TWI229780B - Blank photomask, photomask and method of pattern transferring using photomask - Google Patents

Blank photomask, photomask and method of pattern transferring using photomask Download PDF

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Publication number
TWI229780B
TWI229780B TW093102355A TW93102355A TWI229780B TW I229780 B TWI229780 B TW I229780B TW 093102355 A TW093102355 A TW 093102355A TW 93102355 A TW93102355 A TW 93102355A TW I229780 B TWI229780 B TW I229780B
Authority
TW
Taiwan
Prior art keywords
film
photomask
blank
light
patent application
Prior art date
Application number
TW093102355A
Other languages
English (en)
Chinese (zh)
Other versions
TW200424750A (en
Inventor
Mitsuhiro Kureishi
Hideaki Mitsui
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200424750A publication Critical patent/TW200424750A/zh
Application granted granted Critical
Publication of TWI229780B publication Critical patent/TWI229780B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
TW093102355A 2003-02-03 2004-02-03 Blank photomask, photomask and method of pattern transferring using photomask TWI229780B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003025485 2003-02-03

Publications (2)

Publication Number Publication Date
TW200424750A TW200424750A (en) 2004-11-16
TWI229780B true TWI229780B (en) 2005-03-21

Family

ID=32844109

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093102355A TWI229780B (en) 2003-02-03 2004-02-03 Blank photomask, photomask and method of pattern transferring using photomask

Country Status (6)

Country Link
US (2) US20060057469A1 (https=)
JP (2) JP4451391B2 (https=)
KR (3) KR101049624B1 (https=)
DE (1) DE112004000235B4 (https=)
TW (1) TWI229780B (https=)
WO (1) WO2004070472A1 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI397766B (zh) * 2005-12-26 2013-06-01 Ｈｏｙａ股份有限公司 A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device
TWI420237B (zh) * 2005-06-02 2013-12-21 美國伊利諾大學理事會 藉由對彈性印模之黏著性動力控制之圖案轉印印刷
TWI422963B (zh) * 2008-05-01 2014-01-11 Ｈｏｙａ股份有限公司 多階調光罩及其製造方法、及圖案轉印方法
US8664699B2 (en) 2004-06-04 2014-03-04 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
TWI468851B (zh) * 2009-06-11 2015-01-11 信越化學工業股份有限公司 光罩之製造方法
US9075314B2 (en) 2008-03-31 2015-07-07 Hoya Corporation Photomask blank, photomask, and method for manufacturing photomask blank
US9105555B2 (en) 2004-06-04 2015-08-11 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing

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TWI259329B (en) * 2003-04-09 2006-08-01 Hoya Corp Method of manufacturing a photomask, and photomask blank
DE112005001588B4 (de) * 2004-07-09 2021-02-25 Hoya Corp. Fotomaskenrohling, Fotomaskenherstellungsverfahren und Halbleiterbausteinherstellungsverfahren
JP2006078825A (ja) * 2004-09-10 2006-03-23 Shin Etsu Chem Co Ltd フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
TWI375114B (en) 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
JP5178996B2 (ja) * 2005-06-23 2013-04-10 凸版印刷株式会社 反射型フォトマスクブランク、反射型フォトマスク、ならびにこれを用いたパターン転写方法
KR101426190B1 (ko) * 2005-09-09 2014-07-31 호야 가부시키가이샤 포토마스크 블랭크, 포토마스크와 그 제조 방법, 및 반도체 장치의 제조 방법
JP4726010B2 (ja) * 2005-11-16 2011-07-20 Ｈｏｙａ株式会社 マスクブランク及びフォトマスク
TWI569092B (zh) * 2005-12-26 2017-02-01 Hoya Corp A mask substrate and a mask for manufacturing a flat panel display device
JP4551344B2 (ja) * 2006-03-02 2010-09-29 信越化学工業株式会社 フォトマスクブランクおよびフォトマスク
JP4509050B2 (ja) * 2006-03-10 2010-07-21 信越化学工業株式会社 フォトマスクブランク及びフォトマスク
JP4883278B2 (ja) * 2006-03-10 2012-02-22 信越化学工業株式会社 フォトマスクブランク及びフォトマスクの製造方法
JP4737426B2 (ja) * 2006-04-21 2011-08-03 信越化学工業株式会社 フォトマスクブランク
JP5035244B2 (ja) * 2006-07-20 2012-09-26 日立化成工業株式会社 光電気混載基板
DE102007028800B4 (de) * 2007-06-22 2016-11-03 Advanced Mask Technology Center Gmbh & Co. Kg Maskensubstrat, Photomaske und Verfahren zur Herstellung einer Photomaske
CN102203906B (zh) * 2008-10-30 2013-10-09 旭硝子株式会社 Euv光刻用反射型掩模坯料
JP5658435B2 (ja) * 2009-03-31 2015-01-28 リンテック株式会社 マスクフィルム用部材、それを用いたマスクフィルムの製造方法及び感光性樹脂印刷版の製造方法
JP5201361B2 (ja) * 2009-05-15 2013-06-05 信越化学工業株式会社 フォトマスクブランクの加工方法
JP2012002908A (ja) * 2010-06-15 2012-01-05 Toshiba Corp フォトマスク
KR20120069006A (ko) * 2010-11-02 2012-06-28 삼성전기주식회사 포토마스크
JP2011228743A (ja) * 2011-07-26 2011-11-10 Toppan Printing Co Ltd 反射型フォトマスクブランク、反射型フォトマスク、ならびにこれを用いたパターン転写方法
JP5474129B2 (ja) * 2012-05-24 2014-04-16 信越化学工業株式会社 半透明積層膜の設計方法およびフォトマスクブランクの製造方法
JP5701946B2 (ja) * 2013-08-14 2015-04-15 Hoya株式会社 位相シフトマスクの製造方法
US11187972B2 (en) 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
JP6998181B2 (ja) 2017-11-14 2022-02-04 アルバック成膜株式会社 マスクブランク、位相シフトマスクおよびその製造方法
TWI711878B (zh) * 2018-03-15 2020-12-01 日商大日本印刷股份有限公司 大型光罩
JP7254599B2 (ja) * 2019-04-15 2023-04-10 アルバック成膜株式会社 マスクブランクスの製造方法および位相シフトマスクの製造方法
JP7303077B2 (ja) 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
JP7331793B2 (ja) 2020-06-30 2023-08-23 信越化学工業株式会社 フォトマスクの製造方法及びフォトマスクブランク

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JP4088742B2 (ja) * 2000-12-26 2008-05-21 信越化学工業株式会社 フォトマスクブランクス、フォトマスク及びフォトマスクブランクスの製造方法
JP4696365B2 (ja) * 2001-01-30 2011-06-08 凸版印刷株式会社 レベンソン型位相シフトマスク
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US7166392B2 (en) * 2002-03-01 2007-01-23 Hoya Corporation Halftone type phase shift mask blank and halftone type phase shift mask
EP2317383A3 (en) 2002-04-11 2011-12-28 HOYA Corporation Reflective mask blank, reflective mask and methods of producing the mask blank and the mask
JP4212025B2 (ja) 2002-07-04 2009-01-21 Ｈｏｙａ株式会社 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法

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US9768086B2 (en) 2004-06-04 2017-09-19 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US12074213B2 (en) 2004-06-04 2024-08-27 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US8664699B2 (en) 2004-06-04 2014-03-04 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US11456258B2 (en) 2004-06-04 2022-09-27 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US11088268B2 (en) 2004-06-04 2021-08-10 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US10374072B2 (en) 2004-06-04 2019-08-06 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US9105555B2 (en) 2004-06-04 2015-08-11 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US10204864B2 (en) 2004-06-04 2019-02-12 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US9450043B2 (en) 2004-06-04 2016-09-20 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
US9515025B2 (en) 2004-06-04 2016-12-06 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US9761444B2 (en) 2004-06-04 2017-09-12 The Board Of Trustees Of The University Of Illinois Methods and devices for fabricating and assembling printable semiconductor elements
TWI420237B (zh) * 2005-06-02 2013-12-21 美國伊利諾大學理事會 藉由對彈性印模之黏著性動力控制之圖案轉印印刷
TWI451191B (zh) * 2005-12-26 2014-09-01 Ｈｏｙａ股份有限公司 A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device
TWI397766B (zh) * 2005-12-26 2013-06-01 Ｈｏｙａ股份有限公司 A manufacturing method of a mask blank and a mask, and a method of manufacturing the semiconductor device
TWI497190B (zh) * 2008-03-31 2015-08-21 Ｈｏｙａ股份有限公司 空白光罩、光罩及空白光罩之製造方法
US9075314B2 (en) 2008-03-31 2015-07-07 Hoya Corporation Photomask blank, photomask, and method for manufacturing photomask blank
TWI422963B (zh) * 2008-05-01 2014-01-11 Ｈｏｙａ股份有限公司 多階調光罩及其製造方法、及圖案轉印方法
TWI468851B (zh) * 2009-06-11 2015-01-11 信越化學工業股份有限公司 光罩之製造方法
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing

Also Published As

Publication number Publication date
KR101029162B1 (ko) 2011-04-12
KR20090057316A (ko) 2009-06-04
DE112004000235T5 (de) 2006-01-12
JPWO2004070472A1 (ja) 2006-05-25
KR20050096174A (ko) 2005-10-05
JP2009163264A (ja) 2009-07-23
TW200424750A (en) 2004-11-16
KR101049624B1 (ko) 2011-07-15
KR100960193B1 (ko) 2010-05-27
JP4451391B2 (ja) 2010-04-14
JP4907688B2 (ja) 2012-04-04
WO2004070472A1 (ja) 2004-08-19
KR20100012872A (ko) 2010-02-08
DE112004000235B4 (de) 2018-12-27
US20120034553A1 (en) 2012-02-09
US20060057469A1 (en) 2006-03-16

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