CN1981067B - 溅射靶及通过旋转轴向锻造形成该溅射靶的方法 - Google Patents

溅射靶及通过旋转轴向锻造形成该溅射靶的方法 Download PDF

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Publication number
CN1981067B
CN1981067B CN2005800229541A CN200580022954A CN1981067B CN 1981067 B CN1981067 B CN 1981067B CN 2005800229541 A CN2005800229541 A CN 2005800229541A CN 200580022954 A CN200580022954 A CN 200580022954A CN 1981067 B CN1981067 B CN 1981067B
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China
Prior art keywords
sputtering target
preformed member
target
ingot casting
forging
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Expired - Fee Related
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CN2005800229541A
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English (en)
Chinese (zh)
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CN1981067A (zh
Inventor
约翰·P·梅特雷
罗伯特·B·福特
小查尔斯·E·威克沙姆
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Cabot Corp
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Cabot Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C14/00—Alloys based on titanium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C16/00—Alloys based on zirconium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
    • C22F1/18—High-melting or refractory metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Forging (AREA)
  • Heat Treatment Of Articles (AREA)
CN2005800229541A 2004-05-06 2005-05-06 溅射靶及通过旋转轴向锻造形成该溅射靶的方法 Expired - Fee Related CN1981067B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310169232.5A CN103255381B (zh) 2004-05-06 2005-05-06 溅射靶及通过旋转轴向锻造形成该溅射靶的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US56859204P 2004-05-06 2004-05-06
US60/568,592 2004-05-06
PCT/US2005/015839 WO2005108639A1 (en) 2004-05-06 2005-05-06 Sputter targets and methods of forming same by rotary axial forging

Related Child Applications (1)

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CN201310169232.5A Division CN103255381B (zh) 2004-05-06 2005-05-06 溅射靶及通过旋转轴向锻造形成该溅射靶的方法

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CN1981067A CN1981067A (zh) 2007-06-13
CN1981067B true CN1981067B (zh) 2013-05-08

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CN201310169232.5A Expired - Fee Related CN103255381B (zh) 2004-05-06 2005-05-06 溅射靶及通过旋转轴向锻造形成该溅射靶的方法

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Country Status (7)

Country Link
US (2) US8252126B2 (https=)
EP (1) EP1751324B1 (https=)
JP (3) JP2007536431A (https=)
KR (2) KR101196528B1 (https=)
CN (2) CN1981067B (https=)
TW (1) TWI484054B (https=)
WO (1) WO2005108639A1 (https=)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005019493A2 (en) * 2003-08-11 2005-03-03 Honeywell International Inc. Target/backing plate constructions, and methods of forming them
CN101171362B (zh) * 2005-04-28 2010-06-09 日矿金属株式会社 溅射靶
US7837929B2 (en) 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
US8250895B2 (en) * 2007-08-06 2012-08-28 H.C. Starck Inc. Methods and apparatus for controlling texture of plates and sheets by tilt rolling
EP2185300B1 (en) 2007-08-06 2018-10-24 H. C. Starck, Inc. Refractory metal plates with improved uniformity of texture
KR101626286B1 (ko) * 2008-11-03 2016-06-01 토소우 에스엠디, 인크 스퍼터 타겟 제조 방법 및 이에 의해 제조된 스퍼터 타겟
CN102091733B (zh) * 2009-12-09 2013-02-13 宁波江丰电子材料有限公司 高纯度铜靶材的制作方法
CN102791905B (zh) * 2010-03-11 2015-04-01 株式会社东芝 溅射靶及其制造方法、以及半导体元件的制造方法
US8449817B2 (en) 2010-06-30 2013-05-28 H.C. Stark, Inc. Molybdenum-containing targets comprising three metal elements
US8449818B2 (en) 2010-06-30 2013-05-28 H. C. Starck, Inc. Molybdenum containing targets
US8968537B2 (en) * 2011-02-09 2015-03-03 Applied Materials, Inc. PVD sputtering target with a protected backing plate
KR20160021299A (ko) 2011-05-10 2016-02-24 에이치. 씨. 스타아크 아이앤씨 멀티-블록 스퍼터링 타겟 및 이에 관한 제조방법 및 물품
SG2014009997A (en) * 2011-11-30 2014-04-28 Jx Nippon Mining & Metals Corp Tantalum sputtering target and method for manufacturing same
CN102513789B (zh) * 2011-12-21 2014-04-09 宁波江丰电子材料有限公司 钨靶材的制作方法
CN104204282B (zh) * 2012-03-21 2017-05-24 吉坤日矿日石金属株式会社 钽溅射靶及其制造方法以及使用该靶形成的半导体布线用阻挡膜
US9334565B2 (en) 2012-05-09 2016-05-10 H.C. Starck Inc. Multi-block sputtering target with interface portions and associated methods and articles
CN103028898A (zh) 2012-08-16 2013-04-10 宁夏东方钽业股份有限公司 一种高性能钽靶材的制备方法
CN103692151B (zh) * 2012-09-28 2016-02-24 宁波江丰电子材料股份有限公司 钛聚焦环的制造方法
CN102989856B (zh) * 2012-12-03 2014-12-10 西安超晶新能源材料有限公司 一种大型变壁厚纯钼坩埚的成型方法
US9994951B2 (en) * 2013-03-15 2018-06-12 The United States Of America, As Represented By The Secretary Of The Navy Photovoltaic sputtering targets fabricated from reclaimed materials
KR102059710B1 (ko) 2013-03-22 2019-12-26 제이엑스금속주식회사 텅스텐 소결체 스퍼터링 타깃 및 그 제조 방법
AT14157U1 (de) * 2013-12-20 2015-05-15 Plansee Se W-Ni-Sputtertarget
CN103738099B (zh) * 2013-12-26 2016-04-06 乌鲁木齐哈玛铜制工艺品有限公司 一种铜质工艺品的制作方法
WO2015146516A1 (ja) * 2014-03-27 2015-10-01 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット及びその製造方法
CN103898459B (zh) * 2014-04-16 2016-05-04 昆山海普电子材料有限公司 一种高纯钴靶材的制备方法
WO2015194517A1 (ja) * 2014-06-16 2015-12-23 しのはらプレスサービス株式会社 超伝導高周波加速空洞の純ニオブ製エンドグループ部品の製造方法
JP2018519413A (ja) 2015-04-10 2018-07-19 トーソー エスエムディー，インク． タンタルスパッターターゲットの製造方法及びこれにより製造されたスパッターターゲット
WO2016190159A1 (ja) * 2015-05-22 2016-12-01 Ｊｘ金属株式会社 タンタルスパッタリングターゲット及びその製造方法
JP6293929B2 (ja) * 2015-05-22 2018-03-14 Ｊｘ金属株式会社 タンタルスパッタリングターゲット及びその製造方法
CN108026634A (zh) * 2015-08-03 2018-05-11 霍尼韦尔国际公司 具有改善性质的无摩擦锻造铝合金溅射靶
CN109196137B (zh) 2016-06-02 2021-11-30 田中贵金属工业株式会社 金溅射靶
US10900102B2 (en) 2016-09-30 2021-01-26 Honeywell International Inc. High strength aluminum alloy backing plate and methods of making
CN106893990B (zh) * 2017-02-17 2019-02-01 南京东锐铂业有限公司 银溅射靶材组件的生产工艺
US11177119B2 (en) 2017-03-30 2021-11-16 Jx Nippon Mining & Metals Corporation Tantalum sputtering target
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
TWI809013B (zh) * 2017-12-06 2023-07-21 日商田中貴金屬工業股份有限公司 金濺鍍靶材的製造方法及金膜的製造方法
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
DE112018007187T5 (de) * 2018-03-29 2020-12-10 Honda Motor Co., Ltd. Elektrisches Fahrzeug vom Grätschsitztyp
KR102429213B1 (ko) * 2018-05-21 2022-08-04 가부시키가이샤 아루박 스퍼터링 타겟 및 그 제조 방법
CN110814246B (zh) * 2019-11-22 2021-06-25 西安庄信新材料科技有限公司 一种钛板坯的锻造工艺
CN110886001B (zh) * 2019-12-06 2020-10-27 重庆文理学院 一种有效提高钛合金耐应力腐蚀性能的方法
CN111471940B (zh) * 2020-04-29 2021-09-10 钢铁研究总院 一种高强度不锈钢转子及其制备方法
EP4527971A1 (en) * 2022-05-19 2025-03-26 Tosoh Corporation Metallic sputtering target, production method therefor, and metallic material and production method therefor
CN117620599B (zh) * 2023-10-27 2024-05-14 光微半导体材料(宁波)有限公司 一种铜溅射靶材加工装置及加工方法
TW202540463A (zh) * 2023-12-05 2025-10-16 美商塔沙Ｓｍｄ公司 具有改善的性能及可預測性之鉭濺射靶及其製造方法
US20250179624A1 (en) 2023-12-05 2025-06-05 Tosoh Smd, Inc. Tantalum sputtering target with improved performance and predictability and method of manufacturing

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1307646A (zh) * 1998-06-17 2001-08-08 庄臣马太电子公司 有细密均匀结构和晶体组织的金属件和制造它的方法

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3573185A (en) * 1968-12-16 1971-03-30 Us Army Anodic sputtering
US4121438A (en) * 1976-09-13 1978-10-24 Arthur D. Little, Inc. Coupling member for orbiting machinery
GB2041268B (en) * 1979-02-01 1982-11-17 City University And Worshipful Rotary forging machine
JPS5942910A (ja) * 1982-09-03 1984-03-09 株式会社共同機械 焼結磁性体の製造方法
CH662983A5 (de) * 1984-04-21 1987-11-13 Heinrich Schmid Maschinen Und Taumelpresse.
US4587096A (en) * 1985-05-23 1986-05-06 Inco Alloys International, Inc. Canless method for hot working gas atomized powders
JPS6277145A (ja) * 1985-09-30 1987-04-09 Kobe Steel Ltd 揺動鍛造装置
GB8603686D0 (en) * 1986-02-14 1986-03-19 Standring P M Rotary forging
JPS62183937U (https=) * 1986-05-09 1987-11-21
JPH0211642U (https=) * 1988-07-05 1990-01-24
JP2657687B2 (ja) * 1988-12-27 1997-09-24 住友重機械工業株式会社 揺動鍛造機
JP2657686B2 (ja) * 1988-12-27 1997-09-24 住友重機械工業株式会社 揺動鍛造機
JP2773976B2 (ja) * 1989-01-17 1998-07-09 アライド―シグナル・インコーポレーテッド 超靭性モノリシック窒化ケイ素
JPH02197345A (ja) * 1989-01-24 1990-08-03 Mitsubishi Nagasaki Kiko Kk 回転揺動鍛造機の回転揺動軸の回転ずれ防止装置
JPH0730193Y2 (ja) * 1989-02-09 1995-07-12 三菱長崎機工株式会社 回転揺動鍛造機の回転揺動軸の傾斜角度自動調整装置
US4851193A (en) * 1989-02-13 1989-07-25 The United States Of America As Represented By The Secretary Of The Air Force High temperature aluminum-base alloy
US5171379A (en) * 1991-05-15 1992-12-15 Cabot Corporation Tantalum base alloys
JPH05271717A (ja) * 1992-03-24 1993-10-19 Kobe Steel Ltd 高靱性高耐摩耗性クラッド薄板の製造方法
JPH05285586A (ja) * 1992-04-07 1993-11-02 Daido Steel Co Ltd フランジ製品の成形方法
JP2652334B2 (ja) * 1993-11-10 1997-09-10 株式会社レイズエンジニアリング 回転鍛造装置
EP0734294B1 (en) * 1993-12-17 1999-12-29 Wyman-Gordon Company Stepped, segmented, closed-die forging
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
JPH09143594A (ja) * 1995-11-24 1997-06-03 Sumitomo Metal Mining Co Ltd 電気接点材料
US6044685A (en) * 1997-08-29 2000-04-04 Wyman Gordon Closed-die forging process and rotationally incremental forging press
JP2000144210A (ja) * 1998-11-10 2000-05-26 Kubota Corp 金属粉末の鍛造方法
GB9825632D0 (en) * 1998-11-23 1999-01-13 Novartis Ag Organic compounds
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
BR0008908A (pt) * 1999-01-29 2001-11-27 Crs Holdings Inc Aço-ferramenta de metalurgica de pó de altadureza e artigo feito deste
JP2000276116A (ja) * 1999-03-26 2000-10-06 Sanyo Electric Co Ltd 表示装置
US6521173B2 (en) * 1999-08-19 2003-02-18 H.C. Starck, Inc. Low oxygen refractory metal powder for powder metallurgy
JP4495325B2 (ja) * 1999-12-20 2010-07-07 株式会社アーレスティ エンジンブロックの製造方法
US6331233B1 (en) * 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
DE60136351D1 (de) 2000-05-22 2008-12-11 Cabot Corp Hochreines niobmetall und erzeugnisse daraus und verfahren zu dessen herstellung
JP2002030376A (ja) * 2000-07-21 2002-01-31 Tanaka Kikinzoku Kogyo Kk Ｎｉ金属粒子分散型のＡｇ−Ｎｉ系合金開閉接点素材及びそれを使用したリレー
US6462339B1 (en) * 2000-09-20 2002-10-08 Cabot Corporation Method for quantifying the texture homogeneity of a polycrystalline material
US6539765B2 (en) * 2001-03-28 2003-04-01 Gary Gates Rotary forging and quenching apparatus and method
JP2003231936A (ja) * 2002-02-08 2003-08-19 Yamaha Motor Co Ltd エンジンのシリンダライナ
JP4883546B2 (ja) * 2002-09-20 2012-02-22 Ｊｘ日鉱日石金属株式会社 タンタルスパッタリングターゲットの製造方法
JP2004125523A (ja) * 2002-09-30 2004-04-22 Mitsubishi Heavy Ind Ltd 放射性物質貯蔵用構造強度材及びその製造方法、並びに押出成形用ビレット
WO2005071135A2 (en) * 2004-01-08 2005-08-04 Cabot Corporation Tantalum and other metals with (110) orientation
CN101171362B (zh) * 2005-04-28 2010-06-09 日矿金属株式会社 溅射靶

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1307646A (zh) * 1998-06-17 2001-08-08 庄臣马太电子公司 有细密均匀结构和晶体组织的金属件和制造它的方法

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