CN1997439A - 用于控制气体污染物燃烧的装置和方法 - Google Patents
用于控制气体污染物燃烧的装置和方法 Download PDFInfo
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- F23G7/061—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases with supplementary heating
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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Abstract
本发明涉及用于控制气体污染物的燃烧同时从处理系统内去除不希望反应产品的沉积。该系统采用具有上热反应器的二级热反应器,该上热反应器具有用于混合废气流和用于在上热反应室内热燃烧的氧化剂及可燃烧燃料的至少一个入口。上热反应器还包括具有外部壁和内部多孔壁的双壁结构,其限定用于保持并就脉动方式喷射流体的内部空间,该流体通过内部多孔壁进入上热反应室,以减少反应产品在上反应器室内部的沉积。该二级热反应器还包括下反应器室,该下反应器室通过水涡动器来流动在上热反应器中形成的反应产品,该水涡动器提供沿下反应器室的内部溢出的水,由此减少不希望产品在下反应器的内表面上的沉积。
Description
技术领域
本发明一般地涉及用于半导体制造中产生的工业废液(诸如废气)的热处理的系统和方法,该系统和方法同时减少反应产品在处理系统中的沉积。
背景技术
来自制造半导体材料、器件、产品以及存储物质的废气包括在处理工厂中使用和产生的各种化学化合物。这些化合物包括无机化合物和有机化合物、光刻胶和其它反应剂的分解产品、以及在从处理工厂排出到大气之前必须从废气流中去除的各种其它气体。
半导体制造处理利用各种化学品,这些化学品中的许多具有非常低的人类允许限度。这些材料包括气态的锑、砷、硼、锗、氮、磷、硅的氢化物;硅烷;硅烷与磷化氢、氩、氢的混合物;有机硅烷、卤代硅烷、卤素以及其它有机化合物。
在需要消除(abatement)的各种成分中,卤素(例如氟(F2)和氟化物)是尤其有问题的。电子工业在晶片处理工具中使用全氟化合物(PFC)来从沉积步骤去除残余物或蚀刻薄膜。已经意识到,PFC对全球变暖起到很大的作用,因此电子工业正努力减少这些气体的散发。最经常使用的PFC包括CF4、C2F6、SF6、C3F8和NF3。这些PFC在等离子体中分解,以产生高活性的F2和氟基,F2和氟基进行实际的清洁和蚀刻。来自这些处理操作的产品包括大部分的氟、四氟化硅(SiF4)、以及较少范围的氟化氢(HF)、羰基氟化物(COF2)、CF4和C2F6。
最显著的问题一直是从半导体制造处理的废气流中去除这些材料。事实上,所有美国半导体制造工厂利用洗涤器或类似装置来处理他们的废气,但是这些工厂所采用的技术不能够去除所有的有毒的或者其它不能接受的杂质。
这个问题的一个解决方法是煅烧处理气体,以氧化有毒的材料,将它们转化成低毒的形式。这些系统在其处理能力方面总是过于安全地设计,通常不具有安全处理大量混合的化学流而不引起复杂的活性化学品危险的能力。此外,传统的锻烧器通常获得不足于完全燃烧,由此,允许将包括一氧化碳(CO)和碳化氢(HC)的污染物释放到大气中。另外,在这些废气问题中最关心的一个是酸雾、酸性蒸汽、酸性气体和NOX(NO、NO2)的形成。传统煅烧器的又一个局限在于它们不能够充分地混合可燃烧的燃料和不易燃的处理流以产生合成的易燃及可完全燃烧的混合物。
氧气和富氧空气可以直接加入到燃烧室中,用于和废气流混合,以增加燃烧温度,可是,可以形成氧化物(尤其是硅氧化物),而这些氧化物易于沉积在燃烧室的壁上。形成的硅氧化物的量可能相当巨大,因此,在燃烧室内的逐渐沉积可能迫使增加设备的维护。
因此,提供一个改进的热反应器单元是有利的,该热反应器单元用于在废气流中提供高耐久污染物的燃烧,其通过引入高度易燃气体提供高燃烧温度,其中高度易燃气体与废气混合,以确保完全燃烧,同时减少不希望的反应产品在热反应单元内的沉积。
发明内容
本发明涉及用于在热反应器中提供半导体废气的控制燃烧的方法和系统,该系统和方法同时减少反应产品在系统内的沉积。
一方面,本发明涉及一种用于从气流中去除污染物的二级反应器,二级反应器包括:
a)上热反应室,包括:
i)外部壁;
ii)内部多孔壁,其中内部多孔壁限定中心燃烧室,并且其中内部多孔壁距外部壁足够距离定位,以限定内部空间;
iii)至少一个废气入口,其与中心燃烧室流体连通,用于将废气流引入到中心燃烧室;
iv)热装置,用于燃烧废气流,由此形成反应产品;
v)用于将脉动条件下的流体引入内部空间的装置,其中内部多孔壁提供流体从内部空间以足够的力传递进入中心燃烧室,以减少反应产品在内部多孔壁上的沉积;
b)下反应室,包括:
i)气流室,与中心燃烧室流体连通,气流室包括用于通过其传递(pass)废气流和反应产品的入口和出口;
ii)至少一个氧化剂入口,定位成将氧化剂引入气流室;以及
iii)流体涡动器,定位靠近气流室的入口,其中流体涡动器包括在气流室的内表面上产生向下流动的流体膜,由此减少微粒固体在内表面上的沉积和累积。
另一方面,本发明涉及一种用于控制废气流中气体污染物燃烧的系统,系统包括:
a)上热反应室,包括:
i)外部壁;
ii)内部多孔壁,其中内部多孔壁限定中心燃烧室,并且其中内部多孔壁距外部壁足够距离定位,以限定内部环形空间;
iii)用于将流体以脉动方式引入内部环形空间的装置;其中内部多孔壁提供流体内部环形空间以足够的力或速度传递到中心燃烧室,以减少反应产品在内部多孔壁上的沉积;
iv)热装置,用于燃烧废气流,由此形成反应产品;
v)至少一个废气入口,用于将废气流引入上热反应器中,废气入口包括管道,一部分管道终止于中心燃烧室内,其中一部分管道位于管中,管突伸出管道的端部之外,以在管内限定用于火焰形成的室,管包括与中心燃烧室连通的开口端部;
b)下反应室,包括:
i)气流室,与中心燃烧室流体连通;
ii)至少一个氧化剂入口,定位成将氧化剂引入气流室;以及
iii)流体涡动器,定位在中心燃烧室和气流室之间,其中流体涡动器包括用于在气流室的内表面上产生向下流动的流体膜,由此减少微粒固体在内表面上的沉积和累积。
优选地,流体涡动器包括:
i)外壳体,具有顶板、与中心燃烧室流体连通的中心开口;
ii)位于外壳体内的锥形挡板,包括内表面和中心开口,中心开口一般与气流室的内表面对准,锥形挡板一般与外壳体的内表面同心对准,以形成同心室;以及
iii)流体入口,布置成将液体切线引入同心室,由此用流体填充同心室,以产生涡流运动,引起流体上升并溢出锥形挡板进入气流室,以在锥形挡板的内表面上形成片状流体,片状流体向下流动到气流室的内表面上。
通过如此设计,进入气流室的气流被阻止与结构下部分中的壁直接接触。从涡动器落下的水膜阻止微粒固体在气流室的内壁表面上累积。在这样壁表面的运动流体流向下运载气流中与水膜接触的微粒,以从气流室中释放。
在上反应室中内部多孔壁可以包括烧结陶瓷体、烧结金属或任何这样的材料,该材料具有遍及其的用于流体通过其传递的小孔,无论孔大小或网孔大小。优选地,孔均匀分布遍及该材料。该材料可以具有这样的孔或穿孔,其大小允许流体以足够的速度容易地通过内部壁喷射到燃烧室,以减少反应产品向燃烧室的内表面的运动。例如,每平方厘米可以有40到1400个量级的穿孔,该穿孔的直径有穿孔的数量确定。
在另外方案中,内部多孔壁可以包括具有多个锥形突出,锥形突出具有一般漏斗状的构造,其在燃烧室的方向上变窄。这些锥形孔提供流体进入中心燃烧室的通道,同时减少进入内部环形空间或沉积在中心燃烧室的内表面上的任何流体或反应产品的回流。
外部壁和内部多孔壁之间的分隔提供足以在本质上整个暴露的内部多孔壁上分布气体(有选地,压力下)的内部空间。在另外方案中,内部多孔壁可以包括用于将气体引入中心燃烧室的多个孔或喷嘴。
流体可以是任何气体,诸如空气和/或惰性气体,该气体优选地加压到合适压力,喷射上的压力足以减少在中心燃烧室的内表面上的沉积。操作中,可加压气体在足够的压力下,以一定速度喷射通过内部多孔壁,该速度高于气流内颗粒或腐蚀气体靠近上反应室中壁的速度,由此在燃烧室中邻近内多孔壁产生抑制颗粒向燃烧室的内表面运动的区域。一般地,气体可以加压到从约50psig到约600psig的范围,更优选地,从约60psig到约100psig,但是,这由本领域一般技术人员通过确定气流进入燃烧室的流率的测量来容易地调节。因此,气体通过内部多孔壁逸出的速度可以调节等于或大于燃烧室中气流中的任何反应产品的速度。
优选地,通过内部多孔壁的通道喷射进入燃烧室的流体是以脉动方式。一般地,喷射的流体的脉动持续时间从约3ms到约1s,更优选地,从约20ms到约100ms。
又一方面,本发明涉及一种用于在二级热反应器中控制废气流中气体污染物的燃烧的方法,包括:
i)通过至少一个废气入口端将废气流引入到上热反应器;
ii)提供至少一种可燃烧燃料,用于和废气流混合,以形成富燃料的可燃烧气流混合物;
iii)在燃烧室中点燃富燃料的可燃烧气流混合物,以引起氧化反应产品的形成;
iv)在富燃料的可燃烧气流混合物燃烧的同时,将附加流体喷射进入燃烧室,其中附加流体以脉动方式和在燃烧室内包围(circumventive)的图案喷射,由此抑制反应产品在燃烧室的内表面上的沉积;
v)使反应产品流动到下反应室,同时将含空气的气体引入到流中,由此提供贫燃料混合物;以及
vi)使反应产品流流动通过水涡动器,水涡动器定位靠近下反应室的进口,其中从水涡动器落下的水抑制反应产品在下反应室的内表面上的沉积。
本发明的其他方面与优点通过后续的描述与权利要求即更加明确。
附图说明
图1是根据本发明的二级热反应器的部分剖面正视图。
图2是根据本发明的具有集成燃烧器的进口喷嘴的部分剖面图,其中入口喷嘴用于将废气流从处理工厂引入到热反应器中。
图3是上热反应室的部分剖面图,其示出了将液体从内部环形空间传输到中心燃烧室中。
具体实施方式
参考图1,示出了代表这时描述的系统的二级反应器10。示出了上反应室12和下反应室14。上反应室包括用于引入废气流的至少一个废气入口15。在本实施例中,还有的独立的附加气体入口16、17,用于引入附加的可燃性气体或氧化剂,以提供富燃料的气体,并由此增加系统内的燃烧温度用于破坏耐久的污染物。
上反应室另外还包括外部壁20和内部壁22,其中外部壁20由一般的金属材料制成,而内部壁22由多孔材料制成,并包围中心燃烧室24。内部多孔壁定位成与外部壁具有充分的距离,以限定内部环形空间26。环形空间26被设置用于引入液体(优选是加压的),该液体通过端口27进入环形空间,然后通过内部多孔壁27离开环形空间,以通过内部多孔壁向外脉动(pulse)30和/或沿内部多孔壁22的内表面向下波动。液体通过内部多孔壁而进入中心燃烧室的脉动喷射减少和/或缓解了微粒物质在中心燃烧室的内表面上的积累。优选地,脉动气体以某一速度通过内部多孔壁离开,该速度超过可能在燃烧室内的气流中并接近内部壁的任何粒子的速度,由此在邻近燃烧室的内部壁引起无沉积区域,并减少在燃烧室的内表面上的任何粒子沉积。
具有任何夹带粒子的混合气体离开上热室,流动进入下反应室14,下反应室14包括气流室32和用于引入氧化剂的至少一个入口34,优选地,以足以将来自中心燃烧室的气流从富燃料转变成贫燃料混合物的量引入氧化剂。下反应室另外还包括液体涡动器33,在液体涡动器33中,液体通过入口38切线进入外同心室36,以产生涡流运动,这引起液体上升并溢出挡板40进入气流室32中,以在气流室的内表面上保持持续的液膜,由此减少在挡板40和气流室32的内表面上的沉积。
图2示出了用于将待处理的废气流引入二级热反应系统中的废气入口15。在本实施例中,具有多个独立的气体入口16、17,用于燃料气体和/或氧化剂的引入,燃料气体和/或氧化剂用来与废气流混合,以提供富燃料混合物,从而增燃烧温度。废气入口管15持续通过中心燃烧室的反应器壁44,终止于延伸部分45。混合的气体离开延伸部分45,但并不直接进入中心燃烧室24,而是进入用于在其中热燃烧和/或氧化的同心管46。优选地,通过传统类型的引燃器促进管46中的燃烧,引燃器定位于管46内或者接近管46的下游端,并利用火花塞或热表面用来点燃。燃料和燃烧辅助气体(例如,丙烷、甲烷或氢气和空气)的混合流可以通过通道16和/或17提供,并与喷射到入口15中的废气流混合。
在替代方案中,以任何合适方式(诸如电阻加热、红外辐射、微波辐射、对流热传递或固体导电)加热的电加热单元可以用在本发明中。可以选择气体和气流的混合物的温度,使得可以在同心管46、24或两者内产生火焰。
可以利用入口16来在废物入口管和反应室之间引入空气,用来与废气流混合。设置入口17,用于引入作入易燃燃料的氧气或中性气体,用于将燃烧温度增加到中足够的反应温度,用于废气流的纠正。分开的入口允许控制氧化,减少不相容气体混合的可能性,并允许独立于相邻入口利用的这些参数控制有效入口压力。
参考图3,示出了根据本发明的上热反应室。外部壁20可以是任何材料,只要这种材料具有预定的耐热性和强度,并且其可以通过焊接、法兰耦合等在接合处紧固地连接。内部多孔壁22可以包括任何多孔材料,只要这种多孔材料满足耐热性和强度的要求,其可以包括具有足够用于将液体从环形空间传输到中心燃烧室中的多孔率的烧结陶瓷或烧结金属等。烧结陶瓷可以包括,但不限于MgAl2O4、Al2O3或SiC,其中多孔材料具有从约30%到约80%的多孔率,并且孔半径大小从约15nm到约20nm变化。
废气流通过反应器顶部的入口15(未示出)进入,并且在管46(未示出)中燃烧后进入中心燃烧室24。在脉动条件下将另外的气体或流体通过内部多孔壁22引入到中心燃烧室24,如箭头30所示。气体或流体通过入口27引入到处部壁和内部壁22之间形成的环形空间26。保留在环形空间中的流体通过内部多孔壁22以足够的速度和/或压力移动或扩散至中心燃烧室,以邻近中心燃烧室的内表面引起无沉积区域,由此减少在中心燃烧室的内表面上不希望的反应产品的沉积。
优选地,脉动气体或流体被加压和脉动通过内部壁22或以周期路径沿着壁,使得颗粒不过份地累积或聚结成大的并且难以去除的沉积物。脉动幅度和周期取不应得于颗粒形材料的类型和数量、反应器的温度,并且可以容易地由本领域一般技术人员确定。
流体入口27定位于外部壁20上,提供供应到环形空间26的加压流体(诸如,压缩空气)。在替代的方案中,可以使用沿处部壁的长度方向上的多个入口,以将加压流体均匀分布和引入到环形空间。
加压流体可以包括任何气体(诸如,空气和惰性气体),气体被压缩到合适压力,使得气体可以通过内部多孔壁22的孔,以减少和/或去除不希望的反应产品,同时不影响中心燃烧室中的燃烧处理。
加压液体可以包括氧化剂(诸如,清洁干燥空气(CDA)),氧化剂可以供应关系加入到入口27,由此引入的空气流动进入外部壁20和内部多孔壁22之间的环形空间。另外,空气可以加热到合适的温度,然后流经内部多孔壁22中的孔口或孔。如此,氧化剂可以加入并与废气混合,形成可氧化的废气,以用于在反应器中的热氧化。
流体优选地以脉动方式喷射到燃烧室。本发明中可以使用任何能够以脉动方式引入流体的装置,其中脉动方式具有从约3ms到约1s的脉动持续时间。
脉动条件以连续脉动序列的方式供应,其中每个脉动序列中的气体量可以按照每个脉动持续时间的时间间隔来控制。脉动序列之间的时间间隔可以以这样的方式调节,该方式导致可规定的气体平均流量。到内部空间的气体的总流量可以通过调节各个脉动序列之间的时间间隔来调节。如图3所示,调节单元23(优选为微处理器)与控制装置25(例如,阀)通信,用于以这这样的方式调节气流。还可以包括流量计,以产生信号并将信号传递到调节单元23,这个流量信号可以充当调节每个气体脉动中体积的反馈信号。每个气体脉动利用控制装置(阀)25根据微处理器调节单元23的输入程序打开的事实而初始化,当来自流量计的信号显示希望体积已经通过流量计时,每个脉动可以关闭或终止。操作者可以根据进来的气体的性能(诸如,速度、温度或压力)来调节调节单元中的脉动持续时间。
在另一个优选实施例中,通过将水引入到环形空间26用于脉动通过内部多孔壁22或沿壁脉动,可以减轻颗粒沉积。在气流流动通过内部多孔壁的情况下,软化水可以接触环形空间26中的多孔壁的背部,通过毛细作用进入并通过多孔材料。水朝向热的内表面迁移,经由壁材料的热传导吸收来自热的反应器气体的热量。随着热量增加和水迁移更接近燃烧室的热的内表面,水在对多孔材料中和燃烧室的内表面附近转化成水汽,结果,高体积的蒸汽然后从内壁以足够的力喷射,以去除附着的微粒沉积。可以流进环形空间的水和水汽可以是周期性的或连续的。连续引入环形空间的水提供内部多孔壁22浸入到水中,由此,将多孔壁的整个表面暴露到毛细现象的效用,并提供补充已经从多孔壁22的表面蒸发的水。
在周期流的情况下,热条件的变化可以引起有差别的热膨胀力,由此有助于强附着微粒的破裂和去除。因为壁材料中的毛细力,可以实现相当大的颗粒去除力或压力,即使水源压力较低。
对于水汽沿壁流动的情况,软化水经由热量转化成水汽,水汽然后分配通过固定或可移动的喷嘴,以去除附着到壁表面的微粒。通过脉动喷嘴,热差别膨胀效应可以帮助破坏和去除壁沉积。
内部多孔壁22可以是合适的多孔结构,例如可以包括多孔烧结金属、穿孔的金属片、多孔塑料或多孔陶瓷壁。优选地,多孔材料提供足够大小的孔,用于流体通过其的传递,并且例如可以在从约0.5微米到约30微米的范围内。
参考图1,反应的气体在室的底部通过冷去水的涡流离开上反应室。水涡动单元一般包括顶板50、外壳36和一般锥形的挡板40。外壳36包括液体入口38。液体入口38相对于外壳36如此布置,使得当液体切线地引入到外壳36中时,用液体填充同心室37,以发生涡流运动,这引起液体上升并溢出锥形的挡板40,以在挡板的内表面上形成薄片状液体,该液体向下流到气流室39的内表面,由此冷却内表面,并减少微粒在其上的沉积。
虽然参照示例性实施例和特征已经在这里不同地描述了本发明,但是应当理解上面描述的实施例和特征并不意图限制本发明,并且,根据这公开的内容,本领域的一般技术人员将容易的作出其他的变化、修改和其他实施例。因此,本发明将概括地解释为与后附的权利要求一致。
Claims (27)
1.一种用于从气流中去除污染物的二级反应器,所述二级反应器包括:
a)上热反应室,包括:
i)外部壁;
ii)内部多孔壁,其中所述内部多孔壁限定中心燃烧室,并且其中所述内部多孔壁距所述外部壁足够距离定位,以限定内部空间;
iii)至少一个废气入口,其与所述中心燃烧室流体连通,用于将废气流引入到所述中心燃烧室;
iv)热装置,用于燃烧所述废气流,由此形成反应产品;
v)用于将脉动条件下的流体引入所述内部空间的装置,其中所述内部多孔壁使所述流体从所述内部空间以足够的力传递进入所述中心燃烧室,以减少反应产品在所述内部多孔壁上的沉积;
b)下反应室,包括:
i)气流室,与所述中心燃烧室流体连通,所述气流室包括用于通过其传递(pass)废气流和反应产品的入口和出口;
ii)至少一个氧化剂入口,定位成将氧化剂引入所述气流室;以及
iii)流体涡动器,定位靠近所述气流室的所述入口,其中所述流体涡动器包括在所述气流室的内表面上产生向下流动的流体膜,由此减少微粒固体在所述内表面上的沉积和累积。
2.如权利要求1所述的二级反应器,其中定位在所述外部壁和所述内部多孔壁之间的所述内部空间是内部环形空间。
3.如权利要求2所述的二级反应器,其中引入所述内部环形空间的所述流体是加压的。
4.如权利要求1所述的二级反应器,其中脉动条件下的所述流体从下列组中选择,所述组包括水、空气、清洁干燥空气以及清洁浓缩空气。
5.如权利要求4所述的二级反应器,其中所述流体是水。
6.如权利要求2所述的二级反应器,其中所述流体在周期性脉动的状态下喷射到所述中心燃烧室。
7.如权利要求1所述的二级反应器,其中所述脉动条件包括从约20ms到100ms的脉动持续时间。
8.如权利要求1所述的二级反应器,还包括至少一个附加气体入口,用于引入用来与废气流混合的可燃烧燃料或氧化剂。
9.如权利要求8所述的二级反应器,其中所述可燃烧燃料是氧、丙烷、甲烷或氢。
10.如权利要求1所述的二级反应器,其中所述液体涡动器包括:
(i)外壳体,具有顶板、与所述中心燃烧室流体连通的中心开口;
位于所述外壳体内的锥形挡板,包括内表面和中心开口,其中所述中心开口一般与所述气流室的所述内表面对准,所述锥形挡板一般与所述外壳体的所述内表面同心对准,以形成同心室;以及
(ii)流体入口,布置成将液体切线引入所述同心室,由此用流体填充所述同心室,以产生涡流运动,引起所述流体上升并溢出所述锥形挡板,以在所述锥形挡板的所述内表面上形成片状流体,所述片状流体向下流动到所述气流室的所述内表面上。
11.如权利要求10所述的二级反应器,其中所述锥形挡板的所述内表面上的所述片状流体抑制进入的气流和所述气流室的所述内表面的接触,由此阻止反应产品在所述内表面上的沉积。
12.如权利要求1所述的二级反应器,其中所述内部多孔壁由选自下列组的材料制造,所述组包括烧结陶瓷、烧结金属、多孔金属材料或多孔聚合材料。
13.如权利要求12所述的二级反应器,其中所述内部多孔壁包括均匀分布在所述多孔材料中的孔。
14.如权利要求1所述的二级反应器,其中所述外部壁和所述内部多孔壁分开足够的距离,以提供环形空间和分布用于通过所述内部多孔壁的加压气体。
15.如权利要求14所述的二级反应器,其中所述内部多孔壁包括多个孔,所述孔用于加压气体通过所述内部多孔壁进入所述中心燃烧室的通道。
16.如权利要求2所述的二级反应器,其中所述流体压缩到合适压力,以便于用足够减少微粒在所述中心燃烧室的所述内表面上沉积的力来脉动喷射所述流体。
17.如权利要求16所述的二级反应器,其中所述压力从约60psig到约100psig。
18.如权利要求15所述的二级反应器,其中所述多个孔包括锥形突出。
19.一种用于控制废气流中气体污染物燃烧的消除系统,所述系统包括:
a)上热反应室,包括:
i)外部壁;
ii)内部多孔壁,其中所述内部多孔壁限定中心燃烧室,并且其中所述内部多孔壁距所述外部壁足够距离定位,以限定内部环形空间;
iii)用于将流体以脉动方式引入所述内部环形空间的装置;
iv)至少一个废气入口,用于将所述废气流引入所述上热反应器中,所述废气入口包括管道,一部分所述管道终止在所述中心燃烧室内,其中所述一部分所述管道位于管中,所述管突伸出所述管道的端部之外,以在所述管内限定用于火焰形成的室,所述管包括与所述中心燃烧室连通的开口端部;
b)下反应室,包括:
i)气流室,与所述中心燃烧室流体连通;
ii)至少一个氧化剂入口,定位成将氧化剂引入所述气流室;以及
iii)流体涡动器,定位在所述中心燃烧室和所述气流室之间,其中所述流体涡动器包括:
(1)外壳体,具有顶板、与所述中心燃烧室流体连通的中心开口;
(2)位于所述外壳体内的锥形挡板,包括内表面和中心开口,所述中心开口一般与所述气流室的所述内表面对准,所述锥形挡板一般与所述外壳体的所述内表面同心对准,以形成同心室;以及
(3)流体入口,布置成将液体切线引入所述同心室,由此用流体填充所述同心室,以产生涡流运动,引起所述流体上升并溢出所述锥形挡板,以在所述锥形挡板的所述内表面上形成片状流体,所述片状流体向下流动到所述气流室的所述内表面上。
20.如权利要求19所述的消除系统,其中所述内部多孔壁使所述流体从所述内部环形空间以足够的力传递到所述中心燃烧室,以减少反应产品在所述内部多孔壁上的沉积。
21.如权利要求19所述的消除系统,其中所述内部多孔壁包括从约30%到约80%的多孔率。
23.如权利要求19所述的消除系统,其中所述流体从下列组中选择,所述组包括水、空气、清洁干燥空气以及清洁浓缩空气。
24.如权利要求19所述的消除系统,其中所述流体是水。
25.如权利要求20所述的消除系统,其中通过上述内部多孔壁喷射到所述中心燃烧室的所述流体包括水汽。
26.如权利要求19所述的消除系统,还包括至少一个附加气体入口,用于引入可燃烧燃料或氧化剂。
27.如权利要求26所述的消除系统,其中所述可燃烧燃料是氧、丙烷、甲烷或氢。
28.一种用于在二级热反应器中控制废气流中气体污染物的燃烧的方法,包括:
i)通过至少一个废气入口将所述废气流引入到上热反应器;
ii)提供至少一种可燃烧燃料,用于和所述废气流混合,以形成富燃料的可燃烧气流混合物;
iii)在燃烧室中点燃所述富燃料的可燃烧气流混合物,以引起反应产品的形成;
iv)在所述富燃料的可燃烧气流混合物燃烧的同时,将附加流体喷射到所述燃烧室,其中所述附加流体以脉动方式和在所述燃烧室内的旋转图案喷射,并且所述流体以超过所述反应产品靠近所述燃烧室的所述内表面的力喷射,由此抑制所述反应产品在所述内表面上的沉积;
v)使反应产品流动到下反应室,同时将含空气的气体引入到所述反应产品流,由此提供贫燃料混合物;以及
vi)使所述反应产品流流动通过水涡动器,所述水涡动器定位靠近所述下反应室的进口,其中从所述水涡动器落下的水抑制所述反应产品在所述下反应室的所述内表面上的沉积。
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- 2004-12-16 CN CNA200480038033XA patent/CN1997439A/zh active Pending
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- 2004-12-16 JP JP2006545451A patent/JP2007519878A/ja active Pending
- 2004-12-16 MY MYPI20045188A patent/MY140332A/en unknown
- 2004-12-16 SG SG200809299-1A patent/SG149031A1/en unknown
- 2004-12-16 WO PCT/US2004/042334 patent/WO2005062772A2/en active Application Filing
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2007
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Also Published As
Publication number | Publication date |
---|---|
JP2007519878A (ja) | 2007-07-19 |
US20050135984A1 (en) | 2005-06-23 |
TW200526312A (en) | 2005-08-16 |
US7569193B2 (en) | 2009-08-04 |
SG149031A1 (en) | 2009-01-29 |
EP1709153A4 (en) | 2009-01-28 |
KR20060132872A (ko) | 2006-12-22 |
WO2005062772A3 (en) | 2007-01-18 |
MY140332A (en) | 2009-12-31 |
EP1709153A2 (en) | 2006-10-11 |
WO2005062772A2 (en) | 2005-07-14 |
US20090010816A1 (en) | 2009-01-08 |
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