DE69132303T2 - Maske für Photolithographie - Google Patents

Maske für Photolithographie

Info

Publication number
DE69132303T2
DE69132303T2 DE69132303T DE69132303T DE69132303T2 DE 69132303 T2 DE69132303 T2 DE 69132303T2 DE 69132303 T DE69132303 T DE 69132303T DE 69132303 T DE69132303 T DE 69132303T DE 69132303 T2 DE69132303 T2 DE 69132303T2
Authority
DE
Germany
Prior art keywords
photolithography
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69132303T
Other languages
English (en)
Other versions
DE69132303D1 (de
Inventor
Katsuji Iguchi
Takashi Fukushima
Hiroki Tabuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE69132303D1 publication Critical patent/DE69132303D1/de
Publication of DE69132303T2 publication Critical patent/DE69132303T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
DE69132303T 1990-04-19 1991-04-19 Maske für Photolithographie Expired - Lifetime DE69132303T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10583290 1990-04-19
JP17192090A JP2566048B2 (ja) 1990-04-19 1990-06-28 光露光用マスク及びその製造方法

Publications (2)

Publication Number Publication Date
DE69132303D1 DE69132303D1 (de) 2000-08-17
DE69132303T2 true DE69132303T2 (de) 2000-12-21

Family

ID=26446055

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132303T Expired - Lifetime DE69132303T2 (de) 1990-04-19 1991-04-19 Maske für Photolithographie

Country Status (5)

Country Link
US (1) US5389474A (de)
EP (1) EP0453310B1 (de)
JP (1) JP2566048B2 (de)
KR (1) KR940007788B1 (de)
DE (1) DE69132303T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0843217A3 (de) * 1990-09-10 1998-12-16 Fujitsu Limited Optische Phasenmaske und Verfahren zur Herstellung
EP0524741A1 (de) * 1991-07-12 1993-01-27 Motorola, Inc. Verfahren zur Erhöhung der Bildauflösung einer Maske für die Herstellung von Halbleiterschaltungen
US5281500A (en) * 1991-09-04 1994-01-25 Micron Technology, Inc. Method of preventing null formation in phase shifted photomasks
JP2759582B2 (ja) * 1991-09-05 1998-05-28 三菱電機株式会社 フォトマスクおよびその製造方法
US5382483A (en) * 1992-01-13 1995-01-17 International Business Machines Corporation Self-aligned phase-shifting mask
EP0553543B1 (de) * 1992-01-31 1997-12-29 Mitsubishi Denki Kabushiki Kaisha Phasenverschiebungsmaske und Verfahren zur Erzeugung eines Fotolackmusters unter Verwendung dieser Maske
KR100263900B1 (ko) * 1993-03-04 2000-09-01 윤종용 마스크 및 그 제조방법
US5642183A (en) * 1993-08-27 1997-06-24 Sharp Kabushiki Kaisha Spatial filter used in a reduction-type projection printing apparatus
US5532089A (en) * 1993-12-23 1996-07-02 International Business Machines Corporation Simplified fabrication methods for rim phase-shift masks
TW270219B (de) * 1994-05-31 1996-02-11 Advanced Micro Devices Inc
US5566011A (en) * 1994-12-08 1996-10-15 Luncent Technologies Inc. Antiflector black matrix having successively a chromium oxide layer, a molybdenum layer and a second chromium oxide layer
US5989752A (en) * 1996-05-29 1999-11-23 Chiu; Tzu-Yin Reconfigurable mask
KR100230376B1 (ko) * 1996-10-16 1999-11-15 윤종용 위상 시프트 마스크 및 그 제조방법
JP3080023B2 (ja) * 1997-02-20 2000-08-21 日本電気株式会社 露光用フォトマスク
TW497165B (en) * 1999-06-30 2002-08-01 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device, optical mask used therefor, method for manufacturing the same, and mask blanks used therefor
JP3760086B2 (ja) * 2000-07-07 2006-03-29 株式会社ルネサステクノロジ フォトマスクの製造方法
TW541605B (en) * 2000-07-07 2003-07-11 Hitachi Ltd Fabrication method of semiconductor integrated circuit device
JP2002184669A (ja) 2000-12-14 2002-06-28 Hitachi Ltd 半導体集積回路装置の製造方法
JP2002196470A (ja) 2000-12-26 2002-07-12 Hitachi Ltd フォトマスクの製造方法および半導体集積回路装置の製造方法
JP2002202585A (ja) 2000-12-27 2002-07-19 Hitachi Ltd フォトマスクの製造方法および半導体集積回路装置の製造方法
JP3827544B2 (ja) 2001-08-31 2006-09-27 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP2003121977A (ja) * 2001-10-12 2003-04-23 Hitachi Ltd 半導体集積回路装置の製造方法およびマスク
JP2003287875A (ja) * 2002-01-24 2003-10-10 Hitachi Ltd マスクの製造方法および半導体集積回路装置の製造方法
JP3754378B2 (ja) * 2002-02-14 2006-03-08 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
CN106154743B (zh) * 2015-03-24 2019-11-01 中芯国际集成电路制造(上海)有限公司 掩模及其形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986876A (en) * 1974-05-24 1976-10-19 The United States Of America As Represented By The Secretary Of The Navy Method for making a mask having a sloped relief
JPS55163539A (en) * 1979-06-06 1980-12-19 Nec Kyushu Ltd Photo mask
DE3015142A1 (de) * 1980-04-19 1981-12-03 Deutsche Itt Industries Gmbh, 7800 Freiburg Photomaske, verfahren zur herstellung sowie deren verwendung zur erzeugung kleiner halbleiterstrukturen
JPS576849A (en) * 1980-06-13 1982-01-13 Matsushita Electric Ind Co Ltd Photomask and its preparation
JPS5741639A (en) * 1980-08-25 1982-03-08 Fujitsu Ltd Treatment of photomask to provide electric conductivity
JPS5760335A (en) * 1980-09-29 1982-04-12 Hitachi Ltd Exposure mask
JPS59143156A (ja) * 1983-02-07 1984-08-16 Seiko Epson Corp ガラス・マスク
JPS60128447A (ja) * 1983-12-14 1985-07-09 Fujitsu Ltd フオトマスク
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
DE69033996T2 (de) * 1989-04-28 2002-12-05 Fujitsu Ltd Maske, Verfahren zur Herstellung der Maske und Verfahren zur Musterherstellung mit einer Maske
JPH03172848A (ja) * 1989-12-01 1991-07-26 Mitsubishi Electric Corp ホトマスクの製造方法
JPH03172847A (ja) * 1989-12-01 1991-07-26 Mitsubishi Electric Corp ホトマスクの製造方法
JPH03211554A (ja) * 1990-01-17 1991-09-17 Fujitsu Ltd 位相シフトマスクの製造方法

Also Published As

Publication number Publication date
US5389474A (en) 1995-02-14
EP0453310B1 (de) 2000-07-12
JP2566048B2 (ja) 1996-12-25
EP0453310A1 (de) 1991-10-23
KR940007788B1 (ko) 1994-08-25
JPH043412A (ja) 1992-01-08
DE69132303D1 (de) 2000-08-17

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Legal Events

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