JP4451391B2 - フォトマスクブランク及びフォトマスク、並びにフォトマスクを用いたパターン転写方法 - Google Patents

フォトマスクブランク及びフォトマスク、並びにフォトマスクを用いたパターン転写方法 Download PDF

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Publication number
JP4451391B2
JP4451391B2 JP2005504812A JP2005504812A JP4451391B2 JP 4451391 B2 JP4451391 B2 JP 4451391B2 JP 2005504812 A JP2005504812 A JP 2005504812A JP 2005504812 A JP2005504812 A JP 2005504812A JP 4451391 B2 JP4451391 B2 JP 4451391B2
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JP
Japan
Prior art keywords
film
photomask
photomask blank
light
antireflection film
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Expired - Lifetime
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JP2005504812A
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English (en)
Japanese (ja)
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JPWO2004070472A1 (ja
Inventor
光浩 暮石
英明 三ツ井
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2043—Photolithographic processes using an anti-reflective coating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
JP2005504812A 2003-02-03 2004-02-02 フォトマスクブランク及びフォトマスク、並びにフォトマスクを用いたパターン転写方法 Expired - Lifetime JP4451391B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003025485 2003-02-03
JP2003025485 2003-02-03
PCT/JP2004/000992 WO2004070472A1 (ja) 2003-02-03 2004-02-02 フォトマスクブランク及びフォトマスク、並びにフォトマスクを用いたパターン転写方法

Related Child Applications (1)

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JP2009102116A Division JP4907688B2 (ja) 2003-02-03 2009-04-20 フォトマスクブランク及びフォトマスク、並びにフォトマスクを用いたパターン転写方法

Publications (2)

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JPWO2004070472A1 JPWO2004070472A1 (ja) 2006-05-25
JP4451391B2 true JP4451391B2 (ja) 2010-04-14

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JP2005504812A Expired - Lifetime JP4451391B2 (ja) 2003-02-03 2004-02-02 フォトマスクブランク及びフォトマスク、並びにフォトマスクを用いたパターン転写方法
JP2009102116A Expired - Fee Related JP4907688B2 (ja) 2003-02-03 2009-04-20 フォトマスクブランク及びフォトマスク、並びにフォトマスクを用いたパターン転写方法

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Country Status (6)

Country Link
US (2) US20060057469A1 (https=)
JP (2) JP4451391B2 (https=)
KR (3) KR101049624B1 (https=)
DE (1) DE112004000235B4 (https=)
TW (1) TWI229780B (https=)
WO (1) WO2004070472A1 (https=)

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TWI375114B (en) 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
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JP5178996B2 (ja) * 2005-06-23 2013-04-10 凸版印刷株式会社 反射型フォトマスクブランク、反射型フォトマスク、ならびにこれを用いたパターン転写方法
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JP5372403B2 (ja) * 2008-05-01 2013-12-18 Ｈｏｙａ株式会社 多階調フォトマスク、及びパターン転写方法
CN102203906B (zh) * 2008-10-30 2013-10-09 旭硝子株式会社 Euv光刻用反射型掩模坯料
JP5658435B2 (ja) * 2009-03-31 2015-01-28 リンテック株式会社 マスクフィルム用部材、それを用いたマスクフィルムの製造方法及び感光性樹脂印刷版の製造方法
JP5201361B2 (ja) * 2009-05-15 2013-06-05 信越化学工業株式会社 フォトマスクブランクの加工方法
JP5257256B2 (ja) * 2009-06-11 2013-08-07 信越化学工業株式会社 フォトマスクの製造方法
JP2012002908A (ja) * 2010-06-15 2012-01-05 Toshiba Corp フォトマスク
KR20120069006A (ko) * 2010-11-02 2012-06-28 삼성전기주식회사 포토마스크
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JP2011228743A (ja) * 2011-07-26 2011-11-10 Toppan Printing Co Ltd 反射型フォトマスクブランク、反射型フォトマスク、ならびにこれを用いたパターン転写方法
JP5474129B2 (ja) * 2012-05-24 2014-04-16 信越化学工業株式会社 半透明積層膜の設計方法およびフォトマスクブランクの製造方法
JP5701946B2 (ja) * 2013-08-14 2015-04-15 Hoya株式会社 位相シフトマスクの製造方法
US11187972B2 (en) 2016-10-21 2021-11-30 Hoya Corporation Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device
JP6998181B2 (ja) 2017-11-14 2022-02-04 アルバック成膜株式会社 マスクブランク、位相シフトマスクおよびその製造方法
TWI711878B (zh) * 2018-03-15 2020-12-01 日商大日本印刷股份有限公司 大型光罩
JP7254599B2 (ja) * 2019-04-15 2023-04-10 アルバック成膜株式会社 マスクブランクスの製造方法および位相シフトマスクの製造方法
JP7303077B2 (ja) 2019-09-10 2023-07-04 アルバック成膜株式会社 マスクブランクスの製造方法及びフォトマスクの製造方法、マスクブランクス及びフォトマスク
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Also Published As

Publication number Publication date
KR101029162B1 (ko) 2011-04-12
KR20090057316A (ko) 2009-06-04
DE112004000235T5 (de) 2006-01-12
JPWO2004070472A1 (ja) 2006-05-25
KR20050096174A (ko) 2005-10-05
JP2009163264A (ja) 2009-07-23
TWI229780B (en) 2005-03-21
TW200424750A (en) 2004-11-16
KR101049624B1 (ko) 2011-07-15
KR100960193B1 (ko) 2010-05-27
JP4907688B2 (ja) 2012-04-04
WO2004070472A1 (ja) 2004-08-19
KR20100012872A (ko) 2010-02-08
DE112004000235B4 (de) 2018-12-27
US20120034553A1 (en) 2012-02-09
US20060057469A1 (en) 2006-03-16

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