DE69325417T2 - Verfahren zur Herstellung von Photomasken mit einer Phasenverschiebringsschicht - Google Patents

Verfahren zur Herstellung von Photomasken mit einer Phasenverschiebringsschicht

Info

Publication number
DE69325417T2
DE69325417T2 DE69325417T DE69325417T DE69325417T2 DE 69325417 T2 DE69325417 T2 DE 69325417T2 DE 69325417 T DE69325417 T DE 69325417T DE 69325417 T DE69325417 T DE 69325417T DE 69325417 T2 DE69325417 T2 DE 69325417T2
Authority
DE
Germany
Prior art keywords
photomasks
production
phase shift
shift layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325417T
Other languages
English (en)
Other versions
DE69325417D1 (de
Inventor
Hiroshi Fujita
Masaaki Kurihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP20343692A external-priority patent/JP3241809B2/ja
Priority claimed from JP04236890A external-priority patent/JP3130672B2/ja
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Application granted granted Critical
Publication of DE69325417D1 publication Critical patent/DE69325417D1/de
Publication of DE69325417T2 publication Critical patent/DE69325417T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69325417T 1992-07-30 1993-07-30 Verfahren zur Herstellung von Photomasken mit einer Phasenverschiebringsschicht Expired - Fee Related DE69325417T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20343692A JP3241809B2 (ja) 1992-07-30 1992-07-30 位相シフト層を有するフォトマスクの製造方法
JP04236890A JP3130672B2 (ja) 1992-09-04 1992-09-04 フォトマスクパターンの形成方法

Publications (2)

Publication Number Publication Date
DE69325417D1 DE69325417D1 (de) 1999-07-29
DE69325417T2 true DE69325417T2 (de) 1999-11-18

Family

ID=26513918

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69325417T Expired - Fee Related DE69325417T2 (de) 1992-07-30 1993-07-30 Verfahren zur Herstellung von Photomasken mit einer Phasenverschiebringsschicht
DE69334347T Expired - Lifetime DE69334347D1 (de) 1992-07-30 1993-07-30 Verfahren zur Herstellung einer Fotomaske mit einer Phasenschieberschicht

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69334347T Expired - Lifetime DE69334347D1 (de) 1992-07-30 1993-07-30 Verfahren zur Herstellung einer Fotomaske mit einer Phasenschieberschicht

Country Status (4)

Country Link
US (1) US5380609A (de)
EP (2) EP0907105B1 (de)
KR (1) KR100298609B1 (de)
DE (2) DE69325417T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970004429B1 (ko) * 1993-10-29 1997-03-27 현대전자산업 주식회사 위상 반전 마스크 및 그 제조 방법
JP3351485B2 (ja) * 1993-12-10 2002-11-25 富士通株式会社 位相シフトマスクの製造方法
US5536603A (en) * 1993-12-21 1996-07-16 Kabushiki Kaisha Toshiba Phase shift mask and method of fabricating the same
KR0128827B1 (ko) * 1993-12-31 1998-04-07 김주용 위상반전마스크 제조방법
KR970005675B1 (en) * 1994-01-19 1997-04-18 Hyundai Electronics Ind Fabrication method of phase shift mask
KR0143707B1 (ko) * 1994-06-23 1998-08-17 김주용 마스크 가장자리에서 투과되는 광의 강도를 보상하기 위한 위상반전 마스크
US6096484A (en) * 1997-10-15 2000-08-01 Kabushiki Kaisha Toshiba Pattern forming method using chemically amplified resist and apparatus for treating chemically amplified resist
US6358672B2 (en) * 1998-02-05 2002-03-19 Samsung Electronics Co., Ltd. Method of forming semiconductor device pattern including cross-linking and flow baking a positive photoresist
KR100307631B1 (ko) * 1999-06-01 2001-09-29 윤종용 반도체소자의 미세패턴 형성방법
KR100309209B1 (ko) * 1999-07-31 2001-09-29 구본준, 론 위라하디락사 액정 표시장치 제조방법 및 그 제조방법에 따른 액정표시장치
US7115523B2 (en) * 2000-05-22 2006-10-03 Applied Materials, Inc. Method and apparatus for etching photomasks
US6645677B1 (en) * 2000-09-18 2003-11-11 Micronic Laser Systems Ab Dual layer reticle blank and manufacturing process
US7150854B2 (en) * 2002-03-19 2006-12-19 Engelhard Corporation Device for generating aqueous chlorine dioxide solutions
US7399709B1 (en) * 2002-09-27 2008-07-15 Taiwan Semiconductor Manufacturing Co., Ltd. Complementary replacement of material
US6924069B2 (en) * 2003-01-15 2005-08-02 Taiwan Semiconductor Manufacturing Co., Ltd Method for repairing attenuated phase shift masks
CN1983028B (zh) * 2003-09-29 2012-07-25 Hoya株式会社 掩膜坯及变换掩膜的制造方法
JP2007149768A (ja) * 2005-11-24 2007-06-14 Nec Electronics Corp 半導体装置の製造方法
JP4678383B2 (ja) * 2007-03-29 2011-04-27 信越化学工業株式会社 化学増幅ネガ型レジスト組成物及びパターン形成方法
WO2021167896A1 (en) 2020-02-19 2021-08-26 Thermo Electron Scientific Instruments Llc Phase mask for structured illumination

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3712335A1 (de) * 1987-04-11 1988-10-20 Vdo Schindling Verfahren zur herstellung einer struktur
US4948706A (en) * 1987-12-30 1990-08-14 Hoya Corporation Process for producing transparent substrate having thereon transparent conductive pattern elements separated by light-shielding insulating film, and process for producing surface-colored material
EP0773477B1 (de) * 1990-09-21 2001-05-30 Dai Nippon Printing Co., Ltd. Verfahren zur Herstellung einer Phasenschieber-Fotomaske
US5244759A (en) * 1991-02-27 1993-09-14 At&T Bell Laboratories Single-alignment-level lithographic technique for achieving self-aligned features
SG50543A1 (en) * 1991-11-22 1998-07-20 At & T Corp Fabrication of phase-shifting lithographic masks

Also Published As

Publication number Publication date
KR100298609B1 (ko) 2001-11-30
KR940006195A (ko) 1994-03-23
EP0907105B1 (de) 2010-12-15
EP0907105A3 (de) 1999-11-24
EP0581302B1 (de) 1999-06-23
EP0907105A2 (de) 1999-04-07
EP0581302A3 (en) 1996-09-11
EP0581302A2 (de) 1994-02-02
DE69325417D1 (de) 1999-07-29
US5380609A (en) 1995-01-10
DE69334347D1 (de) 2011-01-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee