CN101069041B - 在工艺污染物减量过程中用以降低颗粒沉积的反应器设计 - Google Patents
在工艺污染物减量过程中用以降低颗粒沉积的反应器设计 Download PDFInfo
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- F23G7/061—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases with supplementary heating
- F23G7/065—Incinerators or other apparatus for consuming industrial waste, e.g. chemicals of waste gases or noxious gases, e.g. exhaust gases with supplementary heating using gaseous or liquid fuel
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Abstract
本发明提供当减少不希望的反应产物在处理系统中沉积时,一种用于气态污染物的控制燃烧与分解的系统与方法。典型的系统包含一个新颖的热反应室设计,其具有堆栈的有孔陶瓷环,例如气体的流体可以被导入堆栈的有孔陶瓷环以沿着此热反应室的内壁而形成一边界层,借此减少颗粒物在其上的累积。系统可还包含导入来自中央喷口的流体以改变此热反应室内部的空气动力学。
Description
技术领域
本发明涉及一种用以减少工业排放流体的改良系统与方法,例如在半导体制造过程中减少反应产物沉积产生的废气,同时减少于处理系统中反应产物的沉积。
背景技术
由制造半导体材料、组件、产品、内存而产生的气态排放物包含相当多种类的化合物组成。这些化合物包含无机与有机化合物、光刻胶与其它试剂的分解产物、以及种类广泛的其它气体,这些气体来自即将排放至大气中的废气。
半导体制造工艺利用种类广泛的化学物,其中有许多化学物具有相当低的人体耐受度。这些化学物包含锑、砷、硼、锗、氮、磷、硅、硒、硅烷、硅烷与三氢化磷混合、氩、氢、有机硅烷、卤硅烷、卤素、有机金属与其它有机化合物的气体氢化物。
卤素,例如氟(F2)及其它氟化物,在这些需要减少的化合物中属于特别难以处理的一种。电子工业使用全氟化合物(PFCs)于晶片工艺工具中以移除沉积后的残余物以及用以蚀刻薄膜。PFCs对于全球暖化有重大影响而电子工业正全力减少这些气体的排放。最常使用的PFCs包含,但不限于,四氟化碳、六氟乙烷、六氟化硫、全氟丙烷、丁烯、丁醛以及三氟化氮。实际上,PFCs在等离子体中分解以产生高反应性氟离子与氟自由基,此可进行真正的清洗以及/或蚀刻。由工艺运作中产生的排放物大部分包含氟气、四氟化硅(SiF4)、氟化氢(HF)、氟化碳酰(COF2)、四氟化碳(CF4)与六氟乙烷(C2F6)。
半导体工业的重大议题在于如何将上述这些材料由排放气体中移除。当全美半导体制造厂利用涤气器或类似方式以处理排放气体时,这些工厂所使用的技术并不能移除所有有毒的或其它难以接受的杂质。
此问题的解决方法之一为燃烧工艺气体以氧化有毒材料、将其转化为较不具毒性的形式。这样的系统就处理容量上属过度设计,且无法安全处理大量的混合化学组成且会有复杂的化学反应风险。此外,传统的焚化炉通常无法进行完全燃烧,因此会释放出污染物,例如一氧化碳(CO)及碳氢化合物(HC)至大气中。还有,排放物处理所面临的最大问题之一在于排放之前会有酸雾、酸蒸气、酸气体及氮氧化物(一氧化氮、二氧化氮)等生成。传统焚化炉的另一个限制为其无法将可燃燃料与不易燃工艺流体有效混合以使此混合物易燃及完全燃烧。
氧气或富含氧空气可直接加入燃烧室中以与废气混合而增加燃烧温度,然而,氧化物,特别是硅氧化物,会因此生成且这些氧化物会沉积在燃烧室的壁上。形成的硅氧化物的重量相对地大且逐渐沉积在燃烧室上而造成不良的燃烧效率或造成燃烧室的阻塞,因此需要增加此设备的维修。视情况需要,此清除装置需要每星期或每二星期进行清洗。
本领域技术人员皆知破坏卤素气体需要高温条件。为处理此高温,公知燃烧室以陶瓷材料制作而成以在反应室中氧化排放物(参见例如由Takemura等人申请的美国专利号6,494,711,发证日为2002年12月17日)。然而,在用来消除卤素气体的高温条件下,这些周围连续的陶瓷燃烧室因为热冲击而破裂,而燃烧室的热绝缘功能因而失败。另一个选择为公知的控制分解/氧化(CDO)系统,排放物在此系统的金属镶嵌管中燃烧,然而此CDO的金属镶嵌管在高温时会产生物理性变化与腐蚀等,此高温例如为大约1260℃至1600℃可有效分解如CF4卤素化合物。
因此,需要一种可以提供高温的改良式热反应器以分解废气中具高度抗热能力的污染物,并通过导入高易燃气体以确保能大致上完全分解上述废气并同时减少反应产物沉积在热反应器中。此外,需要提供一种能承受高温及能承受用以消除废气的腐蚀条件的热反应器。
发明内容
本发明提供一种方法及系统,其用于提供在热反应器中控制分解气态的液晶显示器(LCD)与半导体废弃物,以及同时减少在系统中上述分解的粒子产物的累积。本发明另有关于一种在气态废气的分解过程中用以减少反应室破裂的改良式热反应器设计。
在一个方案中,本发明涉及一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室中导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入燃料,所述燃料用于该热反应室中的所述废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自所述热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自所述热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除,
其中所述外壁具有的多个穿孔提供横越所述热反应单元大于0.1psi的压降。
在另一个方案中,本发明涉及一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入一燃料,所述燃料用于该热反应室中的废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自所述热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自所述热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除,
其中邻近所述废气入口与所述燃料入口的穿孔的总数大于邻近所述水淬单元的穿孔的总数。
此外,所述热反应器进一步包括:一设置在所述外壁与所述有孔陶瓷内壁之间的纤维材料。
进一步地,所述纤维材料包含选自由尖晶石纤维、玻璃棉及铝硅酸盐所组成组的材料。
此外,所述内壁包括至少20个环片段。
此外,所述至少一个废气入口具有一内壁,以及其中所述内壁由至少一层涂布材料所覆盖,该涂布材料包括含氟聚合物。
在另一个方案中,本发明涉及一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入一燃料,所述燃料用于该热反应室中的所述废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自该热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自该热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除,
其中所述热反应单元用以使较多流体流过邻近所述废气入口与所述燃料入口的有孔陶瓷内壁而较少流体流过邻近所述水淬单元的有孔陶瓷内壁。
在另一个方案中,本发明涉及一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入一燃料,该燃料用于该热反应室中的所述废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自该热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自所述热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除;并且
其中导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置用来供给一气体,该气体包括选自由惰性气体、空气、氧气以及臭氧所组成组的物质。
其中所述惰性气体为氩气。
其中所述空气为干洁空气。
其中所述空气为富含氧的空气。
在另一个方案中,本发明涉及一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入一燃料,所述燃料用于该热反应室中的所述废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自该热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自所述热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除,
其中所述热反应单元还包括一有孔陶瓷板,所述有孔陶瓷板设置于所述热反应室的内壁上或所述热反应室的内壁以内,以及其中所述有孔陶瓷板包围所述热反应室的一端。
此外,所述热反应器还包括用以引导气体通过所述有孔陶瓷板的装置,所述用以引导气体通过所述有孔陶瓷板的装置减少颗粒物沉积与累积于所述有孔陶瓷板上。
此外,所述热反应器还包括与所述热反应室流体连通的中央喷口,其中所述中央喷口接近所述至少一个废气入口与所述至少一个燃料入口,以及其中所述中央喷口用以在该废气分解过程中导入高速气体通过所述中央喷口进入所述热反应室中,以减少颗粒物在所述热反应室邻近所述中央喷口的内壁与所述有孔陶瓷板上的沉积与累积。
其中所述中央喷口用以导入选自由惰性气体、空气、氧气以及臭氧所组成组的高速气体。
其中所述惰性气体为氩气。
其中所述空气为干洁空气。
其中所述空气为富含氧的空气。
本发明的其它方案与优点可借助下述的揭示与所附权利要求书而获得了解。
附图说明
图1为根据本发明的热反应单元、入口接合处与下部冷淬室的剖面图;
图2为实施例的入口接合处的内板正视图;
图3为根据本发明的入口接合处的内板部分剖面图;
图4为根据本发明的用以导入高速气体流至热反应室的中央喷口图;
图5为根据本发明的入口接合处与热反应单元的剖面图;
图6A为根据本发明的热反应单元的陶瓷环的正视图;
图6B为陶瓷环的部分剖面图;
图6C为用以定义本发明的热反应室的相堆栈的陶瓷环的部分剖面图;
图7绘示根据本发明的穿孔金属罩片段;
图8为根据本发明的热反应单元的外部图;
图9为根据本发明的入口接合处与热反应单元接合的部分剖面图;
图10A绘示残余物沉积在公知的入口接合处的内板上;
图10B绘示残余物沉积在本发明的入口接合处的内板上;
图11A绘示残余物沉积在公知的热反应单元的内壁上;
图11B绘示残余物沉积在根据本发明的热反应单元的内壁上;
图12为根据本发明的位于热反应单元与下部冷淬室间的护罩的部分剖面图。
具体实施方式
本发明提供一种方法及系统,其用于提供在热反应器中排放气体的控制分解,以及同时减少在系统中沉积粒子的累积。本发明还涉及一种在排放气体的高温分解过程中用以减少热反应单元破裂的改良式热反应器设计。
欲消除的废气可以包含在半导体工艺中产生的物种,以及/或一些在半导体工艺中未经化学变化而释放出的物种。在此使用的“半导体工艺”名词泛指,任何/及所有在半导体及/或LCD产品制作中的工艺或单元操作;以及所有关于处理或工艺在半导体及/或LCD制造厂所产出或使用的材料的操作;以及所有与半导体及/或LCD制造厂有关的操作,但不包含主动制造(例如包含,工艺设备的调整、化学输送线的清洁、工艺工具反应室的蚀刻清洗、半导体及/或LCD制造厂的排放物的有毒气体的消除等)。
此改良式热反应系统具有如图1所示的热反应单元30与下部冷淬室150。热反应单元30包含热反应室32以及入口接合处10,其中该入口接合处包含顶板18、至少一个废气入口14、至少一个燃料入口17、选择性地至少一个氧化剂入口11、燃剂喷口15、中央喷口16以及设置在热反应室32上或以内的内板12(也可参见图3的与热反应单元分开的入口接合处图式)。入口接合处包含燃料与氧化剂气体入口,用以提供富含燃料的气体混合进入系统中以进行污染物分解。当使用氧化剂时,可以在导入热反应室之前先混合燃料与氧化剂。在此使用的燃料包含,但不限于,氢气、甲烷、天然气、丙烷、液化石油气(LPG)与城市燃气,最好是使用天然气。在此使用的氧化剂包含,但不限于,氧气、臭氧、空气、干洁空气(CDA)以及富含氧气的空气。需要处理的废气包含一种物种,其选自于由四氟化碳、六氟乙烷、六氟化硫、全氟丙烷、丁烯、丁醛、四氟化硅、氟化硼、三氟化氮、甲硼烷、乙硼烷、戊硼烷、氨、三氢化磷、硅烷、氢化硒、氟气、氯气、氯化氢、氟化氢、溴化氢、六氟化钨、氢气、三甲基铝、一级与二级胺、有机硅烷、有机金属及卤硅烷。
本发明的实施例中,废气入口14的内板可加以修改以减少颗粒累积在入口的内板处。例如,表面可以电解抛光以将机构粗糙度(Ra)的值减至小于30,较佳地是小于17,更好是小于4。减少机构粗糙度可减少颗粒黏着在表面上以及改进表面的抗蚀性。另一方面,入口的内壁可以涂布一层含氟聚合物,例如或这也可用于减少颗粒黏着在内壁上以及可有助于内壁的清洁。最好是使用纯或纯然而这些材料容易被刮损或磨损。所以在实践上,含氟化合物以下述方式涂布。首先,先利用溶剂清洗表面以移除油类等。接着,表面做喷沙处理以提供结构于其上。在结构化之后,一层纯的含氟聚合物,例如一层陶瓷填充含氟聚合物、及另一层纯的含氟聚合物依序沉积在表面上。由此得到的具含氟聚合物的膜层实质上具抗刮性。
本发明的另一个实施例中,废气入口14的管经历热泳,其中入口的内壁被加热而借此减少颗粒黏附其上。用加热器或注入每分钟50-100升流经入口的热氮气以实际加热内壁的表面而产生热泳。利用热氮气的另一个优点在于,氮气流使废气存于入口处的时间减少,借此减少于入口处的成核作用。
现有技术的入口接合处的内板包含有限多孔的陶瓷平板。此有限多孔的内板的缺点为颗粒会累积在上述的表面上,最终造成入口通道的阻塞以及燃烧侦测错误。本发明利用网状陶瓷泡沫材料当作内板12而克服上述缺陷。图2表示内板12的俯视图,此内板包含废弃入口14、燃剂喷口15、中央喷口16(将于下文中阐述)以及内板的网状陶瓷泡沫材料20。重要地,此网状陶瓷泡沫材料20具有多个孔设置贯穿其中。本发明提供一种通道使流体通过内板的孔而进入热反应室32中而减少颗粒沉积在内板12的表面上以及沉积在热反应单元30中接近内板的壁上。上述流体可以包含任何气体,其最好已压缩具合适的压力以扩散通过材料上方而减少内板上的沉积,同时不影响在热反应室中的污染物减量处理(abatementtratment)。在此用以通过内板12上的孔的气体包含空气、干洁空气、富含氧空气、氧气、臭氧及惰性气体,如氩气、氮气等,并且此气体不具有燃料于其中。此外,流体可以用连续的或脉动的模式导入,最好是以连续模式导入。
因为暴露的平坦表面积减少,因此网状陶瓷泡沫材料内板有助于防止颗粒沉积在内板上;因为内板的网状形状提供较少的附着点予颗粒物成长,此会使颗粒在达到临界重量后会离开内板;以及因为空气通过内板的孔时会形成“边界层”,此可避免颗粒移动至表面上且沉积其上。
陶瓷泡沫材料主体具有开放式细胞状结构,其特征为由网状的陶瓷结构所环绕的多个互相连接的孔洞。上述陶瓷泡沫材料主体展现出优越的物理特性,例如高延展性、低热质量、高的抗热冲击,以及在高温时的高抗蚀性。最好地,孔洞为均匀分布穿透此材料以及孔洞的大小可使流体容易通过此材料。此陶瓷泡沫材料主体应可与排放物中的PFC反应以形成高度挥发性卤素物种。陶瓷泡沫材料主体可以包含氧化铝材料、氧化镁、例如氧化锆的耐火性金属氧化物、碳化硅及氮化硅,最好是较高纯度的氧化铝材料,例如尖晶石、以及掺杂氧化钇的氧化铝材料。最好地,陶瓷泡沫材料主体为由掺杂氧化钇的氧化铝材料以及氧化钇安定氧化锆-氧化铝(YZA)所形成的陶瓷主体。陶瓷泡沫材料主体的制备为本领域技术人员所公知。
为进一步减少颗粒在内板12上成长,一种流体入口通道可以设置于入口接合处10的中央喷口16内(参见图1、图3及图5中中央喷口于入口接合处的位置)。中央喷口16的实例绘示于图4中,上述的中央喷口包含引导注射歧管24、引导端口26、引导燃烧保护板22以及扣具28,例如可与入口接合处的螺纹相合的螺纹,借此中央喷口及入口接合处可以紧密接合在一起。中央喷口16的引导火焰用以点燃入口接合处的燃剂喷口15。在中央喷口16中心的为穿透孔25,高速流体可以通过此穿透孔而被导入热反应室32中(参见图5)。高速气体改变空气动力且拉引气体以及/或颗粒朝向反应室的中心,借此使颗粒物不会接近顶板与接近靠近顶板的反应室壁。高速流体可以包含任何气体,其足以减少于热反应单元侧壁上的沉积,同时不会影响在热反应单元中的污染物减量处理。此外,流体可以用连续的或脉动的模式导入,最好是以连续模式导入。在此使用的气体包含空气、干洁空气、富含氧空气、氧气、臭氧及惰性气体,如氩气、氮气等,最好是干洁空气以及其中可以是富含氧气的。另一个实施例中,高速流体在导入热反应室之前先被加热。
在另一个实施例中,热反应单元包含一多孔陶瓷圆筒状设计,其定义出热反应室32。高速气体可以通过此热反应单元30的孔,以至少部分减少颗粒于热反应单元的内壁上成长。本发明的陶瓷圆筒包含至少二个相互堆栈的陶瓷环,如图6C所示。更可行的是,陶瓷圆筒状包含至少大约2个至大约20个互相堆栈的环。需了解的是,在本文中所称的”环”,其本身并非限定为圆形环,但也可以包含任何多边形或椭圆形的环。较佳地,这些环的形状通常为管状。
图6C为本发明的陶瓷圆筒状设计的部分剖面图,其显示具有搭接的陶瓷环36相堆栈,其中此堆栈的陶瓷环定义热反应室32。顶部陶瓷环40的设计可与入口接合处相配合。值得注意的是,此接合设计并不限于重叠接合而也可以包含斜面接合、对接、重叠接合以及舌槽接合。设置于堆栈环之间的密封垫或密封工具,可以是例如或其它高温材料,特别是若堆栈陶瓷环为对接方式接合时。较佳地,在堆栈环之间的接合重叠,例如搭接,以防止由热反应室中发散出的红外线辐射。
每一个陶瓷环可以是周围连续的陶瓷环,或者可以是至少二个片段接合在一起以形成一个陶瓷环。图6A绘示后者的实施例,其中此陶瓷环36包含第一拱形片段38及第二拱形片段40,而当第一与第二拱形片段连接在一起时,环因此形成且定义出热反应室32的部分。形成陶瓷环的材料最好与上述的陶瓷泡沫材料主体为相同的材料,例如YZA。
利用堆栈陶瓷环而定义出的热反应室的优点包含减少因热冲击而产生陶瓷环的破裂以及同时减少设备成本支出。例如,若一个陶瓷环破裂,可以立即更换此破裂环而仅需一部份成本,且热反应器可立即上线。
本发明的陶瓷环间必须相接以形成热反应单元30,借由高速气体可以通过此热反应单元30的陶瓷环孔,以至少部分减少颗粒于热反应单元的内壁上的成长。最后,有孔的金属罩可用以围绕热反应单元的堆栈陶瓷环,以及控制轴向空气流通过热反应单元的内壁孔。图7绘示本发明的有孔金属罩110的实施例,其中此金属罩具有与堆栈陶瓷环相同的形状,例如圆形圆筒状或多边形筒状,以及金属罩包含至少二个可连接片段112,其可以相接在一起以形成陶瓷圆筒的形状。二个可连接片段112包含肋状物114,例如可夹钳的延长部,其相接而施加压力于陶瓷环上,借此使环的间连接在一起。
金属罩110具有孔图案而使更多气体可以朝向热反应单元的顶部,例如靠近入口接合处10的部分,而较少气体朝向热反应单元的底部,例如下部冷淬室(参见图7及图8)。另一方面,金属罩上的有孔图案均相同。在此所使用的“穿孔”一词表示,任何穿透金属罩的开口数组,其不会影响金属罩的完整与强度,同时确保轴向气体穿透有孔内壁的流动可受控制。例如,穿孔可以是具有圆形、多边形或椭圆形或其它形状的开孔,且孔洞可以有各种长度及宽度。实施例中,穿孔直径为1/16英寸的开孔,且朝向热反应单元顶部的穿孔图案每平方英寸有一个开孔,而朝向热反应单元底部的穿孔则为每平方英寸有0.5个开孔(也就是说,每四平方英寸有2个开孔)。最好地,穿孔面积是大约为金属罩面积的0.1%至1%。金属罩由抗蚀金属构成,其包含但不限于,不锈钢、奥氏体镍-铬-铁合金例如600、601、617、625、625LCF、706、718、718SPF、X-750、MA754、783、792与HX,以及其它含镍合金,例如哈司特镍合金(Hastelloy)B、B2、C、C22、C276、C2000、G、G2、G3与G30。
参照图8,其绘示本发明的热反应单元。陶瓷环36相互堆栈在一起,至少有一层纤维状薄层缠绕在堆栈陶瓷环的外围;以及金属罩110的片段112设置于纤维状薄层周围且借由连接肋状物114而紧紧连接在一起。纤维状薄层可以是任何纤维状无机材料,其具有低热传导性、耐高温与具有可以处理金属罩与陶瓷环间热膨胀系数差异的能力。纤维状薄层材料在此包含,但不限于,尖晶石纤维、玻璃棉及其它包含铝硅酸盐的材料。另一个实例中,纤维状薄层可以是软陶瓷套筒。
实例上,流体流动为轴向地且可控制地被引导通过金属罩的穿孔、纤维状薄层与网状陶瓷环。流体由热反应单元外部至热反应单元内部可具有大约由0.05psi至大约0.30psi的压降,最好是大约0.1psi至0.2psi。流体可以用连续的或脉动的模式导入,最好是以连续模式导入以减少流体在热反应单元的再循环。可以了解的是,气体在热反应单元中再循环的停留时间越久,则会形成更大颗粒材料与增加此颗粒在热反应单元中沉积的可能性。流体可以包含任何气体,此气体足以减少于热反应单元侧壁上的沉积,同时不会影响在热反应单元中的污染物减量处理。在此使用的气体包含空气、干洁空气、富含氧的空气、氧气、臭氧及惰性气体,如氩气、氮气等。
为将流体导入热反应单元的壁以通过热反应室32,整个热反应单元30由外层不锈钢反应器罩60(参见图1)包围,因此在外层反应器罩的内壁与热反应单元的外壁之间产生一个环状空间62。将被引导通过热反应单元壁的流体可以在设置于外层反应器罩60上的端口64被导入。
参照图1,入口接合处10的内板12设置在热反应单元30的热反应室32上或以内。为确保在热反应单元内的气体不会由入口接合处与热反应单元接触的区域流泄,一种衬垫或密封垫42较佳地设置在顶部陶瓷环40与顶板18之间(参见图9)。衬垫或密封垫42可以是或一些其它的高温材料,其可防止喷出气体通过顶板/热反应单元接合处的泄漏,即,可为气体分配维持在陶瓷环后的背压。
图10A与图10B分别绘示颗粒物在现有技术的内板上以及在本发明的内板上的成长。可以看出于本发明的内板上的成长(具有流体可由其穿孔流出的网状泡沫材料板、流体可由其穿孔流出的网状陶瓷圆筒以及由中央喷口射出的高速流体)相较于现有技术的内板上的成长要大致上减少,现有技术缺乏本发明揭示的新颖改良。
图11A及图11B分别绘示现有技术的热反应单元与本发明的热反应单元。可以看出颗粒物在本发明的热反应单元内壁上的成长相较于在现有技术的热反应单元上的成长系大致上减少。当氧化相同量的排放气体,使用此述的装置与方法,在热反应单元内壁上长成的颗粒比使用现有技术单元要减少至少50%,较佳地至少70%,更佳地至少80%。
在热反应室的下游处为水淬工具,其设置于下部冷淬室150中以捕捉由热反应室中放出的颗粒物。水淬工具可以包含一种水帘,其可参见例如共同申请的美国专利申请号10/249,703,此案由Glenn Tom等人申请,名称为“Gas Processing System Comprising a WaterCurtain for Preventing Solids Deposition on Interior Walls Thereof”,在此以参考方式并入该案的完整内容。参照图1,用在水帘中的水在入口152处被导入而水帘156因而形成,借此水帘可吸收发生在热反应单元30中的燃烧反应与分解反应而产生的热,减少颗粒物生成于下部冷淬室150的壁上,且吸收由分解与燃烧反应产生的水溶性气体产物,例如二氧化碳、氟化氢等。
为确保最底部陶瓷环不会沾湿,护罩202(见图12)可以设置在下部冷淬室150的最底部陶瓷环198与水帘之间。较佳地,护罩为L型且设定为最底部陶瓷环的三维形状,例如圆筒状环;如此水不会与最底部的陶瓷环接触。护罩由抗水与抗蚀金属构成且具热稳定性,其包含但不限于,不锈钢、奥氏体镍-铬-铁合金例如600、601、617、625、625LCF、706、718、718SPF、X-750、MA754、783、792与HX,以及其它含镍合金,例如哈司特镍合金(Hastelloy)B、B2、C、C22、C276、C2000、G、G2、G3与G30。
实际上,排放物由入口接合处10的至少一个入口进入热反应室32中,以及燃料/氧化物混合由至少一个燃剂喷口15进入热反应室32中。中央喷口16的引导火焰用以激发入口接合处的燃剂喷口15,此可产生大约500℃至大约2000℃的热反应单元温度。高温可加速热反应室中的排放物的分解。此外一些排放气体可能在燃料/氧化物混合物存在之下进行燃烧/氧化。热反应室中的压力在大约0.5atm至大约5atm,较佳地稍微低于一大气压,例如大约0.98atm至大约0.99atm。
在分解/燃烧之后,排放气体行进至下部冷淬室150中,在其中水帘156可用以冷却下部冷淬室的壁以及阻止颗粒物在壁上的沉积。使用水帘156可将一些颗粒物与水溶性气体由气体流中加以移除。在水帘的更下游处,一种水喷洒装置154可以设置在下部冷淬室150中以冷却气体流,以及移除颗粒物与水溶性气体。在水喷洒装置的下游可使用较低温材料以冷却气体流,借此减少材料成本。通过下部冷淬室的气体可以释放至大气中或者可以导进额外的处理单元中,此单元包含但不限于,液体/液体洗净、物理以及/或化学吸收、煤吸附、静电除尘器、以及旋风分离器。在通过热反应单元与下部冷淬室之后,排放气体的浓度较佳地低于侦测底限,例如小于1ppm。特定地,此述的装置与方法可移除大于90%的进入污染物减量装置的有毒排放组成,较佳地可移除大于98%,更佳地移除大于99%。
在另一个实施例中,“气刀”设置于热反应单元中。参照图12,流体可以间歇地注入气刀入口206中,气刀入口位于最底部陶瓷环198与下部冷淬室150的水淬装置之间。气刀入口206可以包含于护罩202内,其可防止水沾湿上述的最底部陶瓷环198。气刀流体可以包含任何足以减少于热反应单元侧壁上的沉积,同时不会影响在热反应单元中的污染物减量处理的气体。上述的气体包含空气、干洁空气、富含氧空气、氧气、臭氧及惰性气体,如氩气、氮气等。运作上,气体可以间歇地注入通过气刀入口206且由位于与热反应室32的内壁平行设置的非常细的狭缝204离开。因此,气体沿着壁(以图12中的箭头方向)而被向上导入以使沉积颗粒物离开内壁的表面。
实例
为解说本发明的改良式热反应器的污染物减量效果,利用此热反应器而进行一系列的实验以量化污染减量的成效。可以看出大于99%的测试气体在利用此改良式热反应器后被消除,如表1所示。
测试气体 | 流速/slm | 燃料/slm | DRE,% |
六氟乙烷(C2F6) | 2.00 | 50 | >99.9% |
全氟丙烷(C3F8) | 2.00 | 45 | >99.9% |
三氟化氮(NF3) | 2.00 | 33 | >99.9% |
六氟乙烷(SF6) | 5.00 | 40 | 99.6% |
四氟化碳(CF4) | 0.25 | 86 | 99.5% |
四氟化碳(CF4) | 0.25 | 83 | 99.5% |
表1:使用上述的实施例而进行污染物减量实验的结果。
虽然本发明已于上述说明书中辅以附图实例与特征加以阐述,然而本领域技术人员可了解各种修饰、其它解读及等效改变不会脱离本发明所揭示的精神。因此本发明将根据所附的权利要求书做最广的解读。
Claims (18)
1.一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室中导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入燃料,所述燃料用于该热反应室中的所述废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自所述热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自所述热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除,
其中所述外壁具有的多个穿孔提供横越所述热反应单元大于0.1psi的压降。
2.一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入一燃料,所述燃料用于该热反应室中的废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自所述热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自所述热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除,
其中邻近所述废气入口与所述燃料入口的穿孔的总数大于邻近所述水淬单元的穿孔的总数。
3.根据权利要求2的热反应器,所述热反应器进一步包括:
一设置在所述外壁与所述有孔陶瓷内壁之间的纤维材料。
4.根据权利要求3所述的热反应器,其中所述纤维材料包含选自由尖晶石纤维、玻璃棉及铝硅酸盐所组成组的材料。
5.根据权利要求2的热反应器,其中所述内壁包括至少20个环片段。
6.根据权利要求2的热反应器,其中所述至少一个废气入口具有一内壁,以及其中所述内壁由至少一层涂布材料所覆盖,该涂布材料包括含氟聚合物。
7.一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入一燃料,所述燃料用于该热反应室中的所述废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自该热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自该热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除,
其中所述热反应单元用以使较多流体流过邻近所述废气入口与所述燃料入口的有孔陶瓷内壁而较少流体流过邻近所述水淬单元的有孔陶瓷内壁。
8.一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入一燃料,该燃料用于该热反应室中的所述废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自该热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自所述热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除;并且
其中导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置用来供给一气体,该气体包括选自由惰性气体、空气、氧气以及臭氧所组成组的物质。
9.根据权利要求8所述的热反应器,其中所述惰性气体为氩气。
10.根据权利要求8所述的热反应器,其中所述空气为干洁空气。
11.根据权利要求8所述的热反应器,其中所述空气为富含氧的空气。
12.一种从废气除去污染物的热反应器,所述热反应器包括:
一热反应单元,所述热反应单元包括:
(1)一外壁,所述外壁具有气体可穿越的多个穿孔;
(2)一有孔陶瓷内壁,所述内壁限定一热反应室,其中所述内壁包括至少两个以堆叠方式设置的环片段;
(3)至少一个废气入口,所述废气入口与所述热反应室流体连通以向所述热反应室导入废气;
(4)至少一个燃料入口,所述燃料入口与所述热反应室流体连通以导入一燃料,所述燃料用于该热反应室中的所述废气的分解过程;
(5)导引气体通过所述外壁的一或多个穿孔与所述有孔陶瓷内壁的装置,所述装置减少颗粒物在所述外壁的一或多个穿孔与所述有孔陶瓷内壁的沉积与累积;以及
一水淬单元,所述水淬单元设置于下部冷淬室中并连接至所述热反应单元且用以接收来自该热反应单元的气体流,其中所述水淬单元包括沿该水淬单元壁的水帘,所述水帘抑制颗粒物在下部冷淬室的壁上的沉积,并且其中来自所述热反应单元的气体流与在下部冷淬室中的水帘下游的水喷洒装置接触并且使颗粒物从该气体流中被去除,
其中所述热反应单元还包括一有孔陶瓷板,所述有孔陶瓷板设置于所述热反应室的内壁上或所述热反应室的内壁以内,以及其中所述有孔陶瓷板包围所述热反应室的一端。
13.根据权利要求12所述的热反应器,所述热反应器还包括用以引导气体通过所述有孔陶瓷板的装置,所述用以引导气体通过所述有孔陶瓷板的装置减少颗粒物沉积与累积于所述有孔陶瓷板上。
14.根据权利要求12所述的热反应器,所述热反应器还包括与所述热反应室流体连通的中央喷口,其中所述中央喷口接近所述至少一个废气入口与所述至少一个燃料入口,以及其中所述中央喷口用以在该废气分解过程中导入高速气体通过所述中央喷口进入所述热反应室中,以减少颗粒物在所述热反应室邻近所述中央喷口的内壁与所述有孔陶瓷板上的沉积与累积。
15.根据权利要求14所述的热反应器,其中所述中央喷口用以导入选自由惰性气体、空气、氧气以及臭氧所组成组的高速气体。
16.根据权利要求15所述的热反应器,其中所述惰性气体为氩气。
17.根据权利要求15所述的热反应器,其中所述空气为干洁空气。
18.根据权利要求15所述的热反应器,其中所述空气为富含氧的空气。
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EP1828680B1 (en) | 2012-02-01 |
TW200623226A (en) | 2006-07-01 |
TW201023244A (en) | 2010-06-16 |
IL183122A0 (en) | 2007-09-20 |
KR20070086017A (ko) | 2007-08-27 |
EP1828680A2 (en) | 2007-09-05 |
CN101069041A (zh) | 2007-11-07 |
US20060104879A1 (en) | 2006-05-18 |
US7985379B2 (en) | 2011-07-26 |
US20070274876A1 (en) | 2007-11-29 |
US7736599B2 (en) | 2010-06-15 |
WO2006053231A3 (en) | 2006-11-23 |
WO2006053231A2 (en) | 2006-05-18 |
TWI323003B (en) | 2010-04-01 |
JP2008519959A (ja) | 2008-06-12 |
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