DE602004031139D1 - Programmierungsverfahren auf der basis des verhaltens nichtflüchtiger speicherzellen - Google Patents

Programmierungsverfahren auf der basis des verhaltens nichtflüchtiger speicherzellen

Info

Publication number
DE602004031139D1
DE602004031139D1 DE602004031139T DE602004031139T DE602004031139D1 DE 602004031139 D1 DE602004031139 D1 DE 602004031139D1 DE 602004031139 T DE602004031139 T DE 602004031139T DE 602004031139 T DE602004031139 T DE 602004031139T DE 602004031139 D1 DE602004031139 D1 DE 602004031139D1
Authority
DE
Germany
Prior art keywords
memory cells
behavior
program
volatile memory
procedure based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004031139T
Other languages
English (en)
Inventor
Jian Chen
Jeffrey W Lutze
Yan Li
Daniel C Guterman
Tanaka Tomoharu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
SanDisk Corp
Original Assignee
Toshiba Corp
SanDisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, SanDisk Corp filed Critical Toshiba Corp
Publication of DE602004031139D1 publication Critical patent/DE602004031139D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
DE602004031139T 2003-10-20 2004-10-12 Programmierungsverfahren auf der basis des verhaltens nichtflüchtiger speicherzellen Active DE602004031139D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/689,333 US7177199B2 (en) 2003-10-20 2003-10-20 Behavior based programming of non-volatile memory
PCT/US2004/033984 WO2005043548A1 (en) 2003-10-20 2004-10-12 Programming method based on the behaviour of non-volatile memory cenlls

Publications (1)

Publication Number Publication Date
DE602004031139D1 true DE602004031139D1 (de) 2011-03-03

Family

ID=34521390

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004031139T Active DE602004031139D1 (de) 2003-10-20 2004-10-12 Programmierungsverfahren auf der basis des verhaltens nichtflüchtiger speicherzellen

Country Status (9)

Country Link
US (2) US7177199B2 (de)
EP (1) EP1678722B1 (de)
JP (1) JP4646534B2 (de)
KR (2) KR101161429B1 (de)
CN (1) CN1879175B (de)
AT (1) ATE496373T1 (de)
DE (1) DE602004031139D1 (de)
TW (1) TWI262506B (de)
WO (1) WO2005043548A1 (de)

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EP1678722B1 (de) 2011-01-19
TWI262506B (en) 2006-09-21
KR101161429B1 (ko) 2012-07-02
EP1678722A1 (de) 2006-07-12
KR101323843B1 (ko) 2013-10-31
CN1879175A (zh) 2006-12-13
CN1879175B (zh) 2010-04-14
TW200532694A (en) 2005-10-01
US7177199B2 (en) 2007-02-13
KR20120055733A (ko) 2012-05-31
KR20060115996A (ko) 2006-11-13
JP4646534B2 (ja) 2011-03-09
ATE496373T1 (de) 2011-02-15
US7633807B2 (en) 2009-12-15
US20070121383A1 (en) 2007-05-31
US20050083735A1 (en) 2005-04-21
WO2005043548A1 (en) 2005-05-12
JP2005129194A (ja) 2005-05-19

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