DE10149093B4 - Halbleiterbauelement mit Harzgehäuse - Google Patents

Halbleiterbauelement mit Harzgehäuse Download PDF

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Publication number
DE10149093B4
DE10149093B4 DE2001149093 DE10149093A DE10149093B4 DE 10149093 B4 DE10149093 B4 DE 10149093B4 DE 2001149093 DE2001149093 DE 2001149093 DE 10149093 A DE10149093 A DE 10149093A DE 10149093 B4 DE10149093 B4 DE 10149093B4
Authority
DE
Germany
Prior art keywords
metal block
semiconductor device
insulating layer
resin
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2001149093
Other languages
German (de)
English (en)
Other versions
DE10149093A1 (de
Inventor
Toshiaki Shinohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10149093A1 publication Critical patent/DE10149093A1/de
Application granted granted Critical
Publication of DE10149093B4 publication Critical patent/DE10149093B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00Arrangements for thermal protection or thermal control
    • H10W40/70Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77Auxiliary members characterised by their shape
    • H10W40/778Auxiliary members characterised by their shape in encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/811Multiple chips on leadframes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5366Shapes of wire connectors the bond wires having kinks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5473Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5475Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
DE2001149093 2001-02-09 2001-10-05 Halbleiterbauelement mit Harzgehäuse Expired - Lifetime DE10149093B4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001033707A JP4286465B2 (ja) 2001-02-09 2001-02-09 半導体装置とその製造方法
JPP2001-033707 2001-02-09

Publications (2)

Publication Number Publication Date
DE10149093A1 DE10149093A1 (de) 2002-08-29
DE10149093B4 true DE10149093B4 (de) 2009-05-07

Family

ID=18897415

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2001149093 Expired - Lifetime DE10149093B4 (de) 2001-02-09 2001-10-05 Halbleiterbauelement mit Harzgehäuse

Country Status (4)

Country Link
US (2) US6979909B2 (https=)
JP (1) JP4286465B2 (https=)
KR (2) KR20020066362A (https=)
DE (1) DE10149093B4 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011088218A1 (de) * 2011-12-12 2013-06-13 Robert Bosch Gmbh Elektronisches Leistungsmodul mit thermischen Kopplungsschichten zu einem Entwärmungselement
DE102019206523A1 (de) * 2019-05-07 2020-11-12 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100723454B1 (ko) * 2004-08-21 2007-05-30 페어차일드코리아반도체 주식회사 높은 열 방출 능력을 구비한 전력용 모듈 패키지 및 그제조방법
DE10142971A1 (de) * 2001-09-01 2003-03-27 Eupec Gmbh & Co Kg Leistungshalbleitermodul
JP2003100986A (ja) * 2001-09-26 2003-04-04 Toshiba Corp 半導体装置
US6677669B2 (en) * 2002-01-18 2004-01-13 International Rectifier Corporation Semiconductor package including two semiconductor die disposed within a common clip
JP3828036B2 (ja) * 2002-03-28 2006-09-27 三菱電機株式会社 樹脂モールド型デバイスの製造方法及び製造装置
US8169062B2 (en) * 2002-07-02 2012-05-01 Alpha And Omega Semiconductor Incorporated Integrated circuit package for semiconductior devices with improved electric resistance and inductance
US7042730B2 (en) * 2002-07-31 2006-05-09 International Rectifier Corporation Non-isolated heatsink(s) for power modules
KR100902766B1 (ko) * 2002-09-27 2009-06-15 페어차일드코리아반도체 주식회사 절연성 세라믹 히트 싱크를 갖는 디스크리트 패키지
TW582078B (en) * 2002-11-29 2004-04-01 Chipmos Technologies Bermuda Packaging process for improving effective die-bonding area
US7061025B2 (en) * 2003-03-10 2006-06-13 Mccolloch Lawrence R Optoelectronic device packaging assemblies and methods of making the same
US6919625B2 (en) * 2003-07-10 2005-07-19 General Semiconductor, Inc. Surface mount multichip devices
JP2005109100A (ja) * 2003-09-30 2005-04-21 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7239016B2 (en) * 2003-10-09 2007-07-03 Denso Corporation Semiconductor device having heat radiation plate and bonding member
JP2005136264A (ja) * 2003-10-31 2005-05-26 Mitsubishi Electric Corp 電力用半導体装置及び電力用半導体モジュール
US7250672B2 (en) * 2003-11-13 2007-07-31 International Rectifier Corporation Dual semiconductor die package with reverse lead form
US7149088B2 (en) * 2004-06-18 2006-12-12 International Rectifier Corporation Half-bridge power module with insert molded heatsinks
US7151309B2 (en) * 2004-08-27 2006-12-19 Texas Instruments Incorporated Apparatus for improved power distribution in wirebond semiconductor packages
US7812441B2 (en) * 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
JP4784150B2 (ja) * 2004-11-10 2011-10-05 富士電機株式会社 半導体装置および、半導体装置の製造方法
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
JP4644008B2 (ja) * 2005-03-09 2011-03-02 三菱電機株式会社 半導体モジュール
JP4659534B2 (ja) * 2005-07-04 2011-03-30 三菱電機株式会社 半導体装置
US8368165B2 (en) 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7310191B2 (en) 2006-03-09 2007-12-18 Matsushita Electric Industrial Co., Ltd. Zoom lens system, imaging device and camera
DE102006012781B4 (de) * 2006-03-17 2016-06-16 Infineon Technologies Ag Multichip-Modul mit verbessertem Systemträger und Verfahren zu seiner Herstellung
JP2007299874A (ja) * 2006-04-28 2007-11-15 Matsushita Electric Ind Co Ltd 熱伝導性基板及び電気伝導性基板
US20070257343A1 (en) * 2006-05-05 2007-11-08 Hauenstein Henning M Die-on-leadframe (dol) with high voltage isolation
JP2007312560A (ja) * 2006-05-22 2007-11-29 Toyota Motor Corp インシュレータおよび回転電機
WO2008016619A1 (en) 2006-07-31 2008-02-07 Vishay-Siliconix Molybdenum barrier metal for sic schottky diode and process of manufacture
US7928590B2 (en) * 2006-08-15 2011-04-19 Qimonda Ag Integrated circuit package with a heat dissipation device
US20080122896A1 (en) * 2006-11-03 2008-05-29 Stephenson Iii Stanley W Inkjet printhead with backside power return conductor
KR101489325B1 (ko) * 2007-03-12 2015-02-06 페어차일드코리아반도체 주식회사 플립-칩 방식의 적층형 파워 모듈 및 그 파워 모듈의제조방법
US8077475B2 (en) 2007-09-27 2011-12-13 Infineon Technologies Ag Electronic device
JP5415823B2 (ja) * 2008-05-16 2014-02-12 株式会社デンソー 電子回路装置及びその製造方法
JP5067267B2 (ja) * 2008-06-05 2012-11-07 三菱電機株式会社 樹脂封止型半導体装置とその製造方法
JP5056620B2 (ja) * 2008-06-30 2012-10-24 新神戸電機株式会社 配線板
US8664038B2 (en) * 2008-12-04 2014-03-04 Stats Chippac Ltd. Integrated circuit packaging system with stacked paddle and method of manufacture thereof
JP2010182911A (ja) * 2009-02-06 2010-08-19 Renesas Electronics Corp 半導体装置の製造方法及びワイヤボンダ
DE102009045063C5 (de) 2009-09-28 2017-06-01 Infineon Technologies Ag Leistungshalbleitermodul mit angespritztem Kühlkörper, Leistungshalbleitermodulsystem und Verfahren zur Herstellung eines Leistungshalbleitermoduls
DE102009046172A1 (de) * 2009-10-29 2011-05-05 Robert Bosch Gmbh Kühlkörper mit verbesserter Kühleffizienz, mit Kühlkörper ausgestattete Schaltung und Herstellungsverfahren hierfür
JP4947135B2 (ja) * 2009-12-04 2012-06-06 株式会社デンソー 半導体パッケージおよびその製造方法
DE102010001565A1 (de) * 2010-02-04 2011-08-04 Robert Bosch GmbH, 70469 Leistungsmodul mit einer Schaltungsanordnung, elektrische/elektronische Schaltungsanordnung, Verfahren zur Herstellung eines Leistungsmoduls
JP4717148B1 (ja) * 2010-05-28 2011-07-06 株式会社スズデン 照明器具および照明器具の製造方法
JP5257817B2 (ja) 2010-06-15 2013-08-07 三菱電機株式会社 半導体装置
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
US8587101B2 (en) 2010-12-13 2013-11-19 International Rectifier Corporation Multi-chip module (MCM) power quad flat no-lead (PQFN) semiconductor package utilizing a leadframe for electrical interconnections
US9443795B2 (en) 2010-12-13 2016-09-13 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having bootstrap diodes on a common integrated circuit (IC)
US9659845B2 (en) 2010-12-13 2017-05-23 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package in a single shunt inverter circuit
US9449957B2 (en) 2010-12-13 2016-09-20 Infineon Technologies Americas Corp. Control and driver circuits on a power quad flat no-lead (PQFN) leadframe
US9324646B2 (en) 2010-12-13 2016-04-26 Infineon Technologies America Corp. Open source power quad flat no-lead (PQFN) package
US9711437B2 (en) 2010-12-13 2017-07-18 Infineon Technologies Americas Corp. Semiconductor package having multi-phase power inverter with internal temperature sensor
US9620954B2 (en) 2010-12-13 2017-04-11 Infineon Technologies Americas Corp. Semiconductor package having an over-temperature protection circuit utilizing multiple temperature threshold values
US9362215B2 (en) * 2010-12-13 2016-06-07 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) semiconductor package with leadframe islands for multi-phase power inverter
US9524928B2 (en) 2010-12-13 2016-12-20 Infineon Technologies Americas Corp. Power quad flat no-lead (PQFN) package having control and driver circuits
US9355995B2 (en) 2010-12-13 2016-05-31 Infineon Technologies Americas Corp. Semiconductor packages utilizing leadframe panels with grooves in connecting bars
CN103250243B (zh) * 2010-12-16 2016-04-27 三菱电机株式会社 半导体装置
JP5714916B2 (ja) * 2011-01-12 2015-05-07 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5936310B2 (ja) 2011-03-17 2016-06-22 三菱電機株式会社 パワー半導体モジュール及びその取り付け構造
JP5602095B2 (ja) * 2011-06-09 2014-10-08 三菱電機株式会社 半導体装置
JP2013070026A (ja) * 2011-09-08 2013-04-18 Rohm Co Ltd 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置
EP2765600A4 (en) * 2011-09-30 2015-06-10 Rohm Co Ltd SEMICONDUCTOR COMPONENT
JP5940799B2 (ja) * 2011-11-22 2016-06-29 新光電気工業株式会社 電子部品搭載用パッケージ及び電子部品パッケージ並びにそれらの製造方法
US8581416B2 (en) * 2011-12-15 2013-11-12 Semiconductor Components Industries, Llc Method of forming a semiconductor device and leadframe therefor
US8866274B2 (en) 2012-03-27 2014-10-21 Infineon Technologies Ag Semiconductor packages and methods of formation thereof
US8916968B2 (en) 2012-03-27 2014-12-23 Infineon Technologies Ag Multichip power semiconductor device
US8847385B2 (en) * 2012-03-27 2014-09-30 Infineon Technologies Ag Chip arrangement, a method for forming a chip arrangement, a chip package, a method for forming a chip package
WO2013171996A1 (ja) 2012-05-16 2013-11-21 パナソニック株式会社 電力用半導体モジュール
JP2014056982A (ja) * 2012-09-13 2014-03-27 Mitsubishi Electric Corp パワー半導体装置およびその製造方法
JP2014207430A (ja) 2013-03-21 2014-10-30 ローム株式会社 半導体装置
US9324645B2 (en) 2013-05-23 2016-04-26 Avogy, Inc. Method and system for co-packaging vertical gallium nitride power devices
JP2015006116A (ja) * 2013-06-24 2015-01-08 株式会社デンソー 車両用回転電機
JP2015006118A (ja) * 2013-06-24 2015-01-08 株式会社デンソー 車両用回転電機
US9324809B2 (en) * 2013-11-18 2016-04-26 Avogy, Inc. Method and system for interleaved boost converter with co-packaged gallium nitride power devices
KR102153041B1 (ko) * 2013-12-04 2020-09-07 삼성전자주식회사 반도체소자 패키지 및 그 제조방법
DE102014203225A1 (de) * 2014-02-24 2015-01-29 Siemens Aktiengesellschaft Anordnung und Verfahren zur Abfuhr der Wärmeverluste von elektrischen Bauelementen hoher Pulsleistung
US20150279793A1 (en) * 2014-03-27 2015-10-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method thereof
JP6407756B2 (ja) * 2014-03-31 2018-10-17 株式会社東芝 半導体モジュールの製造方法
EP3226293B1 (en) * 2014-11-27 2022-05-11 Mitsubishi Electric Corporation Semiconductor module and semiconductor driving device
JP6345583B2 (ja) * 2014-12-03 2018-06-20 ルネサスエレクトロニクス株式会社 半導体装置
DE102014118080B4 (de) * 2014-12-08 2020-10-15 Infineon Technologies Ag Elektronisches Modul mit einem Wärmespreizer und Verfahren zur Herstellung davon
KR101744536B1 (ko) * 2015-02-09 2017-06-08 엘지전자 주식회사 방열유닛 및 이를 포함하는 공기조화기의 실외기
JP6281506B2 (ja) * 2015-02-24 2018-02-21 トヨタ自動車株式会社 半導体モジュール
JP6522402B2 (ja) 2015-04-16 2019-05-29 ローム株式会社 半導体装置
DE102015110655A1 (de) 2015-07-02 2017-01-05 Infineon Technologies Austria Ag Elektronische Vorrichtung und Verfahren zum Herstellen derselben
WO2017132462A1 (en) * 2016-01-28 2017-08-03 Kyocera International, Inc. Semiconductor packaging structure and package having stress release structure
WO2017154072A1 (ja) * 2016-03-07 2017-09-14 三菱電機株式会社 半導体装置および半導体装置の製造方法
JP6673012B2 (ja) * 2016-05-26 2020-03-25 三菱電機株式会社 半導体装置およびその製造方法
JP2019054069A (ja) * 2017-09-14 2019-04-04 株式会社東芝 半導体装置
JP6843731B2 (ja) * 2017-11-22 2021-03-17 三菱電機株式会社 半導体装置
JP7388912B2 (ja) 2019-12-23 2023-11-29 ダイヤゼブラ電機株式会社 イグナイタ
IT202000032267A1 (it) 2020-12-23 2022-06-23 St Microelectronics Srl Dispositivo elettronico incapsulato ad elevata dissipazione termica e relativo procedimento di fabbricazione

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink
DE4400341A1 (de) * 1993-01-08 1994-07-14 Mitsubishi Electric Corp Halbleitervorrichtung
US5598034A (en) * 1992-07-22 1997-01-28 Vlsi Packaging Corporation Plastic packaging of microelectronic circuit devices
DE19625240A1 (de) * 1995-10-26 1997-04-30 Mitsubishi Electric Corp Halbleitervorrichtung
EP0777272A2 (en) * 1995-11-30 1997-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
DE19700056A1 (de) * 1996-03-22 1997-09-25 Mitsubishi Electric Corp Halbleiterbauelement
JPH11243166A (ja) * 1998-02-24 1999-09-07 Fuji Electric Co Ltd 樹脂封止型半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0671061B2 (ja) * 1989-05-22 1994-09-07 株式会社東芝 樹脂封止型半導体装置
US5293301A (en) * 1990-11-30 1994-03-08 Shinko Electric Industries Co., Ltd. Semiconductor device and lead frame used therein
JP2564771B2 (ja) 1994-09-05 1996-12-18 株式会社後藤製作所 放熱板付き半導体装置及びその製造方法
JP3516789B2 (ja) * 1995-11-15 2004-04-05 三菱電機株式会社 半導体パワーモジュール
JPH09186269A (ja) 1996-01-05 1997-07-15 Hitachi Ltd 半導体装置
JP3201277B2 (ja) 1996-09-11 2001-08-20 株式会社日立製作所 半導体装置
JPH10135380A (ja) 1996-10-31 1998-05-22 Hitachi Ltd 半導体装置
US6001672A (en) * 1997-02-25 1999-12-14 Micron Technology, Inc. Method for transfer molding encapsulation of a semiconductor die with attached heat sink
JPH1117071A (ja) 1997-06-23 1999-01-22 Hitachi Ltd 半導体装置
JP3677403B2 (ja) * 1998-12-07 2005-08-03 パイオニア株式会社 発熱素子の放熱構造

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5317194A (en) * 1989-10-17 1994-05-31 Kabushiki Kaisha Toshiba Resin-sealed semiconductor device having intermediate silicon thermal dissipation means and embedded heat sink
US5598034A (en) * 1992-07-22 1997-01-28 Vlsi Packaging Corporation Plastic packaging of microelectronic circuit devices
DE4400341A1 (de) * 1993-01-08 1994-07-14 Mitsubishi Electric Corp Halbleitervorrichtung
DE19625240A1 (de) * 1995-10-26 1997-04-30 Mitsubishi Electric Corp Halbleitervorrichtung
EP0777272A2 (en) * 1995-11-30 1997-06-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
DE19700056A1 (de) * 1996-03-22 1997-09-25 Mitsubishi Electric Corp Halbleiterbauelement
JPH11243166A (ja) * 1998-02-24 1999-09-07 Fuji Electric Co Ltd 樹脂封止型半導体装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011088218A1 (de) * 2011-12-12 2013-06-13 Robert Bosch Gmbh Elektronisches Leistungsmodul mit thermischen Kopplungsschichten zu einem Entwärmungselement
DE102011088218B4 (de) * 2011-12-12 2015-10-15 Robert Bosch Gmbh Elektronisches Leistungsmodul mit thermischen Kopplungsschichten zu einem Entwärmungselement und Verfahren zur Herstellung
DE102019206523A1 (de) * 2019-05-07 2020-11-12 Zf Friedrichshafen Ag Leistungsmodul mit gehäusten Leistungshalbleitern zur steuerbaren elektrischen Leistungsversorgung eines Verbrauchers
US11652021B2 (en) 2019-05-07 2023-05-16 Zf Friedrichshafen Ag Power module having packaged power semiconductors for the controllable supply of electric power to a load

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US7045907B2 (en) 2006-05-16
DE10149093A1 (de) 2002-08-29
JP4286465B2 (ja) 2009-07-01
JP2002237562A (ja) 2002-08-23
US6979909B2 (en) 2005-12-27
US20020109211A1 (en) 2002-08-15

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