CN1924079A - 线型沉积源 - Google Patents
线型沉积源 Download PDFInfo
- Publication number
- CN1924079A CN1924079A CNA2006101277093A CN200610127709A CN1924079A CN 1924079 A CN1924079 A CN 1924079A CN A2006101277093 A CNA2006101277093 A CN A2006101277093A CN 200610127709 A CN200610127709 A CN 200610127709A CN 1924079 A CN1924079 A CN 1924079A
- Authority
- CN
- China
- Prior art keywords
- source
- linear type
- crucible
- heating source
- type deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 64
- 238000010438 heat treatment Methods 0.000 claims abstract description 108
- 239000000498 cooling water Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims abstract description 20
- 238000005507 spraying Methods 0.000 claims abstract description 6
- 238000001704 evaporation Methods 0.000 claims abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 239000010439 graphite Substances 0.000 claims description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 238000004873 anchoring Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 39
- 238000004062 sedimentation Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000013212 metal-organic material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000011514 reflex Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050080998A KR100645689B1 (ko) | 2005-08-31 | 2005-08-31 | 선형 증착원 |
KR10-2005-0080998 | 2005-08-31 | ||
KR1020050080998 | 2005-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1924079A true CN1924079A (zh) | 2007-03-07 |
CN1924079B CN1924079B (zh) | 2012-03-07 |
Family
ID=37654530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006101277093A Expired - Fee Related CN1924079B (zh) | 2005-08-31 | 2006-08-30 | 线型沉积源 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7905961B2 (zh) |
JP (1) | JP2007063663A (zh) |
KR (1) | KR100645689B1 (zh) |
CN (1) | CN1924079B (zh) |
TW (1) | TWI312813B (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101906610A (zh) * | 2009-06-03 | 2010-12-08 | 鸿富锦精密工业(深圳)有限公司 | 坩埚及真空蒸镀系统 |
CN101962750A (zh) * | 2009-07-24 | 2011-02-02 | 株式会社日立高新技术 | 真空蒸镀方法及其装置 |
CN101845612B (zh) * | 2008-12-18 | 2012-04-25 | 维易科精密仪器国际贸易(上海)有限公司 | 线沉积源及产生沉积流的方法 |
CN102676999A (zh) * | 2011-03-08 | 2012-09-19 | 株式会社日立高新技术 | 蒸发源及蒸镀装置 |
CN105088146A (zh) * | 2015-08-25 | 2015-11-25 | 京东方科技集团股份有限公司 | 蒸镀装置 |
CN105177508A (zh) * | 2015-10-16 | 2015-12-23 | 中国工程物理研究院激光聚变研究中心 | 一种氢化铍涂层材料的制备方法及装置 |
WO2016023280A1 (zh) * | 2014-08-14 | 2016-02-18 | 京东方科技集团股份有限公司 | 蒸镀线源 |
CN106560524A (zh) * | 2015-10-06 | 2017-04-12 | 三星显示有限公司 | 沉积源及其制造方法 |
CN109943806A (zh) * | 2017-12-20 | 2019-06-28 | 合肥欣奕华智能机器有限公司 | 一种线性蒸发源装置及蒸镀装置 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100711885B1 (ko) | 2005-08-31 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 증착원 및 이의 가열원 제어방법 |
KR100645689B1 (ko) | 2005-08-31 | 2006-11-14 | 삼성에스디아이 주식회사 | 선형 증착원 |
KR101671489B1 (ko) * | 2010-07-29 | 2016-11-02 | 삼성디스플레이 주식회사 | 유기물 증발원 및 그를 포함하는 증착 장치 |
WO2012029260A1 (ja) * | 2010-09-01 | 2012-03-08 | シャープ株式会社 | 蒸着セル及びこれを備えた真空蒸着装置 |
KR101713631B1 (ko) * | 2011-12-23 | 2017-03-09 | 주식회사 원익아이피에스 | 증발히터 고정부재를 포함하는 증발원 |
KR102067999B1 (ko) * | 2012-04-10 | 2020-01-20 | 주식회사 탑 엔지니어링 | 조립 및 해체가 용이한 히팅 조립체를 구비한 증착 장치 |
KR102124588B1 (ko) | 2012-10-22 | 2020-06-22 | 삼성디스플레이 주식회사 | 선형 증착원 및 이를 포함하는 진공 증착 장치 |
KR101470610B1 (ko) * | 2012-11-15 | 2014-12-24 | (주)비엠씨 | 증착원 이동형 증착 장치 |
KR20140078284A (ko) * | 2012-12-17 | 2014-06-25 | 삼성디스플레이 주식회사 | 증착원 및 이를 포함하는 증착 장치 |
KR102155735B1 (ko) * | 2013-07-25 | 2020-09-15 | 삼성디스플레이 주식회사 | 증착장치용 증착원 |
KR101620323B1 (ko) * | 2014-11-12 | 2016-05-13 | 에스엔유 프리시젼 주식회사 | 박막증착장치 |
KR101743691B1 (ko) * | 2015-12-30 | 2017-06-07 | 주식회사 에스에프에이 | 증착원 및 이를 포함하는 증착장치 |
KR101868463B1 (ko) * | 2017-10-11 | 2018-06-21 | 주식회사 원익아이피에스 | 외부 가열용기를 포함하는 고온 증발원 |
KR102190640B1 (ko) * | 2018-12-24 | 2020-12-14 | 주식회사 에스에프에이 | 선형 증착원 |
Family Cites Families (40)
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US2440135A (en) * | 1944-08-04 | 1948-04-20 | Alexander Paul | Method of and apparatus for depositing substances by thermal evaporation in vacuum chambers |
CH651592A5 (de) * | 1982-10-26 | 1985-09-30 | Balzers Hochvakuum | Dampfquelle fuer vakuumbedampfungsanlagen. |
US4550411A (en) * | 1983-03-30 | 1985-10-29 | Vg Instruments Group Limited | Sources used in molecular beam epitaxy |
JPS619574A (ja) | 1984-06-25 | 1986-01-17 | Nippon Telegr & Teleph Corp <Ntt> | 真空蒸着装置 |
JPS61220414A (ja) | 1985-03-27 | 1986-09-30 | Fujitsu Ltd | 分子線発生装置 |
DE3713869A1 (de) * | 1987-04-25 | 1988-11-03 | Danfoss As | Regelgeraet fuer die ueberhitzungstemperatur des verdampfers einer kaelte- oder waermepumpanlage |
JPH01159369A (ja) | 1987-12-16 | 1989-06-22 | Ulvac Corp | 真空蒸着装置 |
JPH037883A (ja) | 1989-06-02 | 1991-01-16 | Tokyo Erekutoron Kyushu Kk | 薄膜加熱装置 |
JPH0578826A (ja) | 1991-05-16 | 1993-03-30 | Nippon Steel Corp | 薄膜製造装置 |
JPH06299336A (ja) | 1993-04-09 | 1994-10-25 | Ulvac Japan Ltd | 真空蒸着用蒸発源のルツボ |
US5803976A (en) * | 1993-11-09 | 1998-09-08 | Imperial Chemical Industries Plc | Vacuum web coating |
JPH07300666A (ja) * | 1994-04-27 | 1995-11-14 | Nissin Electric Co Ltd | シリコン蒸発用分子線源およびこれに用いるるつぼの製造方法 |
IT1272249B (it) * | 1994-05-13 | 1997-06-16 | Siv Soc Italiana Vetro | Procedimento ed apparecchiatura per il deposito di strati sottili elettrocromici formati da materiali a composizione stechiometrica |
DE4439519C1 (de) | 1994-11-04 | 1996-04-25 | Fraunhofer Ges Forschung | Vorrichtung und Verfahren zum Vakuumbedampfen von Folien |
US5827371A (en) * | 1995-05-03 | 1998-10-27 | Chorus Corporation | Unibody crucible and effusion source employing such a crucible |
JPH09111441A (ja) | 1995-10-20 | 1997-04-28 | Nisshin Steel Co Ltd | Mg蒸発方法 |
US5902634A (en) * | 1996-01-17 | 1999-05-11 | Courtaulds Performance Films | Permeable solar control film |
US5858086A (en) * | 1996-10-17 | 1999-01-12 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
JPH11323552A (ja) | 1997-11-28 | 1999-11-26 | Sumitomo Chem Co Ltd | 連続蒸着フィルムの製造方法 |
EP0962260B1 (en) * | 1998-05-28 | 2005-01-05 | Ulvac, Inc. | Material evaporation system |
JP2000012218A (ja) | 1998-06-23 | 2000-01-14 | Tdk Corp | 有機el素子の製造装置および製造方法 |
US6202591B1 (en) * | 1998-11-12 | 2001-03-20 | Flex Products, Inc. | Linear aperture deposition apparatus and coating process |
JP4469430B2 (ja) | 1998-11-30 | 2010-05-26 | 株式会社アルバック | 蒸着装置 |
JP3608415B2 (ja) | 1999-01-26 | 2005-01-12 | 東洋紡績株式会社 | 蒸着材料保持手段および真空蒸着装置 |
FI118342B (fi) * | 1999-05-10 | 2007-10-15 | Asm Int | Laite ohutkalvojen valmistamiseksi |
JP4820038B2 (ja) * | 1999-12-13 | 2011-11-24 | セメクイップ, インコーポレイテッド | イオン注入イオン源、システム、および方法 |
KR100350538B1 (ko) | 2000-06-23 | 2002-08-28 | 삼성에스디아이 주식회사 | 유기 전계 발광소자 제작용 증착 장치 및 이를 이용한유기 전계 발광소자의 증착 방법 |
US20020148402A1 (en) * | 2001-04-13 | 2002-10-17 | Sindo Kou | Growing of homogeneous crystals by bottom solid feeding |
US20030015140A1 (en) * | 2001-04-26 | 2003-01-23 | Eastman Kodak Company | Physical vapor deposition of organic layers using tubular sources for making organic light-emitting devices |
KR20020086761A (ko) | 2001-05-10 | 2002-11-20 | 주식회사 엘지이아이 | 냉각수단을 구비한 고분자막 연속증착장비 |
KR20030038268A (ko) | 2001-11-10 | 2003-05-16 | (주)알파플러스 | 유기물 진공증착용 도가니형 증발원 |
DE10256038A1 (de) * | 2002-11-30 | 2004-06-17 | Applied Films Gmbh & Co. Kg | Bedampfungsvorrichtung |
KR100581860B1 (ko) | 2003-03-14 | 2006-05-22 | 삼성에스디아이 주식회사 | 박막 증착장치 |
JP2004353082A (ja) | 2003-05-08 | 2004-12-16 | Sanyo Electric Co Ltd | 蒸発装置 |
JP4447256B2 (ja) | 2003-06-27 | 2010-04-07 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP4080392B2 (ja) * | 2003-07-17 | 2008-04-23 | 東京エレクトロン株式会社 | ガス化モニタ、ミストの検出方法、成膜方法、成膜装置 |
CN100351426C (zh) | 2003-12-13 | 2007-11-28 | 鸿富锦精密工业(深圳)有限公司 | 化学气相沉积装置及沉积方法 |
CN1555089A (zh) * | 2003-12-29 | 2004-12-15 | 北京华兴微电子有限公司 | 半导体圆片快速热处理装置及使用方法 |
KR100645689B1 (ko) | 2005-08-31 | 2006-11-14 | 삼성에스디아이 주식회사 | 선형 증착원 |
KR100711885B1 (ko) | 2005-08-31 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 증착원 및 이의 가열원 제어방법 |
-
2005
- 2005-08-31 KR KR1020050080998A patent/KR100645689B1/ko not_active IP Right Cessation
-
2006
- 2006-07-12 JP JP2006191897A patent/JP2007063663A/ja active Pending
- 2006-08-24 TW TW095131093A patent/TWI312813B/zh not_active IP Right Cessation
- 2006-08-30 CN CN2006101277093A patent/CN1924079B/zh not_active Expired - Fee Related
- 2006-08-31 US US11/515,388 patent/US7905961B2/en not_active Expired - Fee Related
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101845612B (zh) * | 2008-12-18 | 2012-04-25 | 维易科精密仪器国际贸易(上海)有限公司 | 线沉积源及产生沉积流的方法 |
CN101906610A (zh) * | 2009-06-03 | 2010-12-08 | 鸿富锦精密工业(深圳)有限公司 | 坩埚及真空蒸镀系统 |
CN101906610B (zh) * | 2009-06-03 | 2013-04-24 | 鸿富锦精密工业(深圳)有限公司 | 坩埚及真空蒸镀系统 |
CN101962750A (zh) * | 2009-07-24 | 2011-02-02 | 株式会社日立高新技术 | 真空蒸镀方法及其装置 |
CN102676999A (zh) * | 2011-03-08 | 2012-09-19 | 株式会社日立高新技术 | 蒸发源及蒸镀装置 |
WO2016023280A1 (zh) * | 2014-08-14 | 2016-02-18 | 京东方科技集团股份有限公司 | 蒸镀线源 |
CN105088146A (zh) * | 2015-08-25 | 2015-11-25 | 京东方科技集团股份有限公司 | 蒸镀装置 |
CN105088146B (zh) * | 2015-08-25 | 2018-01-12 | 京东方科技集团股份有限公司 | 蒸镀装置 |
CN106560524A (zh) * | 2015-10-06 | 2017-04-12 | 三星显示有限公司 | 沉积源及其制造方法 |
CN106560524B (zh) * | 2015-10-06 | 2020-05-01 | 三星显示有限公司 | 沉积源及其制造方法 |
CN105177508A (zh) * | 2015-10-16 | 2015-12-23 | 中国工程物理研究院激光聚变研究中心 | 一种氢化铍涂层材料的制备方法及装置 |
CN109943806A (zh) * | 2017-12-20 | 2019-06-28 | 合肥欣奕华智能机器有限公司 | 一种线性蒸发源装置及蒸镀装置 |
Also Published As
Publication number | Publication date |
---|---|
US20070084409A1 (en) | 2007-04-19 |
TWI312813B (en) | 2009-08-01 |
JP2007063663A (ja) | 2007-03-15 |
US7905961B2 (en) | 2011-03-15 |
KR100645689B1 (ko) | 2006-11-14 |
CN1924079B (zh) | 2012-03-07 |
TW200714725A (en) | 2007-04-16 |
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