DE112004000235B4 - Fotomasken-Rohling, Fotomaske und Muster-Übertragungsverfahren unter Verwendung einer Fotomaske - Google Patents

Fotomasken-Rohling, Fotomaske und Muster-Übertragungsverfahren unter Verwendung einer Fotomaske Download PDF

Info

Publication number
DE112004000235B4
DE112004000235B4 DE112004000235.4T DE112004000235T DE112004000235B4 DE 112004000235 B4 DE112004000235 B4 DE 112004000235B4 DE 112004000235 T DE112004000235 T DE 112004000235T DE 112004000235 B4 DE112004000235 B4 DE 112004000235B4
Authority
DE
Germany
Prior art keywords
film
light
photomask
photomask blank
shielding film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE112004000235.4T
Other languages
German (de)
English (en)
Other versions
DE112004000235T5 (de
Inventor
Mitsuhiro Kureishi
Hideaki Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of DE112004000235T5 publication Critical patent/DE112004000235T5/de
Application granted granted Critical
Publication of DE112004000235B4 publication Critical patent/DE112004000235B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
DE112004000235.4T 2003-02-03 2004-02-02 Fotomasken-Rohling, Fotomaske und Muster-Übertragungsverfahren unter Verwendung einer Fotomaske Expired - Fee Related DE112004000235B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003-25485 2003-02-03
JP2003025485 2003-02-03
PCT/JP2004/000992 WO2004070472A1 (ja) 2003-02-03 2004-02-02 フォトマスクブランク及びフォトマスク、並びにフォトマスクを用いたパターン転写方法

Publications (2)

Publication Number Publication Date
DE112004000235T5 DE112004000235T5 (de) 2006-01-12
DE112004000235B4 true DE112004000235B4 (de) 2018-12-27

Family

ID=32844109

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112004000235.4T Expired - Fee Related DE112004000235B4 (de) 2003-02-03 2004-02-02 Fotomasken-Rohling, Fotomaske und Muster-Übertragungsverfahren unter Verwendung einer Fotomaske

Country Status (6)

Country Link
US (2) US20060057469A1 (https=)
JP (2) JP4451391B2 (https=)
KR (3) KR101049624B1 (https=)
DE (1) DE112004000235B4 (https=)
TW (1) TWI229780B (https=)
WO (1) WO2004070472A1 (https=)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI259329B (en) * 2003-04-09 2006-08-01 Hoya Corp Method of manufacturing a photomask, and photomask blank
CN102683391B (zh) 2004-06-04 2015-11-18 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法和设备
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
DE112005001588B4 (de) * 2004-07-09 2021-02-25 Hoya Corp. Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
TWI375114B (en) 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
TWI420237B (zh) * 2005-06-02 2013-12-21 美國伊利諾大學理事會 藉由對彈性印模之黏著性動力控制之圖案轉印印刷
JP5178996B2 (ja) * 2005-06-23 2013-04-10 凸版印刷株式会社 反射型フォトマスクブランク、反射型フォトマスク、ならびにこれを用いたパターン転写方法
KR101426190B1 (ko) * 2005-09-09 2014-07-31 호야 가부시키가이샤 포토마스크 블랭크, 포토마스크와 그 제조 방법, 및 반도체 장치의 제조 방법
JP4726010B2 (ja) * 2005-11-16 2011-07-20 Ｈｏｙａ株式会社 マスクブランク及びフォトマスク
TWI569092B (zh) * 2005-12-26 2017-02-01 Hoya Corp A mask substrate and a mask for manufacturing a flat panel display device
WO2007074806A1 (ja) * 2005-12-26 2007-07-05 Hoya Corporation フォトマスクブランク及びフォトマスクの製造方法、並びに半導体装置の製造方法
JP4551344B2 (ja) * 2006-03-02 2010-09-29 信越化学工業株式会社 フォトマスクブランクおよびフォトマスク
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP5035244B2 (ja) * 2006-07-20 2012-09-26 日立化成工業株式会社 光電気混載基板
DE102007028800B4 (de) * 2007-06-22 2016-11-03 Advanced Mask Technology Center Gmbh & Co. Kg Maskensubstrat, Photomaske und Verfahren zur Herstellung einer Photomaske
KR101584383B1 (ko) 2008-03-31 2016-01-11 호야 가부시키가이샤 포토마스크 블랭크, 포토마스크 및 포토마스크 블랭크의 제조 방법
JP5372403B2 (ja) * 2008-05-01 2013-12-18 Ｈｏｙａ株式会社 多階調フォトマスク、及びパターン転写方法
CN102203906B (zh) * 2008-10-30 2013-10-09 旭硝子株式会社 Euv光刻用反射型掩模坯料
JP5658435B2 (ja) * 2009-03-31 2015-01-28 リンテック株式会社 マスクフィルム用部材、それを用いたマスクフィルムの製造方法及び感光性樹脂印刷版の製造方法
JP5201361B2 (ja) * 2009-05-15 2013-06-05 信越化学工業株式会社 フォトマスクブランクの加工方法
JP5257256B2 (ja) * 2009-06-11 2013-08-07 信越化学工業株式会社 フォトマスクの製造方法
JP2012002908A (ja) * 2010-06-15 2012-01-05 Toshiba Corp フォトマスク
KR20120069006A (ko) * 2010-11-02 2012-06-28 삼성전기주식회사 포토마스크
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
JP2011228743A (ja) * 2011-07-26 2011-11-10 Toppan Printing Co Ltd 反射型フォトマスクブランク、反射型フォトマスク、ならびにこれを用いたパターン転写方法
JP5474129B2 (ja) * 2012-05-24 2014-04-16 信越化学工業株式会社 半透明積層膜の設計方法およびフォトマスクブランクの製造方法
JP5701946B2 (ja) * 2013-08-14 2015-04-15 Hoya株式会社 位相シフトマスクの製造方法
US11187972B2 (en) 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
JP6998181B2 (ja) 2017-11-14 2022-02-04 アルバック成膜株式会社 マスクブランク、位相シフトマスクおよびその製造方法
TWI711878B (zh) * 2018-03-15 2020-12-01 日商大日本印刷股份有限公司 大型光罩
JP7254599B2 (ja) * 2019-04-15 2023-04-10 アルバック成膜株式会社 マスクブランクスの製造方法および位相シフトマスクの製造方法
JP7303077B2 (ja) 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
JP7331793B2 (ja) 2020-06-30 2023-08-23 信越化学工業株式会社 フォトマスクの製造方法及びフォトマスクブランク

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622787A (en) 1993-12-09 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same
JP2000181049A (ja) 1998-12-18 2000-06-30 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2002156743A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd フォトマスクブランクス及びその製造方法
EP1498936A1 (en) 2002-04-11 2005-01-19 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
DE10392892T5 (de) 2002-07-04 2005-07-07 Hoya Corp. Reflektierender Maskenrohling

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59139034A (ja) * 1983-01-31 1984-08-09 Hoya Corp フオトマスクブランク
JP3041802B2 (ja) * 1990-04-27 2000-05-15 ホーヤ株式会社 フォトマスクブランク及びフォトマスク
JP3037763B2 (ja) * 1991-01-31 2000-05-08 ホーヤ株式会社 フォトマスクブランク及びその製造方法、並びにフォトマスク及びその製造方法
JPH0695363A (ja) * 1992-09-11 1994-04-08 Toppan Printing Co Ltd フォトマスクブランク及びその製造方法並びにフォトマスク
JP2000012428A (ja) * 1998-06-19 2000-01-14 Canon Inc Ｘ線マスク構造体、該ｘ線マスク構造体を用いたｘ線露光方法、前記ｘ線マスク構造体を用いたｘ線露光装置、前記ｘ線マスク構造体を用いた半導体デバイスの製造方法、および該製造方法によって製造された半導体デバイス
KR100424853B1 (ko) * 1998-07-31 2004-03-27 호야 가부시키가이샤 포토마스크 블랭크, 포토마스크, 이들의 제조방법 및미세패턴의 형성방법
KR100322537B1 (ko) * 1999-07-02 2002-03-25 윤종용 블랭크 마스크 및 이를 이용한 위상 반전 마스크 제조방법
US6472107B1 (en) * 1999-09-30 2002-10-29 Photronics, Inc. Disposable hard mask for photomask plasma etching
JP2001201842A (ja) * 1999-11-09 2001-07-27 Ulvac Seimaku Kk 位相シフトフォトマスクブランクス及び位相シフトフォトマスク並びに半導体装置の製造方法
JP4686006B2 (ja) * 2000-04-27 2011-05-18 大日本印刷株式会社 ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法
JP2002229183A (ja) * 2000-12-01 2002-08-14 Hoya Corp リソグラフィーマスクブランク及びその製造方法
KR100375218B1 (ko) * 2000-12-07 2003-03-07 삼성전자주식회사 반사 방지막 및 자기정렬 콘택 기술을 사용하는 반도체 소자의 제조 방법 및 그에 의해 제조된 반도체 소자
JP4088742B2 (ja) * 2000-12-26 2008-05-21 信越化学工業株式会社 フォトマスクブランクス、フォトマスク及びフォトマスクブランクスの製造方法
JP4696365B2 (ja) * 2001-01-30 2011-06-08 凸版印刷株式会社 レベンソン型位相シフトマスク
JP4020242B2 (ja) * 2001-09-28 2007-12-12 Ｈｏｙａ株式会社 マスクブランク、及びマスク
US7166392B2 (en) * 2002-03-01 2007-01-23 Hoya Corporation Halftone type phase shift mask blank and halftone type phase shift mask

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5622787A (en) 1993-12-09 1997-04-22 Mitsubishi Denki Kabushiki Kaisha Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same
JP2000181049A (ja) 1998-12-18 2000-06-30 Hoya Corp ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP2002156743A (ja) 2000-11-20 2002-05-31 Shin Etsu Chem Co Ltd フォトマスクブランクス及びその製造方法
EP1498936A1 (en) 2002-04-11 2005-01-19 Hoya Corporation Reflection type mask blank and reflection type mask and production methods for them
DE10392892T5 (de) 2002-07-04 2005-07-07 Hoya Corp. Reflektierender Maskenrohling

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
„Photomask gijutsu no hanashi (Story about Photomask Technology)", verfasst von Isao Tanabe, Youichi Takehana und Morisika Hougen, Kogyo Chosakai Publishing Inc., 20. August 1996, Seiten 80-81

Also Published As

Publication number Publication date
KR101029162B1 (ko) 2011-04-12
KR20090057316A (ko) 2009-06-04
DE112004000235T5 (de) 2006-01-12
JPWO2004070472A1 (ja) 2006-05-25
KR20050096174A (ko) 2005-10-05
JP2009163264A (ja) 2009-07-23
TWI229780B (en) 2005-03-21
TW200424750A (en) 2004-11-16
KR101049624B1 (ko) 2011-07-15
KR100960193B1 (ko) 2010-05-27
JP4451391B2 (ja) 2010-04-14
JP4907688B2 (ja) 2012-04-04
WO2004070472A1 (ja) 2004-08-19
KR20100012872A (ko) 2010-02-08
US20120034553A1 (en) 2012-02-09
US20060057469A1 (en) 2006-03-16

Similar Documents

Publication Publication Date Title
DE112004000235B4 (de) Fotomasken-Rohling, Fotomaske und Muster-Übertragungsverfahren unter Verwendung einer Fotomaske
DE112004000591B4 (de) Herstellungsverfahren für Photomaske
DE102009010855B4 (de) Fotomaskenrohling, Fotomaske und Verfahren zum Herstellen einer Fotomaske
DE102009014609B4 (de) Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung
DE10144894B4 (de) Verfahren zur Herstellung einer Phasenverschiebungsmaskenvorform und Verfahren zur Herstellung einer Phasenverschiebungsmaske
DE10307518B4 (de) Halbtonphasenschiebermaskenrohling, Halbtonphasenschiebermaske und Verfahren zu deren Herstellung
DE102009043145B4 (de) Maskenrohling und Verfahren zum Herstellen einer Übertragungsmaske
DE112015001717B4 (de) Maskenrohling, Phasenverschiebungsmaske und Verfahren zur Herstellung derselben
DE69509502T2 (de) Rohling für belichtungsmaske
DE102009010854B4 (de) Fotomaskenrohling, Fotomaske und Verfahren zu ihrer Herstellung
DE10164189B4 (de) Halbton-Phasenverschiebungsmaske und -maskenrohling
DE10055280B4 (de) Phasenverschiebungs-Photomaskenrohling, Phasenverschiebungs-Photomaske und Verfahren zur Herstellung von Halbleiterbauelementen
DE102011122937B3 (de) Verfahren zum Herstellen einer Übertragungsmaske und Verfahren zum Herstellen eines Halbleiterbauelements
DE60106186T2 (de) Photomaskenrohling und Photomaske
DE69512833T2 (de) Bedämpfte Phasenschiebemaske und Verfahren zu ihrer Herstellung
DE69132303T2 (de) Maske für Photolithographie
DE102009015589A1 (de) Phasenverschiebungsmaskenrohling und Verfahren zum Herstellen einer Phasenverschiebungsmaske
DE102005025398A1 (de) Maskenrohling, Herstellungsverfahren für eine Phasenänderungsmaske und Herstellungsverfahren für eine Form
DE102004013459A1 (de) Verfahren zur Herstellung einer reflektierenden Maske und Verfahren zur Herstellung eines Halbleiterbauelements
DE69329579T2 (de) Blankophotomasker
DE69606979T2 (de) Phasenverschiebungsmaske, Rohteil für eine solche Maske und Verfahren zur Herstellung einer solchen Maske
DE112005001588B4 (de) Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
DE60019917T2 (de) Halbtonphasenschiebermaske und maskenrohling
DE60102397T2 (de) Phasenschiebermaske-Rohling, Phasenschiebermaske und Herstellungsverfahren
DE102008046985B4 (de) Verfahren zur Herstellung einer Maske

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
R079 Amendment of ipc main class
R079 Amendment of ipc main class
R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee