KR100991590B1 - 침지 리소그래피용 굴절 투영 대물렌즈 - Google Patents
침지 리소그래피용 굴절 투영 대물렌즈 Download PDFInfo
- Publication number
- KR100991590B1 KR100991590B1 KR1020047014023A KR20047014023A KR100991590B1 KR 100991590 B1 KR100991590 B1 KR 100991590B1 KR 1020047014023 A KR1020047014023 A KR 1020047014023A KR 20047014023 A KR20047014023 A KR 20047014023A KR 100991590 B1 KR100991590 B1 KR 100991590B1
- Authority
- KR
- South Korea
- Prior art keywords
- lens
- lens group
- projection objective
- refractive power
- image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B9/00—Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or -
- G02B9/60—Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or - having five components only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Lenses (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10210899.4 | 2002-03-08 | ||
| DE10210899A DE10210899A1 (de) | 2002-03-08 | 2002-03-08 | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| PCT/EP2003/001954 WO2003077037A1 (en) | 2002-03-08 | 2003-02-26 | Refractive projection objective for immersion lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040099307A KR20040099307A (ko) | 2004-11-26 |
| KR100991590B1 true KR100991590B1 (ko) | 2010-11-04 |
Family
ID=27762884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020047014023A Expired - Fee Related KR100991590B1 (ko) | 2002-03-08 | 2003-02-26 | 침지 리소그래피용 굴절 투영 대물렌즈 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US6891596B2 (https=) |
| EP (2) | EP1483625A1 (https=) |
| JP (2) | JP2005519347A (https=) |
| KR (1) | KR100991590B1 (https=) |
| CN (1) | CN100573222C (https=) |
| AU (2) | AU2002312872A1 (https=) |
| DE (1) | DE10210899A1 (https=) |
| WO (2) | WO2003077036A1 (https=) |
Families Citing this family (263)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
| US7203007B2 (en) * | 2000-05-04 | 2007-04-10 | Carl Zeiss Smt Ag | Projection exposure machine comprising a projection lens |
| KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
| DE10229249A1 (de) | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Refraktives Projektionsobjektiv mit einer Taille |
| US7190527B2 (en) | 2002-03-01 | 2007-03-13 | Carl Zeiss Smt Ag | Refractive projection objective |
| DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| KR20050035890A (ko) | 2002-08-23 | 2005-04-19 | 가부시키가이샤 니콘 | 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법 |
| SG121819A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| CN101470360B (zh) | 2002-11-12 | 2013-07-24 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG135052A1 (en) | 2002-11-12 | 2007-09-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| TWI255971B (en) | 2002-11-29 | 2006-06-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
| US7948604B2 (en) | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| EP1571697A4 (en) | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD |
| KR101101737B1 (ko) | 2002-12-10 | 2012-01-05 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| WO2004053952A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| SG157962A1 (en) * | 2002-12-10 | 2010-01-29 | Nikon Corp | Exposure apparatus and method for producing device |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| KR101643112B1 (ko) | 2003-02-26 | 2016-07-26 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| DE10308610B4 (de) * | 2003-02-27 | 2006-04-13 | Carl Zeiss | Immersionsflüssigkeit für die Mikroskopie bei Wasserimmersion |
| KR101345474B1 (ko) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP4902201B2 (ja) | 2003-04-07 | 2012-03-21 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| KR20110104084A (ko) | 2003-04-09 | 2011-09-21 | 가부시키가이샤 니콘 | 액침 리소그래피 유체 제어 시스템 |
| EP2157480B1 (en) | 2003-04-09 | 2015-05-27 | Nikon Corporation | Exposure method and apparatus, and device manufacturing method |
| EP3352010A1 (en) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
| JP4656057B2 (ja) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| SG141426A1 (en) * | 2003-04-10 | 2008-04-28 | Nikon Corp | Environmental system including vacuum scavange for an immersion lithography apparatus |
| KR101431938B1 (ko) | 2003-04-10 | 2014-08-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
| SG139733A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| KR101289959B1 (ko) * | 2003-04-11 | 2013-07-26 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| KR20050122269A (ko) | 2003-04-17 | 2005-12-28 | 가부시키가이샤 니콘 | 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열 |
| KR101790914B1 (ko) | 2003-05-06 | 2017-10-26 | 가부시키가이샤 니콘 | 투영 광학계, 노광 장치 및 노광 방법 |
| US7348575B2 (en) | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2004102646A1 (ja) | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| TWI474380B (zh) | 2003-05-23 | 2015-02-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| TW201515064A (zh) | 2003-05-23 | 2015-04-16 | 尼康股份有限公司 | 曝光方法及曝光裝置以及元件製造方法 |
| WO2004107417A1 (ja) | 2003-05-28 | 2004-12-09 | Nikon Corporation | 露光方法及び露光装置、並びにデバイス製造方法 |
| TWI442694B (zh) | 2003-05-30 | 2014-06-21 | Asml荷蘭公司 | 微影裝置及元件製造方法 |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| US7317504B2 (en) | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP3104396B1 (en) | 2003-06-13 | 2018-03-21 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| KR101476087B1 (ko) | 2003-06-19 | 2014-12-23 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
| EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
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| EP2843472B1 (en) | 2003-07-08 | 2016-12-07 | Nikon Corporation | Wafer table for immersion lithography |
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| US7738074B2 (en) | 2003-07-16 | 2010-06-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| JP4524669B2 (ja) | 2003-07-25 | 2010-08-18 | 株式会社ニコン | 投影光学系の検査方法および検査装置 |
| US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
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| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
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| US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
| TWI439823B (zh) | 2003-08-26 | 2014-06-01 | 尼康股份有限公司 | Optical components and exposure devices |
| US8149381B2 (en) | 2003-08-26 | 2012-04-03 | Nikon Corporation | Optical element and exposure apparatus |
| US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| KR101419192B1 (ko) | 2003-08-29 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| TWI263859B (en) | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP2261740B1 (en) | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1660925B1 (en) | 2003-09-03 | 2015-04-29 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
| US7551361B2 (en) | 2003-09-09 | 2009-06-23 | Carl Zeiss Smt Ag | Lithography lens system and projection exposure system provided with at least one lithography lens system of this type |
| JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US8208198B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
| EP1519230A1 (en) | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE60302897T2 (de) | 2003-09-29 | 2006-08-03 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
| JP4492539B2 (ja) * | 2003-09-29 | 2010-06-30 | 株式会社ニコン | 液浸型光学系及び投影露光装置、並びにデバイス製造方法 |
| US7158211B2 (en) | 2003-09-29 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101498437B1 (ko) | 2003-09-29 | 2015-03-03 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
| US7056646B1 (en) | 2003-10-01 | 2006-06-06 | Advanced Micro Devices, Inc. | Use of base developers as immersion lithography fluid |
| ITMI20031914A1 (it) * | 2003-10-03 | 2005-04-04 | Solvay Solexis Spa | Perfluoropolieteri. |
| KR20060126949A (ko) | 2003-10-08 | 2006-12-11 | 가부시키가이샤 니콘 | 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법 |
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| US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| EP3370115A1 (en) | 2003-12-03 | 2018-09-05 | Nikon Corporation | Exposure apparatus, exposure method and method for producing a device |
| KR101281397B1 (ko) | 2003-12-15 | 2013-07-02 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
| US7466489B2 (en) | 2003-12-15 | 2008-12-16 | Susanne Beder | Projection objective having a high aperture and a planar end surface |
| JPWO2005057635A1 (ja) * | 2003-12-15 | 2007-07-05 | 株式会社ニコン | 投影露光装置及びステージ装置、並びに露光方法 |
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2002
- 2002-03-08 DE DE10210899A patent/DE10210899A1/de not_active Withdrawn
- 2002-05-03 JP JP2003575189A patent/JP2005519347A/ja active Pending
- 2002-05-03 EP EP02738025A patent/EP1483625A1/de not_active Withdrawn
- 2002-05-03 WO PCT/EP2002/004846 patent/WO2003077036A1/de not_active Ceased
- 2002-05-03 AU AU2002312872A patent/AU2002312872A1/en not_active Abandoned
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2003
- 2003-02-26 JP JP2003575190A patent/JP2005519348A/ja active Pending
- 2003-02-26 KR KR1020047014023A patent/KR100991590B1/ko not_active Expired - Fee Related
- 2003-02-26 AU AU2003221490A patent/AU2003221490A1/en not_active Abandoned
- 2003-02-26 EP EP03717197A patent/EP1485760A1/en not_active Withdrawn
- 2003-02-26 WO PCT/EP2003/001954 patent/WO2003077037A1/en not_active Ceased
- 2003-02-26 CN CNB038055759A patent/CN100573222C/zh not_active Expired - Fee Related
- 2003-03-06 US US10/379,809 patent/US6891596B2/en not_active Expired - Fee Related
-
2004
- 2004-09-08 US US10/935,321 patent/US7203008B2/en not_active Expired - Lifetime
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2005
- 2005-03-22 US US11/085,602 patent/US7312847B2/en not_active Expired - Fee Related
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- 2007-03-20 US US11/723,441 patent/US7495840B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1139138A1 (en) | 1999-09-29 | 2001-10-04 | Nikon Corporation | Projection exposure method and apparatus and projection optical system |
Also Published As
| Publication number | Publication date |
|---|---|
| US20050141098A1 (en) | 2005-06-30 |
| US7203008B2 (en) | 2007-04-10 |
| KR20040099307A (ko) | 2004-11-26 |
| AU2002312872A1 (en) | 2003-09-22 |
| US7495840B2 (en) | 2009-02-24 |
| CN1639644A (zh) | 2005-07-13 |
| US20050231814A1 (en) | 2005-10-20 |
| DE10210899A1 (de) | 2003-09-18 |
| WO2003077037A1 (en) | 2003-09-18 |
| JP2005519347A (ja) | 2005-06-30 |
| JP2005519348A (ja) | 2005-06-30 |
| US7312847B2 (en) | 2007-12-25 |
| CN100573222C (zh) | 2009-12-23 |
| US6891596B2 (en) | 2005-05-10 |
| US20030174408A1 (en) | 2003-09-18 |
| WO2003077036A1 (de) | 2003-09-18 |
| EP1483625A1 (de) | 2004-12-08 |
| EP1485760A1 (en) | 2004-12-15 |
| US20070188880A1 (en) | 2007-08-16 |
| AU2003221490A1 (en) | 2003-09-22 |
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