DE10210899A1 - Refraktives Projektionsobjektiv für Immersions-Lithographie - Google Patents

Refraktives Projektionsobjektiv für Immersions-Lithographie

Info

Publication number
DE10210899A1
DE10210899A1 DE10210899A DE10210899A DE10210899A1 DE 10210899 A1 DE10210899 A1 DE 10210899A1 DE 10210899 A DE10210899 A DE 10210899A DE 10210899 A DE10210899 A DE 10210899A DE 10210899 A1 DE10210899 A1 DE 10210899A1
Authority
DE
Germany
Prior art keywords
lens
lens group
projection
refractive power
lenses
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE10210899A
Other languages
German (de)
English (en)
Inventor
Hans-Juergen Rostalski
Wilhelm Ulrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
Original Assignee
Carl Zeiss SMT GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss SMT GmbH filed Critical Carl Zeiss SMT GmbH
Priority to DE10210899A priority Critical patent/DE10210899A1/de
Priority to JP2003575189A priority patent/JP2005519347A/ja
Priority to EP02738025A priority patent/EP1483625A1/de
Priority to PCT/EP2002/004846 priority patent/WO2003077036A1/de
Priority to AU2002312872A priority patent/AU2002312872A1/en
Priority to CNB038055759A priority patent/CN100573222C/zh
Priority to KR1020047014023A priority patent/KR100991590B1/ko
Priority to PCT/EP2003/001954 priority patent/WO2003077037A1/en
Priority to EP03717197A priority patent/EP1485760A1/en
Priority to AU2003221490A priority patent/AU2003221490A1/en
Priority to JP2003575190A priority patent/JP2005519348A/ja
Priority to US10/379,809 priority patent/US6891596B2/en
Publication of DE10210899A1 publication Critical patent/DE10210899A1/de
Priority to US10/886,696 priority patent/US7092069B2/en
Priority to US10/935,321 priority patent/US7203008B2/en
Priority to US11/085,602 priority patent/US7312847B2/en
Priority to US11/723,441 priority patent/US7495840B2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
    • G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B9/00—Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or -
    • G02B9/60—Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or - having five components only
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Lenses (AREA)
DE10210899A 2002-03-08 2002-03-08 Refraktives Projektionsobjektiv für Immersions-Lithographie Withdrawn DE10210899A1 (de)

Priority Applications (16)

Application Number Priority Date Filing Date Title
DE10210899A DE10210899A1 (de) 2002-03-08 2002-03-08 Refraktives Projektionsobjektiv für Immersions-Lithographie
JP2003575189A JP2005519347A (ja) 2002-03-08 2002-05-03 最大開口型の投影対物レンズ
EP02738025A EP1483625A1 (de) 2002-03-08 2002-05-03 Projektionsobjektiv höchster apertur
PCT/EP2002/004846 WO2003077036A1 (de) 2002-03-08 2002-05-03 Projektionsobjektiv höchster apertur
AU2002312872A AU2002312872A1 (en) 2002-03-08 2002-05-03 High-aperture projection lens
PCT/EP2003/001954 WO2003077037A1 (en) 2002-03-08 2003-02-26 Refractive projection objective for immersion lithography
KR1020047014023A KR100991590B1 (ko) 2002-03-08 2003-02-26 침지 리소그래피용 굴절 투영 대물렌즈
CNB038055759A CN100573222C (zh) 2002-03-08 2003-02-26 用于浸液式光刻的折射投影物镜
EP03717197A EP1485760A1 (en) 2002-03-08 2003-02-26 Refractive projection objective for immersion lithography
AU2003221490A AU2003221490A1 (en) 2002-03-08 2003-02-26 Refractive projection objective for immersion lithography
JP2003575190A JP2005519348A (ja) 2002-03-08 2003-02-26 液浸リソグラフィ用の屈折投影対物レンズ
US10/379,809 US6891596B2 (en) 2002-03-08 2003-03-06 Refractive projection objective for immersion lithography
US10/886,696 US7092069B2 (en) 2002-03-08 2004-07-09 Projection exposure method and projection exposure system
US10/935,321 US7203008B2 (en) 2002-03-08 2004-09-08 Very high-aperture projection objective
US11/085,602 US7312847B2 (en) 2002-03-08 2005-03-22 Refractive projection objective for immersion lithography
US11/723,441 US7495840B2 (en) 2002-03-08 2007-03-20 Very high-aperture projection objective

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10210899A DE10210899A1 (de) 2002-03-08 2002-03-08 Refraktives Projektionsobjektiv für Immersions-Lithographie

Publications (1)

Publication Number Publication Date
DE10210899A1 true DE10210899A1 (de) 2003-09-18

Family

ID=27762884

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10210899A Withdrawn DE10210899A1 (de) 2002-03-08 2002-03-08 Refraktives Projektionsobjektiv für Immersions-Lithographie

Country Status (8)

Country Link
US (4) US6891596B2 (https=)
EP (2) EP1483625A1 (https=)
JP (2) JP2005519347A (https=)
KR (1) KR100991590B1 (https=)
CN (1) CN100573222C (https=)
AU (2) AU2002312872A1 (https=)
DE (1) DE10210899A1 (https=)
WO (2) WO2003077036A1 (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10308610A1 (de) * 2003-02-27 2004-09-16 Carl Zeiss Immersionsflüssigkeit für die Mikroskopie bei Wasserimmersion
WO2005050321A1 (de) * 2003-10-22 2005-06-02 Carl Zeiss Smt Ag Refraktives projektionsobjektiv für die immersions-lithographie
WO2006125617A2 (en) 2005-05-27 2006-11-30 Carl Zeiss Smt Ag Method for improving the imaging properties of a projection objective, and such a projection objective
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
US7209292B2 (en) 2002-12-09 2007-04-24 Carl Zeiss Smt Ag Projection objective, especially for microlithography, and method for adjusting a projection objective
US7463423B2 (en) 2005-06-14 2008-12-09 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
US7501367B2 (en) 2005-04-15 2009-03-10 Heraeus Quarzglas Gmbh & Co. Kg Optical component of quartz glass, method for producing said component, and method for exposing a substrate
DE102023204235A1 (de) * 2023-05-08 2024-11-14 Carl Zeiss Smt Gmbh Lithographiesystem mit abspaltbaren Linsen

Families Citing this family (255)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US7203007B2 (en) * 2000-05-04 2007-04-10 Carl Zeiss Smt Ag Projection exposure machine comprising a projection lens
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
DE10229249A1 (de) 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Refraktives Projektionsobjektiv mit einer Taille
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
JP2005536775A (ja) * 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
SG121822A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI255971B (en) 2002-11-29 2006-06-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101872135B (zh) * 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
EP1571695A4 (en) 2002-12-10 2008-10-15 Nikon Corp EXPOSURE DEVICE AND METHOD FOR PRODUCING THE DEVICE
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
SG171468A1 (en) * 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
AU2003289271A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
EP2466621B1 (en) 2003-02-26 2015-04-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101181688B1 (ko) 2003-03-25 2012-09-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4902201B2 (ja) 2003-04-07 2012-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR20170018113A (ko) 2003-04-09 2017-02-15 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
WO2004093159A2 (en) 2003-04-09 2004-10-28 Nikon Corporation Immersion lithography fluid control system
JP4656057B2 (ja) * 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
WO2004090634A2 (en) * 2003-04-10 2004-10-21 Nikon Corporation Environmental system including vaccum scavange for an immersion lithography apparatus
EP2921905B1 (en) 2003-04-10 2017-12-27 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
KR101177330B1 (ko) 2003-04-10 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 장치
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
KR101159564B1 (ko) 2003-04-11 2012-06-25 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
KR20170016014A (ko) 2003-04-11 2017-02-10 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
ATE542167T1 (de) 2003-04-17 2012-02-15 Nikon Corp Lithographisches immersionsgerät
SG10201405231YA (en) 2003-05-06 2014-09-26 Nippon Kogaku Kk Projection optical system, exposure apparatus, and exposure method
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100437358C (zh) 2003-05-15 2008-11-26 株式会社尼康 曝光装置及器件制造方法
TWI421911B (zh) 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
TWI424470B (zh) 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
CN100541717C (zh) 2003-05-28 2009-09-16 株式会社尼康 曝光方法、曝光装置以及器件制造方法
TWI347741B (en) 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261742A3 (en) * 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
KR101520591B1 (ko) 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
TWI515770B (zh) 2003-06-19 2016-01-01 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1498778A1 (en) 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1975721A1 (en) * 2003-06-30 2008-10-01 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1494074A1 (en) 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005006026A2 (en) * 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
EP2466382B1 (en) 2003-07-08 2014-11-26 Nikon Corporation Wafer table for immersion lithography
ATE513309T1 (de) 2003-07-09 2011-07-15 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementeherstellung
WO2005006416A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 結合装置、露光装置、及びデバイス製造方法
WO2005006418A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
SG109000A1 (en) 2003-07-16 2005-02-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1500982A1 (en) 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1650787A4 (en) 2003-07-25 2007-09-19 Nikon Corp INVESTIGATION METHOD AND INVESTIGATION DEVICE FOR AN OPTICAL PROJECTION SYSTEM AND METHOD OF MANUFACTURING AN OPTICAL PROJECTION SYSTEM
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
CN102043350B (zh) 2003-07-28 2014-01-29 株式会社尼康 曝光装置、器件制造方法、及曝光装置的控制方法
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
EP2278402B1 (en) 2003-08-26 2013-03-06 Nikon Corporation Exposure apparatus
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2261740B1 (en) 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
CN100407371C (zh) 2003-08-29 2008-07-30 株式会社尼康 曝光装置和器件加工方法
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101523180B1 (ko) 2003-09-03 2015-05-26 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
WO2005033800A1 (de) 2003-09-09 2005-04-14 Carl Zeiss Smt Ag Lithographie-objektiv und projektionsbelichtungsanlage mit mindestens einem solchen lithographie-objektiv
WO2005029559A1 (ja) 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
KR101664642B1 (ko) 2003-09-29 2016-10-11 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
EP1519230A1 (en) 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60302897T2 (de) * 2003-09-29 2006-08-03 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US7158211B2 (en) 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1860585B (zh) * 2003-09-29 2010-04-28 株式会社尼康 液浸型透镜系统和投影曝光装置
US7056646B1 (en) 2003-10-01 2006-06-06 Advanced Micro Devices, Inc. Use of base developers as immersion lithography fluid
ITMI20031914A1 (it) * 2003-10-03 2005-04-04 Solvay Solexis Spa Perfluoropolieteri.
JP2005136364A (ja) 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
WO2005036621A1 (ja) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. 基板搬送装置及び基板搬送方法、露光装置及び露光方法、デバイス製造方法
EP1672682A4 (en) 2003-10-08 2008-10-15 Zao Nikon Co Ltd SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
TWI598934B (zh) 2003-10-09 2017-09-11 尼康股份有限公司 Exposure apparatus, exposure method, and device manufacturing method
EP1524557A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW201834020A (zh) 2003-10-28 2018-09-16 日商尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
US7113259B2 (en) * 2003-10-31 2006-09-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW201809801A (zh) 2003-11-20 2018-03-16 日商尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法、以及元件製造方法
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2040123B9 (en) * 2003-12-02 2012-11-14 Carl Zeiss SMT GmbH Projection optical system
EP2717295B1 (en) 2003-12-03 2018-07-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
JP5106858B2 (ja) * 2003-12-15 2012-12-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 高開口数と平面状端面とを有する投影対物レンズ
DE602004030481D1 (de) 2003-12-15 2011-01-20 Nippon Kogaku Kk Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
JP2007516613A (ja) * 2003-12-15 2007-06-21 カール・ツアイス・エスエムテイ・アーゲー 少なくとも１つの液体レンズを備えるマイクロリソグラフィー投影対物レンズとしての対物レンズ
KR101111363B1 (ko) * 2003-12-15 2012-04-12 가부시키가이샤 니콘 투영노광장치 및 스테이지 장치, 그리고 노광방법
JP2005189850A (ja) * 2003-12-15 2005-07-14 Carl Zeiss Smt Ag 液浸リソグラフィー用屈折性投影対物レンズ
US7466489B2 (en) 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
CN1938646B (zh) 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
TWI259319B (en) 2004-01-23 2006-08-01 Air Prod & Chem Immersion lithography fluids
US20050161644A1 (en) 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
EP1713114B1 (en) 2004-02-03 2018-09-19 Nikon Corporation Exposure apparatus and device manufacturing method
JP2007520893A (ja) * 2004-02-03 2007-07-26 ロチェスター インスティテュート オブ テクノロジー 流体を使用したフォトリソグラフィ法及びそのシステム
TWI389174B (zh) 2004-02-06 2013-03-11 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100592210C (zh) * 2004-02-13 2010-02-24 卡尔蔡司Smt股份公司 微平版印刷投影曝光装置的投影物镜
WO2005081067A1 (en) * 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US7741012B1 (en) 2004-03-01 2010-06-22 Advanced Micro Devices, Inc. Method for removal of immersion lithography medium in immersion lithography processes
US7215431B2 (en) 2004-03-04 2007-05-08 Therma-Wave, Inc. Systems and methods for immersion metrology
US8488102B2 (en) * 2004-03-18 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
KR101851511B1 (ko) 2004-03-25 2018-04-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4510494B2 (ja) * 2004-03-29 2010-07-21 キヤノン株式会社 露光装置
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005098504A1 (en) 2004-04-08 2005-10-20 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005103788A1 (de) * 2004-04-26 2005-11-03 Carl Zeiss Smt Ag Verfahren zum verbinden eines optischen elements mit einer haltestruktur
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (en) 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US20060244938A1 (en) * 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
KR101376931B1 (ko) 2004-05-17 2014-03-25 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050260528A1 (en) * 2004-05-22 2005-11-24 Hynix Semiconductor Inc. Liquid composition for immersion lithography and lithography method using the same
KR101248328B1 (ko) * 2004-06-04 2013-04-01 칼 짜이스 에스엠티 게엠베하 강도 변동이 보상된 투사 시스템 및 이를 위한 보상 요소
EP1774405B1 (en) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH System for measuring the image quality of an optical imaging system
WO2005122218A1 (ja) 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
KR20070026603A (ko) * 2004-06-10 2007-03-08 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
US7481867B2 (en) 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
DE102004031688B4 (de) * 2004-06-30 2006-06-14 Infineon Technologies Ag Verfahren zur Anpassung von Strukturabmessungen bei der photolithographischen Projektion eines Musters von Strukturelementen auf einen Halbleiterwafer
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101433491B1 (ko) * 2004-07-12 2014-08-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7161663B2 (en) 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1626571A1 (en) * 2004-08-13 2006-02-15 STMicroelectronics Limited Imaging assembly
KR20070048164A (ko) 2004-08-18 2007-05-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
US7301707B2 (en) * 2004-09-03 2007-11-27 Carl Zeiss Smt Ag Projection optical system and method
US7529030B2 (en) * 2004-09-06 2009-05-05 Olympus Corporation Optical apparatus with optical element made of a medium exhibiting negative refraction
US7133114B2 (en) 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060060653A1 (en) * 2004-09-23 2006-03-23 Carl Wittenberg Scanner system and method for simultaneously acquiring data images from multiple object planes
US7522261B2 (en) 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7355674B2 (en) 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
WO2006037444A2 (en) * 2004-10-05 2006-04-13 Carl-Zeiss Smt Ag Microlithographic projection exposure apparatus
US7894040B2 (en) 2004-10-05 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7209213B2 (en) 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7508488B2 (en) 2004-10-13 2009-03-24 Carl Zeiss Smt Ag Projection exposure system and method of manufacturing a miniaturized device
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7128427B2 (en) * 2004-11-05 2006-10-31 Sematech, Inc. Method and apparatus for fluid handling in immersion lithography
US20080123074A1 (en) * 2004-11-10 2008-05-29 Nikon Corporation Projection Optical System, Exposure Equipment and Exposure Method
JP4868209B2 (ja) * 2004-11-10 2012-02-01 株式会社ニコン 投影光学系、露光装置、および露光方法
US7583357B2 (en) * 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423720B2 (en) 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7414699B2 (en) 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7145630B2 (en) 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7161654B2 (en) * 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
US7365827B2 (en) 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7508489B2 (en) 2004-12-13 2009-03-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
US7403261B2 (en) 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2008527403A (ja) * 2004-12-30 2008-07-24 カール・ツァイス・エスエムティー・アーゲー 投影光学系
EP1681597B1 (en) 2005-01-14 2010-03-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US20060158615A1 (en) * 2005-01-18 2006-07-20 Williamson David M Catadioptric 1x projection system and method
WO2006080516A1 (ja) * 2005-01-31 2006-08-03 Nikon Corporation 露光装置及びデバイス製造方法
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1720069A2 (en) 2005-04-07 2006-11-08 Carl Zeiss SMT AG Method of manufacturing a projection-optical system
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
DE102006013560A1 (de) * 2005-04-19 2006-10-26 Carl Zeiss Smt Ag Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage sowie Verfahren zu dessen Herstellung
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2660854B1 (en) 2005-05-12 2017-06-21 Nikon Corporation Projection optical system, exposure apparatus and exposure method
US20070013882A1 (en) * 2005-06-07 2007-01-18 Carl Zeiss Smt Ag Method of manufacturing projection objectives and set of projection objectives manufactured by that method
US7385673B2 (en) * 2005-06-10 2008-06-10 International Business Machines Corporation Immersion lithography with equalized pressure on at least projection optics component and wafer
US7262422B2 (en) * 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
US7535644B2 (en) 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
WO2007020004A1 (de) 2005-08-17 2007-02-22 Carl Zeiss Smt Ag Projektionsobjektiv und verfahren zur optimierung einer systemblende eines projektionsobjektivs
US8202460B2 (en) * 2005-09-22 2012-06-19 International Business Machines Corporation Microelectronic substrate having removable edge extension element
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR100768849B1 (ko) * 2005-12-06 2007-10-22 엘지전자 주식회사 계통 연계형 연료전지 시스템의 전원공급장치 및 방법
WO2007071569A1 (en) * 2005-12-23 2007-06-28 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7893047B2 (en) * 2006-03-03 2011-02-22 Arch Chemicals, Inc. Biocide composition comprising pyrithione and pyrrole derivatives
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US8072577B2 (en) 2006-06-05 2011-12-06 Macronix International Co., Ltd. Lithography systems and processes
EP1906251A1 (en) * 2006-09-26 2008-04-02 Carl Zeiss SMT AG Projection exposure method and projection exposure system
US20080084549A1 (en) * 2006-10-09 2008-04-10 Rottmayer Robert E High refractive index media for immersion lithography and method of immersion lithography using same
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8654305B2 (en) 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
DE102008001216A1 (de) * 2007-04-18 2008-10-23 Carl Zeiss Smt Ag Projektionsobjektiv für die Mikrolithographie
WO2008138560A1 (de) * 2007-05-14 2008-11-20 Carl Zeiss Smt Ag Projektionsobjektiv und projektionsbelichtungsanlage für die mikrolithographie
US7760425B2 (en) * 2007-09-05 2010-07-20 Carl Zeiss Smt Ag Chromatically corrected catadioptric objective and projection exposure apparatus including the same
US8451427B2 (en) 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
JP5013119B2 (ja) * 2007-09-20 2012-08-29 信越化学工業株式会社 パターン形成方法並びにこれに用いるレジスト材料
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
CN101681123B (zh) 2007-10-16 2013-06-12 株式会社尼康 照明光学系统、曝光装置以及元件制造方法
SG185313A1 (en) 2007-10-16 2012-11-29 Nikon Corp Illumination optical system, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP5228995B2 (ja) * 2008-03-05 2013-07-03 信越化学工業株式会社 重合性モノマー化合物、パターン形成方法並びにこれに用いるレジスト材料
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
EP2282188B1 (en) 2008-05-28 2015-03-11 Nikon Corporation Illumination optical system and exposure apparatus
JP5253081B2 (ja) * 2008-10-14 2013-07-31 キヤノン株式会社 投影光学系、露光装置及びデバイスの製造方法
JP5218227B2 (ja) * 2008-12-12 2013-06-26 信越化学工業株式会社 パターン形成方法
CA2784148A1 (en) * 2009-12-28 2011-07-28 Pioneer Hi-Bred International, Inc. Sorghum fertility restorer genotypes and methods of marker-assisted selection
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
CN102298198B (zh) * 2010-06-22 2013-05-22 上海微电子装备有限公司 一种大视场光刻投影物镜
US8476004B2 (en) 2011-06-27 2013-07-02 United Microelectronics Corp. Method for forming photoresist patterns
DE102012006244A1 (de) * 2012-03-21 2013-09-26 Jenoptik Optical Systems Gmbh Farbkorrigiertes F-Theta-Objektiv für die Lasermaterialbearbeitung
KR101407076B1 (ko) * 2012-05-24 2014-06-13 주식회사 비엘시스템 근적외선을 이용한 인쇄판 프린터용 고해상도 노광장치
US8701052B1 (en) 2013-01-23 2014-04-15 United Microelectronics Corp. Method of optical proximity correction in combination with double patterning technique
US8627242B1 (en) 2013-01-30 2014-01-07 United Microelectronics Corp. Method for making photomask layout
JP5664697B2 (ja) * 2013-05-13 2015-02-04 株式会社ニコン 反射屈折型の投影光学系、露光装置、および露光方法
US9230812B2 (en) 2013-05-22 2016-01-05 United Microelectronics Corp. Method for forming semiconductor structure having opening
CN103499876B (zh) * 2013-10-10 2015-07-29 中国科学院光电技术研究所 一种大数值孔径的纯折射式投影光学系统
DE102017106837B4 (de) * 2017-03-30 2023-02-23 Carl Zeiss Jena Gmbh Linsensystem für ein Makroobjektiv für den industriellen Einsatz bei der Qualitätssicherung im Produktionsprozess, Makroobjektiv sowie System
DE102017207582A1 (de) * 2017-05-05 2018-11-08 Carl Zeiss Smt Gmbh Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren
CN109581622B (zh) * 2017-09-29 2020-12-04 上海微电子装备（集团）股份有限公司 一种投影物镜
CN113900227B (zh) * 2021-10-09 2022-07-05 中国科学院苏州生物医学工程技术研究所 一种大视场高分辨宽波段的物镜
CN114563866B (zh) * 2022-03-14 2024-02-20 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） 投影物镜系统
CN120065480B (zh) * 2025-04-30 2025-08-05 长春智冉光电科技有限公司 一种深紫外干湿两用投影物镜及方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4480910A (en) * 1981-03-18 1984-11-06 Hitachi, Ltd. Pattern forming apparatus
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
EP1139138A1 (en) * 1999-09-29 2001-10-04 Nikon Corporation Projection exposure method and apparatus and projection optical system
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE1462T1 (de) * 1979-07-27 1982-08-15 Werner W. Dr. Tabarelli Optisches lithographieverfahren und einrichtung zum kopieren eines musters auf eine halbleiterscheibe.
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3747951B2 (ja) 1994-11-07 2006-02-22 株式会社ニコン 反射屈折光学系
DE4417489A1 (de) 1994-05-19 1995-11-23 Zeiss Carl Fa Höchstaperturiges katadioptrisches Reduktionsobjektiv für die Miktrolithographie
US6169627B1 (en) * 1996-09-26 2001-01-02 Carl-Zeiss-Stiftung Catadioptric microlithographic reduction objective
US6631036B2 (en) 1996-09-26 2003-10-07 Carl-Zeiss-Stiftung Catadioptric objective
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JPH116957A (ja) 1997-04-25 1999-01-12 Nikon Corp 投影光学系および投影露光装置並びに投影露光方法
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6700645B1 (en) * 1998-01-22 2004-03-02 Nikon Corporation Projection optical system and exposure apparatus and method
WO1999049504A1 (fr) * 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
US6097537A (en) * 1998-04-07 2000-08-01 Nikon Corporation Catadioptric optical system
US5986824A (en) * 1998-06-04 1999-11-16 Nikon Corporation Large NA projection lens system with aplanatic lens element for excimer laser lithography
EP0989434B1 (en) 1998-07-29 2006-11-15 Carl Zeiss SMT AG Catadioptric optical system and exposure apparatus having the same
EP1006388A3 (de) 1998-11-30 2002-05-02 Carl Zeiss Reduktions-Projektionsobjektiv der Mikrolithographie
DE19855108A1 (de) * 1998-11-30 2000-05-31 Zeiss Carl Fa Mikrolithographisches Reduktionsobjektiv, Projektionsbelichtungsanlage und -Verfahren
US6867922B1 (en) * 1999-06-14 2005-03-15 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus using the same
JP3423644B2 (ja) 1999-06-14 2003-07-07 キヤノン株式会社 投影光学系及びそれを用いた投影露光装置
JP2001023887A (ja) 1999-07-09 2001-01-26 Nikon Corp 投影光学系、該光学系を備える投影露光装置及び露光方法
WO2001023933A1 (en) * 1999-09-29 2001-04-05 Nikon Corporation Projection optical system
EP1094350A3 (en) * 1999-10-21 2001-08-16 Carl Zeiss Optical projection lens system
TW448307B (en) * 1999-12-21 2001-08-01 Zeiss Stiftung Optical projection system
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
TW538256B (en) * 2000-01-14 2003-06-21 Zeiss Stiftung Microlithographic reduction projection catadioptric objective
JP2001228401A (ja) * 2000-02-16 2001-08-24 Canon Inc 投影光学系、および該投影光学系による投影露光装置、デバイス製造方法
US7301605B2 (en) 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
JP2001343582A (ja) * 2000-05-30 2001-12-14 Nikon Corp 投影光学系、当該投影光学系を備えた露光装置、及び当該露光装置を用いたマイクロデバイスの製造方法
US6486940B1 (en) 2000-07-21 2002-11-26 Svg Lithography Systems, Inc. High numerical aperture catadioptric lens
JP4245286B2 (ja) 2000-10-23 2009-03-25 株式会社ニコン 反射屈折光学系および該光学系を備えた露光装置
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
JP2002244035A (ja) 2000-12-11 2002-08-28 Nikon Corp 投影光学系および該投影光学系を備えた露光装置
JP2002323653A (ja) 2001-02-23 2002-11-08 Nikon Corp 投影光学系，投影露光装置および投影露光方法
JP2003185920A (ja) 2001-12-18 2003-07-03 Nikon Corp 結像光学系及び投影露光装置
JP4016179B2 (ja) 2002-02-28 2007-12-05 ソニー株式会社 露光装置及び収束レンズの制御方法
AU2003208872A1 (en) 2002-03-01 2003-09-16 Carl Zeiss Smt Ag Refractive projection lens with a middle part
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
JP3982362B2 (ja) * 2002-08-23 2007-09-26 住友電気工業株式会社 光データリンク
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4480910A (en) * 1981-03-18 1984-11-06 Hitachi, Ltd. Pattern forming apparatus
EP1139138A1 (en) * 1999-09-29 2001-10-04 Nikon Corporation Projection exposure method and apparatus and projection optical system
WO2002091078A1 (en) * 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SWITKES,M.,ROTHSCHILD,M.: Immersion lithography at 157 nm. In: J.Vac. Sci.Technol.B 19(6),Nov./Dec.2001,S.2353-2356 *

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
US7382540B2 (en) 2002-03-01 2008-06-03 Carl Zeiss Smt Ag Refractive projection objective
US7209292B2 (en) 2002-12-09 2007-04-24 Carl Zeiss Smt Ag Projection objective, especially for microlithography, and method for adjusting a projection objective
US7310187B2 (en) 2002-12-09 2007-12-18 Carl Zeiss Smt Ag Projection objective, especially for microlithography, and method for adjusting a projection objective
DE10308610A1 (de) * 2003-02-27 2004-09-16 Carl Zeiss Immersionsflüssigkeit für die Mikroskopie bei Wasserimmersion
DE10308610B4 (de) * 2003-02-27 2006-04-13 Carl Zeiss Immersionsflüssigkeit für die Mikroskopie bei Wasserimmersion
US7285231B2 (en) 2003-02-27 2007-10-23 Carl-Zeiss-Stiftung Trading As Carl Zeiss Immersion liquid for water-immersion microscopy
WO2005050321A1 (de) * 2003-10-22 2005-06-02 Carl Zeiss Smt Ag Refraktives projektionsobjektiv für die immersions-lithographie
US7969663B2 (en) 2003-10-22 2011-06-28 Carl Zeiss Smt Gmbh Projection objective for immersion lithography
US7751129B2 (en) 2003-10-22 2010-07-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US7501367B2 (en) 2005-04-15 2009-03-10 Heraeus Quarzglas Gmbh & Co. Kg Optical component of quartz glass, method for producing said component, and method for exposing a substrate
US7777963B2 (en) 2005-05-27 2010-08-17 Carl Zeiss Smt Ag Method for improving the imaging properties of a projection objective, and such a projection objective
WO2006125617A2 (en) 2005-05-27 2006-11-30 Carl Zeiss Smt Ag Method for improving the imaging properties of a projection objective, and such a projection objective
US9069263B2 (en) 2005-05-27 2015-06-30 Carl Zeiss Smt Gmbh Method for improving the imaging properties of a projection objective, and such a projection objective
US9581813B2 (en) 2005-05-27 2017-02-28 Carl Zeiss Smt Gmbh Method for improving the imaging properties of a projection objective, and such a projection objective
US7692868B2 (en) 2005-06-14 2010-04-06 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
US7463423B2 (en) 2005-06-14 2008-12-09 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
US8054557B2 (en) 2005-06-14 2011-11-08 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US8879159B2 (en) 2005-06-14 2014-11-04 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US9316922B2 (en) 2005-06-14 2016-04-19 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
US9964859B2 (en) 2005-06-14 2018-05-08 Carl Zeiss Smt Gmbh Lithography projection objective, and a method for correcting image defects of the same
DE102023204235A1 (de) * 2023-05-08 2024-11-14 Carl Zeiss Smt Gmbh Lithographiesystem mit abspaltbaren Linsen

Also Published As

Publication number Publication date
US20050141098A1 (en) 2005-06-30
JP2005519348A (ja) 2005-06-30
WO2003077037A1 (en) 2003-09-18
US20030174408A1 (en) 2003-09-18
KR100991590B1 (ko) 2010-11-04
CN1639644A (zh) 2005-07-13
AU2003221490A1 (en) 2003-09-22
CN100573222C (zh) 2009-12-23
US7495840B2 (en) 2009-02-24
EP1485760A1 (en) 2004-12-15
KR20040099307A (ko) 2004-11-26
US20050231814A1 (en) 2005-10-20
AU2002312872A1 (en) 2003-09-22
EP1483625A1 (de) 2004-12-08
JP2005519347A (ja) 2005-06-30
US7203008B2 (en) 2007-04-10
WO2003077036A1 (de) 2003-09-18
US6891596B2 (en) 2005-05-10
US7312847B2 (en) 2007-12-25
US20070188880A1 (en) 2007-08-16

Similar Documents

Publication Publication Date Title
DE10210899A1 (de) Refraktives Projektionsobjektiv für Immersions-Lithographie
EP1097404A1 (de) Projektionsobjektiv für die mikrolithographie
DE69933973T2 (de) Katadioptrisches optisches system und damit ausgestattete belichtungsvorrichtung
DE69122018T2 (de) Röntgenstrahllithographie mit ringförmigem Bildfeld
DE69526568T2 (de) Optisches Projektionssystem und Belichtungsapparat mit einem solchen
DE60206908T2 (de) Projektionssystem für die extrem-ultraviolettlithographie
EP1327172A1 (de) 8-spiegel-mikrolithographie-projektionsobjektiv
EP1544676A2 (de) Refraktives Projektionsobjektiv für Immersions-Lithographie
EP1845417B1 (de) Beleuchtungssystem mit Zoomobjetiv
EP1199590A1 (de) 8-Spiegel-Mikrolithographie-Projektionsobjektiv
EP1480082A1 (de) Ringfeld-4-Spiegelsysteme mit konvexem Primärspiegel für die EUV-Lithographie
DE69824658T2 (de) Optisches System für Projektion
WO2005050321A1 (de) Refraktives projektionsobjektiv für die immersions-lithographie
WO2000033138A1 (de) Hochaperturiges projektionsobjektiv mit minimalem blendenfehler
EP1102100A2 (de) Katadioptrisches Objektiv mit physikalischem Strahlteiler
WO2018184720A2 (de) Projektionsobjektiv, projektionsbelichtungsanlage und projektionsbelichtungsverfahren
DE4203464B4 (de) Katadioptrisches Reduktionsobjektiv
EP1227354A2 (de) Katadioptrisches Reduktionsobjektiv
DE10064685A1 (de) Lithographieobjektiv mit einer ersten Linsengruppe, bestehend ausschließlich aus Linsen positiver Brechkraft
EP1344112A2 (de) Projektionsobjektiv
DE102022201002A1 (de) Projektionsobjektiv, Projektionsbelichtungsanlage und Projektionsbelichtungsverfahren
WO2003093904A1 (de) Projektionsobjektiv höchster apertur
DE102008015775A1 (de) Chromatisch korrigiertes Lithographieobjektiv
DE102005024290A1 (de) Abbildungssystem, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
WO2005033800A1 (de) Lithographie-objektiv und projektionsbelichtungsanlage mit mindestens einem solchen lithographie-objektiv

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8141 Disposal/no request for examination