DE112012005019T8 - SiC-Einkristall, SiC-Wafer und Halbleitervorrichtung - Google Patents
SiC-Einkristall, SiC-Wafer und Halbleitervorrichtung Download PDFInfo
- Publication number
- DE112012005019T8 DE112012005019T8 DE112012005019.3T DE112012005019T DE112012005019T8 DE 112012005019 T8 DE112012005019 T8 DE 112012005019T8 DE 112012005019 T DE112012005019 T DE 112012005019T DE 112012005019 T8 DE112012005019 T8 DE 112012005019T8
- Authority
- DE
- Germany
- Prior art keywords
- sic
- semiconductor device
- single crystal
- wafer
- sic single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011265342A JP5750363B2 (ja) | 2011-12-02 | 2011-12-02 | SiC単結晶、SiCウェハ及び半導体デバイス |
JP2011-265342 | 2011-12-02 | ||
PCT/JP2012/081250 WO2013081164A1 (ja) | 2011-12-02 | 2012-12-03 | SiC単結晶、SiCウェハ及び半導体デバイス |
Publications (3)
Publication Number | Publication Date |
---|---|
DE112012005019T5 DE112012005019T5 (de) | 2014-08-21 |
DE112012005019T8 true DE112012005019T8 (de) | 2014-12-04 |
DE112012005019B4 DE112012005019B4 (de) | 2021-10-07 |
Family
ID=48535610
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE112012005019.3T Active DE112012005019B4 (de) | 2011-12-02 | 2012-12-03 | SiC-Einkristall, SiC-Wafer und dessen Verwendung zur Herstellung einer Halbleitervorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US9048102B2 (de) |
JP (1) | JP5750363B2 (de) |
CN (1) | CN104024492B (de) |
DE (1) | DE112012005019B4 (de) |
WO (1) | WO2013081164A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5189156B2 (ja) * | 2010-11-29 | 2013-04-24 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
CN104246026B (zh) | 2012-04-20 | 2017-05-31 | 丰田自动车株式会社 | SiC单晶及其制造方法 |
EP2889397B1 (de) * | 2012-08-26 | 2019-04-03 | National University Corporation Nagoya University | Verfahren zur herstellung von sic-einkristallen |
JP5857986B2 (ja) | 2013-02-20 | 2016-02-10 | 株式会社デンソー | 炭化珪素単結晶および炭化珪素単結晶の製造方法 |
JP5854013B2 (ja) | 2013-09-13 | 2016-02-09 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
JP5931825B2 (ja) * | 2013-09-20 | 2016-06-08 | 新日鉄住金マテリアルズ株式会社 | 炭化珪素単結晶インゴットの製造方法 |
JP6318637B2 (ja) * | 2014-01-17 | 2018-05-09 | 日立金属株式会社 | 高硬度材料のマルチワイヤソーによる切断方法 |
WO2016051485A1 (ja) * | 2014-09-30 | 2016-04-07 | 新日鉄住金マテリアルズ株式会社 | 炭化珪素単結晶ウェハ、及び炭化珪素単結晶インゴットの製造方法 |
US10711369B2 (en) | 2014-12-05 | 2020-07-14 | Showa Denko K.K. | Method for producing silicon carbide single crystal and silicon carbide single crystal substrate |
EP3260582B1 (de) * | 2015-02-18 | 2024-07-17 | Resonac Corporation | Verfahren zur herstellung eines siliciumcarbid-einkristallingots |
CN108138360B (zh) * | 2015-10-07 | 2020-12-08 | 住友电气工业株式会社 | 碳化硅外延基板及用于制造碳化硅半导体装置的方法 |
CN106012002B (zh) * | 2016-06-04 | 2018-06-19 | 山东大学 | 一种偏轴衬底用SiC晶体的生长及高电学均匀性的N型SiC衬底的制备方法 |
JP6722578B2 (ja) * | 2016-12-26 | 2020-07-15 | 昭和電工株式会社 | SiCウェハの製造方法 |
JP6437173B1 (ja) * | 2017-03-30 | 2018-12-12 | 昭和電工株式会社 | SiC単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法 |
JP7170521B2 (ja) * | 2018-12-05 | 2022-11-14 | 昭和電工株式会社 | SiC単結晶の評価用サンプル取得方法 |
JP7238564B2 (ja) * | 2019-04-12 | 2023-03-14 | 富士電機株式会社 | 検査装置、検査方法およびプログラム |
CN113506366B (zh) * | 2021-08-06 | 2024-03-26 | 重庆大学 | 一种位错特征的三维可视化方法 |
CN114481316A (zh) * | 2022-01-27 | 2022-05-13 | 北京青禾晶元半导体科技有限责任公司 | 一种碳化硅晶体的制造方法及装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4880164B2 (ja) * | 2000-02-15 | 2012-02-22 | ザ フォックス グループ,インコーポレイティド | 低欠陥密度炭化ケイ素材料 |
JP3745668B2 (ja) * | 2001-10-12 | 2006-02-15 | 株式会社豊田中央研究所 | SiC単結晶の製造方法並びにSiC種結晶の製造方法 |
JP3750622B2 (ja) * | 2002-03-22 | 2006-03-01 | 株式会社デンソー | エピタキシャル膜付きSiCウエハ及びその製造方法並びにSiC電子デバイス |
JP3776374B2 (ja) * | 2002-04-30 | 2006-05-17 | 株式会社豊田中央研究所 | SiC単結晶の製造方法,並びにエピタキシャル膜付きSiCウエハの製造方法 |
JP3764462B2 (ja) * | 2003-04-10 | 2006-04-05 | 株式会社豊田中央研究所 | 炭化ケイ素単結晶の製造方法 |
JP4219800B2 (ja) * | 2003-12-22 | 2009-02-04 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
US7294324B2 (en) | 2004-09-21 | 2007-11-13 | Cree, Inc. | Low basal plane dislocation bulk grown SiC wafers |
US7314520B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
JP4833798B2 (ja) | 2006-11-02 | 2011-12-07 | 新日本製鐵株式会社 | SiC単結晶の製造方法 |
EP2196566A4 (de) * | 2007-09-12 | 2011-11-30 | Showa Denko Kk | Epitaktisches sic-einkristallsubstrat und verfahren zur herstellung von epitaktischem sic-einkristallsubstrat |
JP5458509B2 (ja) * | 2008-06-04 | 2014-04-02 | 日立金属株式会社 | 炭化珪素半導体基板 |
JP2010089983A (ja) | 2008-10-07 | 2010-04-22 | Ecotron:Kk | SiC単結晶の形成方法 |
JP2010184833A (ja) * | 2009-02-12 | 2010-08-26 | Denso Corp | 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ |
JP5276068B2 (ja) * | 2010-08-26 | 2013-08-28 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
JP5189156B2 (ja) * | 2010-11-29 | 2013-04-24 | 株式会社豊田中央研究所 | SiC単結晶の製造方法 |
JP6025306B2 (ja) | 2011-05-16 | 2016-11-16 | 株式会社豊田中央研究所 | SiC単結晶、SiCウェハ及び半導体デバイス |
-
2011
- 2011-12-02 JP JP2011265342A patent/JP5750363B2/ja active Active
-
2012
- 2012-12-03 DE DE112012005019.3T patent/DE112012005019B4/de active Active
- 2012-12-03 US US14/353,710 patent/US9048102B2/en active Active
- 2012-12-03 CN CN201280059156.6A patent/CN104024492B/zh active Active
- 2012-12-03 WO PCT/JP2012/081250 patent/WO2013081164A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2013081164A1 (ja) | 2013-06-06 |
DE112012005019B4 (de) | 2021-10-07 |
DE112012005019T5 (de) | 2014-08-21 |
JP2013116840A (ja) | 2013-06-13 |
JP5750363B2 (ja) | 2015-07-22 |
US20140291700A1 (en) | 2014-10-02 |
CN104024492B (zh) | 2017-11-14 |
US9048102B2 (en) | 2015-06-02 |
CN104024492A (zh) | 2014-09-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE112012005019T8 (de) | SiC-Einkristall, SiC-Wafer und Halbleitervorrichtung | |
DE102011082289A8 (de) | SiC-Halbleitervorrichtung und Herstellungsverfahren hierfür | |
EP2696368A4 (de) | Halbleiterbauelement aus siliciumcarbid | |
EP2879186A4 (de) | Siliciumcarbidhalbleiterbauelement | |
JP2012134470A5 (ja) | 半導体装置 | |
DE112013001544B8 (de) | Halbleitervorrichtung | |
DE112013002538T8 (de) | Halbleiterbauelement | |
EP2770537A4 (de) | Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür | |
BR112014028253A2 (pt) | dispositivo semicondutor | |
SG11201605303XA (en) | Silicon wafer pre-alignment device and method therefor | |
DE112012006068B8 (de) | Halbleitervorrichtung | |
EP2757588A4 (de) | Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür | |
EP2722892A4 (de) | Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür | |
EP2927960A4 (de) | Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür | |
DE112012007149T8 (de) | Halbleitervorrichtung | |
EP2804215A4 (de) | Herstellungsverfahren für ein siliciumcarbidhalbleiterbauelement | |
EP2717318A4 (de) | Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür | |
EP2927962A4 (de) | Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür | |
EP2927939A4 (de) | Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür | |
EP2763180A4 (de) | Halbleiterbauelement aus siliciumcarbid | |
EP2555232A4 (de) | Epitaktisches substrat für ein halbleiterelement und halbleiterelement | |
EP2784821A4 (de) | Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür | |
EP2889899A4 (de) | Verfahren zur herstellung eines siliciumcarbid-halbleiterbauelements | |
EP2592650A4 (de) | Siliziumcarbidsubstrat, halbleiterbauelement und soi-wafer | |
EP2955743A4 (de) | Verfahren zur herstellung eines siliciumcarbid-halbleitersubstrats und verfahren zur herstellung eines siliciumcarbid-halbleiterbauelements |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R082 | Change of representative |
Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE |
|
R082 | Change of representative |
Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE |
|
R081 | Change of applicant/patentee |
Owner name: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, JP Free format text: FORMER OWNER: DENSO CORPORATION, KABUSHIKI KAISHA TOYOTA CHUO KE, TOYOTA JIDOSHA KABUSHIKI KAISHA, , JP Effective date: 20140821 Owner name: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, JP Free format text: FORMER OWNER: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, NAGAKUTE-SHI, AICHI-KEN, JP Effective date: 20140714 Owner name: DENSO CORPORATION, KARIYA-SHI, JP Free format text: FORMER OWNER: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, NAGAKUTE-SHI, AICHI-KEN, JP Effective date: 20140714 Owner name: DENSO CORPORATION, KARIYA-SHI, JP Free format text: FORMER OWNER: DENSO CORPORATION, KABUSHIKI KAISHA TOYOTA CHUO KE, TOYOTA JIDOSHA KABUSHIKI KAISHA, , JP Effective date: 20140821 Owner name: DENSO CORPORATION, KARIYA-SHI, JP Free format text: FORMER OWNERS: DENSO CORPORATION, KARIYA-SHI, AICHI-KEN, JP; KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, NAGAKUTE-SHI, AICHI-KEN, JP; TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, AICHI-KEN, JP Effective date: 20140821 Owner name: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, JP Free format text: FORMER OWNERS: DENSO CORPORATION, KARIYA-SHI, AICHI-KEN, JP; KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, NAGAKUTE-SHI, AICHI-KEN, JP; TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, AICHI-KEN, JP Effective date: 20140821 |
|
R082 | Change of representative |
Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE Effective date: 20140714 Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE Effective date: 20140821 |
|
R082 | Change of representative |
Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE |
|
R082 | Change of representative |
Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE |
|
R081 | Change of applicant/patentee |
Owner name: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, JP Free format text: FORMER OWNER: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA, , JP Effective date: 20141024 Owner name: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, JP Free format text: FORMER OWNER: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA, , JP Effective date: 20141022 Owner name: DENSO CORPORATION, KARIYA-SHI, JP Free format text: FORMER OWNER: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA, , JP Effective date: 20141024 Owner name: DENSO CORPORATION, KARIYA-SHI, JP Free format text: FORMER OWNER: DENSO CORPORATION, TOYOTA JIDOSHA KABUSHIKI KAISHA, , JP Effective date: 20141022 Owner name: DENSO CORPORATION, KARIYA-SHI, JP Free format text: FORMER OWNERS: DENSO CORPORATION, KARIYA-SHI, AICHI-KEN, JP; TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, AICHI-KEN, JP Effective date: 20141024 Owner name: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, JP Free format text: FORMER OWNERS: DENSO CORPORATION, KARIYA-SHI, AICHI-KEN, JP; TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, AICHI-KEN, JP Effective date: 20141022 Owner name: TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, JP Free format text: FORMER OWNERS: DENSO CORPORATION, KARIYA-SHI, AICHI-KEN, JP; TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, AICHI-KEN, JP Effective date: 20141024 Owner name: DENSO CORPORATION, KARIYA-SHI, JP Free format text: FORMER OWNERS: DENSO CORPORATION, KARIYA-SHI, AICHI-KEN, JP; TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, AICHI-KEN, JP Effective date: 20141022 |
|
R082 | Change of representative |
Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE Effective date: 20141022 Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE Effective date: 20141024 |
|
R012 | Request for examination validly filed | ||
R081 | Change of applicant/patentee |
Owner name: DENSO CORPORATION, KARIYA-SHI, JP Free format text: FORMER OWNERS: DENSO CORPORATION, KARIYA-SHI, AICHI-KEN, JP; TOYOTA JIDOSHA KABUSHIKI KAISHA, TOYOTA-SHI, AICHI-KEN, JP |
|
R082 | Change of representative |
Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAIS, DE Representative=s name: WINTER, BRANDL - PARTNERSCHAFT MBB, PATENTANWA, DE |
|
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R006 | Appeal filed | ||
R007 | Decision rectified on appeal | ||
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final |