbleiterelemente

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DE112016005028.3T Pending DE112016005028T5 (de) 2015-11-02 2016-11-01 Epitaxialsubstrat für halbleiterelemente, halbleiterelement und produktionsverfahren für epitaxialsubstrate für halbleiterelemente
DE112016005017.8T Pending DE112016005017T5 (de) 2015-11-02 2016-11-01 Epitaxialsubstrat für halbleiterelemente, halbleiterelement und produktionsverfahren für epitaxialsubstrate für halbleiterelemente

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US (3) US10580646B2 (fr)
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