CN210167343U - 可移动并且可移除的处理配件 - Google Patents
可移动并且可移除的处理配件 Download PDFInfo
- Publication number
- CN210167343U CN210167343U CN201921582203.0U CN201921582203U CN210167343U CN 210167343 U CN210167343 U CN 210167343U CN 201921582203 U CN201921582203 U CN 201921582203U CN 210167343 U CN210167343 U CN 210167343U
- Authority
- CN
- China
- Prior art keywords
- ring
- outer diameter
- support
- diameter
- slip ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 74
- 230000008569 process Effects 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 claims description 60
- 210000001364 upper extremity Anatomy 0.000 claims 1
- 238000012545 processing Methods 0.000 description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 239000010453 quartz Substances 0.000 description 19
- 238000012546 transfer Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 7
- 229910010271 silicon carbide Inorganic materials 0.000 description 7
- 230000036961 partial effect Effects 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000007872 degassing Methods 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012636 effector Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Automation & Control Theory (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
- Farming Of Fish And Shellfish (AREA)
- Telephone Function (AREA)
Abstract
公开了可移动并且可移除的处理配件。本公开的各方面大体涉及用于调整边缘环位置并且用于移除或更换处理腔室的处理配件的一个或多个部件的方法和装置。处理配件包括边缘环、支撑环、滑环和其他自耗的或可降解的部件中的一个或多个。
Description
本申请是申请日为2018年12月21日、申请号为“201822159176.8”、实用新型名称为“可移动并且可移除的处理配件”的实用新型专利申请的分案申请。
技术领域
本公开的方面大体涉及用于处理腔室中的边缘环和/或支撑环更换的装置和方法,诸如在半导体处理中所使用的那些边缘环和/或支撑环。
背景技术
在诸如蚀刻腔室的处理腔室中,基板在静电夹紧就位的同时进行蚀刻。通常,称作边缘环、处理环、支撑环等等的一个或多个圆形零件被定位为围绕基板的外径以便保护静电卡盘的上表面不被蚀刻化学物质蚀刻或者便于基板的处理。这些环是由几种不同的材料制成并且可以具有不同的形状,这两方面皆影响基板周边附近的处理均匀性。在处理期间,随着时间推移蚀刻这些环,从而导致形状变化以及处理均匀性的变化。
为了解决由于劣化所引起的处理均匀性的变化,根据时间表来更换这些环。传统上,为了更换这些环中的一个,打开处理腔室以允许操作者接近内部的环。然而,这种处理耗时,并且由于处理腔室的通风而可能需要长达24小时才能使处理恢复在线。
因此,需要更换处理腔室内的自耗部件的新方法和装置。
实用新型内容
本公开的各方面大体涉及用于处理腔室内的诸如处理配件环和/或支撑环和/或边缘环的自耗零件更换的装置和方法。
在一个示例中,一种用于基板支撑件的处理配件包含具有由内径和外径限定的主体的滑环,主体具有形成为穿过其中的一个或多个开口,其中一个或多个开口中的每一个可以具有与主体的中心开口的轴线平行的轴线。处理配件还包括具有其中径向向内的部分被抬升到径向向外的部分上方的阶梯状上表面的支撑环,支撑环外径小于滑环的主体的内径。处理配件进一步包括具有平坦上表面和平坦下表面的边缘环,边缘环具有:小于支撑环的外径的内径,以及大于支撑环的外径的外径。
在另一个示例中,一种用于基板支撑件的处理配件包含具有由内径和外径限定的主体的滑环,主体具有形成为穿过其中的一个或多个开口,其中一个或多个开口中的每一个可以具有与主体的中心开口的轴线平行的轴线。处理配件还包括具有其中径向向内的部分被抬升到径向向外的部分上方的阶梯状上表面的支撑环,支撑环外径大于滑环的所述主体的内径,以及形成为通过支撑环的一个或多个开口,其中形成为通过支撑环的一个或多个开口中的每一个可以与形成为通过滑环的主体的一个或多个开口中的一个对准。处理配件进一步包括具有平坦上表面和平坦下表面的边缘环;边缘环具有小于支撑环的外径的内径,以及大于支撑环的外径的外径。
在另一个示例中,一种基板支撑件包含静电卡盘基座、定位在静电卡盘基座上方的圆盘、以及用于基板支撑件的处理配件。用于基板支撑件的处理配件包括具有由内径和外径限定的主体的滑环,主体具有形成为穿过其中的一个或多个开口,其中一个或多个开口中的每一个可以具有与主体的中心开口的轴线平行的轴线。处理配件还包括具有其中径向向内的部分被抬升到径向向外的部分上方的阶梯状上表面的支撑环,支撑环外径小于滑环的主体的内径。处理配件进一步包括具有平坦上表面和平坦下表面的边缘环,边缘环具有:小于支撑环的外径的内径,以及大于支撑环的外径的外径。
在另一个示例中,一种方法包含垂直向上致动多个升降杆,每一个升降杆包括其上部部分处的第一直径和其下部部分处的大于第一直径的第二直径,所述致动包括导引升降杆的上部部分通过支撑环中的对应开口;垂直地致动定位在支撑环上方的边缘环;将边缘环传送到载体;以及从处理腔室移除边缘环。
附图说明
为了可以详细地理解本公开的上述特征的方式,可以通过参考实施例获得以上简要概述的本公开的更具体描述,其一些在附图中示出。然而,应注意,附图仅仅说明示例性实施例,并且因此不应被视为对范畴的限制,因为本公开可以允许其他等效的实施例。
图1A至图1J是根据本公开的各方面的在从处理腔室移除环期间处理腔室的局部示意性横截面图。
图1K是根据本公开的一方面的在图1A至图1J中示出的滑环的俯视平面图。
图2A至图2B是根据本公开的另一方面的在环移除操作期间的基板支撑件的示意性局部视图。
图3A至图3C是根据本公开的另一方面的在环移除操作期间的基板支撑件的示意性局部视图。
图4A是根据本公开的一方面的载体的示意性俯视平面图。
图4B是图4A的载体的示意性仰视平面图。
图5A是在其上支撑环的载体的示意性俯视平面图。
图5B是图5A的示意性横截面图。
图6示出了根据本公开内容的一方面的处理系统。
为了便于理解,在可能的情况下,使用相同的附图标记来指示图中共有的相同元件。构想到,一个实施例的元件和特征可以有利地并入其他实施例中而无需进一步叙述。
具体实施方式
本公开的各方面大体涉及使用载体来移除或更换处理腔室的处理配件的一个或多个部件。处理配件的一个或多个部件包括边缘环、支撑环、滑环和其他自耗的或可降解的部件。
图1A至1J是根据本公开的各方面的在从处理腔室107移除边缘环161期间的处理腔室107的局部示意性横截面图。虽然传统的处理腔室需要由操作者进行拆卸以更换诸如边缘环161的已腐蚀部件,但是处理腔室107被配置成便于在不拆卸处理腔室107的情况下更换边缘环161。通过将边缘环161传送经过处理腔室107的端口108而避免处理腔室107的拆卸。
处理腔室107可以是蚀刻腔室、沉积腔室(包括原子层沉积、化学气相沉积、物理气相沉积或其等离子体增强版本)、退火腔室等等中的任何一个,其利用其中的基板支撑件140。示例性处理腔室包括由加利福尼亚州圣克拉拉市的应用材料公司(AppliedMaterials,Inc.)生产的那些处理腔室。
处理腔室107中包括用于在其上接收基板143的基板支撑件140(在图1B中示出),以及用于基板143的进入和离开的端口108。基板支撑件140包括例如静电卡盘以便于将基板夹持在基板支撑件140的上表面上。图1B是图1A的局部放大图。
如图1B所示,基板支撑件140包括静电卡盘基座141,其上设置有圆盘142。圆盘由矾土或氧化铝形成。基板143(以虚线示出)(诸如200毫米、300毫米或450毫米的半导体晶片)可以定位在圆盘142上,并通过静电夹持紧固于其上,以便于处理腔室107中的基板143的处理。
支撑环145定位在圆盘142周围并与圆盘142接触。支撑环145搁置在形成于圆盘142的径向外侧处和上部边缘处的阶梯状表面中。支撑环145包括具有径向向内的部分146的阶梯状上表面,径向向内的部分146经抬升而在径向向外的部分147上方。支撑环145的下表面148与径向向内的部分146和径向向外的部分147平行。在一个示例中,下表面148与形成于圆盘142中的阶梯状表面的下部部分180接触。在另一个示例中,下表面148与形成在圆盘142中的阶梯表面的下部部分180接触,并且另外,支撑环145的径向向内的侧壁190与形成在圆盘142周围的阶梯状表面的垂直边缘182接触。
滑环149被设置为沿圆周围绕静电卡盘基座141、圆盘142和支撑环145。滑环149被配置为容纳多个升降杆150,升降杆150被设置在形成于滑环149中的相应开口151中。滑环149和升降杆150中的每一个可以通过致动器(未示出)(诸如步进电动机)彼此独立地垂直致动。石英管152被设置在滑环149的径向外侧处。衬垫153被设置在石英管152的径向外侧处。等离子体屏蔽物154被定位在衬垫153的上表面上,环绕石英管152的上部末端。等离子体屏蔽物154限制处理腔室107内的等离子体流动。
如图1B中所示,由支撑环145的外边缘193限定的外径小于由滑环149的内边缘183限定的内径。
石英环155被定位在等离子体屏蔽物154和石英管152上。环形凹槽156形成在石英环155的下表面中并且接合石英管152的阶梯状上表面157。石英环155的下表面的径向向内的部分158a被定位成比石英环155的下表面的径向向外的部分158b低(例如,从石英环155的上表面进一步延伸)。所包括的石英环155的径向向外的上部拐角159是圆形的,然而,也可以构想其他构造。阶梯状表面160形成在石英环155的与上部拐角159相对的径向向内的上部拐角上。阶梯状表面160的下部部分192接合边缘环161。
边缘环161包括平坦上表面162a和平坦下表面162b,大体彼此平行。除了接合阶梯状表面160之外,边缘环161的平坦下表面162b还接合支撑环145的径向向外的部分147的上表面。在处理期间,滑动环149的上部末端194或升降杆150的上部末端196也可以接合边缘环161的平坦下表面162b,以使边缘环161从石英环155和支撑环145升高。边缘环161的升高可用以调整与基板143的径向向外边缘相邻的等离子体壳层,例如,通过补偿边缘环161的腐蚀。在一个示例中,边缘环161可以升高高达约2毫米(mm)的距离。然而,在一定量的时间之后,边缘环161可能被腐蚀到需要更换边缘环161的点。本公开的各方面有助于通过端口108移除和更换边缘环161,使得更换边缘环161不需要拆卸处理腔室107。
如图1B中所示,由边缘环161的内边缘170限定的内径小于由支撑环145的外边缘193限定的外径。由边缘环161的外边缘171限定的外径也大于由支撑环145的外边缘193限定的外径。此外,由边缘环161的外边缘171限定的外径大于由滑环149的外边缘184限定的外径。
为了移除边缘环161,并且参考图1C和图1D,边缘环161通过升降杆150升高到端口108上方的高度,以提供用于接收在边缘环161下方的载体113(图1D中以虚线示出)的空间。载体通过机器人刀片、末端执行器等等定位在边缘环161下方(为了清楚起见在图1D中未示出)。
现在参考图1E,一旦载体113位于边缘环161下方(例如,在基板支撑件140上方并与其同心对准),则多个升降杆163垂直向上致动以将载体113从机器人刀片处提升(为了清楚起见在图1E中未示出)。一旦提升载体113,就从处理腔室107移除机器人刀片。升降杆163位于升降杆150的径向内侧处。在一个示例中,使用三个升降杆163来接合载体113。
在载体113被支撑在升降杆163上的情况下,升降杆150下降以将边缘环161定位在载体113上,如图1F中所示。升降杆150继续下降到基板支撑件140中,同时边缘环161保持在载体113上,如图1G中所示。在升降杆150凹入基板支撑件中的情况下,升降杆163向上升高以抬升载体113和边缘环161,如图1H中所示。升降杆163升高到足以允许机器人刀片164进入处理腔室107的高度,如图1H中所示。机器人刀片164定位在载体113和边缘环161下方,以便于将载体113放置在机器人刀片164上。
一旦机器人刀片164定位在载体113下方,则升降杆163下降以将载体113定位在机器人刀片164上,如图1I中所示。升降杆163的额外向下移动消除了机器人刀片164和升降杆163之间的干扰。在升降杆163离开机器人刀片164的情况下,机器人刀片164以及载体113、边缘环161和可选的机器人手腕549准备好通过端口108从处理腔室107移除,如图1J中所示。随后,载体113移动通过机器人刀片164上的端口108,并且根据图6的示例进行传送。构想到可以通过相反操作将新的边缘环161引入处理腔室107中。
图1A至图1J示出了边缘环移除处理的一个示例。然而,也构想其他示例。例如,参考图1E,构想到在载体113被支撑在机器人刀片上的同时边缘环161可以降低到载体113上。升降杆150可以接着下降以提供空间,并且其上具有载体113和边缘环161的机器人可以通过端口108从腔室移除。在这个示例中,不需要载体首先被传送到升降杆163。
本文中的各方面并不限于由特定材料形成的腔室硬件或者处理部件。例如,构想到,边缘环161、支撑环145和滑环149以及衬垫153可以由一种或多种材料形成,包括石英、氮化硅、氮化铝、石墨、碳化硅或其他陶瓷材料。在一个示例中,边缘环161和支撑环145由碳化硅形成。也构想其他材料。
图1K是根据本公开的一方面的在图1A至图1J中示出的滑环149的俯视平面图。滑环149是圆形部件,其具有由具有内径187和外径188的主体186所限定的中心开口185。一个或多个开口151(示出为三个)形成为在主体186中或穿过主体186,以在其中容纳升降杆150(在图1B中示)。开口151与中心开口185轴向地对准。在所示的示例中,开口151具有与中心开口185的轴线平行的轴线。
返回参考图1B,根据本文中的各方面,等离子体壳层是可调整的。例如,在处理期间,边缘环161可能会腐蚀,这会影响等离子体壳层的平坦性,特别是在基板143的径向向外的边缘处(例如,在邻近边缘环161的上方)。为了补偿腐蚀,可以通过将滑环149致动到选定高度来升高边缘环161。
为了进一步便于等离子体壳层可调性,边缘环161可以耦接到处理腔室107的RF源。在一个示例中,边缘环161经由第一路径CRF1和第二路径CRF2耦接到RF源。第一路径CRF1从静电卡盘基座141通过圆盘142和支撑环145耦接,而第二路径CRF2通过滑环149从静电卡盘基座141耦接。在这个示例中,滑环149可以由导电材料(诸如像铝之类的金属)形成,以便于经由第二路径CRF2的恒定或几乎恒定的RF耦接。通过第二路径CRF2的恒定RF耦接导致跨基板143的表面的恒定等离子体壳层厚度。相反,当边缘环161升高时,边缘环161的基于杆或不导电的基于套管的调整导致RF去耦接,这可能导致等离子体壳层塌陷,从而导致等离子体和处理的不均匀性。
另外,本公开的各方面通过选择RF功率以使得第二路径CRF2的电容远大于等离子体壳层的电容而进一步促进恒定的RF耦接。通过将第二路径CRF2的电容维持在远大于等离子体壳层的电容,维持RF耦接,这导致在处理期间等离子体壳层的均匀性。此外,当将第二路径CRF的电容维持在远大于等离子体壳层的电容时,边缘环161上的电压保持恒定。为了实现沿第二路径CRF2的所需电容,可以选择静电卡盘基座141的径向向外的边缘197与滑环149的径向向内的边缘198之间的间隙的宽度以调整电容。也可以调整相对部件内或相对部件之间的其他间隙以进一步调谐电容和/或RF路径。尽管在图1A至图1K、图2A、图2B、图3A至图3C、图4A、图4B、图5A、图5B和图6中的某些部件之间示出了间隙,但是构想到在一些实施例中可以消除间隙,使得部件中的一个或多个彼此接触。另外,尽管在图1A至图1K、图2A、图2B、图3A至图3C、图4A、图4B、图5A、图5B和图6中示出某些部件彼此接触,但是构想到这些部件之间可以有间隙。例如,可以包括间隙以防止或减少颗粒产生的可能性、允许部件的移动、或减小运动期间部件之间的摩擦。为了进一步实现所需的电容和RF耦接,边缘环161可具有小于50ohm.cm的电阻率,诸如约1ohm.cm至约40ohm.cm。在这个示例中,边缘环161可以由硅或者碳化硅形成。
尽管未示出,但是构想到处理腔室107还可以包括一个或多个气体扩散器、等离子体发生器或其他部件(未示出)以便于基板处理。为此,除非本文另有明确说明,否则基板支撑件140并不限于与特定腔室部件一起使用。
图2A和图2B是根据本公开的另一方面的在环移除操作期间的基板支撑件240的示意性局部视图。基板支撑件240类似于基板支撑件140(图1B中所示),然而,基板支撑件240被配置成除了移除边缘环261之外还允许将支撑环245与边缘环261同时地移除。
为了便于移除支撑环245和边缘环261两者,支撑环245径向向外延伸到升降杆150上方的位置(示出了一个)。因此,当升高时,升降杆150接合支撑环245的下表面265a。升降杆150的持续垂直移动使支撑环245以及定位在支撑环245上的边缘环261抬升。一旦支撑环245和边缘环261升高到圆盘142上方的足够高度,载体113就定位成接收支撑环245和边缘环261,如图2B中所示。支撑环245和定位在其上的边缘环261被设置在载体113上,并且接着载体113从处理腔室被移除,如参考图1E至图1J所类似地描述。
为了便于在处理期间调整等离子体壳层而不干扰支撑环245,滑环249可以被定位以升高边缘环261,如图2A中所示。滑环249具有主体286。滑环249类似于上文所述的滑环149,但包括延伸部266。延伸部266位于滑环249的上部末端处并且从滑环249的主体286径向向外延伸。延伸部266包括水平部分267a和垂直部分267b。水平部分267a从滑环249的主体286径向向外延伸。垂直部分267b从水平部分267a向上延伸。垂直部分267b也与滑环249的主体286轴向地对准,如图2A中所示。在所示的示例中,垂直部分267b具有与滑环249的主体286的轴线平行的轴线。滑环249的致动使延伸部266与边缘环261的下表面262b接触以便于抬升边缘环261。当滑环249处于最低位置时,在支撑环145的下表面265a与滑环249的上部末端294之间存在垂直间隙268。垂直间隙268可以允许滑环249的一些垂直移动而不使滑环249接触支撑环245。在一个示例中,垂直间隙268大于约2mm。如图2A中所示,由支撑环245的外边缘293限定的外径可以大于由滑环249的内边缘283限定的内径。由垂直部分267b的内边缘295限定的内径可以大于由支撑环245的外边缘293限定的外径。并且,由垂直部分267b的外边缘297限定的外径可以小于由边缘环261的外边缘271限定的外径。为了容纳滑环249的延伸部266,构想到使用石英环255。石英环255类似于石英环155(图1B中所示),然而,石英环255包括增大的内径。因此,位于环形凹槽156的径向内侧的部分269包括与石英环155的对应部分相比减小的宽度W。
图3A至图3C是根据本公开的另一方面的在环移除操作期间的基板支撑件340的示意性局部视图。基板支撑件340类似于基板支撑件240,但允许边缘环361和支撑环345的独立移除和/或安装。滑环349包括形成于滑环349中的一个或多个开口351。为了便于边缘环361和支撑环345的独立移除和/或安装,支撑环345包括形成于其中的多个开口370。每个开口370可以与相应的升降杆350对准以允许升降杆350穿过其中。升降杆350类似于上文所述的升降杆150,然而,升降杆350包括具有第一直径的下部部分371a和具有小于第一直径的第二直径的上部部分371b。第二直径小于开口370的直径,而第一直径大于开口370的直径。因此,上部部分371b能够被容纳在开口370内,而下部部分371a不能被容纳在开口370内。第一直径在肩部372处过渡到第二直径。如图3A中所示,形成在支撑环345中的开口370中的每一个可以与形成在滑环349中的开口351中的一个对准。
参考图3B和图3C,边缘环361能够独立于支撑环345被移除。当使用比支撑环345被腐蚀得更快的边缘环361时,独立移除是有益的。因此,当移除已被腐蚀的边缘环361时,不需要移除和/或更换仍具有剩余使用寿命的支撑环345。因此,节省了时间和材料。
图3B示意性地示出了边缘环361的移除。为了移除边缘环361,升降杆350通过支撑环345中的开口370向上致动,以使边缘环361从基板支撑件340升高。在所示的示例中,边缘环361的致动不引起支撑环345移动。升降杆350升高到第一高度,所述第一高度为机器人刀片(图3B中未示出)和在边缘环361下方的载体313提供空间。载体313类似于载体113,但包括围绕其周边的多阶梯表面375。多阶梯表面375包括用于支撑其上的边缘环361的第一阶梯表面376a,和用于支撑其上的支撑环345的第二阶梯表面376b。第一阶梯表面376a的径向向内的侧壁376c可以具有大约等于边缘环361的内径的外径,诸如,为边缘环361的内径的约95%至约100%。例如,第一阶梯表面376a的径向向内的侧壁376c的外径可以是边缘环361的内径的约98%至100%,或约99%至100%。类似地,第二阶梯表面376b具有约等于支撑环345的内径的外径;诸如,为支撑环345的内径的约95%至100%,或约98%至100%,或约99%至100%。
在载体313定位在边缘环361下方的情况下,边缘环361被传送到载体313并从处理腔室107移除,如上文参考图1E至图1J类似地描述。在载体313和边缘环361从处理腔室107移除的情况下,升降杆350被进一步向上致动。升降杆350的肩部372接合支撑环345的下表面348。升降杆350的持续升高将支撑环345从基板支撑件340抬升到足以在支撑环345与基板支撑件340之间容纳载体313的高度,如图3C中所示。构想到,可以选择上部部分371b和下部部分371a的长度,以提供边缘环361和支撑环345在处理腔室内的所需定位,同时仍然允许足够的运动范围。一旦支撑环345被抬升,载体313就定位在基板支撑件340上方以在其阶梯表面376b上接收支撑环345。从处理腔室107移除载体313和支撑环345,如上文参考图1E至图1J类似地描述。
图4A是根据本公开的一方面的载体113的示意性俯视平面图。图4B是图4A的载体113的示意性仰视平面图。载体113是半圆形板416,其具有由两个平行边缘414a、414b和连接两个平行边缘414a、414b的两个相对的弯曲边缘415a、415b所限定的周边。弯曲边缘415a、415b便于定位在其上的边缘环的侧向支撑,而两个平行边缘414a、414b允许将载体113容纳在最初未设计成在其中容纳载体113的处理腔室中。例如,两个平行边缘414a、414b可便于在处理腔室内致动升降杆(诸如升降杆150)而不会在载体113位于处理腔室内时干扰载体113。载体113还包括第一弧形支撑结构430a和第二弧形支撑结构430b。
半圆形板416包括中心开口417和围绕中心开口417同心地定位的一个或多个半圆形开口(示出三个)418a。另外的半圆形开口418b围绕一个或多个半圆形开口418a同心地定位。半圆形开口418a、418b促进了载体113重量的减小,从而允许载体113用在最初未设计为用于搬运超过半导体晶片重量的重量的现有传送设备上。在一个示例中,半圆形板416由一种或多种材料形成,其包括碳纤维、石墨、碳化硅、石墨涂覆的碳化硅、氮化硅、氧化硅、矾土等等。也构想到其他材料。
半圆形板416还包括设置在其中的第一多个插座419。第一多个插座419的被尺寸设定和被配置使得在其中接收升降杆(诸如升降杆163)以便于在处理腔室内致动载体113。第一多个插座419各自位于距半圆形板416的中心相同的径向距离处。在一个示例中,第一多个插座419以一半径定位,该半径大于半圆形开口418a的半径但小于半圆形开口418b的半径。
半圆形板416还包括设置在其中的第二多个插座425(示出三个)。插座425各自被配置成接合支撑结构,诸如机器人刀片。通过支撑结构接合插座425减少了或防止了在载体113的传送期间载体113与支撑结构之间的相对移动。例如,支撑结构可以包括待接收在插座425内的对应公插头。
插座419、425中的每一个可以由金属、碳化硅、石墨、矾土、氮化硅、氧化硅、聚对苯二甲酸乙二醇酯或陶瓷材料中的一种或多种形成。也构想到其他材料。在一个示例中,插座419、425由软聚合物材料形成,诸如缩醛、PTFE或诸如碳化硅的陶瓷材料,以减少微粒的产生。
图5A是在其上支撑边缘环410的载体113的示意性俯视平面图。图5B是图5A的示意性横截面图。如图5A和图5B中所示,边缘环410被设置在第一弧形支撑结构430a和第二弧形支撑结构430b上并由第一弧形支撑结构430a和第二弧形支撑结构430b支撑。边缘环410的下表面432接触支撑表面433,而边缘环410的径向向内的边缘420接触第一弧形支撑结构430a和第二弧形支撑结构430b的垂直壁434。在所示出的示例中,边缘环410内径小于第一弧形支撑结构430a和第二弧形支撑结构430b的外径,并且边缘环410外径大于第一弧形支撑结构430a和第二弧形支撑结构430b的外径。另外,边缘环410的上表面440被设置在第一弧形支撑结构430a和第二弧形支撑结构430b的上表面444上方。在一个示例中,第一弧形支撑结构430a和第二弧形支撑结构430b中的一个或两个可以包括诸如平坦表面的特征,用于接合静电卡盘或其他基板支撑件以促进与其对准。
在图4B所示的示例中,第一弧形支撑结构430a和第二弧形支撑结构430b(均在图4A中示出)中的每一个包括公延伸部431,其接合形成为通过半圆形板416的开口(图4B中未示出)。在一个示例中,开口和公延伸部431以及第一弧形支撑结构430a和第二弧形支撑结构430b定位在插座425的径向外侧。第一弧形支撑结构430a和第二弧形支撑结构430b中的每一个的曲率半径可约等于弯曲边缘415a、415b的曲率半径。
图6示出了根据本公开的一方面的处理系统600。处理系统600包括工厂接口601,多个盒602可以耦接到工厂接口601以用于将基板传送到处理系统600中。处理系统600还包括将工厂接口601耦接到相应的脱气腔室604a、604b的第一真空端口603a、603b。第二真空端口605a、605b耦接到相应的脱气腔室604a、604b并被设置在脱气腔室604a、604b与传送腔室606之间,以便于将基板传送到传送腔室606中。传送腔室606包括设置于其周围并与其耦接的多个处理腔室607。处理腔室607通过相应的端口608,诸如狭缝阀等等,耦接到传送腔室606。控制器609控制处理系统600的各个方面。
图6示意性性地示出了边缘环610至处理腔室607中的传送。根据本公开的一个方面,边缘环610经由工厂接口机器人611从多个盒602中的一个移除,该工厂接口机器人611位于工厂接口601中或者直接装载到工厂接口601中。工厂接口机器人611将边缘环611传送通过第一真空端口603a、603b中的一个并传送到相应的脱气腔室604a、604b中。位于传送腔室606中的传送腔室机器人612通过第二真空端口605a或605b从脱气腔室604a、604b中的一个移除边缘环610。传送腔室机器人612将边缘环610移动到传送腔室606中,其中边缘环610可以通过相应的端口608传送到所需的处理腔室607。虽然为了清楚起见未在图6中示出,但是当边缘环610定位在载体113上时发生边缘环610的传送。边缘环610从处理腔室607的移除以相反的次序发生。
图6示出了边缘环传送的一个示例,然而,也构想到其他示例。例如,预期边缘环610可以手动地装载到传送腔室606中。边缘环610可以通过传送腔室机器人612从传送腔室606装载到处理腔室607中。或者或另外,边缘环可以装载在支撑单元中。与所示出的支撑单元相反,额外支撑单元可以定位成与工厂接口601通信。当使用两个支撑单元或多个盒602时,构想到一个SSP或盒602可以用于未经处理的边缘环610,而另一个支撑单元或盒602可以用于接收已处理的环610。本文所述的益处包括在不拆卸腔室的情况下移除腔室硬件。因此,可以执行预防性维护而减少停机时间。
虽然图6示出了边缘环610通过处理系统600的传送,但是构想到其他自耗零件(诸如处理环、支撑环等等)可以以类似的方式进行传送。
在本公开的一个示例中,一种方法包含:垂直向上致动多个升降杆,每一个升降杆包括其上部部分处的第一直径和其下部部分处的大于第一直径的第二直径,所述致动包括导引升降杆的上部部分通过支撑环中的对应开口;垂直地致动定位在支撑环上方的边缘环;将边缘环传送到载体;以及从处理腔室移除边缘环。在另一个示例中,所述方法可以进一步包含:在从处理腔室移除了边缘环之后,进一步向上致动升降杆以使支撑环与具有第二直径的升降杆的下部部分接合。
在另一个示例中,所述方法可以进一步包含:提升支撑环连同升降杆的下部部分,以及将支撑环设置在空的载体上。在方法的另一个示例中,垂直地致动边缘环可能不会引起支撑环移动。
虽然前文针对本公开的实施例,但是可以在不脱离本公开内容的基本范畴的情况下设计本公开的其他和进一步的实施例,并且本公开内容的范畴由随附权利要求确定。
Claims (26)
1.一种用于基板支撑件的处理配件,其特征在于,所述处理配件包含:
滑环,具有由内径和外径限定的主体,所述主体具有形成为穿过其中的一个或多个开口,其中所述一个或多个开口中的每一个开口具有与所述主体的中心开口的轴线平行的轴线,所述滑环具有在所述主体的上部末端处并且向上延伸的垂直部分,并且所述垂直部分的轴线与所述主体的轴线平行;
支撑环,具有其中径向向内的部分被抬升到径向向外的部分上方的阶梯状上表面,所述支撑环具有外径;以及
边缘环,具有平坦上表面和平坦下表面,所述边缘环具有:
小于所述支撑环的所述外径的内径;以及
大于所述支撑环的所述外径的外径。
2.如权利要求1所述的处理配件,其中,所述边缘环的所述外径大于所述滑环的所述主体的所述外径。
3.如权利要求1所述的处理配件,其中,形成于所述滑环的所述主体中的所述一个或多个开口包含至少三个开口。
4.如权利要求1所述的处理配件,其中,所述垂直部分的内径大于所述支撑环的所述外径。
5.如权利要求4所述的处理配件,其中,所述垂直部分的外径小于所述边缘环的所述外径。
6.如权利要求1所述的处理配件,其中,所述支撑环的所述外径大于所述滑环的所述主体的所述内径。
7.如权利要求1所述的处理配件,其中,形成于所述滑环的所述主体中的所述一个或多个开口中的每一个开口被配置成容纳一个或多个升降杆。
8.如权利要求1所述的处理配件,其中,所述支撑环的所述外径大于所述滑环的所述主体的所述内径,所述支撑环包括形成为穿过所述支撑环的一个或多个开口,并且形成为穿过所述支撑环的所述一个或多个开口中的每一个开口与形成为穿过所述滑环的所述主体的所述一个或多个开口中的一个开口对准。
9.如权利要求8所述的处理配件,其中:
穿过所述支撑环形成的所述一个或多个开口中的每一个开口具有直径;
形成在所述滑环的所述主体中的所述一个或多个开口中的每一个开口被配置成容纳一个或多个升降杆;并且
所述一个或多个升降杆中的每一个包括下部部分和上部部分,所述下部部分具有大于所述直径的第一直径,并且所述上部部分具有小于所述第一直径并且小于所述直径的第二直径。
10.一种基板支撑件,其特征在于,所述基板支撑件包含:
静电卡盘基座;
圆盘,定位在所述静电卡盘基座上方;以及
处理配件,用于所述基板支撑件,包含:
滑环,定位在所述静电卡盘基座周围并具有由内径和外径限定的主体,所述主体具有形成为穿过其中的一个或多个开口,其中所述一个或多个开口中的每一个开口具有与所述主体的中心开口的轴线平行的轴线,所述滑环具有在所述主体的上部末端处并且向上延伸的垂直部分,并且所述垂直部分的轴线与所述主体的轴线平行;
支撑环,具有其中径向向内的部分被抬升到径向向外的部分上方的阶梯状上表面,所述支撑环具有外径;以及
边缘环,具有平坦上表面和平坦下表面,所述边缘环具有:
小于所述支撑环的所述外径的内径;以及
大于所述支撑环的所述外径的外径。
11.如权利要求10所述的基板支撑件,其中,所述边缘环的所述外径大于所述滑环的所述主体的所述外径。
12.如权利要求10所述的基板支撑件,其中,形成于所述滑环的所述主体中的所述一个或多个开口包含至少三个开口。
13.如权利要求10所述的基板支撑件,其中,所述垂直部分的内径大于所述支撑环的所述外径。
14.如权利要求13所述的基板支撑件,其中,所述垂直部分的外径小于所述边缘环的所述外径。
15.如权利要求10所述的基板支撑件,其中,所述支撑环的所述外径大于所述滑环的所述主体的所述内径。
16.如权利要求10所述的基板支撑件,其中,形成于所述滑环的所述主体中的所述一个或多个开口中的每一个开口被配置成容纳一个或多个升降杆。
17.如权利要求10所述的基板支撑件,其中,所述支撑环的所述外径大于所述滑环的所述主体的所述内径;并且所述支撑环包括形成为穿过其中的一个或多个开口,并且所述一个或多个开口中的每一个开口与形成为穿过所述滑环的所述主体的所述一个或多个开口中的一个开口对准。
18.如权利要求17所述的基板支撑件,其中:
形成为穿过所述支撑环的所述一个或多个开口中的每一个开口具有直径;
形成在所述滑环的所述主体中的所述一个或多个开口中的每一个开口被配置成容纳一个或多个升降杆;并且
所述一个或多个升降杆中的每一个具有下部部分和上部部分,所述下部部分具有大于所述直径的第一直径,并且所述上部部分具有小于所述第一直径并且小于所述直径的第二直径。
19.一种用于基板支撑件的处理配件,其特征在于,所述处理配件包含:
滑环,具有由内径和外径限定的主体,所述主体具有形成为穿过其中的一个或多个开口,其中所述一个或多个开口中的每一个开口具有与所述主体的中心开口的轴线平行的轴线;
支撑环,具有其中径向向内的部分被抬升到径向向外的部分上方的阶梯状上表面,所述支撑环具有小于所述滑环的所述主体的所述内径的外径;以及
边缘环,具有平坦上表面和平坦下表面,所述边缘环具有:
小于所述支撑环的所述外径的内径;以及
大于所述支撑环的所述外径的外径。
20.如权利要求19所述的处理配件,其中,所述边缘环的所述外径大于所述滑环的所述主体的所述外径。
21.如权利要求19所述的处理配件,其中,形成在所述滑环的所述主体中的所述一个或多个开口包括至少三个开口。
22.如权利要求19所述的处理配件,其中,形成在所述滑环的所述主体中的所述一个或多个开口中的每一个开口被配置为容纳一个或多个升降杆。
23.一种基板支撑件,其特征在于,所述基板支撑件包含:
静电卡盘基座;
圆盘,定位在所述静电卡盘基座上方;以及
处理配件,用于所述基板支撑件,包含:
滑环,定位在所述静电卡盘基座周围并具有由内径和外径限定的主体,所述主体具有形成为穿过其中的一个或多个开口,其中所述一个或多个开口中的每一个开口具有与所述主体的中心开口的轴线平行的轴线;
支撑环,具有其中径向向内的部分被抬升到径向向外的部分上方的阶梯状上表面,所述支撑环具有小于所述滑环的所述主体的所述内径的外径;以及
边缘环,具有平坦上表面和平坦下表面,所述边缘环具有:
小于所述支撑环的所述外径的内径;以及
大于所述支撑环的所述外径的外径。
24.如权利要求23所述的基板支撑件,其中,所述边缘环的所述外径大于所述滑环的所述主体的所述外径。
25.如权利要求23所述的基板支撑件,其中,形成在所述滑环的所述主体中的所述一个或多个开口包括至少三个开口。
26.如权利要求23所述的基板支撑件,其中,形成在所述滑环的所述主体中的所述一个或多个开口中的每一个开口被配置成容纳一个或多个升降杆。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762609044P | 2017-12-21 | 2017-12-21 | |
US62/609,044 | 2017-12-21 | ||
CN201822159176.8U CN209471945U (zh) | 2017-12-21 | 2018-12-21 | 可移动并且可移除的处理配件 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201822159176.8U Division CN209471945U (zh) | 2017-12-21 | 2018-12-21 | 可移动并且可移除的处理配件 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN210167343U true CN210167343U (zh) | 2020-03-20 |
Family
ID=67006508
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811572407.6A Pending CN109950193A (zh) | 2017-12-21 | 2018-12-21 | 可移动并且可移除的处理配件 |
CN201822159176.8U Active CN209471945U (zh) | 2017-12-21 | 2018-12-21 | 可移动并且可移除的处理配件 |
CN201921582203.0U Active CN210167343U (zh) | 2017-12-21 | 2018-12-21 | 可移动并且可移除的处理配件 |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811572407.6A Pending CN109950193A (zh) | 2017-12-21 | 2018-12-21 | 可移动并且可移除的处理配件 |
CN201822159176.8U Active CN209471945U (zh) | 2017-12-21 | 2018-12-21 | 可移动并且可移除的处理配件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11043400B2 (zh) |
JP (1) | JP7297440B2 (zh) |
KR (1) | KR20190075849A (zh) |
CN (3) | CN109950193A (zh) |
TW (2) | TWI795495B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109950193A (zh) * | 2017-12-21 | 2019-06-28 | 应用材料公司 | 可移动并且可移除的处理配件 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108369922B (zh) | 2016-01-26 | 2023-03-21 | 应用材料公司 | 晶片边缘环升降解决方案 |
US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
US11201037B2 (en) | 2018-05-28 | 2021-12-14 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
JP7134104B2 (ja) * | 2019-01-09 | 2022-09-09 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置の載置台 |
KR20200112447A (ko) * | 2019-03-22 | 2020-10-05 | 삼성전자주식회사 | 에지 링을 갖는 기판 처리 장치 |
JP7321026B2 (ja) * | 2019-08-02 | 2023-08-04 | 東京エレクトロン株式会社 | エッジリング、載置台、基板処理装置及び基板処理方法 |
JP2021027305A (ja) * | 2019-08-09 | 2021-02-22 | 株式会社ディスコ | プラズマエッチング装置 |
CN112542415B (zh) * | 2019-09-20 | 2022-12-02 | 夏泰鑫半导体(青岛)有限公司 | 晶圆处理装置及半导体加工站 |
CN112563186A (zh) * | 2019-09-26 | 2021-03-26 | 东京毅力科创株式会社 | 基片支承器和等离子体处理装置 |
JP7465733B2 (ja) | 2019-09-26 | 2024-04-11 | 東京エレクトロン株式会社 | 基板支持器及びプラズマ処理装置 |
KR20210042749A (ko) * | 2019-10-10 | 2021-04-20 | 삼성전자주식회사 | 정전 척 및 상기 정전 척을 포함하는 기판 처리 장치 |
JP7412124B2 (ja) * | 2019-10-18 | 2024-01-12 | 東京エレクトロン株式会社 | 基板処理システム及びエッジリングを交換する方法 |
CN112713075B (zh) * | 2019-10-25 | 2024-03-12 | 中微半导体设备(上海)股份有限公司 | 等离子体隔离环、等离子体处理装置与基片处理方法 |
US20220415702A1 (en) * | 2020-02-24 | 2022-12-29 | Lam Research Corporation | Semiconductor processing chamber with dual-lift mechanism for edge ring elevation management |
TW202137326A (zh) * | 2020-03-03 | 2021-10-01 | 日商東京威力科創股份有限公司 | 基板支持台、電漿處理系統及環狀構件之安裝方法 |
JP2021150424A (ja) * | 2020-03-18 | 2021-09-27 | キオクシア株式会社 | エッジリング及びプラズマ処理装置 |
TW202213428A (zh) * | 2020-06-05 | 2022-04-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
JP7455012B2 (ja) * | 2020-07-07 | 2024-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理装置の載置台 |
CN114188205A (zh) * | 2020-09-14 | 2022-03-15 | 中微半导体设备(上海)股份有限公司 | 一种静电装置、其所在的基片处理系统及其置换清洁方法 |
KR20240034250A (ko) * | 2021-02-09 | 2024-03-13 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템 |
TWI745240B (zh) * | 2021-02-22 | 2021-11-01 | 天虹科技股份有限公司 | 晶圓承載固定裝置及應用該晶圓承載固定裝置的薄膜沉積設備 |
CN114121583B (zh) * | 2021-11-17 | 2024-03-29 | 长江存储科技有限责任公司 | 边缘刻蚀装置及晶圆处理方法 |
Family Cites Families (113)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5267607A (en) | 1991-05-28 | 1993-12-07 | Tokyo Electron Limited | Substrate processing apparatus |
JP2638443B2 (ja) | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | ドライエッチング方法およびドライエッチング装置 |
US5730801A (en) | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
US5762714A (en) | 1994-10-18 | 1998-06-09 | Applied Materials, Inc. | Plasma guard for chamber equipped with electrostatic chuck |
JP2713276B2 (ja) | 1995-12-07 | 1998-02-16 | 日本電気株式会社 | 半導体装置の製造装置およびこれを用いた半導体装置の製造方法 |
US5885428A (en) * | 1996-12-04 | 1999-03-23 | Applied Materials, Inc. | Method and apparatus for both mechanically and electrostatically clamping a wafer to a pedestal within a semiconductor wafer processing system |
US5851140A (en) | 1997-02-13 | 1998-12-22 | Integrated Process Equipment Corp. | Semiconductor wafer polishing apparatus with a flexible carrier plate |
DE59812627D1 (de) * | 1997-12-23 | 2005-04-07 | Unaxis Balzers Ag | Haltevorrichtung |
US6773562B1 (en) | 1998-02-20 | 2004-08-10 | Applied Materials, Inc. | Shadow frame for substrate processing |
KR20000030944A (ko) * | 1998-10-20 | 2000-06-05 | 윤종용 | 스퍼터 공정에 사용되는 리프트 후프 |
JP3234576B2 (ja) * | 1998-10-30 | 2001-12-04 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置におけるウェハ支持装置 |
US6022809A (en) | 1998-12-03 | 2000-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Composite shadow ring for an etch chamber and method of using |
US6709547B1 (en) | 1999-06-30 | 2004-03-23 | Lam Research Corporation | Moveable barrier for multiple etch processes |
US6206976B1 (en) | 1999-08-27 | 2001-03-27 | Lucent Technologies Inc. | Deposition apparatus and related method with controllable edge exclusion |
US6375748B1 (en) | 1999-09-01 | 2002-04-23 | Applied Materials, Inc. | Method and apparatus for preventing edge deposition |
US6589352B1 (en) | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
TW506234B (en) | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
US6391787B1 (en) | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
US7138014B2 (en) | 2002-01-28 | 2006-11-21 | Applied Materials, Inc. | Electroless deposition apparatus |
US6744212B2 (en) | 2002-02-14 | 2004-06-01 | Lam Research Corporation | Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions |
US6776849B2 (en) | 2002-03-15 | 2004-08-17 | Asm America, Inc. | Wafer holder with peripheral lift ring |
US7232591B2 (en) * | 2002-04-09 | 2007-06-19 | Matsushita Electric Industrial Co., Ltd. | Method of using an adhesive for temperature control during plasma processing |
US6896765B2 (en) | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
US7252738B2 (en) | 2002-09-20 | 2007-08-07 | Lam Research Corporation | Apparatus for reducing polymer deposition on a substrate and substrate support |
US7311784B2 (en) | 2002-11-26 | 2007-12-25 | Tokyo Electron Limited | Plasma processing device |
US6898558B2 (en) | 2002-12-31 | 2005-05-24 | Tokyo Electron Limited | Method and apparatus for monitoring a material processing system |
US20040261946A1 (en) | 2003-04-24 | 2004-12-30 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
KR100578129B1 (ko) | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
US7244336B2 (en) | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
US7338578B2 (en) | 2004-01-20 | 2008-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step edge insert ring for etch chamber |
US20050263070A1 (en) | 2004-05-25 | 2005-12-01 | Tokyo Electron Limited | Pressure control and plasma confinement in a plasma processing chamber |
US7138067B2 (en) | 2004-09-27 | 2006-11-21 | Lam Research Corporation | Methods and apparatus for tuning a set of plasma processing steps |
KR100964775B1 (ko) | 2005-10-12 | 2010-06-21 | 파나소닉 주식회사 | 플라즈마 처리장치 및 플라즈마 처리방법 |
KR20080015466A (ko) | 2006-01-31 | 2008-02-19 | 동경 엘렉트론 주식회사 | 기판 처리 장치 및 그것에 이용되는 기판 탑재대,플라즈마에 노출되는 부재 |
US7572737B1 (en) | 2006-06-30 | 2009-08-11 | Lam Research Corporation | Apparatus and methods for adjusting an edge ring potential substrate processing |
US7589950B2 (en) | 2006-10-13 | 2009-09-15 | Applied Materials, Inc. | Detachable electrostatic chuck having sealing assembly |
CN101583736A (zh) | 2007-01-19 | 2009-11-18 | 应用材料股份有限公司 | 浸没式等离子体室 |
US7968469B2 (en) | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity |
JP5317424B2 (ja) | 2007-03-28 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US20080289766A1 (en) | 2007-05-22 | 2008-11-27 | Samsung Austin Semiconductor Lp | Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup |
US7824146B2 (en) | 2007-09-07 | 2010-11-02 | Advanced Technology Development Facility | Automated systems and methods for adapting semiconductor fabrication tools to process wafers of different diameters |
US8999106B2 (en) | 2007-12-19 | 2015-04-07 | Applied Materials, Inc. | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
US20090260982A1 (en) | 2008-04-16 | 2009-10-22 | Applied Materials, Inc. | Wafer processing deposition shielding components |
US8398777B2 (en) | 2008-05-02 | 2013-03-19 | Applied Materials, Inc. | System and method for pedestal adjustment |
KR20100043844A (ko) * | 2008-10-21 | 2010-04-29 | 주식회사 테스 | 플라즈마 처리 장치 |
US20100101729A1 (en) | 2008-10-28 | 2010-04-29 | Applied Materials, Inc. | Process kit having reduced erosion sensitivity |
JP5406067B2 (ja) | 2009-02-16 | 2014-02-05 | キヤノンアネルバ株式会社 | トレイ及び真空処理装置 |
US9435029B2 (en) | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
CN102550130A (zh) | 2009-08-31 | 2012-07-04 | 朗姆研究公司 | 用于执行等离子体约束的多外围环装置 |
US8270141B2 (en) | 2009-11-20 | 2012-09-18 | Applied Materials, Inc. | Electrostatic chuck with reduced arcing |
JP5584517B2 (ja) | 2010-05-12 | 2014-09-03 | 東京エレクトロン株式会社 | プラズマ処理装置及び半導体装置の製造方法 |
JP5654297B2 (ja) | 2010-09-14 | 2015-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US8633423B2 (en) | 2010-10-14 | 2014-01-21 | Applied Materials, Inc. | Methods and apparatus for controlling substrate temperature in a process chamber |
KR20120048879A (ko) * | 2010-11-08 | 2012-05-16 | 주식회사 케이씨텍 | 클램프 링을 구비하는 세미배치 타입 원자층 증착장치 |
JP5690596B2 (ja) | 2011-01-07 | 2015-03-25 | 東京エレクトロン株式会社 | フォーカスリング及び該フォーカスリングを備える基板処理装置 |
JP6001529B2 (ja) | 2011-03-29 | 2016-10-05 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
KR101744668B1 (ko) | 2011-05-31 | 2017-06-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 유도성 커플링된 플라즈마(icp) 반응기를 위한 동적인 이온 라디칼 시브 및 이온 라디칼 개구 |
JP5948026B2 (ja) | 2011-08-17 | 2016-07-06 | 東京エレクトロン株式会社 | 半導体製造装置及び処理方法 |
KR101267459B1 (ko) | 2011-09-08 | 2013-05-31 | 한국과학기술연구원 | 플라즈마 이온주입 장치 및 방법 |
US8933628B2 (en) | 2011-10-28 | 2015-01-13 | Applied Materials, Inc. | Inductively coupled plasma source with phase control |
US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
JP5906429B2 (ja) * | 2013-02-21 | 2016-04-20 | パナソニックIpマネジメント株式会社 | プラズマ処理装置及びプラズマ処理方法 |
US9287147B2 (en) | 2013-03-14 | 2016-03-15 | Applied Materials, Inc. | Substrate support with advanced edge control provisions |
US9017526B2 (en) | 2013-07-08 | 2015-04-28 | Lam Research Corporation | Ion beam etching system |
JP6689020B2 (ja) * | 2013-08-21 | 2020-04-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN105493262B (zh) | 2013-08-30 | 2019-02-15 | 应用材料公司 | 基板支撑系统 |
JP2015050156A (ja) | 2013-09-04 | 2015-03-16 | 東京エレクトロン株式会社 | 基板載置台及びプラズマ処理装置 |
WO2015099892A1 (en) | 2013-12-23 | 2015-07-02 | Applied Materials, Inc. | Extreme edge and skew control in icp plasma reactor |
US9410249B2 (en) | 2014-05-15 | 2016-08-09 | Infineon Technologies Ag | Wafer releasing |
CN105336561B (zh) | 2014-07-18 | 2017-07-21 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀装置 |
JP6345030B2 (ja) | 2014-08-11 | 2018-06-20 | 東京エレクトロン株式会社 | プラズマ処理装置及びフォーカスリング |
KR20160022458A (ko) | 2014-08-19 | 2016-03-02 | 삼성전자주식회사 | 플라즈마 장비 및 이의 동작 방법 |
CN105789010B (zh) | 2014-12-24 | 2017-11-10 | 中微半导体设备(上海)有限公司 | 等离子体处理装置及等离子体分布的调节方法 |
US11605546B2 (en) | 2015-01-16 | 2023-03-14 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
US20170263478A1 (en) | 2015-01-16 | 2017-09-14 | Lam Research Corporation | Detection System for Tunable/Replaceable Edge Coupling Ring |
US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
JP6456177B2 (ja) | 2015-02-12 | 2019-01-23 | 株式会社ディスコ | ウェーハ処理システム |
US10163610B2 (en) | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
US9761459B2 (en) | 2015-08-05 | 2017-09-12 | Lam Research Corporation | Systems and methods for reverse pulsing |
US9620376B2 (en) | 2015-08-19 | 2017-04-11 | Lam Research Corporation | Self limiting lateral atomic layer etch |
US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
US9761414B2 (en) | 2015-10-08 | 2017-09-12 | Lam Research Corporation | Uniformity control circuit for use within an impedance matching circuit |
US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
CN108140606B (zh) | 2015-10-21 | 2022-05-24 | 住友大阪水泥股份有限公司 | 静电卡盘装置 |
US10124492B2 (en) | 2015-10-22 | 2018-11-13 | Lam Research Corporation | Automated replacement of consumable parts using end effectors interfacing with plasma processing system |
US20170115657A1 (en) | 2015-10-22 | 2017-04-27 | Lam Research Corporation | Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ |
US9881820B2 (en) | 2015-10-22 | 2018-01-30 | Lam Research Corporation | Front opening ring pod |
US10062599B2 (en) | 2015-10-22 | 2018-08-28 | Lam Research Corporation | Automated replacement of consumable parts using interfacing chambers |
US10985078B2 (en) | 2015-11-06 | 2021-04-20 | Lam Research Corporation | Sensor and adjuster for a consumable |
US9601319B1 (en) | 2016-01-07 | 2017-03-21 | Lam Research Corporation | Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process |
CN108369922B (zh) | 2016-01-26 | 2023-03-21 | 应用材料公司 | 晶片边缘环升降解决方案 |
US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
US9966231B2 (en) | 2016-02-29 | 2018-05-08 | Lam Research Corporation | Direct current pulsing plasma systems |
US20170278679A1 (en) | 2016-03-24 | 2017-09-28 | Lam Research Corporation | Method and apparatus for controlling process within wafer uniformity |
US11011353B2 (en) | 2016-03-29 | 2021-05-18 | Lam Research Corporation | Systems and methods for performing edge ring characterization |
US10312121B2 (en) | 2016-03-29 | 2019-06-04 | Lam Research Corporation | Systems and methods for aligning measurement device in substrate processing systems |
US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
US9852889B1 (en) | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
JP6635888B2 (ja) | 2016-07-14 | 2020-01-29 | 東京エレクトロン株式会社 | プラズマ処理システム |
US20180061696A1 (en) | 2016-08-23 | 2018-03-01 | Applied Materials, Inc. | Edge ring or process kit for semiconductor process module |
JP2018054500A (ja) | 2016-09-29 | 2018-04-05 | 東京エレクトロン株式会社 | 位置検出システム及び処理装置 |
JP6812224B2 (ja) | 2016-12-08 | 2021-01-13 | 東京エレクトロン株式会社 | 基板処理装置及び載置台 |
US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
JP6812264B2 (ja) | 2017-02-16 | 2021-01-13 | 東京エレクトロン株式会社 | 真空処理装置、及びメンテナンス装置 |
US11404249B2 (en) | 2017-03-22 | 2022-08-02 | Tokyo Electron Limited | Substrate processing apparatus |
JP6656200B2 (ja) | 2017-04-12 | 2020-03-04 | 東京エレクトロン株式会社 | 位置検出システム及び処理装置 |
KR102535916B1 (ko) | 2017-04-26 | 2023-05-23 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 |
US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
JP7326275B2 (ja) | 2017-12-01 | 2023-08-15 | アプライド マテリアルズ インコーポレイテッド | エッチング選択性の高いアモルファスカーボン膜 |
US11043400B2 (en) * | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
-
2018
- 2018-12-17 US US16/222,831 patent/US11043400B2/en active Active
- 2018-12-20 KR KR1020180166527A patent/KR20190075849A/ko active IP Right Grant
- 2018-12-20 JP JP2018238523A patent/JP7297440B2/ja active Active
- 2018-12-21 CN CN201811572407.6A patent/CN109950193A/zh active Pending
- 2018-12-21 CN CN201822159176.8U patent/CN209471945U/zh active Active
- 2018-12-21 TW TW107146316A patent/TWI795495B/zh active
- 2018-12-21 CN CN201921582203.0U patent/CN210167343U/zh active Active
- 2018-12-21 TW TW107217385U patent/TWM583125U/zh unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109950193A (zh) * | 2017-12-21 | 2019-06-28 | 应用材料公司 | 可移动并且可移除的处理配件 |
Also Published As
Publication number | Publication date |
---|---|
CN109950193A (zh) | 2019-06-28 |
TWI795495B (zh) | 2023-03-11 |
TW201929086A (zh) | 2019-07-16 |
US11043400B2 (en) | 2021-06-22 |
JP7297440B2 (ja) | 2023-06-26 |
TWM583125U (zh) | 2019-09-01 |
US20200234981A1 (en) | 2020-07-23 |
JP2019114790A (ja) | 2019-07-11 |
KR20190075849A (ko) | 2019-07-01 |
CN209471945U (zh) | 2019-10-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN210167343U (zh) | 可移动并且可移除的处理配件 | |
US11887879B2 (en) | In-situ apparatus for semiconductor process module | |
KR102617052B1 (ko) | 인터페이싱 챔버들을 사용하는 소모성 부품들의 자동화된 교체 | |
KR102664316B1 (ko) | 플라즈마 프로세싱 시스템과 인터페이싱하는 엔드 이펙터들을 사용한 소모성 부품들의 자동화된 교체 | |
US6241825B1 (en) | Compliant wafer chuck | |
KR102591660B1 (ko) | 이동가능한 에지 링 설계들 | |
KR20170054253A (ko) | 전면 개구 링 포드 | |
KR20200066537A (ko) | 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리 | |
US20040045509A1 (en) | Reduced friction lift pin | |
JP2020053538A (ja) | プラズマ処理装置 | |
US20200234928A1 (en) | Semiconductor plasma processing equipment with wafer edge plasma sheath tuning ability | |
US11101115B2 (en) | Ring removal from processing chamber | |
CN116711060A (zh) | 经由边缘夹持的薄型基板操纵 | |
CN115605975A (zh) | 高温及真空隔离处理微型环境 | |
CN116670811A (zh) | 用于经由边缘夹持进行薄型基板操纵的沉积环 | |
JP3225695U (ja) | ウェハエッジプラズマシース調整機能を備える半導体プラズマ処理装置 | |
CN117894659A (zh) | 聚焦环、包括该聚焦环的衬底处理装置及半导体制造方法 | |
KR20220095644A (ko) | 기판 처리 장치 및 그 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant |