CN1879175A - 基于非易失性存储器单元的行为的编程方法 - Google Patents
基于非易失性存储器单元的行为的编程方法 Download PDFInfo
- Publication number
- CN1879175A CN1879175A CNA2004800307349A CN200480030734A CN1879175A CN 1879175 A CN1879175 A CN 1879175A CN A2004800307349 A CNA2004800307349 A CN A2004800307349A CN 200480030734 A CN200480030734 A CN 200480030734A CN 1879175 A CN1879175 A CN 1879175A
- Authority
- CN
- China
- Prior art keywords
- volatile memory
- memory device
- programming
- group
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Medicines Containing Material From Animals Or Micro-Organisms (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
Description
Claims (57)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/689,333 US7177199B2 (en) | 2003-10-20 | 2003-10-20 | Behavior based programming of non-volatile memory |
US10/689,333 | 2003-10-20 | ||
PCT/US2004/033984 WO2005043548A1 (en) | 2003-10-20 | 2004-10-12 | Programming method based on the behaviour of non-volatile memory cenlls |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1879175A true CN1879175A (zh) | 2006-12-13 |
CN1879175B CN1879175B (zh) | 2010-04-14 |
Family
ID=34521390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004800307349A Active CN1879175B (zh) | 2003-10-20 | 2004-10-12 | 基于非易失性存储器单元的行为的编程方法 |
Country Status (9)
Country | Link |
---|---|
US (2) | US7177199B2 (zh) |
EP (1) | EP1678722B1 (zh) |
JP (1) | JP4646534B2 (zh) |
KR (2) | KR101323843B1 (zh) |
CN (1) | CN1879175B (zh) |
AT (1) | ATE496373T1 (zh) |
DE (1) | DE602004031139D1 (zh) |
TW (1) | TWI262506B (zh) |
WO (1) | WO2005043548A1 (zh) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101430933A (zh) * | 2007-10-23 | 2009-05-13 | 三星电子株式会社 | 多比特快闪存储器件及其编程和读取方法 |
CN102138181A (zh) * | 2008-06-27 | 2011-07-27 | 桑迪士克公司 | 用最小的额外时间损失来减少干扰的改进编程算法 |
CN103069494A (zh) * | 2010-08-03 | 2013-04-24 | 桑迪士克技术有限公司 | 非易失性存储器中的自然阈值电压分布压缩 |
CN103081015A (zh) * | 2010-07-19 | 2013-05-01 | 桑迪士克技术有限公司 | 利用位线电压逐步增加来对非易失性存储器进行编程 |
US8462558B2 (en) | 2007-05-25 | 2013-06-11 | Samsung Electronics Co., Ltd. | Program and erase methods for nonvolatile memory |
CN101414483B (zh) * | 2007-08-20 | 2014-05-07 | 三星电子株式会社 | 用于非易失性存储器的编程和擦除方法 |
CN103971737A (zh) * | 2013-01-31 | 2014-08-06 | 力旺电子股份有限公司 | 闪存及其相关程划方法 |
CN104424994A (zh) * | 2013-09-10 | 2015-03-18 | 爱思开海力士有限公司 | 半导体存储器件及其编程方法 |
CN106067323A (zh) * | 2015-04-22 | 2016-11-02 | 桑迪士克科技有限责任公司 | 非易失性存储器的利用双脉冲编程的自然阈值电压压缩 |
CN109378026A (zh) * | 2012-06-13 | 2019-02-22 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN109863557A (zh) * | 2019-01-23 | 2019-06-07 | 长江存储科技有限责任公司 | 用于对存储器系统进行编程的方法 |
Families Citing this family (292)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7375930B2 (en) * | 2002-12-27 | 2008-05-20 | Magnecomp Corporation | Apparatus for PZT actuation device for hard disk drives |
US7177199B2 (en) * | 2003-10-20 | 2007-02-13 | Sandisk Corporation | Behavior based programming of non-volatile memory |
US6937520B2 (en) * | 2004-01-21 | 2005-08-30 | Tsuyoshi Ono | Nonvolatile semiconductor memory device |
US7020026B2 (en) * | 2004-05-05 | 2006-03-28 | Sandisk Corporation | Bitline governed approach for program control of non-volatile memory |
US7023733B2 (en) * | 2004-05-05 | 2006-04-04 | Sandisk Corporation | Boosting to control programming of non-volatile memory |
JP2005353171A (ja) * | 2004-06-10 | 2005-12-22 | Toshiba Corp | 半導体記憶装置及びそのブランクページ検索方法 |
US7307884B2 (en) * | 2004-06-15 | 2007-12-11 | Sandisk Corporation | Concurrent programming of non-volatile memory |
JP2006048777A (ja) * | 2004-08-02 | 2006-02-16 | Toshiba Corp | Nandフラッシュメモリおよびデータ書き込み方法 |
KR100606173B1 (ko) * | 2004-08-24 | 2006-08-01 | 삼성전자주식회사 | 불휘발성 메모리 장치의 초기화 상태를 검증하는 방법 및장치 |
US20060044926A1 (en) * | 2004-08-27 | 2006-03-02 | Nokia Corporation | Method and system for accessing performance parameters in memory devices |
JP4282636B2 (ja) | 2005-06-22 | 2009-06-24 | 株式会社東芝 | 不揮発性半導体記憶装置とそのデータ書き込み方法 |
KR100719368B1 (ko) * | 2005-06-27 | 2007-05-17 | 삼성전자주식회사 | 플래시 메모리 장치의 적응적 프로그램 방법 및 장치 |
JP4928752B2 (ja) | 2005-07-14 | 2012-05-09 | 株式会社東芝 | 半導体記憶装置 |
US7656710B1 (en) | 2005-07-14 | 2010-02-02 | Sau Ching Wong | Adaptive operations for nonvolatile memories |
US7230854B2 (en) * | 2005-08-01 | 2007-06-12 | Sandisk Corporation | Method for programming non-volatile memory with self-adjusting maximum program loop |
US7023737B1 (en) * | 2005-08-01 | 2006-04-04 | Sandisk Corporation | System for programming non-volatile memory with self-adjusting maximum program loop |
ATE521972T1 (de) * | 2005-08-01 | 2011-09-15 | Sandisk Corp | Programmierung eines nicht-flüchtigen speichers mit selbst-regulierender maximaler programmschleife |
JP2007102865A (ja) * | 2005-09-30 | 2007-04-19 | Toshiba Corp | 半導体集積回路装置 |
US7206235B1 (en) | 2005-10-14 | 2007-04-17 | Sandisk Corporation | Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling |
US7286406B2 (en) * | 2005-10-14 | 2007-10-23 | Sandisk Corporation | Method for controlled programming of non-volatile memory exhibiting bit line coupling |
US7301817B2 (en) | 2005-10-27 | 2007-11-27 | Sandisk Corporation | Method for programming of multi-state non-volatile memory using smart verify |
US7366022B2 (en) * | 2005-10-27 | 2008-04-29 | Sandisk Corporation | Apparatus for programming of multi-state non-volatile memory using smart verify |
JP4658812B2 (ja) * | 2006-01-13 | 2011-03-23 | シャープ株式会社 | 不揮発性半導体記憶装置及びその書き込み方法 |
US7499319B2 (en) * | 2006-03-03 | 2009-03-03 | Sandisk Corporation | Read operation for non-volatile storage with compensation for coupling |
US7436733B2 (en) * | 2006-03-03 | 2008-10-14 | Sandisk Corporation | System for performing read operation on non-volatile storage with compensation for coupling |
US7324387B1 (en) | 2006-04-18 | 2008-01-29 | Maxim Integrated Products, Inc. | Low power high density random access memory flash cells and arrays |
US8239735B2 (en) * | 2006-05-12 | 2012-08-07 | Apple Inc. | Memory Device with adaptive capacity |
WO2007132457A2 (en) * | 2006-05-12 | 2007-11-22 | Anobit Technologies Ltd. | Combined distortion estimation and error correction coding for memory devices |
CN103280239B (zh) | 2006-05-12 | 2016-04-06 | 苹果公司 | 存储设备中的失真估计和消除 |
US7697326B2 (en) | 2006-05-12 | 2010-04-13 | Anobit Technologies Ltd. | Reducing programming error in memory devices |
US7663925B2 (en) * | 2006-05-15 | 2010-02-16 | Micron Technology Inc. | Method and apparatus for programming flash memory |
US7440331B2 (en) * | 2006-06-01 | 2008-10-21 | Sandisk Corporation | Verify operation for non-volatile storage using different voltages |
US7457163B2 (en) * | 2006-06-01 | 2008-11-25 | Sandisk Corporation | System for verifying non-volatile storage using different voltages |
US7310272B1 (en) * | 2006-06-02 | 2007-12-18 | Sandisk Corporation | System for performing data pattern sensitivity compensation using different voltage |
US7450421B2 (en) * | 2006-06-02 | 2008-11-11 | Sandisk Corporation | Data pattern sensitivity compensation using different voltage |
US20070297247A1 (en) * | 2006-06-26 | 2007-12-27 | Gerrit Jan Hemink | Method for programming non-volatile memory using variable amplitude programming pulses |
TW200807421A (en) * | 2006-06-26 | 2008-02-01 | Sandisk Corp | Method and system for programming non-volatile memory using variable amplitude programming pulses |
WO2008026203A2 (en) * | 2006-08-27 | 2008-03-06 | Anobit Technologies | Estimation of non-linear distortion in memory devices |
KR100809333B1 (ko) * | 2006-09-04 | 2008-03-05 | 삼성전자주식회사 | 상변화 메모리 장치의 기입 검증 방법 및 그 방법을사용하는 상변화 메모리 장치 |
US7701770B2 (en) * | 2006-09-29 | 2010-04-20 | Hynix Semiconductor Inc. | Flash memory device and program method thereof |
US7821826B2 (en) * | 2006-10-30 | 2010-10-26 | Anobit Technologies, Ltd. | Memory cell readout using successive approximation |
WO2008053472A2 (en) | 2006-10-30 | 2008-05-08 | Anobit Technologies Ltd. | Reading memory cells using multiple thresholds |
JP2008130182A (ja) * | 2006-11-22 | 2008-06-05 | Sharp Corp | 不揮発性半導体記憶装置 |
US7924648B2 (en) * | 2006-11-28 | 2011-04-12 | Anobit Technologies Ltd. | Memory power and performance management |
US8151163B2 (en) * | 2006-12-03 | 2012-04-03 | Anobit Technologies Ltd. | Automatic defect management in memory devices |
US7706182B2 (en) * | 2006-12-03 | 2010-04-27 | Anobit Technologies Ltd. | Adaptive programming of analog memory cells using statistical characteristics |
US7900102B2 (en) * | 2006-12-17 | 2011-03-01 | Anobit Technologies Ltd. | High-speed programming of memory devices |
US7593263B2 (en) * | 2006-12-17 | 2009-09-22 | Anobit Technologies Ltd. | Memory device with reduced reading latency |
US7551482B2 (en) * | 2006-12-27 | 2009-06-23 | Sandisk Corporation | Method for programming with initial programming voltage based on trial |
US7570520B2 (en) * | 2006-12-27 | 2009-08-04 | Sandisk Corporation | Non-volatile storage system with initial programming voltage based on trial |
US7539052B2 (en) * | 2006-12-28 | 2009-05-26 | Micron Technology, Inc. | Non-volatile multilevel memory cell programming |
US7495962B2 (en) * | 2006-12-29 | 2009-02-24 | Sandisk Corporation | Alternating read mode |
US7440324B2 (en) * | 2006-12-29 | 2008-10-21 | Sandisk Corporation | Apparatus with alternating read mode |
US8151166B2 (en) * | 2007-01-24 | 2012-04-03 | Anobit Technologies Ltd. | Reduction of back pattern dependency effects in memory devices |
US7751240B2 (en) | 2007-01-24 | 2010-07-06 | Anobit Technologies Ltd. | Memory device with negative thresholds |
JP4996277B2 (ja) * | 2007-02-09 | 2012-08-08 | 株式会社東芝 | 半導体記憶システム |
EP2122627B1 (en) * | 2007-02-20 | 2013-01-30 | SanDisk Technologies Inc. | Dynamic verify based on threshold voltage distribution |
US7564715B2 (en) * | 2007-02-20 | 2009-07-21 | Sandisk Corporation | Variable initial program voltage magnitude for non-volatile storage |
WO2008111058A2 (en) * | 2007-03-12 | 2008-09-18 | Anobit Technologies Ltd. | Adaptive estimation of memory cell read thresholds |
US7835189B2 (en) * | 2007-03-16 | 2010-11-16 | Spansion Llc | High accuracy adaptive programming |
US7729165B2 (en) * | 2007-03-29 | 2010-06-01 | Flashsilicon, Incorporation | Self-adaptive and self-calibrated multiple-level non-volatile memories |
KR100824203B1 (ko) * | 2007-04-03 | 2008-04-21 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 프로그램 방법 |
US8001320B2 (en) * | 2007-04-22 | 2011-08-16 | Anobit Technologies Ltd. | Command interface for memory devices |
WO2008139441A2 (en) | 2007-05-12 | 2008-11-20 | Anobit Technologies Ltd. | Memory device with internal signal processing unit |
US8234545B2 (en) * | 2007-05-12 | 2012-07-31 | Apple Inc. | Data storage with incremental redundancy |
US7630246B2 (en) | 2007-06-18 | 2009-12-08 | Micron Technology, Inc. | Programming rate identification and control in a solid state memory |
KR100888844B1 (ko) | 2007-06-28 | 2009-03-17 | 삼성전자주식회사 | 프로그램 성능을 향상시킬 수 있는 플래시 메모리 장치 및그것의 프로그램 방법 |
US7508715B2 (en) * | 2007-07-03 | 2009-03-24 | Sandisk Corporation | Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
US7599224B2 (en) * | 2007-07-03 | 2009-10-06 | Sandisk Corporation | Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing |
KR101322378B1 (ko) * | 2007-07-09 | 2013-10-30 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치 및 그것의 프로그램 방법 |
US7925936B1 (en) | 2007-07-13 | 2011-04-12 | Anobit Technologies Ltd. | Memory device with non-uniform programming levels |
US8259497B2 (en) | 2007-08-06 | 2012-09-04 | Apple Inc. | Programming schemes for multi-level analog memory cells |
US8174905B2 (en) * | 2007-09-19 | 2012-05-08 | Anobit Technologies Ltd. | Programming orders for reducing distortion in arrays of multi-level analog memory cells |
WO2009095902A2 (en) | 2008-01-31 | 2009-08-06 | Densbits Technologies Ltd. | Systems and methods for handling immediate data errors in flash memory |
US8650352B2 (en) * | 2007-09-20 | 2014-02-11 | Densbits Technologies Ltd. | Systems and methods for determining logical values of coupled flash memory cells |
US7978520B2 (en) | 2007-09-27 | 2011-07-12 | Sandisk Corporation | Compensation of non-volatile memory chip non-idealities by program pulse adjustment |
US7773413B2 (en) * | 2007-10-08 | 2010-08-10 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells in the presence of temperature variations |
WO2009050703A2 (en) * | 2007-10-19 | 2009-04-23 | Anobit Technologies | Data storage in analog memory cell arrays having erase failures |
US8000141B1 (en) | 2007-10-19 | 2011-08-16 | Anobit Technologies Ltd. | Compensation for voltage drifts in analog memory cells |
US8068360B2 (en) * | 2007-10-19 | 2011-11-29 | Anobit Technologies Ltd. | Reading analog memory cells using built-in multi-threshold commands |
US8694715B2 (en) * | 2007-10-22 | 2014-04-08 | Densbits Technologies Ltd. | Methods for adaptively programming flash memory devices and flash memory systems incorporating same |
WO2009053963A2 (en) * | 2007-10-22 | 2009-04-30 | Densbits Technologies Ltd. | Methods for adaptively programming flash memory devices and flash memory systems incorporating same |
WO2009053961A2 (en) | 2007-10-25 | 2009-04-30 | Densbits Technologies Ltd. | Systems and methods for multiple coding rates in flash devices |
KR101509836B1 (ko) * | 2007-11-13 | 2015-04-06 | 애플 인크. | 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택 |
US8225181B2 (en) | 2007-11-30 | 2012-07-17 | Apple Inc. | Efficient re-read operations from memory devices |
US8341335B2 (en) | 2007-12-05 | 2012-12-25 | Densbits Technologies Ltd. | Flash memory apparatus with a heating system for temporarily retired memory portions |
WO2009072105A2 (en) * | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | A low power chien-search based bch/rs decoding system for flash memory, mobile communications devices and other applications |
US8335977B2 (en) | 2007-12-05 | 2012-12-18 | Densbits Technologies Ltd. | Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated BCH codes and/or designation of “first below” cells |
US8359516B2 (en) | 2007-12-12 | 2013-01-22 | Densbits Technologies Ltd. | Systems and methods for error correction and decoding on multi-level physical media |
US8209588B2 (en) * | 2007-12-12 | 2012-06-26 | Anobit Technologies Ltd. | Efficient interference cancellation in analog memory cell arrays |
US8276051B2 (en) | 2007-12-12 | 2012-09-25 | Densbits Technologies Ltd. | Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications |
US8456905B2 (en) | 2007-12-16 | 2013-06-04 | Apple Inc. | Efficient data storage in multi-plane memory devices |
WO2009078006A2 (en) | 2007-12-18 | 2009-06-25 | Densbits Technologies Ltd. | Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith |
KR100960479B1 (ko) * | 2007-12-24 | 2010-06-01 | 주식회사 하이닉스반도체 | 플래시 메모리 장치 및 동작 방법 |
US8085586B2 (en) * | 2007-12-27 | 2011-12-27 | Anobit Technologies Ltd. | Wear level estimation in analog memory cells |
KR101344347B1 (ko) * | 2008-01-16 | 2013-12-24 | 삼성전자주식회사 | 프로그램 시작 전압을 조절하는 불휘발성 메모리 장치,그것의 프로그램 방법, 그리고 그것을 포함하는 메모리시스템 |
US8156398B2 (en) * | 2008-02-05 | 2012-04-10 | Anobit Technologies Ltd. | Parameter estimation based on error correction code parity check equations |
US7924587B2 (en) * | 2008-02-21 | 2011-04-12 | Anobit Technologies Ltd. | Programming of analog memory cells using a single programming pulse per state transition |
US7864573B2 (en) * | 2008-02-24 | 2011-01-04 | Anobit Technologies Ltd. | Programming analog memory cells for reduced variance after retention |
KR101448851B1 (ko) * | 2008-02-26 | 2014-10-13 | 삼성전자주식회사 | 비휘발성 메모리 장치에서의 프로그래밍 방법 |
US8230300B2 (en) * | 2008-03-07 | 2012-07-24 | Apple Inc. | Efficient readout from analog memory cells using data compression |
US8059457B2 (en) * | 2008-03-18 | 2011-11-15 | Anobit Technologies Ltd. | Memory device with multiple-accuracy read commands |
US8400858B2 (en) | 2008-03-18 | 2013-03-19 | Apple Inc. | Memory device with reduced sense time readout |
JP4693859B2 (ja) * | 2008-03-21 | 2011-06-01 | 株式会社東芝 | 不揮発性半導体記憶装置及びその制御方法 |
US8972472B2 (en) * | 2008-03-25 | 2015-03-03 | Densbits Technologies Ltd. | Apparatus and methods for hardware-efficient unbiased rounding |
US7768832B2 (en) * | 2008-04-07 | 2010-08-03 | Micron Technology, Inc. | Analog read and write paths in a solid state memory device |
KR101606168B1 (ko) * | 2008-04-29 | 2016-03-24 | 샌디스크 아이엘 엘티디 | 프로그램, 검증 및, 읽기를 위한 참조 전압 레벨들의 적응적인 세팅을 갖는 비휘발성 멀티레벨 메모리 |
KR101412690B1 (ko) | 2008-05-28 | 2014-06-27 | 삼성전자주식회사 | 메모리 장치 및 메모리 프로그래밍 방법 |
EP2297739B1 (en) * | 2008-06-12 | 2015-03-04 | SanDisk Technologies Inc. | Nonvolatile memory and method for correlated multiple pass programming |
US7924613B1 (en) | 2008-08-05 | 2011-04-12 | Anobit Technologies Ltd. | Data storage in analog memory cells with protection against programming interruption |
US8498151B1 (en) | 2008-08-05 | 2013-07-30 | Apple Inc. | Data storage in analog memory cells using modified pass voltages |
US7876611B2 (en) * | 2008-08-08 | 2011-01-25 | Sandisk Corporation | Compensating for coupling during read operations in non-volatile storage |
US8332725B2 (en) | 2008-08-20 | 2012-12-11 | Densbits Technologies Ltd. | Reprogramming non volatile memory portions |
US8169825B1 (en) | 2008-09-02 | 2012-05-01 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells subjected to long retention periods |
US8949684B1 (en) | 2008-09-02 | 2015-02-03 | Apple Inc. | Segmented data storage |
US8482978B1 (en) | 2008-09-14 | 2013-07-09 | Apple Inc. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
US8000135B1 (en) | 2008-09-14 | 2011-08-16 | Anobit Technologies Ltd. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
KR101468097B1 (ko) | 2008-09-18 | 2014-12-04 | 삼성전자주식회사 | 메모리 장치 및 그것의 프로그램 방법 |
US8239734B1 (en) | 2008-10-15 | 2012-08-07 | Apple Inc. | Efficient data storage in storage device arrays |
US8045375B2 (en) | 2008-10-24 | 2011-10-25 | Sandisk Technologies Inc. | Programming non-volatile memory with high resolution variable initial programming pulse |
US8713330B1 (en) | 2008-10-30 | 2014-04-29 | Apple Inc. | Data scrambling in memory devices |
US8208304B2 (en) | 2008-11-16 | 2012-06-26 | Anobit Technologies Ltd. | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N |
US8397131B1 (en) | 2008-12-31 | 2013-03-12 | Apple Inc. | Efficient readout schemes for analog memory cell devices |
US8248831B2 (en) * | 2008-12-31 | 2012-08-21 | Apple Inc. | Rejuvenation of analog memory cells |
US8924661B1 (en) | 2009-01-18 | 2014-12-30 | Apple Inc. | Memory system including a controller and processors associated with memory devices |
US8223551B2 (en) * | 2009-02-19 | 2012-07-17 | Micron Technology, Inc. | Soft landing for desired program threshold voltage |
US8023345B2 (en) * | 2009-02-24 | 2011-09-20 | International Business Machines Corporation | Iteratively writing contents to memory locations using a statistical model |
US8166368B2 (en) * | 2009-02-24 | 2012-04-24 | International Business Machines Corporation | Writing a special symbol to a memory to indicate the absence of a data signal |
US8228701B2 (en) | 2009-03-01 | 2012-07-24 | Apple Inc. | Selective activation of programming schemes in analog memory cell arrays |
US8259506B1 (en) | 2009-03-25 | 2012-09-04 | Apple Inc. | Database of memory read thresholds |
US8832354B2 (en) * | 2009-03-25 | 2014-09-09 | Apple Inc. | Use of host system resources by memory controller |
US8458574B2 (en) * | 2009-04-06 | 2013-06-04 | Densbits Technologies Ltd. | Compact chien-search based decoding apparatus and method |
US8819385B2 (en) | 2009-04-06 | 2014-08-26 | Densbits Technologies Ltd. | Device and method for managing a flash memory |
US8238157B1 (en) | 2009-04-12 | 2012-08-07 | Apple Inc. | Selective re-programming of analog memory cells |
JP4750906B2 (ja) * | 2009-04-30 | 2011-08-17 | Powerchip株式会社 | Nandフラッシュメモリデバイスのプログラミング方法 |
US8566510B2 (en) | 2009-05-12 | 2013-10-22 | Densbits Technologies Ltd. | Systems and method for flash memory management |
US7916533B2 (en) * | 2009-06-24 | 2011-03-29 | Sandisk Corporation | Forecasting program disturb in memory by detecting natural threshold voltage distribution |
US8479080B1 (en) | 2009-07-12 | 2013-07-02 | Apple Inc. | Adaptive over-provisioning in memory systems |
US7995394B2 (en) * | 2009-07-30 | 2011-08-09 | Sandisk Technologies Inc. | Program voltage compensation with word line bias change to suppress charge trapping in memory |
US8305812B2 (en) * | 2009-08-26 | 2012-11-06 | Densbits Technologies Ltd. | Flash memory module and method for programming a page of flash memory cells |
US9330767B1 (en) | 2009-08-26 | 2016-05-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory module and method for programming a page of flash memory cells |
US8868821B2 (en) | 2009-08-26 | 2014-10-21 | Densbits Technologies Ltd. | Systems and methods for pre-equalization and code design for a flash memory |
US8995197B1 (en) | 2009-08-26 | 2015-03-31 | Densbits Technologies Ltd. | System and methods for dynamic erase and program control for flash memory device memories |
US8386739B2 (en) * | 2009-09-28 | 2013-02-26 | International Business Machines Corporation | Writing to memory using shared address buses |
US8230276B2 (en) * | 2009-09-28 | 2012-07-24 | International Business Machines Corporation | Writing to memory using adaptive write techniques |
US8495465B1 (en) | 2009-10-15 | 2013-07-23 | Apple Inc. | Error correction coding over multiple memory pages |
US8730729B2 (en) | 2009-10-15 | 2014-05-20 | Densbits Technologies Ltd. | Systems and methods for averaging error rates in non-volatile devices and storage systems |
US8724387B2 (en) | 2009-10-22 | 2014-05-13 | Densbits Technologies Ltd. | Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages |
US8626988B2 (en) * | 2009-11-19 | 2014-01-07 | Densbits Technologies Ltd. | System and method for uncoded bit error rate equalization via interleaving |
KR101616099B1 (ko) * | 2009-12-03 | 2016-04-27 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
US8174895B2 (en) * | 2009-12-15 | 2012-05-08 | Sandisk Technologies Inc. | Programming non-volatile storage with fast bit detection and verify skip |
US8677054B1 (en) | 2009-12-16 | 2014-03-18 | Apple Inc. | Memory management schemes for non-volatile memory devices |
US9037777B2 (en) * | 2009-12-22 | 2015-05-19 | Densbits Technologies Ltd. | Device, system, and method for reducing program/read disturb in flash arrays |
US8607124B2 (en) * | 2009-12-24 | 2013-12-10 | Densbits Technologies Ltd. | System and method for setting a flash memory cell read threshold |
US8694814B1 (en) | 2010-01-10 | 2014-04-08 | Apple Inc. | Reuse of host hibernation storage space by memory controller |
US8572311B1 (en) | 2010-01-11 | 2013-10-29 | Apple Inc. | Redundant data storage in multi-die memory systems |
KR101676816B1 (ko) | 2010-02-11 | 2016-11-18 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 방법 |
US8700970B2 (en) * | 2010-02-28 | 2014-04-15 | Densbits Technologies Ltd. | System and method for multi-dimensional decoding |
JP5550386B2 (ja) * | 2010-03-03 | 2014-07-16 | 株式会社東芝 | 不揮発性半導体記憶装置及びメモリシステム |
KR101662276B1 (ko) * | 2010-03-09 | 2016-10-04 | 삼성전자주식회사 | 불 휘발성 메모리 장치 및 그것의 프로그램 및 읽기 방법들 |
US8369154B2 (en) * | 2010-03-24 | 2013-02-05 | Ememory Technology Inc. | Channel hot electron injection programming method and related device |
US8467245B2 (en) | 2010-03-24 | 2013-06-18 | Ememory Technology Inc. | Non-volatile memory device with program current clamp and related method |
US8233324B2 (en) * | 2010-03-25 | 2012-07-31 | Sandisk Il Ltd. | Simultaneous multi-state read or verify in non-volatile storage |
US8463985B2 (en) | 2010-03-31 | 2013-06-11 | International Business Machines Corporation | Constrained coding to reduce floating gate coupling in non-volatile memories |
US8527840B2 (en) | 2010-04-06 | 2013-09-03 | Densbits Technologies Ltd. | System and method for restoring damaged data programmed on a flash device |
US8516274B2 (en) | 2010-04-06 | 2013-08-20 | Densbits Technologies Ltd. | Method, system and medium for analog encryption in a flash memory |
US8745317B2 (en) | 2010-04-07 | 2014-06-03 | Densbits Technologies Ltd. | System and method for storing information in a multi-level cell memory |
US9021177B2 (en) | 2010-04-29 | 2015-04-28 | Densbits Technologies Ltd. | System and method for allocating and using spare blocks in a flash memory |
US8694853B1 (en) | 2010-05-04 | 2014-04-08 | Apple Inc. | Read commands for reading interfering memory cells |
US8416624B2 (en) * | 2010-05-21 | 2013-04-09 | SanDisk Technologies, Inc. | Erase and programming techniques to reduce the widening of state distributions in non-volatile memories |
KR20110131648A (ko) * | 2010-05-31 | 2011-12-07 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 메모리 카드 및 그것의 프로그램 방법 |
JP2011258260A (ja) * | 2010-06-07 | 2011-12-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
US8572423B1 (en) | 2010-06-22 | 2013-10-29 | Apple Inc. | Reducing peak current in memory systems |
US8621321B2 (en) | 2010-07-01 | 2013-12-31 | Densbits Technologies Ltd. | System and method for multi-dimensional encoding and decoding |
US8539311B2 (en) | 2010-07-01 | 2013-09-17 | Densbits Technologies Ltd. | System and method for data recovery in multi-level cell memories |
JP5522682B2 (ja) * | 2010-07-06 | 2014-06-18 | ウィンボンド エレクトロニクス コーポレーション | 半導体メモリ |
US8467249B2 (en) | 2010-07-06 | 2013-06-18 | Densbits Technologies Ltd. | Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system |
US8595591B1 (en) | 2010-07-11 | 2013-11-26 | Apple Inc. | Interference-aware assignment of programming levels in analog memory cells |
US8351276B2 (en) | 2010-07-13 | 2013-01-08 | Freescale Semiconductor, Inc. | Soft program of a non-volatile memory block |
US9104580B1 (en) | 2010-07-27 | 2015-08-11 | Apple Inc. | Cache memory for hybrid disk drives |
US8767459B1 (en) | 2010-07-31 | 2014-07-01 | Apple Inc. | Data storage in analog memory cells across word lines using a non-integer number of bits per cell |
US8856475B1 (en) | 2010-08-01 | 2014-10-07 | Apple Inc. | Efficient selection of memory blocks for compaction |
US8694854B1 (en) | 2010-08-17 | 2014-04-08 | Apple Inc. | Read threshold setting based on soft readout statistics |
US8964464B2 (en) | 2010-08-24 | 2015-02-24 | Densbits Technologies Ltd. | System and method for accelerated sampling |
US8508995B2 (en) | 2010-09-15 | 2013-08-13 | Densbits Technologies Ltd. | System and method for adjusting read voltage thresholds in memories |
JP5259667B2 (ja) * | 2010-09-22 | 2013-08-07 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US9021181B1 (en) | 2010-09-27 | 2015-04-28 | Apple Inc. | Memory management for unifying memory cell conditions by using maximum time intervals |
US9063878B2 (en) | 2010-11-03 | 2015-06-23 | Densbits Technologies Ltd. | Method, system and computer readable medium for copy back |
US8842469B2 (en) * | 2010-11-09 | 2014-09-23 | Freescale Semiconductor, Inc. | Method for programming a multi-state non-volatile memory (NVM) |
US8850100B2 (en) | 2010-12-07 | 2014-09-30 | Densbits Technologies Ltd. | Interleaving codeword portions between multiple planes and/or dies of a flash memory device |
US8563672B2 (en) * | 2010-12-17 | 2013-10-22 | E I Du Pont De Nemours And Company | Process for producing fluorinated copolymers of (meth)acrylates and (meth)acrylic acid amine complexes |
US10079068B2 (en) | 2011-02-23 | 2018-09-18 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Devices and method for wear estimation based memory management |
EP2498258B1 (en) * | 2011-03-11 | 2016-01-13 | eMemory Technology Inc. | Non-volatile memory device with program current clamp and related method |
US8693258B2 (en) | 2011-03-17 | 2014-04-08 | Densbits Technologies Ltd. | Obtaining soft information using a hard interface |
US8990665B1 (en) | 2011-04-06 | 2015-03-24 | Densbits Technologies Ltd. | System, method and computer program product for joint search of a read threshold and soft decoding |
US8565025B2 (en) | 2011-04-25 | 2013-10-22 | Freescale Semiconductor, Inc. | Dynamic programming for flash memory |
KR20120126436A (ko) * | 2011-05-11 | 2012-11-21 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 반도체 메모리 장치의 프로그램 방법 |
US8996790B1 (en) | 2011-05-12 | 2015-03-31 | Densbits Technologies Ltd. | System and method for flash memory management |
US9195592B1 (en) | 2011-05-12 | 2015-11-24 | Densbits Technologies Ltd. | Advanced management of a non-volatile memory |
US9396106B2 (en) | 2011-05-12 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US9110785B1 (en) | 2011-05-12 | 2015-08-18 | Densbits Technologies Ltd. | Ordered merge of data sectors that belong to memory space portions |
US9501392B1 (en) | 2011-05-12 | 2016-11-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Management of a non-volatile memory module |
US9372792B1 (en) | 2011-05-12 | 2016-06-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US8667211B2 (en) | 2011-06-01 | 2014-03-04 | Densbits Technologies Ltd. | System and method for managing a non-volatile memory |
US8509001B2 (en) | 2011-06-27 | 2013-08-13 | Freescale Semiconductor, Inc. | Adaptive write procedures for non-volatile memory |
US8432752B2 (en) | 2011-06-27 | 2013-04-30 | Freescale Semiconductor, Inc. | Adaptive write procedures for non-volatile memory using verify read |
US8588003B1 (en) | 2011-08-01 | 2013-11-19 | Densbits Technologies Ltd. | System, method and computer program product for programming and for recovering from a power failure |
KR101939235B1 (ko) * | 2011-08-03 | 2019-01-17 | 삼성전자 주식회사 | 비휘발성 메모리 장치 및 그것의 프로그램 방법 |
US8553468B2 (en) | 2011-09-21 | 2013-10-08 | Densbits Technologies Ltd. | System and method for managing erase operations in a non-volatile memory |
JP2013077362A (ja) * | 2011-09-30 | 2013-04-25 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR20130042780A (ko) * | 2011-10-19 | 2013-04-29 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 동작 방법 |
JP5622712B2 (ja) * | 2011-12-09 | 2014-11-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
TWI534810B (zh) | 2011-12-09 | 2016-05-21 | Toshiba Kk | Nonvolatile semiconductor memory device |
US8996788B2 (en) | 2012-02-09 | 2015-03-31 | Densbits Technologies Ltd. | Configurable flash interface |
US8947941B2 (en) | 2012-02-09 | 2015-02-03 | Densbits Technologies Ltd. | State responsive operations relating to flash memory cells |
US8996793B1 (en) | 2012-04-24 | 2015-03-31 | Densbits Technologies Ltd. | System, method and computer readable medium for generating soft information |
US8838937B1 (en) | 2012-05-23 | 2014-09-16 | Densbits Technologies Ltd. | Methods, systems and computer readable medium for writing and reading data |
US8879325B1 (en) | 2012-05-30 | 2014-11-04 | Densbits Technologies Ltd. | System, method and computer program product for processing read threshold information and for reading a flash memory module |
KR101942863B1 (ko) * | 2012-06-19 | 2019-01-28 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
US8902667B2 (en) | 2012-07-25 | 2014-12-02 | Freescale Semiconductor, Inc. | Methods and systems for adjusting NVM cell bias conditions for program/erase operations to reduce performance degradation |
US8873316B2 (en) | 2012-07-25 | 2014-10-28 | Freescale Semiconductor, Inc. | Methods and systems for adjusting NVM cell bias conditions based upon operating temperature to reduce performance degradation |
US9142315B2 (en) | 2012-07-25 | 2015-09-22 | Freescale Semiconductor, Inc. | Methods and systems for adjusting NVM cell bias conditions for read/verify operations to compensate for performance degradation |
US9921954B1 (en) | 2012-08-27 | 2018-03-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and system for split flash memory management between host and storage controller |
US9082510B2 (en) | 2012-09-14 | 2015-07-14 | Freescale Semiconductor, Inc. | Non-volatile memory (NVM) with adaptive write operations |
US9225356B2 (en) | 2012-11-12 | 2015-12-29 | Freescale Semiconductor, Inc. | Programming a non-volatile memory (NVM) system having error correction code (ECC) |
US9442854B2 (en) | 2012-11-15 | 2016-09-13 | Elwha Llc | Memory circuitry including computational circuitry for performing supplemental functions |
US9582465B2 (en) | 2012-11-15 | 2017-02-28 | Elwha Llc | Flexible processors and flexible memory |
US20140137119A1 (en) * | 2012-11-15 | 2014-05-15 | Elwha LLC, a limited liability corporation of the State of Delaware | Multi-core processing in memory |
US9368225B1 (en) | 2012-11-21 | 2016-06-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Determining read thresholds based upon read error direction statistics |
US9069659B1 (en) | 2013-01-03 | 2015-06-30 | Densbits Technologies Ltd. | Read threshold determination using reference read threshold |
US20140198576A1 (en) * | 2013-01-16 | 2014-07-17 | Macronix International Co, Ltd. | Programming technique for reducing program disturb in stacked memory structures |
US9129700B2 (en) | 2013-01-22 | 2015-09-08 | Freescale Semiconductor, Inc. | Systems and methods for adaptive soft programming for non-volatile memory using temperature sensor |
US8971128B2 (en) | 2013-01-31 | 2015-03-03 | Sandisk Technologies Inc. | Adaptive initial program voltage for non-volatile memory |
US9224478B2 (en) | 2013-03-06 | 2015-12-29 | Freescale Semiconductor, Inc. | Temperature-based adaptive erase or program parallelism |
US20140281129A1 (en) * | 2013-03-15 | 2014-09-18 | Tal Heller | Data tag sharing from host to storage systems |
JP6179206B2 (ja) * | 2013-06-11 | 2017-08-16 | 株式会社リコー | メモリ制御装置 |
US9136876B1 (en) | 2013-06-13 | 2015-09-15 | Densbits Technologies Ltd. | Size limited multi-dimensional decoding |
US9812223B2 (en) * | 2013-06-21 | 2017-11-07 | SK Hynix Inc. | Semiconductor memory device and method of operating the same |
KR20140148132A (ko) * | 2013-06-21 | 2014-12-31 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 동작 방법 |
KR102118979B1 (ko) * | 2013-09-13 | 2020-06-05 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
US9413491B1 (en) | 2013-10-08 | 2016-08-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System and method for multiple dimension decoding and encoding a message |
US9397706B1 (en) | 2013-10-09 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System and method for irregular multiple dimension decoding and encoding |
US9348694B1 (en) | 2013-10-09 | 2016-05-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Detecting and managing bad columns |
US9786388B1 (en) | 2013-10-09 | 2017-10-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Detecting and managing bad columns |
US9536612B1 (en) | 2014-01-23 | 2017-01-03 | Avago Technologies General Ip (Singapore) Pte. Ltd | Digital signaling processing for three dimensional flash memory arrays |
US10120792B1 (en) | 2014-01-29 | 2018-11-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Programming an embedded flash storage device |
US9490023B2 (en) * | 2014-03-19 | 2016-11-08 | Apple Inc. | Mitigation of retention drift in charge-trap non-volatile memory |
US9542262B1 (en) | 2014-05-29 | 2017-01-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Error correction |
JP6282535B2 (ja) * | 2014-06-16 | 2018-02-21 | 東芝メモリ株式会社 | メモリシステムおよび制御方法 |
US9892033B1 (en) | 2014-06-24 | 2018-02-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Management of memory units |
US9584159B1 (en) | 2014-07-03 | 2017-02-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Interleaved encoding |
US9972393B1 (en) | 2014-07-03 | 2018-05-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accelerating programming of a flash memory module |
US9449702B1 (en) | 2014-07-08 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Power management |
US9524211B1 (en) | 2014-11-18 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Codeword management |
JP6394359B2 (ja) * | 2014-12-17 | 2018-09-26 | 富士通株式会社 | メモリデバイス、記憶装置及び記憶装置の診断方法 |
US10305515B1 (en) | 2015-02-02 | 2019-05-28 | Avago Technologies International Sales Pte. Limited | System and method for encoding using multiple linear feedback shift registers |
US9576665B2 (en) | 2015-03-12 | 2017-02-21 | Kabushiki Kaisha Toshiba | Semiconductor memory device and memory system |
US9564219B2 (en) | 2015-04-08 | 2017-02-07 | Sandisk Technologies Llc | Current based detection and recording of memory hole-interconnect spacing defects |
US9269446B1 (en) * | 2015-04-08 | 2016-02-23 | Sandisk Technologies Inc. | Methods to improve programming of slow cells |
US10628255B1 (en) | 2015-06-11 | 2020-04-21 | Avago Technologies International Sales Pte. Limited | Multi-dimensional decoding |
US9343156B1 (en) | 2015-06-25 | 2016-05-17 | Sandisk Technologies Inc. | Balancing programming speeds of memory cells in a 3D stacked memory |
US9851921B1 (en) | 2015-07-05 | 2017-12-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory chip processing |
KR102502234B1 (ko) * | 2015-12-03 | 2023-02-21 | 삼성전자주식회사 | 비휘발성 메모리 장치의 프로그램 방법 |
US9711211B2 (en) | 2015-10-29 | 2017-07-18 | Sandisk Technologies Llc | Dynamic threshold voltage compaction for non-volatile memory |
US9954558B1 (en) | 2016-03-03 | 2018-04-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Fast decoding of data stored in a flash memory |
US9852800B2 (en) * | 2016-03-07 | 2017-12-26 | Sandisk Technologies Llc | Adaptive determination of program parameter using program of erase rate |
US10381094B2 (en) | 2016-10-11 | 2019-08-13 | Macronix International Co., Ltd. | 3D memory with staged-level multibit programming |
US9959932B1 (en) | 2017-02-21 | 2018-05-01 | Sandisk Technologies Llc | Grouping memory cells into sub-blocks for program speed uniformity |
CN107015832A (zh) * | 2017-04-13 | 2017-08-04 | 四川长虹电器股份有限公司 | 压缩机参数配置的方法 |
US10134479B2 (en) | 2017-04-21 | 2018-11-20 | Sandisk Technologies Llc | Non-volatile memory with reduced program speed variation |
US10649735B2 (en) * | 2017-09-12 | 2020-05-12 | Ememory Technology Inc. | Security system with entropy bits |
TWI638358B (zh) * | 2017-10-25 | 2018-10-11 | 旺宏電子股份有限公司 | 記憶體裝置及其操作方法 |
TWI648739B (zh) | 2018-03-20 | 2019-01-21 | 大陸商深圳大心電子科技有限公司 | 記憶體管理方法與儲存控制器 |
US10522226B2 (en) * | 2018-05-01 | 2019-12-31 | Silicon Storage Technology, Inc. | Method and apparatus for high voltage generation for analog neural memory in deep learning artificial neural network |
US10825513B2 (en) * | 2018-06-26 | 2020-11-03 | Sandisk Technologies Llc | Parasitic noise control during sense operations |
US10838652B2 (en) | 2018-08-24 | 2020-11-17 | Silicon Storage Technology, Inc. | Programming of memory cell having gate capacitively coupled to floating gate |
JP2020047329A (ja) * | 2018-09-18 | 2020-03-26 | キオクシア株式会社 | 半導体記憶装置 |
US11061762B2 (en) * | 2019-02-04 | 2021-07-13 | Intel Corporation | Memory programming techniques |
US10706941B1 (en) * | 2019-04-01 | 2020-07-07 | Sandisk Technologies Llc | Multi-state programming in memory device with loop-dependent bit line voltage during verify |
US10910076B2 (en) | 2019-05-16 | 2021-02-02 | Sandisk Technologies Llc | Memory cell mis-shape mitigation |
US10991433B2 (en) | 2019-09-03 | 2021-04-27 | Silicon Storage Technology, Inc. | Method of improving read current stability in analog non-volatile memory by limiting time gap between erase and program |
US11361829B2 (en) * | 2020-01-29 | 2022-06-14 | Sandisk Technologies Llc | In-storage logic for hardware accelerators |
US11309042B2 (en) | 2020-06-29 | 2022-04-19 | Silicon Storage Technology, Inc. | Method of improving read current stability in analog non-volatile memory by program adjustment for memory cells exhibiting random telegraph noise |
US11626160B2 (en) | 2021-02-03 | 2023-04-11 | Sandisk Technologies Llc | Dynamic sense node voltage to compensate for variances when sensing threshold voltages of memory cells |
US11688474B2 (en) * | 2021-04-19 | 2023-06-27 | Micron Technology, Inc. | Dual verify for quick charge loss reduction in memory cells |
US11594292B2 (en) * | 2021-04-23 | 2023-02-28 | Micron Technology, Inc. | Power loss immunity in memory programming operations |
US11556416B2 (en) | 2021-05-05 | 2023-01-17 | Apple Inc. | Controlling memory readout reliability and throughput by adjusting distance between read thresholds |
US11769558B2 (en) | 2021-06-08 | 2023-09-26 | Silicon Storage Technology, Inc. | Method of reducing random telegraph noise in non-volatile memory by grouping and screening memory cells |
US11847342B2 (en) | 2021-07-28 | 2023-12-19 | Apple Inc. | Efficient transfer of hard data and confidence levels in reading a nonvolatile memory |
US11587621B1 (en) * | 2021-08-05 | 2023-02-21 | Western Digital Technologies, Inc. | Foggy-fine programming for memory cells with reduced number of program pulses |
US11972111B2 (en) * | 2021-11-09 | 2024-04-30 | Samsung Electronics Co., Ltd. | Memory device for improving speed of program operation and operating method thereof |
US20230245706A1 (en) * | 2022-01-31 | 2023-08-03 | Sandisk Technologies Llc | Non-volatile memory with zone based program speed adjustment |
Family Cites Families (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3365624A (en) * | 1966-08-10 | 1968-01-23 | Automatic Valve Corp | Valve control system |
US3832123A (en) * | 1972-11-15 | 1974-08-27 | Kidde & Co Walter | Burner control system |
US3906294A (en) * | 1973-07-02 | 1975-09-16 | Webster Electric Co Inc | Time delayed solenoid valve |
US4325689A (en) * | 1980-03-28 | 1982-04-20 | Harold A. Teschendorf | Automatic reset control for direct spark ignition systems |
JPS5866718A (ja) * | 1981-10-16 | 1983-04-21 | Toyotomi Kogyo Co Ltd | 停電安全装置付石油燃焼器 |
US4627027A (en) | 1982-09-01 | 1986-12-02 | Sanyo Electric Co., Ltd. | Analog storing and reproducing apparatus utilizing non-volatile memory elements |
US5218569A (en) * | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
GB2283345B (en) * | 1993-05-11 | 1997-11-12 | Nippon Kokan Kk | Non-volatile memory device and method for adjusting the threshold value thereof |
JPH0778484A (ja) * | 1993-07-13 | 1995-03-20 | Nkk Corp | 記憶素子、不揮発性メモリ、不揮発性記憶装置及びそれを用いた情報記憶方法 |
JP3730272B2 (ja) | 1994-09-17 | 2005-12-21 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5550772A (en) * | 1995-02-13 | 1996-08-27 | National Semiconductor Corporation | Memory array utilizing multi-state memory cells |
JP3414587B2 (ja) * | 1996-06-06 | 2003-06-09 | 株式会社東芝 | 不揮発性半導体記憶装置 |
WO1998028745A1 (en) | 1996-12-20 | 1998-07-02 | Intel Corporation | Nonvolatile writeable memory with fast programming capability |
JP3890647B2 (ja) * | 1997-01-31 | 2007-03-07 | ソニー株式会社 | 不揮発性半導体記憶装置 |
JP3159105B2 (ja) | 1997-02-21 | 2001-04-23 | 日本電気株式会社 | 不揮発性半導体記憶装置及びその書込方法 |
JP3481817B2 (ja) | 1997-04-07 | 2003-12-22 | 株式会社東芝 | 半導体記憶装置 |
JP3486079B2 (ja) * | 1997-09-18 | 2004-01-13 | 株式会社東芝 | 半導体記憶装置 |
US5912836A (en) * | 1997-12-01 | 1999-06-15 | Amic Technology, Inc. | Circuit for detecting both charge gain and charge loss properties in a non-volatile memory array |
JPH11328981A (ja) * | 1998-05-12 | 1999-11-30 | Matsushita Electric Ind Co Ltd | 半導体記憶装置,およびレギュレータ |
JP3110397B2 (ja) * | 1998-09-30 | 2000-11-20 | 日本電気アイシーマイコンシステム株式会社 | 不揮発性半導体記憶装置の書き込み方法および記録媒体 |
JP3410036B2 (ja) * | 1999-02-03 | 2003-05-26 | シャープ株式会社 | 不揮発性半導体記憶装置への情報の書き込み方法 |
US6301161B1 (en) | 2000-04-25 | 2001-10-09 | Winbond Electronics Corporation | Programming flash memory analog storage using coarse-and-fine sequence |
US6490204B2 (en) | 2000-05-04 | 2002-12-03 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
US6292394B1 (en) * | 2000-06-29 | 2001-09-18 | Saifun Semiconductors Ltd. | Method for programming of a semiconductor memory cell |
US6301151B1 (en) | 2000-08-09 | 2001-10-09 | Information Storage Devices, Inc. | Adaptive programming method and apparatus for flash memory analog storage |
JP3631463B2 (ja) | 2001-12-27 | 2005-03-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6424566B1 (en) | 2001-02-08 | 2002-07-23 | Advanced Micro Devices, Inc. | Program reconnaissance to eliminate variations in vt distributions of multi-level cell flash memory designs |
US6552929B1 (en) * | 2001-02-08 | 2003-04-22 | Advanced Micro Devices, Inc. | Piggyback programming using an extended first pulse for multi-level cell flash memory designs |
US6738289B2 (en) | 2001-02-26 | 2004-05-18 | Sandisk Corporation | Non-volatile memory with improved programming and method therefor |
US6584017B2 (en) * | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
DE60139670D1 (de) * | 2001-04-10 | 2009-10-08 | St Microelectronics Srl | Verfahren zur Programmierung nichtflüchtiger Speicherzellen mit Programmier- und Prüfalgorithmus unter Verwendung treppenförmiger Spannungsimpulse mit variablem Stufenabstand |
US6522580B2 (en) | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
US6924663B2 (en) * | 2001-12-28 | 2005-08-02 | Fujitsu Limited | Programmable logic device with ferroelectric configuration memories |
US6529412B1 (en) | 2002-01-16 | 2003-03-04 | Advanced Micro Devices, Inc. | Source side sensing scheme for virtual ground read of flash eprom array with adjacent bit precharge |
US6771536B2 (en) | 2002-02-27 | 2004-08-03 | Sandisk Corporation | Operating techniques for reducing program and read disturbs of a non-volatile memory |
US6735114B1 (en) * | 2003-02-04 | 2004-05-11 | Advanced Micro Devices, Inc. | Method of improving dynamic reference tracking for flash memory unit |
US6856551B2 (en) * | 2003-02-06 | 2005-02-15 | Sandisk Corporation | System and method for programming cells in non-volatile integrated memory devices |
US7177199B2 (en) | 2003-10-20 | 2007-02-13 | Sandisk Corporation | Behavior based programming of non-volatile memory |
-
2003
- 2003-10-20 US US10/689,333 patent/US7177199B2/en not_active Expired - Lifetime
-
2004
- 2004-03-17 JP JP2004076471A patent/JP4646534B2/ja not_active Expired - Lifetime
- 2004-10-12 EP EP04795181A patent/EP1678722B1/en active Active
- 2004-10-12 KR KR1020127009782A patent/KR101323843B1/ko active IP Right Grant
- 2004-10-12 KR KR1020067007560A patent/KR101161429B1/ko active IP Right Grant
- 2004-10-12 DE DE602004031139T patent/DE602004031139D1/de active Active
- 2004-10-12 CN CN2004800307349A patent/CN1879175B/zh active Active
- 2004-10-12 WO PCT/US2004/033984 patent/WO2005043548A1/en active Application Filing
- 2004-10-12 AT AT04795181T patent/ATE496373T1/de not_active IP Right Cessation
- 2004-10-20 TW TW093131854A patent/TWI262506B/zh not_active IP Right Cessation
-
2007
- 2007-01-17 US US11/624,052 patent/US7633807B2/en not_active Expired - Lifetime
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8462558B2 (en) | 2007-05-25 | 2013-06-11 | Samsung Electronics Co., Ltd. | Program and erase methods for nonvolatile memory |
CN101404182B (zh) * | 2007-05-25 | 2014-05-07 | 三星电子株式会社 | 用于非易失性存储器的编程及擦除方法 |
CN101414483B (zh) * | 2007-08-20 | 2014-05-07 | 三星电子株式会社 | 用于非易失性存储器的编程和擦除方法 |
CN101430933A (zh) * | 2007-10-23 | 2009-05-13 | 三星电子株式会社 | 多比特快闪存储器件及其编程和读取方法 |
CN101430933B (zh) * | 2007-10-23 | 2013-07-10 | 三星电子株式会社 | 多比特快闪存储器件及其编程和读取方法 |
CN102138181B (zh) * | 2008-06-27 | 2014-09-10 | 桑迪士克科技股份有限公司 | 非易失性存储器以及其操作方法 |
CN102138181A (zh) * | 2008-06-27 | 2011-07-27 | 桑迪士克公司 | 用最小的额外时间损失来减少干扰的改进编程算法 |
CN103081015A (zh) * | 2010-07-19 | 2013-05-01 | 桑迪士克技术有限公司 | 利用位线电压逐步增加来对非易失性存储器进行编程 |
CN103081015B (zh) * | 2010-07-19 | 2016-01-20 | 桑迪士克技术有限公司 | 利用位线电压逐步增加来对非易失性存储器进行编程 |
CN103069494B (zh) * | 2010-08-03 | 2016-01-20 | 桑迪士克技术有限公司 | 非易失性存储器中的自然阈值电压分布压缩 |
CN103069494A (zh) * | 2010-08-03 | 2013-04-24 | 桑迪士克技术有限公司 | 非易失性存储器中的自然阈值电压分布压缩 |
CN109378026A (zh) * | 2012-06-13 | 2019-02-22 | 爱思开海力士有限公司 | 半导体存储器件及其操作方法 |
CN103971737A (zh) * | 2013-01-31 | 2014-08-06 | 力旺电子股份有限公司 | 闪存及其相关程划方法 |
CN103971737B (zh) * | 2013-01-31 | 2017-05-24 | 力旺电子股份有限公司 | 闪存及其相关编程方法 |
CN109256162B (zh) * | 2013-09-10 | 2023-03-17 | 爱思开海力士有限公司 | 半导体存储器件及其编程方法 |
CN104424994A (zh) * | 2013-09-10 | 2015-03-18 | 爱思开海力士有限公司 | 半导体存储器件及其编程方法 |
CN104424994B (zh) * | 2013-09-10 | 2018-09-07 | 爱思开海力士有限公司 | 半导体存储器件及其编程方法 |
CN109256162A (zh) * | 2013-09-10 | 2019-01-22 | 爱思开海力士有限公司 | 半导体存储器件及其编程方法 |
CN106067323A (zh) * | 2015-04-22 | 2016-11-02 | 桑迪士克科技有限责任公司 | 非易失性存储器的利用双脉冲编程的自然阈值电压压缩 |
WO2020150935A1 (en) * | 2019-01-23 | 2020-07-30 | Yangtze Memory Technologies Co., Ltd. | Method for programming memory system |
US10943650B2 (en) | 2019-01-23 | 2021-03-09 | Yangtze Memory Technologies Co., Ltd. | Method for programming memory system |
US11145362B2 (en) | 2019-01-23 | 2021-10-12 | Yangtze Memory Technologies Co., Ltd. | Method for programming memory system |
JP2022508285A (ja) * | 2019-01-23 | 2022-01-19 | 長江存儲科技有限責任公司 | メモリシステムをプログラミングするための方法。 |
CN109863557A (zh) * | 2019-01-23 | 2019-06-07 | 长江存储科技有限责任公司 | 用于对存储器系统进行编程的方法 |
Also Published As
Publication number | Publication date |
---|---|
EP1678722A1 (en) | 2006-07-12 |
US20070121383A1 (en) | 2007-05-31 |
EP1678722B1 (en) | 2011-01-19 |
TW200532694A (en) | 2005-10-01 |
US7633807B2 (en) | 2009-12-15 |
CN1879175B (zh) | 2010-04-14 |
US7177199B2 (en) | 2007-02-13 |
KR101161429B1 (ko) | 2012-07-02 |
US20050083735A1 (en) | 2005-04-21 |
WO2005043548A1 (en) | 2005-05-12 |
TWI262506B (en) | 2006-09-21 |
JP4646534B2 (ja) | 2011-03-09 |
KR20060115996A (ko) | 2006-11-13 |
JP2005129194A (ja) | 2005-05-19 |
KR101323843B1 (ko) | 2013-10-31 |
KR20120055733A (ko) | 2012-05-31 |
DE602004031139D1 (de) | 2011-03-03 |
ATE496373T1 (de) | 2011-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1879175B (zh) | 基于非易失性存储器单元的行为的编程方法 | |
CN101356587B (zh) | 用于对具有减少的编程干扰的nand类型的非易失性存储器进行编程的以末为先模式 | |
CN1926637B (zh) | 非易失性存储器及其编程方法 | |
CN1853239B (zh) | 检测过度编程的存储器 | |
KR100868570B1 (ko) | 비휘발성 메모리의 동시 프로그래밍 | |
US7483311B2 (en) | Erase operation in a flash memory device | |
US7385846B2 (en) | Reduction of adjacent floating gate data pattern sensitivity | |
US9390800B2 (en) | Semiconductor memory and semiconductor memory control method | |
TWI424439B (zh) | 非揮發性記憶體裝置中感測記憶體讀取及程式檢驗操作 | |
US8064267B2 (en) | Erase voltage reduction in a non-volatile memory device | |
KR20080025052A (ko) | 비휘발성 메모리에서 프로그램 금지 방안들의 선택적인적용 | |
CN102598142A (zh) | 存储器装置中的数据线管理 | |
KR101016432B1 (ko) | 타이밍 정보를 이용한 리버스 커플링 효과 | |
US8456907B2 (en) | Semiconductor memory device and method of operating the same | |
KR20080089335A (ko) | 스마트 검증을 이용한 다중 상태 비휘발성 메모리프로그래밍 방법 | |
US8139421B2 (en) | Erase degradation reduction in non-volatile memory | |
US11923015B2 (en) | Semiconductor storage device and data erasing method | |
US11694753B2 (en) | Memory cell sensing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: California, USA Co-patentee after: Toshiba Corp. Patentee after: Sandisk Co.,Ltd. Address before: California, USA Co-patentee before: Toshiba Corp. Patentee before: Sandisk Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191029 Address after: California, USA Co-patentee after: TOSHIBA MEMORY Corp. Patentee after: Western Digital Technologies, Inc. Address before: California, USA Co-patentee before: TOSHIBA MEMORY Corp. Patentee before: Sandisk Co.,Ltd. Effective date of registration: 20191029 Address after: California, USA Co-patentee after: TOSHIBA MEMORY Corp. Patentee after: Sandisk Co.,Ltd. Address before: California, USA Co-patentee before: Toshiba Corp. Patentee before: Sandisk Co.,Ltd. |
|
TR01 | Transfer of patent right |