DE112012005019T8 - SiC-Einkristall, SiC-Wafer und Halbleitervorrichtung - Google Patents

SiC-Einkristall, SiC-Wafer und Halbleitervorrichtung Download PDF

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Publication number
DE112012005019T8
DE112012005019T8 DE112012005019.3T DE112012005019T DE112012005019T8 DE 112012005019 T8 DE112012005019 T8 DE 112012005019T8 DE 112012005019 T DE112012005019 T DE 112012005019T DE 112012005019 T8 DE112012005019 T8 DE 112012005019T8
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DE
Germany
Prior art keywords
sic
semiconductor device
single crystal
wafer
sic single
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DE112012005019.3T
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English (en)
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DE112012005019B4 (de
DE112012005019T5 (de
Inventor
c/o K.K. Toyota Chuo Kenkyusho Gunjishima Itaru
c/o Denso Corp. Urakami Yasushi
c/o Toyota Jidosha K. K. Adachi Ayumu
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Denso Corp
Original Assignee
Denso Corp
Toyota Motor Corp
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Publication of DE112012005019B4 publication Critical patent/DE112012005019B4/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/025—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE112012005019.3T 2011-12-02 2012-12-03 SiC-Einkristall, SiC-Wafer und dessen Verwendung zur Herstellung einer Halbleitervorrichtung Active DE112012005019B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011265342A JP5750363B2 (ja) 2011-12-02 2011-12-02 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス
JP2011-265342 2011-12-02
PCT/JP2012/081250 WO2013081164A1 (ja) 2011-12-02 2012-12-03 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス

Publications (3)

Publication Number Publication Date
DE112012005019T5 DE112012005019T5 (de) 2014-08-21
DE112012005019T8 true DE112012005019T8 (de) 2014-12-04
DE112012005019B4 DE112012005019B4 (de) 2021-10-07

Family

ID=48535610

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112012005019.3T Active DE112012005019B4 (de) 2011-12-02 2012-12-03 SiC-Einkristall, SiC-Wafer und dessen Verwendung zur Herstellung einer Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US9048102B2 (de)
JP (1) JP5750363B2 (de)
CN (1) CN104024492B (de)
DE (1) DE112012005019B4 (de)
WO (1) WO2013081164A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
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JP5189156B2 (ja) * 2010-11-29 2013-04-24 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
CN104246026B (zh) 2012-04-20 2017-05-31 丰田自动车株式会社 SiC单晶及其制造方法
WO2014034081A1 (ja) * 2012-08-26 2014-03-06 国立大学法人名古屋大学 結晶製造装置、ＳｉＣ単結晶の製造方法およびＳｉＣ単結晶
JP5857986B2 (ja) * 2013-02-20 2016-02-10 株式会社デンソー 炭化珪素単結晶および炭化珪素単結晶の製造方法
JP5854013B2 (ja) * 2013-09-13 2016-02-09 トヨタ自動車株式会社 ＳｉＣ単結晶の製造方法
JP5931825B2 (ja) * 2013-09-20 2016-06-08 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶インゴットの製造方法
JP6318637B2 (ja) * 2014-01-17 2018-05-09 日立金属株式会社 高硬度材料のマルチワイヤソーによる切断方法
WO2016051485A1 (ja) * 2014-09-30 2016-04-07 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハ、及び炭化珪素単結晶インゴットの製造方法
KR101936007B1 (ko) 2014-12-05 2019-01-07 쇼와 덴코 가부시키가이샤 탄화규소 단결정의 제조 방법 및 탄화규소 단결정 기판
KR101960209B1 (ko) * 2015-02-18 2019-03-19 쇼와 덴코 가부시키가이샤 탄화규소 단결정 잉곳의 제조 방법 및 탄화규소 단결정 잉곳
US20170275779A1 (en) * 2015-10-07 2017-09-28 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
CN106012002B (zh) * 2016-06-04 2018-06-19 山东大学 一种偏轴衬底用SiC晶体的生长及高电学均匀性的N型SiC衬底的制备方法
JP6722578B2 (ja) * 2016-12-26 2020-07-15 昭和電工株式会社 ＳｉＣウェハの製造方法
WO2018181788A1 (ja) * 2017-03-30 2018-10-04 昭和電工株式会社 ＳｉＣ単結晶体の品質評価方法及びこれを利用した炭化珪素単結晶インゴットの製造方法
JP7170521B2 (ja) * 2018-12-05 2022-11-14 昭和電工株式会社 ＳｉＣ単結晶の評価用サンプル取得方法
JP7238564B2 (ja) * 2019-04-12 2023-03-14 富士電機株式会社 検査装置、検査方法およびプログラム
CN113506366B (zh) * 2021-08-06 2024-03-26 重庆大学 一种位错特征的三维可视化方法
CN114481316A (zh) * 2022-01-27 2022-05-13 北京青禾晶元半导体科技有限责任公司 一种碳化硅晶体的制造方法及装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4880164B2 (ja) * 2000-02-15 2012-02-22 ザ フォックス グループ，インコーポレイティド 低欠陥密度炭化ケイ素材料
JP3745668B2 (ja) * 2001-10-12 2006-02-15 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法並びにＳｉＣ種結晶の製造方法
JP3750622B2 (ja) * 2002-03-22 2006-03-01 株式会社デンソー エピタキシャル膜付きＳｉＣウエハ及びその製造方法並びにＳｉＣ電子デバイス
JP3776374B2 (ja) * 2002-04-30 2006-05-17 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法，並びにエピタキシャル膜付きＳｉＣウエハの製造方法
JP3764462B2 (ja) * 2003-04-10 2006-04-05 株式会社豊田中央研究所 炭化ケイ素単結晶の製造方法
JP4219800B2 (ja) * 2003-12-22 2009-02-04 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
US7294324B2 (en) * 2004-09-21 2007-11-13 Cree, Inc. Low basal plane dislocation bulk grown SiC wafers
US7314520B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low 1c screw dislocation 3 inch silicon carbide wafer
JP4833798B2 (ja) 2006-11-02 2011-12-07 新日本製鐵株式会社 ＳｉＣ単結晶の製造方法
CN101802273B (zh) * 2007-09-12 2013-04-17 昭和电工株式会社 外延SiC单晶衬底及外延SiC单晶衬底的制造方法
JP5458509B2 (ja) * 2008-06-04 2014-04-02 日立金属株式会社 炭化珪素半導体基板
JP2010089983A (ja) 2008-10-07 2010-04-22 Ecotron:Kk ＳｉＣ単結晶の形成方法
JP2010184833A (ja) * 2009-02-12 2010-08-26 Denso Corp 炭化珪素単結晶基板および炭化珪素単結晶エピタキシャルウェハ
JP5276068B2 (ja) * 2010-08-26 2013-08-28 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
JP5189156B2 (ja) * 2010-11-29 2013-04-24 株式会社豊田中央研究所 ＳｉＣ単結晶の製造方法
JP6025306B2 (ja) 2011-05-16 2016-11-16 株式会社豊田中央研究所 ＳｉＣ単結晶、ＳｉＣウェハ及び半導体デバイス

Also Published As

Publication number Publication date
JP2013116840A (ja) 2013-06-13
US9048102B2 (en) 2015-06-02
US20140291700A1 (en) 2014-10-02
JP5750363B2 (ja) 2015-07-22
WO2013081164A1 (ja) 2013-06-06
DE112012005019B4 (de) 2021-10-07
CN104024492B (zh) 2017-11-14
DE112012005019T5 (de) 2014-08-21
CN104024492A (zh) 2014-09-03

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